Patent application number | Description | Published |
20080295879 | Thermoelectric and Pyroelectric Energy Conversion Devices - New thermoelectric materials and devices are disclosed for application to high efficiency thermoelectric power generation. New functional materials based on oxides, rare-earth-oxides, rare-earth-nitrides, rare-earth phosphides, copper-rare-earth oxides, silicon-rare-earth-oxides, germanium-rare-earth-oxides and bismuth rare-earth-oxides are disclosed. Addition of nitrogen and phosphorus are disclosed to optimize the oxide material properties for thermoelectric conversion efficiency. New devices based on bulk and multilayer thermoelectric materials are described. New devices based on bulk and multilayer thermoelectric materials using combinations of at least one of thermoelectric and pyroelectric and ferroelectric materials are described. Thermoelectric devices based on vertical pillar and planar architectures are disclosed. The advantage of the planar thermoelectric effect allows utility for large area applications and is scalable for large scale power generation plants. | 12-04-2008 |
20090001329 | RARE EARTH-OXIDES, RARE EARTH-NITRIDES, RARE EARTH-PHOSPHIES, AND TERNARY ALLOYS WITH SILICON - Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)—(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices. | 01-01-2009 |
20090085115 | TRANSISTOR AND IN-SITU FABRICATION PROCESS - A method of fabricating semiconductor components in-situ and in a continuous integrated sequence includes the steps of providing a single crystal semiconductor substrate, epitaxially growing a first layer of rare earth insulator material on the semiconductor substrate, epitaxially growing a first layer of semiconductor material on the first layer of rare earth insulator material, epitaxially growing a second layer of rare earth insulator material on the first layer of semiconductor material, and epitaxially growing a second layer of semiconductor material on the second layer of rare earth insulator material. The first layer of rare earth insulator material, the first layer of semiconductor material, the second layer of rare earth insulator material, and the second layer of semiconductor material form an in-situ grown structure of overlying layers. The in-situ grown structure is etched to define a semiconductor component and electrical contacts are deposited on the semiconductor component. | 04-02-2009 |
20090236595 | Semiconductor Structures with Rare-earths - The present invention discloses structures to increase carrier mobility using engineered substrate technologies for a solid state device. Structures employing rare-earth compounds enable heteroepitaxy of different semiconductor materials of different orientations. | 09-24-2009 |
20090291535 | STACKED TRANSISTORS AND PROCESS - A method of horizontally stacking transistors on a common semiconductor substrate is initiated by providing a single crystal, generally silicon, semiconductor substrate. A plurality of transistors are formed on the single crystal semiconductor substrate and encapsulated in an insulating layer, such as silicon dioxide. One or more openings are formed through the insulating layer between the plurality of transistors so as to expose a surface of the single crystal semiconductor substrate. A layer of single crystal rare earth insulator material is epitaxially grown on the exposed surface of the single crystal semiconductor substrate. A layer of single crystal semiconductor material, generally silicon, is epitaxially grown on the layer of single crystal rare earth insulator material. An intermixed transistor is formed on the layer of single crystal semiconductor material. | 11-26-2009 |
20100084680 | SPONTANEOUS/STIMULATED LIGHT EMITTING .mu.-CAVITY DEVICE - A light emitting device with a p-cavity including a first spacer of single crystal dielectric material and an active area including single crystal erbium dielectric material positioned on the first spacer. The erbium dielectric material and the single crystal dielectric material of the first spacer are substantially crystal lattice matched at their juncture. A second spacer of single crystal dielectric material is positioned on the active area. The erbium dielectric material and the single crystal dielectric material of the second spacer are substantially crystal lattice matched at the second surface. The high-κ erbium dielectric provides a high gain μ-cavity that emits increased amounts of light in either spontaneous or stimulated modes of operation. | 04-08-2010 |
20100112736 | FULL COLOR DISPLAY - A full color display comprising a red, a green, and a blue light emitting diode, each light emitting diode including a light emitting region having at least one layer of single crystal rare earth material, the rare earth material in each of the light emitting diodes having at least one radiative transition, and the rare earth material producing a radiation wavelength of approximately 640 nm in the red light emitting diode, 540 nm in the green light emitting diode, and 460 nm in the blue light emitting diode. Generally, the color of each LED is determined by selecting a rare earth with a radiative transition producing a radiation wavelength at the selected color. In cases where the rare earth has more than one radiative transition, tuned mirrors can be used to select the desired color. | 05-06-2010 |
20110108908 | MULTILAYERED BOX IN FDSOI MOSFETS - A fully depleted MOSFET has a semiconductor-on-insulator substrate that includes a substrate material, a BOX positioned on the substrate material, and an active layer positioned on the BOX. The BOX includes a first layer of material with a first dielectric constant and a first thickness and a second layer of material having a second dielectric constant different than the first dielectric constant and a second thickness different than the first thickness. The first layer of material is positioned adjacent the substrate material and the second layer of material is positioned adjacent the active layer. Drain and source regions are formed in the active layer so as to be fully depleted. The drain and source regions are separated by a channel region in the active layer. A gate insulating layer overlies the channel region and a gate stack is positioned on the gate insulating region. It is anticipated that the structure is most useful for channel regions less than 90 nm long. | 05-12-2011 |
20120001171 | Semiconductor Structures with Rare-earths - The present invention discloses structures to increase carrier mobility using engineered substrate technologies for a solid state device. Structures employing rare-earth compounds enable heteroepitaxy of different semiconductor materials of different orientations. | 01-05-2012 |