Patent application number | Description | Published |
20100166945 | Methods of calculating thicknesses of layers and methods of forming layers using the same - A method of calculating a thickness of a layer may include forming the layer on a substrate in a chamber, measuring optical emission spectrum data from the chamber, and calculating the thickness of the layer from the optical emission spectrum data. A method of forming a layer may include depositing the layer on a substrate in a chamber, measuring optical emission spectrum data from the chamber, calculating a thickness of the layer using the optical emission spectrum data, and ending the depositing of the layer when the calculated thickness of the layer is within a target thickness range. | 07-01-2010 |
20110140719 | METHOD OF MONITORING SEMICONDUCTOR PROCESS - A method of monitoring a semiconductor process is provided. The method includes preparing a process chamber including first and second electrodes spaced apart from and facing each other, and connecting the first electrode to a ground and connecting the second electrode to a radio frequency power source. An impedance in the process chamber is measured using a voltage value and a current value at the second electrode. The consumption amount of consumables in the process chamber is checked using the impedance. Varied process conditions are adjusted within an initial set range. | 06-16-2011 |
20110215072 | PLASMA APPARATUS HAVING A CONTROLLER FOR CONTROLLING A PLASMA CHAMBER AND METHODS FOR CONTROLLING THE PLASMA APPARATUS - Provided is a method for controlling a plasma apparatus. The method includes measuring a plasma spectrum in a plasma chamber by an optical emission spectroscopy, setting a baseline of the measured plasma spectrum, normalizing the measured plasma spectrum by dividing a value of the measured plasma spectrum by a value of the baseline, and controlling the plasma chamber by setting parameters of a plasma process using the normalized plasma spectrum. A plasma apparatus is also provided. | 09-08-2011 |
20120150330 | METHOD OF CONTROLLING SEMICONDUCTOR PROCESS DISTRIBUTION - A method of controlling process distribution of a semiconductor process includes receiving process distribution data representing the process distribution of the semiconductor process, receiving a parameter related to the process distribution, generating a virtual metrology model corresponding to the process distribution based on a relationship between the process distribution data and the parameter, and modifying a process variable affecting the process distribution based on the virtual metrology model. | 06-14-2012 |
Patent application number | Description | Published |
20080296660 | LOW RESISTIVITY CONDUCTIVE STRUCTURES, DEVICES AND SYSTEMS INCLUDING SAME, AND METHODS FORMING SAME - A conductive structure and method for making same is disclosed and includes a first nucleation layer formed by performing a cyclic deposition process on a substrate, a second nucleation layer formed on the first nucleation layer by a CVD process, and a bulk metal layer formed on the second nucleation layer. | 12-04-2008 |
20090035941 | METHODS AND APPARATUS FOR MANUFACTURING A SEMICONDUCTOR DEVICE IN A PROCESSING CHAMBER - An apparatus for manufacturing a semiconductor device includes a process chamber configured to perform a plurality of different processes on a substrate. A gas supply unit is configured to supply at least one process gas to the process chamber. At least one upper electrode unit is positioned at an upper portion of the process chamber. At least one lower electrode unit is opposite the upper electrode unit and configured to support a substrate thereon. A driving member is connected to at least one of the lower electrode unit and the upper electrode unit and is configured to move the lower electrode unit and/or the upper electrode unit to control a distance between the upper and the lower electrode units. A power supply unit is configured to apply a first power to the upper electrode unit and to apply a second power to the lower electrode unit. | 02-05-2009 |
20090137117 | Method Forming Contact Plug for Semiconductor Device Using H2 Remote Plasma Treatment - Provided are methods of forming a contact plug of a semiconductor device. Methods of forming a contact plug of a semiconductor device may include forming an interlayer insulating layer on a semiconductor substrate on which a lower structure is formed, forming a contact hole in the interlayer insulating layer, the contact hole exposing the lower structure, and forming a W layer and then a WN layer to form a W/WN barrier layer in the contact hole. Methods may include H | 05-28-2009 |
20100109094 | METHOD FOR FORMING SILICIDE CONTACTS - Contacts having different characteristics may be created by forming a first silicide layer over a first device region of a substrate, and then forming a second silicide layer over a second device region while simultaneously further forming the first silicide layer. A first contact hole may be formed in a dielectric layer over a first device region of a substrate. A silicide layer may then be formed in the first contact hole. A second contact hole may be formed after the first contact hole and silicide layer is formed. A second silicidation may then be performed in the first and second contact holes. | 05-06-2010 |
Patent application number | Description | Published |
20080214012 | Apparatus and method for fabricating semiconductor devices and substrates - An apparatus and method for fabricating semiconductor devices may increase reliability of the semiconductor devices by decreasing generation of particles and enhancing operation efficiency by decreasing the number of cleanings. The apparatus may include a chamber having a cover plate, susceptors for securely placing semiconductor substrates within the chamber, shower heads located on the cover plate to supply reaction gases into the chamber, and a curtain gas line connected to the cover plate to supply heated curtain gases between the shower heads. | 09-04-2008 |
20090014879 | Semiconductor device and method of manufacturing the same - In a method of forming a wiring structure for a semiconductor device, an insulation layer is formed on a semiconductor substrate on which a plurality of conductive structures is positioned. An upper surface of the insulation layer is planarized and spaces between the conductive structures are filled with the insulation layer. The insulation layer is partially removed from the substrate to form at least one opening through which the substrate is partially exposed. A residual metal layer is formed on a bottom and a lower portion of the sidewall of the at least one opening and a metal nitride layer is formed on the residual metal layer and an upper sidewall of the opening with a metal material. Accordingly, an upper portion of the barrier layer can be prevented from being removed in a planarization process for forming the metal plug. | 01-15-2009 |
20120012969 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a method of forming a wiring structure for a semiconductor device, an insulation layer is formed on a semiconductor substrate on which a plurality of conductive structures is positioned. An upper surface of the insulation layer is planarized and spaces between the conductive structures are filled with the insulation layer. The insulation layer is partially removed from the substrate to form at least one opening through which the substrate is partially exposed. A residual metal layer is formed on a bottom and a lower portion of the sidewall of the at least one opening and a metal nitride layer is formed on the residual metal layer and an upper sidewall of the opening with a metal material. Accordingly, an upper portion of the barrier layer can be prevented from being removed in a planarization process for forming the metal plug. | 01-19-2012 |
20120216954 | APPARATUS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICES AND SUBSTRATES - An apparatus and method for fabricating semiconductor devices may increase reliability of the semiconductor devices by decreasing generation of particles and enhancing operation efficiency by decreasing the number of cleanings. The apparatus may include a chamber having a cover plate, susceptors for securely placing semiconductor substrates within the chamber, shower heads located on the cover plate to supply reaction gases into the chamber, and a curtain gas line connected to the cover plate to supply heated curtain gases between the shower heads. | 08-30-2012 |
20130270714 | CONTACT STRUCTURE AND MANUFACTURING METHOD THEREOF - A semiconductor memory device includes conductive patterns vertically stacked on the substrate and having pad regions extended further at edge portions of the conductive patterns as the conductive patterns descend from an uppermost conductive pattern to a lowermost conductive pattern, a first contact plug disposed on a first pad region of the lowermost conductive pattern, a buffer conductive pattern disposed on a second pad region positioned above the first pad region, and a second contact plug formed on the buffer conductive pattern. | 10-17-2013 |
20140001625 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME | 01-02-2014 |
20140135968 | METHOD OF MAINTAINING A SEMICONDUCTOR PRODUCTION LINE - In one example embodiment, a method of maintaining a semiconductor manufacturing line includes setting up a recipe for controlling an implementation of a unit process based on which at least one semiconductor device is manufactured by a manufacturing facility. The method further includes collecting reference data of the manufacturing facility being controlled according to the reference recipe and obtaining a statistical model of the reference data and a health index of the statistical model, the health index being a limit beyond which an output of the semiconductor manufacturing line decreases. The method further includes controlling the implementation of the unit process and obtaining monitoring data during the implementation of the unit process using the statistical mode. The method further includes renewing the statistical model based on the monitoring data. | 05-15-2014 |
20140312456 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A semiconductor device can include wiring lines on a substrate and an interlayer insulating structure, between ones of the wiring lines. The wiring lines can include a pore-containing layer that includes a plurality of pores extending away from a surface of the substrate, wherein ones of the pores have respective volumes that increase with a distance from the substrate until reaching an air gap layer above the pore-containing layer and beneath uppermost surfaces of the wiring lines. | 10-23-2014 |