Patent application number | Description | Published |
20080297947 | Magnetic Disk for Hard Disk Drives - The present invention provides a magnetic disk in a discrete track medium and a patterned medium, which prevents the loss of the magnetically recorded data when a head of a magnetic disk device contacts the magnetic disk, and a manufacturing method thereof. A magnetic disk has a protrusion as a non-magnetic member formed on a disk surface to prevent a head from being in contact with a recording section. When the protrusion formed in a disk substrate collides against the head, the protrusion | 12-04-2008 |
20090108420 | SEMICONDUCTOR DEVICE AND ITS FABRICATION PROCESS - A technique capable of preventing whiskers which are generated in a plating film formed on the surface of each of leads of a semiconductor device is provided. Particularly, a technique capable of preventing generation of whiskers in a plating film containing tin as a primary material and not containing lead is provided. The plating film formed on the surface of the lead is formed so that a particular plane orientation among plane orientations of tin constituting the plating film is parallel to the surface of the lead. Specifically, the plating film is formed so that the (001) plane of tin is parallel to the surface of the lead. Thus, the coefficient of thermal expansion of tin constituting the plating film can be made to be lower than a coefficient of thermal expansion of the copper constituting the lead. | 04-30-2009 |
20090154029 | MAGNETIC HEAD AND MAGNETIC RECORDING SYSTEM - A magnetic reproduction head includes a lower magnetic shield layer, an upper magnetic shield layer, a magnetoresistive film formed between the lower and the upper magnetic shield layers, a refill film in an element height direction disposed in contact with a surface opposite a floating surface of the magnetoresistive film, and a refill film in a track width direction disposed on a side wall surface of the magnetoresistive film. The magnetoresistive film is a tunneling magnetoresistive film including a free layer, an insulating barrier layer, and a fixed layer. The insulating barrier layer is one of a magnesium oxide film, an aluminum oxide film, and a titanium oxide film which contains at least one of nitrogen and silicon. | 06-18-2009 |
20090316292 | MAGNETORESISTIVE HEADS AND MAGNETIC RECORDING DEVICE - A magnetoresistive head is provided with high reliability and produced at a high yield rate. The magnetoresistive head includes a lower magnetic shield layer, an upper magnetic shield layer, a magnetoresistive effect film, and means for causing a current to flow in the direction of the thickness of the magnetoresistive effect film. The magnetoresistive effect film is provided between the lower magnetic shield layer and the upper magnetic shield layer. The magnetoresistive effect film is composed of a fixed layer, a non-magnetic layer, an insulating barrier layer and a free layer. The four layers of the magnetoresistive effect film are formed in this order. The insulating barrier layer is an oxide layer containing at least one of titanium and nickel. | 12-24-2009 |
20100044672 | SEMICONDUCTOR MEMORY - Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer. | 02-25-2010 |
20100052139 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR SEALING RESIN - There is provided a semiconductor device which has been improved in adhesion between leads and a sealing resin (molding resin), and thus does not undergo peeling therebetween, and has high reliability. | 03-04-2010 |
20100102680 | PIEZOELECTRIC ELEMENT - A piezoelectric element that is high in piezoelectric performance and large in displacement and is reliable is provided. The piezoelectric element includes a piezoelectric material containing BaTi | 04-29-2010 |
20110049689 | SEMICONDUCTOR DEVICE WITH ACENE HEAT SPREADER - A semiconductor device in which an adhesion between a lead and a sealing body (mold sealing body) is improved to prevent the peering is provided. In a semiconductor device having a semiconductor chip, a plurality of leads electrically connected to the semiconductor chip and mainly made of metal and a sealing body for sealing the semiconductor chip, in order to improve the adhesion between the lead and the sealing body (mold sealing body), a material combination with good lattice matching is used as a combination of a surface material of the lead and a material of the sealing body, and the sealing body mainly made of acene is used. | 03-03-2011 |
20110215288 | SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF - Since a chalcogenide material has low adhesion to a silicon oxide film, there is a problem in that it tends to separate from the film during the manufacturing step of a phase change memory. In addition, since the chalcogenide material has to be heated to its melting point or higher during resetting (amorphization) of the phase change memory, there is a problem of requiring extremely large rewriting current. An interfacial layer includes an extremely thin insulator or semiconductor having the function as both an adhesive layer and a high resistance layer (thermal resistance layer) is inserted between chalcogenide material layer/interlayer insulative film and between chalcogenide material layer/plug. | 09-08-2011 |
20110293965 | LUBRICANT AND MAGNETIC DISK DEVICE USING SAME - In a lubricant including a structure of a polymer compound, the structure includes polar groups or side chains having polarity at terminal ends and in at least one intermediate portion of a main chain, and also includes non-polar side chains at the terminal ends or in the intermediate portions of the main chain. For example, any of —OH, —CH | 12-01-2011 |
20110316661 | UNSATURATED POLYESTER RESIN COMPOSITION FOR COIL ADHESION - It is an objective of the present invention to provide a highly adhesive unsaturated polyester resin composition for fixing or immobilizing coils. There is provided an unsaturated polyester resin composition for adhesion of a coil, which includes the ingredients of: A) an unsaturated polyester resin and/or a vinyl ester resin; B) a monomer including a vinyl group as a polymerizable substituent at at least one end thereof; C) an isocyanate; and D) a polymerization initiator. | 12-29-2011 |
20120015514 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed. | 01-19-2012 |
20120074377 | SEMICONDUCTOR MEMORY - Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer. | 03-29-2012 |
20120077325 | SEMICONDUCTOR MEMORY - Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer. | 03-29-2012 |
20120241715 | SEMICONDUCTOR MEMORY - Manufacturing processes for phase change memory have suffered from the problem of chalcogenide material being susceptible to delamination, since this material exhibits low adhesion to high melting point metals and silicon oxide films. Furthermore, chalcogenide material has low thermal stability and hence tends to sublime during the manufacturing process of phase change memory. According to the present invention, conductive or insulative adhesive layers are formed over and under the chalcogenide material layer to enhance its delamination strength. Further, a protective film made up of a nitride film is formed on the sidewalls of the chalcogenide material layer to prevent sublimation of the chalcogenide material layer. | 09-27-2012 |
20130224592 | Lithium Ion Battery And Method For Producing The Same - Provided is a lithium ion battery having a long service life by improving an adhesion strength between a binder resin and a metal foil. A binder resin, which is a compound having a chemical structure that contains a polyvinylidene fluoride molecular chain, a six-membered ring such as a cyclohexane ring, and an end group selected from the group consisting of SiX | 08-29-2013 |
20140091468 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed. | 04-03-2014 |
20140312499 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed. | 10-23-2014 |