Patent application number | Description | Published |
20080296742 | SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING THEREOF - A semiconductor device having silicon-oxide-nitride-oxide-silicon (SONOS) structure that overcomes spatial limitations which trap charges by not utilizing a flat, planar structure of the ONO film including a charging trap layer, thereby making it possible to improve reliability for data preserving characteristic of a SONOS device. | 12-04-2008 |
20080296743 | Semiconductor device and method for fabricating the same - The present invention relates to a semiconductor device, and a method for fabricating a semiconductor device, which involves an oxide-nitride-oxide stack in a silicon-oxide-nitride-oxide-silicon device. Barrier characteristics of an upper blocking dielectric layer and/or a lower tunneling dielectric layer on upper and lower sides of a charge trapping dielectric layer are improved, so as to maintain holding characteristics of charges trapped in the charge trapping dielectric layer, making it possible to improve reliability of a semiconductor device containing the same. | 12-04-2008 |
20090033592 | PLASMA DISPLAY DEVICE AND DRIVING METHOD THEREOF - A plasma display device including a scan circuit, a plasma display panel, and a plurality of power sources for driving the plasma display panel. The scan circuit is configured to apply scan voltages to scan electrodes of the plasma display panel in order to select light-emitting cells and non-light-emitting cells during an address period. The scan circuit includes a capacitor configured to remove the need to provide a current cut-off switch to prevent undesirable current flowing between the power supplies during the operation of the plasma display. | 02-05-2009 |
20090039422 | RECESS GATE OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A method for fabricating a semiconductor device, and more particularly, a method for forming a recess gate is disclosed. The method for forming a recess gate includes forming a first nitride layer over a semiconductor substrate, forming a first nitride layer pattern by selectively etching the first nitride layer to expose a portion of the substrate, forming a spacer over a sidewall of the first nitride layer pattern, forming a recess for a gate channel region by etching the substrate using the first nitride layer pattern and the spacer as an etching mask, forming a gate oxide layer over a sidewall and a bottom surface of the recess, forming a gate poly-silicon layer pattern to bury the recess and a space defined by the spacer, and removing the first nitride layer pattern. | 02-12-2009 |
20090130820 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes forming a shallow trench isolation trench in a semiconductor substrate, and then forming a first oxide layer over the semiconductor substrate including the trench by exposing the semiconductor substrate including the shallow trench isolation trench to oxygen, and then implanting boron ions on the surface of the trench by performing an ion implantation on the STI trench process using BF | 05-21-2009 |
20090140379 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a device isolation region formed on a part of shallow trench isolation (STI) sidewalls to relieve stress applied to an active region, thereby improving current flowing toward a channel region. | 06-04-2009 |
20090160001 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SENSOR - An image sensor and a method for manufacturing the same are disclosed. The image sensor manufacturing method may include forming a hard mask pattern over a semiconductor substrate to cover a photodiode region; forming convex photodiodes by wet-etching the photodiode region in the semiconductor substrate using the hard mask pattern; removing the hard mask pattern; forming an interlayer insulating film over the photodiode; forming color filter layers aligned with the photodiodes over the interlayer insulating film; and forming microlenses over the color filter layers. The resulting image sensor can transduce a greater quantity of light as compared to the related art, owing to an increased unit surface area, resulting in enhanced optical efficiency characteristics. | 06-25-2009 |
20090162985 | Method of Fabricating Semiconductor Device - Methods of fabricating a semiconductor device are provided. An insulating layer can be formed on a semiconductor substrate, a sacrificial layer can be formed on the insulating layer, and a trench can be formed in the sacrificial layer. A first gate material layer can be formed on the sacrificial layer and in the trench, and a second gate material layer can be formed on the first gate material layer. A gate electrode can be formed by reacting the first gate material layer and the second gate material layer. | 06-25-2009 |
20100165594 | Mounting structure of semiconductor package and plasma display device having the same - A mounting structure of a semiconductor package includes a semiconductor package, a chassis having a coupling boss protruding at a position corresponding to the coupling hole, a coupling member penetrating the coupling hole and coupled to the coupling boss, and an insulation member covering around the coupling hole of the reinforcing plate and making insulation contact with the coupling member and the coupling boss. The semiconductor package includes a film substrate for interfacing transmission of signals between a circuit board and a display panel, a semiconductor chip forming an electrical contact point with the film substrate, and a reinforcing plate to which the film substrate and the semiconductor chip are directly attached. The reinforcing plate has a coupling hole. | 07-01-2010 |
20100165595 | Semiconductor package and plasma display device including the same - Provided are a semiconductor package and a plasma display device including the same. The semiconductor package includes a film substrate that relays a signal between a circuit board and a display panel; a semiconductor chip that is electrically connected to the film substrate; a reinforcement plate to which the film substrate and the semiconductor chip are connected to via adhesive layers, and that provides a floating ground; and a connecting member that electrically connects the reinforcement plate and a ground of the semiconductor chip, and the electrically connects the reinforcement plate and a ground of the film substrate. Accordingly, the semiconductor package has excellent heat dissipation performance and ground stability. | 07-01-2010 |