Patent application number | Description | Published |
20100079930 | SOLID ELECTROLYTIC CAPACITOR AND A METHOD FOR MANUFACTURING SAME - A first solid electrolytic capacitor according to the present invention comprises a capacitor element, an exterior resin covering the capacitor element, an anode terminal, a cathode terminal, and a metal wire. The capacitor element comprises an anode body from which an anode lead is extracted, a dielectric layer formed on a surface of the anode body, and a cathode layer formed on the dielectric layer. The anode terminal and the cathode terminal are electrically connected to the anode lead and the cathode layer, respectively, and extracted to an outer surface of the exterior resin, the anode terminal including an opposing part opposed to the anode lead in the exterior resin. The metal wire includes both ends connected to the opposing part and a curving part, and is provided to the anode lead, and at least a part of the curving part is electrically connected to the anode lead. | 04-01-2010 |
20100252913 | SEMICONDUCTOR DEVICE - A GaN layer is grown on a sapphire substrate, an SiO | 10-07-2010 |
20110280267 | SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS - This semiconductor laser apparatus includes a semiconductor laser chip and a package sealing the semiconductor laser chip. The package includes a base body made of resin, a first sealing member mounted on an upper surface of the base body and a translucent second sealing member mounted on a front surface of the base body. The base body has an opening passing through the base body from the upper surface to the front surface, and the side of the opening closer to the upper surface is sealed with the first sealing member, while the side of the opening closer to the front surface is sealed with the second sealing member. | 11-17-2011 |
20110280270 | SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS - This semiconductor laser apparatus includes a semiconductor laser chip and a package sealing the semiconductor laser chip. The package has a concave base portion with an opening provided in an upper surface and one side surface and a sealing member covering the opening, and the sealing member is mounted on a bonded region of the base portion through a sealant. | 11-17-2011 |
20120033695 | SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS - This semiconductor laser apparatus includes a package constituted by a plurality of members, having sealed space inside and a semiconductor laser chip arranged in the sealed space, while surfaces of the members located in the sealed space are covered with a covering agent made of an ethylene-polyvinyl alcohol copolymer. | 02-09-2012 |
20120033696 | SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS - This semiconductor laser apparatus includes a package having sealed space inside and a semiconductor laser chip arranged in the sealed space. The package has a first member and a second member bonded to each other with an adhesive, a covering agent made of an ethylene-vinyl alcohol copolymer is formed on a bonded region of the first member and the second member in the sealed space, and the adhesive is covered with the covering agent. | 02-09-2012 |
20120299052 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND OPTICAL DEVICE - A semiconductor light-emitting device capable of inhibiting a semiconductor light-emitting element from deterioration and capable of inhibiting the size of a package from enlargement is obtained. The semiconductor light-emitting device includes a semiconductor light-emitting element and a package sealing the semiconductor light-emitting element. The package includes a base portion mounted with the semiconductor light-emitting element and a cap portion mounted on the base portion for covering the semiconductor light-emitting element. At least either one of the base portion and the cap portion is made of a mixture of resin and a gas absorbent. | 11-29-2012 |
Patent application number | Description | Published |
20080204898 | OPTICAL PART FOR CAMERA AND METHOD OF FABRICATING THE SAME - An optical part for a camera comprising a substrate made of a polyolefin plastic and an optical resin layer placed on the substrate, wherein the surface of the substrate is provided with a polar group and the optical resin layer is formed from a resin composition including a fluorene compound having a (meth)acryloyl group. | 08-28-2008 |
20080233417 | OPTICAL POLYMER MATERIAL AND OPTICAL COMPONENT - The invention provides an optical polymer material having a low viscosity before curing, a high refractive index of a cured product, little alteration of refractive index under high temperature and high humidity, and an excellent heat resistant shock property and an optical component using the optical polymer material. | 09-25-2008 |
20100246100 | SOLID ELECTROLYTIC CAPACITOR - A solid electrolytic capacitor includes at least one capacitor element in which the other end of an anode lead extends beyond an exposed portion of an electrolyte layer exposed from a cathode layer. The solid electrolytic capacitor further includes: an anode terminal connected to the other end of the anode lead, a cathode terminal connected to the cathode layer, a resin layer and a resin outer package covering the capacitor element and the resin layer. The resin layer covering the exposed portion of the electrolyte layer, the other end of the anode lead, and a connecting part between the other end of the anode lead and the anode terminal. The resin layer includes a first resin layer covering the exposed portion and a second resin layer covering the first resin layer, the first resin layer being softer than the second resin layer. | 09-30-2010 |
Patent application number | Description | Published |
20080224151 | Nitride-based semiconductor element and method of forming nitride-based semiconductor
- A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained. | 09-18-2008 |
20080232762 | ORGANOMETALLIC POLYMER MATERIAL - An organometallic polymer material is obtained which excels in translucency, shows improved hardness after it is cured and exhibits high reliability at high temperature and high humidity. | 09-25-2008 |
20080248603 | Nitride-based semiconductor element and method of preparing nitride-based semiconductor - A method of preparing a nitride semiconductor capable of forming a nitride-based semiconductor layer having a small number of dislocations as well as a small number of crystal defects resulting from desorption with excellent crystallinity on the upper surface of a substrate through a small number of growth steps is proposed. The method of preparing a nitride-based semiconductor comprises steps of forming a mask layer on the upper surface of a substrate to partially expose the upper surface of the substrate, forming a buffer layer on the exposed part of the upper surface of the substrate and the upper surface of the mask layer and thereafter growing a nitride-based semiconductor layer. Thus, the outermost growth surface of the nitride-based semiconductor layer laterally grown on the mask layer does not come into contact with the mask layer. Therefore, desorption hardly takes place from the outermost growth surface of the nitride-based semiconductor layer, whereby a nitride-based semiconductor layer having a small number of defects is formed. Further, the mask layer is directly formed on the substrate, whereby the number of growth steps for the nitride-based semiconductor layer is reduced. | 10-09-2008 |
20090046379 | Laminated optical element - Disclosed herein is a reliable laminated optical element that is a hybrid optical element obtained by laminating an optical resin layer on an optical substrate such as a glass substrate, the optical resin layer being less likely to be separated from the optical substrate even under high temperature and high humidity conditions. | 02-19-2009 |
20110280266 | SEMICONDUCTOR LASER APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS - This semiconductor laser apparatus includes a semiconductor laser chip and a package sealing the semiconductor laser chip. The package has a base portion mounted with the semiconductor laser chip, a sealing member and a window member. The semiconductor laser chip is sealed with the base portion, the sealing member and the window member. At least two of the base portion, the sealing member and the window member are bonded to each other through a sealant made of an ethylene-polyvinyl alcohol copolymer. | 11-17-2011 |