Patent application number | Description | Published |
20080204943 | Magnetoresistive element, magnetic memory, magnetic head, and magnetic recording/reproducing device - A magnetoresistive element includes: a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer provided between the first magnetic layer and the second magnetic layer. At least one of the first magnetic layer and the second magnetic layer has a magnetic compound that is expressed by M | 08-28-2008 |
20080239542 | Magnetic recording head and magnetic recording method - A magnetic recording head includes: a main magnetic pole containing a ferromagnetic layer; a main magnetic pole-magnetization fixing portion containing an antiferromagnetic layer in contact with at least one side surface of the main magnetic pole; a heater for heating at least the main magnetic pole so that a magnetic interaction between the main magnetic pole and the main magnetic pole-magnetization fixing portion can be decreased; and a magnetic field generator for generating a magnetic field so as to direct a magnetization of the main magnetic pole in one direction. | 10-02-2008 |
20080239587 | Magneto-resistance effect element, magnetic head, magnetic recording device and magnetic memory - A magneto-resistance effect element includes: a first magnetic layer of which a first magnetization is fixed in one direction; a second magnetic layer of which a second magnetization is fixed in one direction; a spacer layer located between the first magnetic layer and the second magnetic layer and made of at least one selected from the group consisting of an oxide, a nitride, an oxynitride and a metal; and a current bias generating portion, which is located adjacent to the spacer layer, for applying a bias magnetic field to the spacer layer. | 10-02-2008 |
20080311431 | Magnetic multilayered film current element - A magnetic multilayered film current element includes: at least one magnetic layer; at least one film structure containing a first insulating layer where a first opening is formed, a second insulating layer where a second opening is formed and a conductor disposed between the first insulating layer and the second insulating layer under the condition that a distance “A” between the first insulating layer and a portion of the second insulating layer at a position of the second opening is set larger than a closest distance “B” between the first insulating layer and the second insulating layer; and a pair of electrodes for flowing current to a magnetic multilayered film containing the at least one magnetic layer and the at least one film structure along a stacking direction of the magnetic multilayered film. | 12-18-2008 |
20090080109 | Magnetic recording device - A magnetic recording device includes: a magnetic recording medium containing a plurality of recording layers; a magnetic recording head for conducting magnetic writing of information in the magnetic recording medium; and a magnetic reproducing head for conducting magnetic reading out of the information from the magnetic recording medium; wherein the magnetic recording head includes a high frequency oscillator for magnetically assisting the magnetic writing of the information so as to change a magnetization of at least one of the plurality of recording layers of the magnetic recording medium, thereby recording a plurality of information different from one another in the magnetic recording medium commensurate with a total amount of magnetization of the plurality of recording layers. | 03-26-2009 |
20090104475 | Magneto-resistance effect element - A method for manufacturing a magneto-resistance effect element includes: forming a first magnetic layer; forming a first metallic layer, on the first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; forming a functional layer, on the first metallic layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr; forming a second metallic layer, on the functional layer, mainly containing Al; treating the second metallic layer by means of oxidizing, nitriding or oxynitiriding so as to form a current confined layer including an insulating layer and a current path with a conductor passing a current through the insulating layer; and forming, on the current confined layer, a second magnetic layer. | 04-23-2009 |
20090109581 | MAGNETORESISTANCE EFFECT ELEMENT - There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni. | 04-30-2009 |
20090190262 | Magnetoresistive element and method of manufacturing the same - A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer formed of an oxygen- or nitrogen-containing material and arranged in the magnetization pinned layer, or in the magnetization free layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which a crystalline orientation plane of the functional layer is different from a crystalline orientation plane of its upper or lower adjacent layer. | 07-30-2009 |
20090190264 | Magnetoresistive element and method of manufacturing the same - A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer arranged in the magnetization pinned layer, in the magnetization free layer, in the interface between the magnetization pinned layer and the intermediate layer, in the interface between the intermediate layer and the magnetization free layer, or in the interface between the magnetization pinned layer or the magnetization free layer and the cap layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which the functional layer is formed of a layer including nitrogen and a metal material containing 5 atomic % or more of Fe. | 07-30-2009 |
20100226048 | MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETO-RESISTANCE EFFECT HEAD, MAGNETIC STORAGE AND MAGNETIC MEMORY - A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed. | 09-09-2010 |
20100323104 | METHOD FOR MANUFACTURING A MAGNETO-RESISTANCE EFFECT ELEMENT - An example method for manufacturing a magneto-resistance effect element involves irradiating inert gas ions to enhance an adhesive force between an area around an oxide layer and a metallic layer. | 12-23-2010 |
20110019312 | MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETO-RESISTANCE EFFECT HEAD, MAGNETIC STORAGE AND MAGNETIC MEMORY - A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed. | 01-27-2011 |
20110049090 | METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM - According to one embodiment, a method of manufacturing a magnetic recording medium includes forming a magnetic recording layer, an etching protection layer, and an adhesion layer on a substrate, applying a resist on the adhesion layer, transferring patterns of protrusions and recesses on the resist by imprinting to form a resist pattern, patterning the adhesion layer by using the resist pattern as a mask, patterning the etching protection layer by using the resist pattern as a mask, etching the magnetic recording layer by using patterns of the adhesion layer and the etching protection layer as masks to form patterns of protrusions and recesses of the magnetic recording layer and removing the pattern of the adhesion layer, stripping the pattern of the etching protection layer, and exposing the patterns of protrusions and recesses of the magnetic recording layer to a non-ionized reducing gas. | 03-03-2011 |
20110261478 | MAGNETORESISTIVE ELEMENT AND MAGNETIC RECORDING APPARATUS - According to one embodiment, a magnetoresistive element includes a stack and a pair of electrodes that allows electric current to flow through the stack in a direction perpendicular to a surface of the stack. The stack includes a cap layer, a magnetization pinned layer, a magnetization free layer provided between the cap layer and the magnetization pinned layer, a tunneling insulator provided between the magnetization pinned layer and the magnetization free layer, and a functional layer provided within the magnetization pinned layer, between the magnetization pinned layer and the tunneling insulator, between the tunneling insulator and the magnetization free layer, within the magnetization free layer, or between the magnetization free layer and the cap layer. The functional layer includes an oxide including at least one element selected from Zn, In, Sn and Cd and at least one element selected from Fe, Co and Ni. | 10-27-2011 |
20120009440 | MAGNETORESISTANCE EFFECT ELEMENT WITH A LAYER CONTAINING AN OXIDE AS A PRINCIPAL COMPONENT AND CONTAINING A MAGNETIC TRANSITION METAL ELEMENT WHICH DOES NOT BOND TO OXYGEN - There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni. | 01-12-2012 |
20120015214 | MAGNETO-RESISTANCE EFFECT ELEMENT - A magneto-resistance effect element, comprising a first magnetic layer, a first metallic layer, which is formed on said first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag, a current confined layer including an insulating layer and a current path which are made by oxidizing, nitriding or oxynitriding for a second metallic layer, mainly containing Al, formed on said first metallic layer, a functional layer, which is formed on said current confined layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr, a third metallic layer, which is formed on said functional layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; and a second magnetic layer which is formed on said third metallic layer. | 01-19-2012 |
20120129008 | MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETO-RESISTANCE EFFECT HEAD, MAGNETIC STORAGE AND MAGNETIC MEMORY - A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed. | 05-24-2012 |
20120192998 | METHOD OF MANUFACTURING A MAGNETO-RESISTANCE EFFECT ELEMENT - An example method for manufacturing a magneto-resistance effect element having a magnetic layer, a free magnetization layer, and a spacer layer includes forming a first metallic layer and forming, on the first metallic layer, a second metallic layer. A first conversion treatment is performed to convert the second metallic layer into a first insulating layer and to form a first metallic portion penetrating through the first insulating layer. A third metallic layer is formed on the first insulating layer and the first metallic portion. A second conversion treatment is performed to convert the third metallic layer into a second insulating layer and to form a second metallic portion penetrating through the second insulating layer. | 08-02-2012 |
20120206838 | MAGNETORESISTIVE ELEMENT HAVING A MAGNETIC COMPOUND, MAGNETIC MEMORY, MAGNETIC HEAD, AND A MAGNETIC RECORDING/REPRODUCING DEVICE - An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer. At least one of the first magnetic layer and the second magnetic layer includes a magnetic compound layer including a magnetic compound that is expressed by M1 | 08-16-2012 |
20120224279 | MAGNETIC RECORDING HEAD - An example magnetic recording head includes a main magnetic pole containing a ferromagnetic layer and a main magnetic pole-magnetization fixing portion containing an anti-ferromagnetic layer in contact with at least one side surface of the main magnetic pole. A heater for the main magnetic pole is configured so as to include an oxide layer with a metal path therein embedded in or provided in the vicinity of the main magnetic pole-magnetization fixing portion and a pair of electrodes, provided in the vicinity of the oxide layer, for flowing a current parallel to a surface of a recording medium through the metal path. A magnetic field generator generates a magnetic field so as to direct a magnetization of the main magnetic pole in one direction. | 09-06-2012 |
20120229936 | MAGNETO-RESISTANCE EFFECT DEVICE, AND MAGNETIC RECORDER - According to one embodiment, a magneto-resistance effect device includes: a multilayer structure having a cap layer; a magnetization pinned layer; a magnetization free layer provided between the cap layer and the magnetization pinned layer; a spacer layer provided between the magnetization pinned layer and the magnetization free layer; a function layer which is provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer, the function layer having oxide containing at least one element selected from Zn, In, Sn and Cd, and at least one element selected from Fe, Co and Ni; and a pair of electrodes for applying a current perpendicularly to a film plane of the multilayer structure. | 09-13-2012 |
20120241619 | SPECIMEN IDENTIFICATION SYSTEM AND SPECIMEN IDENTIFICATION DEVICE - In a specimen identification system, an oscillator directs a THz wave toward a channel that accommodates a specimen. A receiver detects the THz wave transmitted through the specimen. A first controller controls the oscillator to sweep the oscillation frequency of the THz wave within a frequency band. A receiver generates a receiving signal by sweeping the receiving frequency of the THz wave within the frequency band. A specimen identification unit specifies the specimen based on the waveform of the receiving signal within the frequency band. | 09-27-2012 |
20120250398 | MAGNETIC STORAGE ELEMENT, MAGNETIC STORAGE DEVICE, AND MAGNETIC MEMORY - A magnetic storage element according to an embodiment includes: a magnetic thin wire extending in a first direction and having a plurality of magnetic domains partitioned by domain walls; an electrode capable of applying a current flowing in the first direction and a current flowing in the opposite direction from the first direction, to the magnetic thin wire; and an assisting unit receiving an electrical input and assisting movement of the domain walls in an entire or part of the magnetic thin wire. | 10-04-2012 |
20120308728 | MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME - A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer arranged in the magnetization pinned layer, in the magnetization free layer, in the interface between the magnetization pinned layer and the intermediate layer, in the interface between the intermediate layer and the magnetization free layer, or in the interface between the magnetization pinned layer or the magnetization free layer and the cap layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which the functional layer is formed of a layer including nitrogen and a metal material containing 5 atomic % or more of Fe. | 12-06-2012 |
20140153139 | METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT - According to one embodiment, a method of manufacturing a magnetoresistive element includes a layered structure and a pair of electrodes, the layered structure including a cap layer, a magnetization pinned layer, a magnetization free layer, a spacer layer and a functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and including an oxide, the method including forming a film including a base material of the functional layer, performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical, and performing a reduction treatment using a reducing gas on the film after the oxidation treatment. | 06-05-2014 |
20140362477 | MAGNETO-RESISTANCE EFFECT DEVICE, AND MAGNETIC RECORDER - According to one embodiment, a magneto-resistance effect device includes: a multilayer structure having a cap layer; a magnetization pinned layer; a magnetization free layer provided between the cap layer and the magnetization pinned layer; a spacer layer provided between the magnetization pinned layer and the magnetization free layer; a function layer which is provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer, the function layer having oxide containing at least one element selected from Zn, In, Sn and Cd, and at least one element selected from Fe, Co and Ni; and a pair of electrodes for applying a current perpendicularly to a film plane of the multilayer structure. | 12-11-2014 |
20150082899 | STRAIN SENSING ELEMENT, PRESSURE SENSOR, MICROPHONE, BLOOD PRESSURE SENSOR, AND TOUCH PANEL - According to one embodiment, a strain sensing element provided on a deformable substrate, includes: a first magnetic layer; a second magnetic layer; and an intermediate layer. The second magnetic layer includes Fe | 03-26-2015 |