Patent application number | Description | Published |
20080214012 | Apparatus and method for fabricating semiconductor devices and substrates - An apparatus and method for fabricating semiconductor devices may increase reliability of the semiconductor devices by decreasing generation of particles and enhancing operation efficiency by decreasing the number of cleanings. The apparatus may include a chamber having a cover plate, susceptors for securely placing semiconductor substrates within the chamber, shower heads located on the cover plate to supply reaction gases into the chamber, and a curtain gas line connected to the cover plate to supply heated curtain gases between the shower heads. | 09-04-2008 |
20080296660 | LOW RESISTIVITY CONDUCTIVE STRUCTURES, DEVICES AND SYSTEMS INCLUDING SAME, AND METHODS FORMING SAME - A conductive structure and method for making same is disclosed and includes a first nucleation layer formed by performing a cyclic deposition process on a substrate, a second nucleation layer formed on the first nucleation layer by a CVD process, and a bulk metal layer formed on the second nucleation layer. | 12-04-2008 |
20090014879 | Semiconductor device and method of manufacturing the same - In a method of forming a wiring structure for a semiconductor device, an insulation layer is formed on a semiconductor substrate on which a plurality of conductive structures is positioned. An upper surface of the insulation layer is planarized and spaces between the conductive structures are filled with the insulation layer. The insulation layer is partially removed from the substrate to form at least one opening through which the substrate is partially exposed. A residual metal layer is formed on a bottom and a lower portion of the sidewall of the at least one opening and a metal nitride layer is formed on the residual metal layer and an upper sidewall of the opening with a metal material. Accordingly, an upper portion of the barrier layer can be prevented from being removed in a planarization process for forming the metal plug. | 01-15-2009 |
20090035941 | METHODS AND APPARATUS FOR MANUFACTURING A SEMICONDUCTOR DEVICE IN A PROCESSING CHAMBER - An apparatus for manufacturing a semiconductor device includes a process chamber configured to perform a plurality of different processes on a substrate. A gas supply unit is configured to supply at least one process gas to the process chamber. At least one upper electrode unit is positioned at an upper portion of the process chamber. At least one lower electrode unit is opposite the upper electrode unit and configured to support a substrate thereon. A driving member is connected to at least one of the lower electrode unit and the upper electrode unit and is configured to move the lower electrode unit and/or the upper electrode unit to control a distance between the upper and the lower electrode units. A power supply unit is configured to apply a first power to the upper electrode unit and to apply a second power to the lower electrode unit. | 02-05-2009 |
20090081863 | METHOD OF FORMING METAL WIRING LAYER OF SEMICONDUCTOR DEVICE - A method of forming a metal wiring layer of a semiconductor device produces metal wiring that is free of defects. The method includes forming an insulating layer pattern defining a recess on a substrate, forming a conformal first barrier metal layer on the insulating layer pattern, and forming a second barrier metal layer on the first barrier metal layer in such a way that the second barrier metal layer will facilitate the growing of metal from the bottom of the recess such that the metal can fill a bottom part of the recess completely and thus, form damascene wiring. An etch stop layer pattern is formed after the damascene wiring is formed so as to fill the portion of the recess which is not occupied by the damascene wiring. | 03-26-2009 |
20090137117 | Method Forming Contact Plug for Semiconductor Device Using H2 Remote Plasma Treatment - Provided are methods of forming a contact plug of a semiconductor device. Methods of forming a contact plug of a semiconductor device may include forming an interlayer insulating layer on a semiconductor substrate on which a lower structure is formed, forming a contact hole in the interlayer insulating layer, the contact hole exposing the lower structure, and forming a W layer and then a WN layer to form a W/WN barrier layer in the contact hole. Methods may include H | 05-28-2009 |
20090325371 | Methods of Forming Integrated Circuit Devices Having Stacked Gate Electrodes - A method of forming a gate electrode of a semiconductor device is provided, the method including: forming a plurality of stacked structures each comprising a tunnel dielectric layer, a first silicon layer for floating gates, an intergate dielectric layer, a second silicon layer for control gates, and a mask pattern, on a semiconductor substrate in the stated order; forming a first interlayer dielectric layer between the plurality of stacked structures so that a top surface of the mask pattern is exposed; selectively removing the mask pattern of which the top surface is exposed; forming a third silicon layer in an area from which the hard disk layer was removed, and forming a silicon layer comprising the third silicon layer and the second silicon layer; recessing the first interlayer dielectric layer so that an upper portion of the silicon layer protrudes over the he first interlayer dielectric layer; and forming a metal silicide layer on the upper portion of the silicon layer. | 12-31-2009 |
20100045801 | System For Inputting Word-Image Into Information Device And Method For Inputting Word-Image - Disclosed are a word-image input system and a word-image input method, and more particularly, to a system for inputting an word-image into an information device and a method thereof that can enable the information device to read the word-image formed by placing a printed matter printed with words having a complicated language system at a proper location and pho-tographing the printed matter at optimized illuminance and distance. According to the present invention, it is possible to prevent the recognition rate for the word-image from being lowered due to shaking, spreading phenomenon and unstable illuminance when the word-image is recognized by the information device provided with the word recognition application. In addition, it is possible to easily input words such as Chinese having a complicated language system into the information device | 02-25-2010 |
20100060742 | System for Providing Word-Information - Disclosed is a word-information providing system that can form an image by photographing a printed matter recorded with words by a photographing device | 03-11-2010 |
20100105198 | Gate Electrode of semiconductor device and method of forming the same - A method of forming a gate electrode of a semiconductor device includes forming a first polysilicon layer in a peripheral circuit region of a substrate, forming a barrier layer on the first polysilicon layer, the barrier layer providing an ohmic contact, forming a stack structure including a tunneling insulation layer, an electric charge storing layer, and a blocking insulation layer in a memory cell region of the substrate, forming a second polysilicon layer on the barrier layer and the blocking insulation layer, and siliciding the second polysilicon layer and forming a silicide gate electrode. | 04-29-2010 |
20100109094 | METHOD FOR FORMING SILICIDE CONTACTS - Contacts having different characteristics may be created by forming a first silicide layer over a first device region of a substrate, and then forming a second silicide layer over a second device region while simultaneously further forming the first silicide layer. A first contact hole may be formed in a dielectric layer over a first device region of a substrate. A silicide layer may then be formed in the first contact hole. A second contact hole may be formed after the first contact hole and silicide layer is formed. A second silicidation may then be performed in the first and second contact holes. | 05-06-2010 |
20100112772 | Method of fabricating semiconductor device - A method of fabricating a semiconductor device includes: forming a first polysilicon layer having a first thickness in a peripheral circuit region formed on a substrate; forming a stack structure comprising a first tunneling insulating layer, a charge trap layer, and a blocking insulating layer in a memory cell region formed on the substrate; forming a second polysilicon layer having a second thickness that is less than the first thickness on the blocking insulating layer; and forming gate electrodes by siliciding the first and second polysilicon layers. | 05-06-2010 |
20100151672 | METHODS OF FORMING METAL INTERCONNECTION STRUCTURES - Methods of forming a metal interconnection structure are provided. The methods include forming an insulating layer on a semiconductor substrate including a first metal interconnection. The insulating layer is patterned to form an opening that exposes the first metal interconnection. A first diffusion barrier layer is formed on the exposed first metal interconnection. After forming the first diffusion barrier layer, a second diffusion barrier layer is formed on the first diffusion barrier layer in the opening, the second diffusion barrier layer contacting a sidewall of the opening. A second metal interconnection is formed on the second diffusion barrier layer. | 06-17-2010 |
20100151674 | Structures Electrically Connecting Aluminum and Copper Interconnections and Methods of Forming the Same - A structure and formation method for electrically connecting aluminum and copper interconnections stabilize a semiconductor metallization process using an inner shape electrically connecting the aluminum and copper interconnections. To this end, a copper interconnection is disposed on a semiconductor substrate. An interconnection induction layer and an interconnection insertion layer are sequentially formed on the copper interconnection to have a contact hole exposing the copper interconnection. An upper diameter of the contact hole may be formed to be larger than a lower diameter thereof. A barrier layer and an aluminum interconnection are filled in the contact hole. The aluminum interconnection is formed not to directly contact the copper interconnection through the contact hole. | 06-17-2010 |
20100272206 | TRANSMITTING/RECEIVING APPARATUS AND METHOD THEREOF IN CODEBOOK BASED MULTIPLE ANTENNA SYSTEM - A transmission/reception apparatus and a method thereof in a codebook-based multiple antenna system is provided. In a transmission method in a codebook-based Multiple Input Multiple Output (MIMO) system, control information is received from a receiver. A codeword is determined within an Open-Loop (OL)-MIMO codebook where a Closed-Loop (CL)-MIMO codebook is reused based on the control information. At least one data stream is transmitted via at least one antenna using the determined codeword. | 10-28-2010 |
20110053633 | Method and apparatus for triggering multicell MIMO schemes in multiple antenna system - A method for triggering multicell MIMO schemes in a multiple antenna system includes transmitting, at a Mobile Station (MS), a first feedback information for single-cell closed-loop MIMO to a Base Station (BS); requesting, at the BS, Normalized Interference Power (NIP) feedback from the MS based on the first feedback information; feeding, at the MS, the NIP back to the BS; selecting, at the BS, a first NIP threshold and a second NIP threshold based on the NIP fed back from the MS; and requesting, at the MS, one of a first MIMO scheme and a second MIMO scheme by comparing the calculated first and second NIPs with the first NIP threshold and the second NIP threshold. | 03-03-2011 |
20110092232 | APPARATUS AND METHOD FOR ELIMINATING INTER CELL INTERFERENCE IN MULTIPLE INPUT MULTIPLE OUTPUT WIRELESS COMMUNICATION SYSTEM - Provided is a device and a method for eliminating inter-cell interference in Multiple Input Multiple Output (MIMO) wireless communication system. The method for operating a user equipment for eliminating the inter-cell interference includes determining one or more optimum bands among bands not requested to be restricted from a neighboring cell, determining at least one of band and Precoding Matrix Index (PMI) to be requested to be restricted to the neighboring cell among the determined one or more optimum bands, and feeding back at least one of the band and PMI to be requested to be restricted to the neighboring cell to a serving base station. | 04-21-2011 |
20110189846 | METHODS OF MANUFACTURING NON-VOLATILE MEMORY DEVICES - A method of manufacturing a non-volatile memory device including a tunnel oxide layer, a preliminary charge storing layer and a dielectric layer on a semiconductor layer is disclosed. A first polysilicon layer is formed on the dielectric layer. A barrier layer and a second polysilicon layer are formed on the first polysilicon layer. The second polysilicon layer, the barrier layer, the first polysilicon layer, the dielectric layer, the preliminary charge storing layer and the tunnel oxide layer are patterned to form a tunnel layer pattern, a charge storing layer pattern, a dielectric layer pattern, a first control gate pattern, a barrier layer pattern and a second polysilicon pattern. A nickel layer is formed on the second polysilicon layer. Heat treatment is performed with respect to the second polysilicon pattern and the nickel layer to form a second control gate pattern including NiSi on the barrier layer pattern. | 08-04-2011 |
20110223949 | APPARATUS AND METHOD FOR MITIGATING INTER-CELL INTERFERENCE IN MULTIPLE ANTENNA SYSTEM - An apparatus and method for mitigating inter-cell interference in a Multiple Input Multiple Output (MIMO) system are provided. The method includes allocating a serving band for providing service to at least one Mobile Station (MS) through scheduling, receiving at least one request set for at least one neighboring cell, from at least one MS, updating the at least one request set considering a serving band of each MS, and transmitting the updated at least one request set to the at least one neighboring cell. The request set includes at least one piece of information among a band and Precoding Matrix Index (PMI) for making a use restriction request to a neighboring cell that exerts interference on an MS. | 09-15-2011 |
20110306205 | Semiconductor Device and Method of Fabricating the Same - Methods of forming a semiconductor device include providing a substrate having an area including a source and a drain region of a transistor. A nickel (Ni) metal film is formed on the substrate area including the source and the drain region. A first heat-treatment process is performed including heating the substrate including the metal film from a first temperature to a second temperature at a first ramping rate and holding the substrate including the metal film at the second temperature for a first period of time. A second heat-treatment process is then performed including heating the substrate including the metal film from a third temperature to a fourth temperature at a second ramping rate and holding the substrate at the fourth temperature for a second period of time. The fourth temperature is different from the second temperature and the second period of time is different from the first period of time. The sequentially performed first and second heat-treatment processes convert the Ni metal layer on the source and drain regions into a NiSi layer on the source and drain regions and a NiSi | 12-15-2011 |
20120012969 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a method of forming a wiring structure for a semiconductor device, an insulation layer is formed on a semiconductor substrate on which a plurality of conductive structures is positioned. An upper surface of the insulation layer is planarized and spaces between the conductive structures are filled with the insulation layer. The insulation layer is partially removed from the substrate to form at least one opening through which the substrate is partially exposed. A residual metal layer is formed on a bottom and a lower portion of the sidewall of the at least one opening and a metal nitride layer is formed on the residual metal layer and an upper sidewall of the opening with a metal material. Accordingly, an upper portion of the barrier layer can be prevented from being removed in a planarization process for forming the metal plug. | 01-19-2012 |
20120083089 | FABRICATING METHOD OF METAL SILICIDE LAYER, FABRICATING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME AND SEMICONDUCTOR DEVICE FABRICATED USING THE METHOD - A method of fabricating a metal silicide layer includes forming a metal layer on a substrate, and forming a pre-metal silicide layer by reacting the substrate with the metal layer by performing a first annealing process on the substrate. The method also includes implanting silicon into the substrate using a gas cluster ion beam (GCIB) process, and changing the pre-metal silicide layer into a metal silicide layer by performing a second annealing process on the substrate. | 04-05-2012 |
20120216954 | APPARATUS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICES AND SUBSTRATES - An apparatus and method for fabricating semiconductor devices may increase reliability of the semiconductor devices by decreasing generation of particles and enhancing operation efficiency by decreasing the number of cleanings. The apparatus may include a chamber having a cover plate, susceptors for securely placing semiconductor substrates within the chamber, shower heads located on the cover plate to supply reaction gases into the chamber, and a curtain gas line connected to the cover plate to supply heated curtain gases between the shower heads. | 08-30-2012 |
20130316535 | METHODS OF FORMING SEMICONDUCTOR DEVICES WITH METAL SILICIDE USING PRE-AMORPHIZATION IMPLANTS AND DEVICES SO FORMED - A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion. | 11-28-2013 |
20140118507 | APPARATUS AND METHOD FOR DEPTH MANIPULATION OF STEREOSCOPIC 3D IMAGE - Provided are an apparatus and a method for manipulating depth of a stereoscopic image that enable a user to manipulate depth of a stereoscopic image easily and intuitively. The apparatus may include: a histogram analyzing unit acquiring a depth distribution chart by performing histogram analysis of a disparity map corresponding to an input image; a Gaussian mixture model (GMM) fitting unit acquiring multiple depth layers by performing GMM fitting of the depth distribution chart; a disparity adjusting unit adjusting at least one of a position and a volume of at least one of the multiple depth layers and calculating a disparity mapping function on which a result of the adjustment is reflected in response to a user request; and a disparity map recalculating unit calculating a new disparity map by optimizing the disparity mapping function. | 05-01-2014 |
20140120937 | APPARATUS AND METHOD FOR MITIGATING INTER-CELL INTERFERENCE IN MULTIPLE ANTENNA SYSTEM - A method for operating a Base Station (BS) in a wireless communication system is provided. The method comprises of receiving at least one request set for at least one neighboring cell, from at least one Mobile Station (MS), updating the at least one request set based at least in part on a serving band of each MS, and transmitting the updated at least one request set to the at least one neighboring cell, wherein the request set comprises a band and a Precoding Matrix Index (PMI) for making a use restriction or recommendation request to a neighboring cell. | 05-01-2014 |
20140125666 | APPARATUS AND METHOD FOR GENERATING DEPTH MAP OF STEREOSCOPIC IMAGE - There are provided a method and an apparatus for generating a depth map of a stereoscopic image that are capable of representing the depth perception of an image more finely by considering not only vanishing points but also fine lines formed within an image. The method includes: generating multiple line segments by grouping multiple edge pixels within an input image based on an intensity gradient direction; merging the multiple line segments based on similarity and thereafter detecting at least one vanishing point in consideration of a result of the merging; and generating an energy depth function on which correlation between the line segments and the vanishing point is reflected and generating a depth map by decoding the energy depth function. | 05-08-2014 |