Patent application number | Description | Published |
20080296594 | NITRIDE OPTOELECTRONIC DEVICES WITH BACKSIDE DEPOSITION - Nitride optoelectronic devices that have asymmetric double-sided structures and methods fabricating such structures are disclosed. Two n-type III-N layers are formed simultaneously over opposite sides of a substrate with substantially the same composition. Thereafter, a p-type III-N active layer is formed over one of the n-type III-N layers but not over the other. | 12-04-2008 |
20090149008 | METHOD FOR DEPOSITING GROUP III/V COMPOUNDS - Embodiments of the invention generally relate to methods for forming Group III-V materials by a hydride vapor phase epitaxy (HVPE) process. In one embodiment, a method for forming a gallium nitride material on a substrate within a processing chamber is provided which includes heating a metallic source to form a heated metallic source, wherein the heated metallic source contains gallium, aluminum, indium, alloys thereof, or combinations thereof, exposing the heated metallic source to chlorine gas while forming a metallic chloride gas, exposing the substrate to the metallic chloride gas and a nitrogen precursor gas while forming a metal nitride layer on the substrate during the HVPE process. The method further provides exposing the substrate to chlorine gas during a pretreatment process prior to forming the metal nitride layer. In one example, the exhaust conduit of the processing chamber is heated to about 200° C. or less during the pretreatment process. | 06-11-2009 |
20100261340 | CLUSTER TOOL FOR LEDS - The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process. | 10-14-2010 |
20100273291 | DECONTAMINATION OF MOCVD CHAMBER USING NH3 PURGE AFTER IN-SITU CLEANING - Embodiments of the present invention generally relate to methods and apparatus for removing unwanted deposition build-up from one more interior surfaces of a substrate processing chamber after a substrate is processed in a chamber to form, for example, Group III-V materials by metal-organic chemical vapor deposition (MOCVD) deposition processes and/or hydride vapor phase epitaxial (HVPE) deposition processes. In one embodiment, a method for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber is provided. The method comprises depositing one or more Group III containing layers over a substrate disposed in the substrate processing chamber, transferring the substrate out of the substrate processing chamber, and pulsing a halogen containing gas into the substrate processing chamber to remove at least a portion of the unwanted deposition build-up from one or more interior surfaces of the substrate processing chamber. | 10-28-2010 |
20110027973 | METHOD OF FORMING LED STRUCTURES - One embodiment of fabricating a p-down light emitting diode (LED) structure comprises depositing a high crystal quality p type contact layer, depositing an active region on top of the p type contact layer, and depositing an n type contact layer on top of the active region using a hydride vapor phase epitaxy (HVPE) process. The high crystal quality p type contact layer is deposited at high temperature to ensure the high crystal quality of the p type film. The n type contact layer is formed on top of the active region in a HVPE chamber at a low temperature to prevent thermal damage to the quantum wells in the active region below the n type contact layer. The processing chamber used to form the p type contact layer is a separate processing chamber than the processing chamber used to form the n type contact layer. | 02-03-2011 |
20110027974 | INDIUM SURFACTANT ASSISTED HVPE OF HIGH QUALITY GALLIUM NITRIDE AND GALLIUM NITRIDE ALLOY FILMS - One embodiment of depositing a gallium nitride (GaN) film on a substrate comprises providing a source of indium (In) and gallium (Ga) and depositing a monolayer of indium (In) on the surface of the gallium nitride (GaN) film. The monolayer of indium (In) acts as a surfactant to modify the surface energy and facilitate the epitaxial growth of the film by suppressing three dimensional growth and enhancing or facilitating two dimensional growth. The deposition temperature is kept sufficiently high to enable the indium (In) to undergo absorption and desorption on the gallium nitride (GaN) film without being incorporated into the solid phase gallium nitride (GaN) film. The gallium (Ga) and indium (In) can be provided by a single source or separate sources. | 02-03-2011 |
20110030615 | METHOD AND APPARATUS FOR DRY CLEANING A COOLED SHOWERHEAD - The present invention generally provides a method and apparatus for cleaning a showerhead of a deposition chamber, such as a metal organic chemical vapor deposition (MOCVD) chamber. In one embodiment, the showerhead is cleaned without exposing the chamber to the atmosphere outside of the chamber (i.e., in situ cleaning). In one embodiment, flow of liquid coolant through a cooling system that is in fluid communication with the showerhead is redirected to bypass the showerhead, and the liquid coolant is drained from the showerhead. In one embodiment, any remaining coolant is flushed from the showerhead via a pressurized gas source. In one embodiment, the showerhead is then heated to an appropriate cleaning temperature. In one embodiment, the flow of liquid coolant from the cooling system is then redirected to the showerhead and the system is adjusted for continued processing. Thus, the entire showerhead cleaning process is performed with minimal change to the flow of coolant through the cooling system. | 02-10-2011 |
20110033966 | GROWTH OF N-FACE LED WITH INTEGRATED PROCESSING SYSTEM - Embodiments described herein generally relate to apparatus and methods for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes and hydride vapor phase epitaxial (HVPE) processes. In one embodiment, a method for fabricating a nitrogen-face (N-face) polarity compound nitride semiconductor device is provided. The method comprises depositing a nitrogen containing buffer layer having N-face polarity over one or more substrates using a metal organic chemical vapor deposition (MOCVD) process to form one or more substrates having N-face polarity and depositing a gallium nitride (GaN) layer over the nitrogen containing buffer layer using a hydride vapor phase epitaxial (HVPE) deposition process, wherein the nitrogen containing buffer layer and the GaN layer are formed without breaking vacuum and exposing the one or more substrates to atmosphere. | 02-10-2011 |
20110079251 | METHOD FOR IN-SITU CLEANING OF DEPOSITION SYSTEMS - A method for in-situ cleaning of a deposition system is disclosed. The method includes providing a deposition system with portions of the deposition system deposited with at least a group III element or a compound of a group III element. Halogen containing fluid is introduced into the deposition system. The halogen containing fluid is permitted to react with the group III element to form a halide. The halide in solid state is converted to a gaseous state. The halide in gaseous state is purged out of the deposition system. | 04-07-2011 |
20110081771 | MULTICHAMBER SPLIT PROCESSES FOR LED MANUFACTURING - Embodiments described herein generally relate to methods for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes and/or hydride vapor phase epitaxial (HVPE) processes. In one embodiment, deposition of a group III | 04-07-2011 |
20110117728 | METHOD OF DECONTAMINATION OF PROCESS CHAMBER AFTER IN-SITU CHAMBER CLEAN - A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process. | 05-19-2011 |
20110143471 | SURFACE PASSIVATION TECHNIQUES FOR CHAMBER-SPLIT PROCESSING - Surface passivation techniques for chamber-split processing are described. A method includes forming a first Group III-V material layer above a substrate, the first Group III-V material layer having a top surface. A passivation layer is deposited on the top surface of the Group III-V material layer. The passivation layer is removed. Subsequently, a second Group III-V material layer is formed above the first Group III-V material layer. | 06-16-2011 |
20110171758 | RECLAMATION OF SCRAP MATERIALS FOR LED MANUFACTURING - A method for reclamation of scrap materials during the formation of Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes and/or hydride vapor phase epitaxial (HVPE) processes is provided. More specifically, embodiments described herein generally relate to methods for repairing or replacing defective films or layers during the formation of devices formed by these materials. By periodic testing of the layers during the formation process, low-quality layers that may result in low-quality or defective devices may be detected prior to completion of the device. These low-quality layers may be partially or completely removed and redeposited to reclaim the substrate and any remaining high-quality layers that were previously deposited under the low-quality layer. | 07-14-2011 |
20110204376 | GROWTH OF MULTI-JUNCTION LED FILM STACKS WITH MULTI-CHAMBERED EPITAXY SYSTEM - Apparatus and method for growth of non-p-type GaN layers over p-type GaN layers. Embodiments include multi-junction LED film stacks, multi-junction LED devices paired into units and multi-junction LED arrays of the paired units. Epitaxial growths of p-type and non-p-type material layers are split between epitaxial chambers clustered onto a single platform to reduce p-type dopant cross-contamination. Arrayed multi-junction LED devices provide improved packing density and reduced blinking during AC operation. | 08-25-2011 |
20110204378 | GROWTH OF GROUP III-V MATERIAL LAYERS BY SPATIALLY CONFINED EPITAXY - Techniques for crack-free growth of GaN, and related, films on larger-size substrates via spatially confined epitaxy are described. | 08-25-2011 |
20110207256 | IN-SITU ACCEPTOR ACTIVATION WITH NITROGEN AND/OR OXYGEN PLASMA TREATMENT - Embodiments of the present invention generally relate to methods and apparatus for the manufacturing of devices, such as light emitting diodes (LEDs), laser diodes (LDs) and, more particularly, to processes for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes. In one embodiment, a method for fabricating a compound nitride structure on a substrate is provided. The method comprises depositing a p-type doped Group III-nitride film over one or more substrates in a processing chamber and exposing the p-type doped Group III-nitride film to a plasma in the processing chamber to activate the p-type dopant by breaking up hydride complexes formed between the p-type dopant and hydrogen. | 08-25-2011 |
20110210425 | FORMATION OF GROUP III-V MATERIAL LAYERS ON PATTERNED SUBSTRATES - Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described. | 09-01-2011 |
20110227037 | ENHANCEMENT OF LED LIGHT EXTRACTION WITH IN-SITU SURFACE ROUGHENING - The embodiments of the present invention generally relates to methods for enhancing the light extraction by surface roughening of the bottom n-GaN layer and/or top p-GaN layer so that the internal light from the active region is scattered outwardly to result in a higher external quantum efficiency. In one embodiment, a surface roughening process is performed on the n-GaN layer to form etching pits in a top surface of the n-GaN layer. Once the etching pits are formed, growth of the n-GaN material may be resumed on the roughened n-GaN layer to partially fill the etching pits, thereby forming air voids at the interface of the n-GaN layer and the subsequent, re-growth n-GaN layer. These air voids provide one or more localized regions with indices of reflection different from that of the n-GaN layer, such that the internal light generated by the active layers (e.g., the InGaN MQW layer), when passing through the n-GaN layer, is scattered by voids or bubbles. The surface roughening process may be further performed on a top surface of a p-GaN layer to scatter the light emitted from the active layers outwardly rather than being reflected back to the active layers. | 09-22-2011 |
20110244617 | FORMING A COMPOUND-NITRIDE STRUCTURE THAT INCLUDES A NUCLEATION LAYER - The present invention generally provides apparatus and methods for forming LED structures. In one embodiment where a sapphire substrate is selected, the growth of bulk Group III-nitrides may be deposited in a HVPE or MOCVD chamber while a separate processing chamber, such as a PVD, MOCVD, CVD, or ALD chamber, may be used to grow buffer layers on the sapphire substrate at lower growth rate. The buffer layer may be GaN, AlN, AlGaN, InGaN, or InAlGaN. In another embodiment where a silicon-based substrate is selected, the growth of bulk Group III-nitrides may be deposited in a HVPE or MOCVD chamber in which an Al-free environment is provided while a separate processing chamber with a Ga-free environment is used to grow a Ga-free buffer layer, such as Al, AlN, or SiN, on the silicon-based substrate. The separate processing chamber may be a PVD, CVD, MOCVD, a plasma assisted MOCVD, or other vapor phase deposition techniques. | 10-06-2011 |
20110244663 | FORMING A COMPOUND-NITRIDE STRUCTURE THAT INCLUDES A NUCLEATION LAYER - The present invention generally provides apparatus and methods for forming LED structures. In one embodiment, a method for fabricating a compound nitride-based semiconductor structure is provided. The method comprises forming a Group III-nitride buffer layer over one or more substrates in a first processing chamber, transferring the one or more substrates having the Group III-nitride buffer layer deposited thereon into a second processing chamber without exposing the one or more substrates to an ambient atmospheric environment, and forming a bulk Group III-V layers over the Group III-nitride buffer layer in the second processing chamber. In one example, the first processing chamber may be a MOCVD, PVD based chamber, CVD based chamber, ALD based chamber, sputtering chamber, or any other vapor deposition chamber. The second processing chamber may be a MOCVD or HVPE chamber. | 10-06-2011 |
20110260210 | GAN-BASED LEDS ON SILICON SUBSTRATES WITH MONOLITHICALLY INTEGRATED ZENER DIODES - Monolithically integrated GaN LEDs with silicon-based ESD protection diodes. Hybrid MOCVD or HVPE epitaxial systems may be utilized for in-situ epitaxially growth of doped silicon containing films to form both the silicon-based ESD protection diode material stacks as well as a silicon containing transition layer prior to growth of a GaN-based LED material stack. The silicon-based ESD protection diodes may be interconnected with layers of a GaN LED material stack to form Zener diodes connected with the GaN LEDs. | 10-27-2011 |
20110263098 | HYBRID DEPOSITION CHAMBER FOR IN-SITU FORMATION OF GROUP IV SEMICONDUCTORS & COMPOUNDS WITH GROUP III-NITRIDES - Hybrid MOCVD or HVPE epitaxial system for in-situ epitaxially growth of group III-nitride layers and group IV semiconductor layers and/or group IV compounds. A hybrid deposition chamber is coupled to each of a first and second precursor delivery system to grow both a transition film comprising either group IV semiconductor or group IV compound and a film comprising a group III-nitride on the transition film. In one embodiment, the first precursor delivery system is coupled to both a silicon precursor and a second group IV precursor while the second precursor delivery system is coupled to a metalorganic precursor. In embodiments, a layer comprising a silicon semiconductor is deposited over a substrate and a group III-nitride epitaxial film is then deposited in-situ over the substrate. | 10-27-2011 |
20110308453 | CLOSED LOOP MOCVD DEPOSITION CONTROL - A method and apparatus are provided for monitoring and controlling substrate processing parameters for a cluster tool that utilizes chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates within a processing chamber. A closed-loop control system performs in-situ monitoring of the Group III-nitride film growth rate and adjusts film growth parameters as required to maintain a target growth rate. In another embodiment, a closed-loop control system performs in-situ monitoring of film growth parameters for multiple processing chambers for one or more film deposition systems. | 12-22-2011 |
20120037068 | COMPOSITE SUBSTRATES FOR DIRECT HEATING AND INCREASED TEMPERATURE UNIFORMITY - Embodiments of the present invention generally relate to apparatus and methods for uniformly heating substrates. The apparatus include a transferable puck having at least one electrode and a dielectric coating. The transferable puck can be biased with a biasing assembly relative to a substrate, and transferred independently of the biasing assembly during a fabrication process while maintaining the bias relative to the substrate. The puck absorbs radiant heat from a heat source and uniformly conducts the heat to a substrate coupled to the puck. The puck has high emissivity and high thermal conductivity for absorbing and transferring the radiant heat to the substrate. The high thermal conductivity allows for a uniform temperature profile across the substrate, thereby increasing deposition uniformity. The method includes disposing a light-absorbing material on an optically transparent substrate, and radiating the light-absorbing material with a radiant heat source to heat the optically transparent substrate. | 02-16-2012 |
20130134441 | GAN-BASED LEDS ON SILICON SUBSTRATES WITH MONOLITHICALLY INTEGRATED ZENER DIODES - GaN LEDs monolithically integrated with silicon-based ESD protection diodes. Hybrid MOCVD or HVPE epitaxial systems may be utilized for in-situ epitaxially growth of doped silicon containing films to form both the silicon-based ESD protection diode material stacks as well as a silicon containing transition layer prior to growth of a GaN-based LED material stack. The silicon-based ESD protection diodes may be interconnected with layers of a GaN LED material stack to form Zener diodes connected with the GaN LEDs. | 05-30-2013 |
20140116470 | METHOD OF DECONTAMINATION OF PROCESS CHAMBER AFTER IN-SITU CHAMBER CLEAN - A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process. | 05-01-2014 |
20140367696 | FORMATION OF GROUP III-V MATERIAL LAYERS ON PATTERNED SUBSTRATES - Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described. | 12-18-2014 |