Patent application number | Description | Published |
20080251854 | SEMICONDUCTOR DEVICE - In one aspect of the present invention, semiconductor device, may include a p-channel semiconductor active region, an n-channel semiconductor active region, an element isolation insulating layer which electrically isolates the p-channel semiconductor active region from the n-channel semiconductor active region, and an insulating layer made of a material different from that of the element isolation insulating layer, and being in contact with both ends, in its channel length direction, of the p-channel semiconductor active region to apply a compression stress in the channel length direction to a channel of the p-channel semiconductor active region, wherein the p-channel semiconductor active region is surrounded by the insulating layer, which is in contact with the both ends, in the channel length direction, of the p-channel semiconductor active region, and the p-channel semiconductor active region is surrounded by the element isolation insulating layer, which is in contact with the side surfaces, approximately parallel to the channel length direction, of the p-channel semiconductor active region, and the n-channel semiconductor active region is surrounded by the element isolation insulating layer. | 10-16-2008 |
20080296775 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In one aspect of the present invention, a semiconductor device may include a semiconductor substrate having a semiconductor element on an upper surface, a first dielectric film provided on the semiconductor substrate, a second dielectric film provided on the first dielectric film, a metal ring provided in the first dielectric film and the second dielectric film and configured to form a closed loop in a plan view, a first region surrounded by the metal ring in a plan view, a second region provided outside of the metal ring in a plan view, a plurality of via contacts provided in the first dielectric film in the first and second region, a plurality of wirings provided in the second dielectric film in the first and second region, and an air gap provided in the second dielectric film in the first region. | 12-04-2008 |
20080311742 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - In one aspect of the present invention, a method of fabricating a semiconductor device may include forming a sacrificial film on a substrate, forming an insulating film on the sacrificial film, forming a plurality of first openings in the sacrificial film and the insulating film in a first region and a second region, depositing a conductive material in the plurality of the first openings, forming a second opening in the insulating film in the second region so as to expose the sacrificial film, and removing the sacrificial film in the first region via the second opening in the second region. | 12-18-2008 |
20090107692 | MICRO-ELECTRO-MECHANICAL-SYSTEM PACKAGE AND METHOD FOR MANUFACTURING THE SAME - According to an aspect of the present invention, there is provided a method for manufacturing a MEMS package, the method including: forming a MEMS device on a substrate; forming a sacrificing member on the MEMS device; forming a cavity formation film on the sacrificing member; forming a through hole in the cavity formation film at a portion other than above the MEMS device; removing the sacrificing member through the through hole, thereby forming a cavity around the MEMS device; and forming a seal layer on the cavity formation film to block the through hole and to seal the cavity, by performing a film forming process in which a seal layer material is straightly applied in a direction of perpendicular to a surface of the substrate. | 04-30-2009 |
20100308423 | MEMS DEVICE AND MANUFACTURING METHOD THEREOF - A MEMS device includes: a movable element supported by a supporting member on a substrate; an encapsulation structure provided above the substrate so as to encapsulate the movable element; and a fin that is made of an insulation film, provided above the substrate, and provided inside of the encapsulation structure and outside of the movable element, and a part of the fin being positioned between a height from the substrate when the movable element are turned ON and a height from the substrate when the movable element are turned OFF. | 12-09-2010 |
20110095382 | MEMS DEVICE - A MEMS device of an embodiment includes: a MEMS element; a first cavity region provided on the MEMS element; a second cavity region provided on a surrounding portion outside the MEMS element, the second cavity region having a lower height than the first cavity region; a third cavity region provided on a surrounding portion outside the second cavity region, the third cavity region having a lower height than the second cavity region; an insulating film provided to cover upper portions and side surfaces of the first to the third cavity regions; an opening provided in the insulating film on the first to the third cavity regions; and a sealant provided on the insulating film to seal the opening and to retain the first to the third cavity regions. | 04-28-2011 |
20110241135 | MEMS ELEMENT - According to an embodiment of the present invention, a MEMS element includes: a semiconductor substrate; an island insulating layer formed on the substrate, the insulating layer including an air gap layer having an air gap group, the air gap group including a plurality of air gaps disposed in an in-plane direction; and a MEMS capacitor formed above the air gap group on the insulating layer. | 10-06-2011 |
20110291167 | SEMICONDUCTOR DEVICE - In one embodiment, a semiconductor device includes a substrate having a through hole, and a MEMS capacitor provided above the substrate. The device further includes an integrated circuit configured to control the MEMS capacitor, the circuit including transistors on the substrate and being provided under the MEMS capacitor and on the substrate. Further, an area on the substrate immediately under the MEMS capacitor overlaps at least partially with the through hole. | 12-01-2011 |
Patent application number | Description | Published |
20090188709 | ELECTRICAL DEVICE - A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film. | 07-30-2009 |
20130032386 | ELECTRICAL DEVICE INCLUDING A FUNCTIONAL ELEMENT IN A CAVITY - A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film. | 02-07-2013 |
20140353777 | ELECTRICAL DEVICE INCLUDING A FUNCTIONAL ELEMENT IN A CAVITY - A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film. | 12-04-2014 |
Patent application number | Description | Published |
20130182366 | MEMS DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a MEMS element comprises a first electrode fixed on a substrate, a second electrode formed above the first electrode to face it, and vertically movable, a first anchor portion formed on the substrate and configured to support the second electrode, and a first spring portion configured to connect the second electrode and the first anchor portion. The first spring portion includes a liner layer includes a brittle material in contact with the second electrode and the first anchor portion, and a base layer formed on the liner layer, includes a brittle material having a composition different from that of the liner layer, and having a film thickness larger than that of the liner layer. | 07-18-2013 |
20140284729 | ELECTRICAL COMPONENT AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, an electrical component comprises a substrate, a functional element formed on the substrate, a first layer which includes through holes, and forms a cavity that stores the functional element on the substrate, and a second layer which is formed on the first layer, and closes the through holes. The first layer includes a first film, a second film on the first film, and a third film on the second film. A Young's modulus of the second film is higher than a Young's modulus of the first film and the third film. | 09-25-2014 |
20140291136 | MEMS DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a MEMS device includes a first electrode formed on a support substrate, a second electrode arranged to face the first electrode and formed to be movable in a facing direction with respect to the first electrode, a beam portion formed on the support substrate and formed to support the second electrode, a cap layer formed to cover the second electrode and beam portion, a plurality of through-holes formed in the cap layer, the through-holes being formed in a portion other than a proximity portion in which a facing distance between the cap layer and a member in the cap layer is not longer than a preset distance, and a sealing layer formed to cover the cap layer and fill the through-holes. | 10-02-2014 |
20150259192 | MEMS DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a MEMS device is disclosed. The device includes a substrate, a MEMS element as a first component provided on the substrate, a first film having a plurality of through holes. The first film and the substrate are configured to form a cavity accommodating the MEMS element. The device further includes a second film provided on the first film, a second component provided on the substrate and disposed outside of the cavity, and a film provided on the substrate and disposed outside of the cavity, and configured to surround the second component. | 09-17-2015 |