Patent application number | Description | Published |
20110023060 | Targeted Video Advertising - A computer-implemented method of providing targeted video promotional material includes transmitting a promotional item for display on a video terminal, determining whether the promotional item was skipped, and updating a profile corresponding to the promotional item or a viewer of the promotional item based on whether or not the promotional item was skipped. | 01-27-2011 |
20120084813 | TARGETED VIDEO ADVERTISING - A computer-implemented method of providing targeted video promotional material includes transmitting a promotional item for display on a video terminal, determining whether the promotional item was skipped, and updating a profile corresponding to the promotional item or a viewer of the promotional item based on whether or not the promotional item was skipped. | 04-05-2012 |
20140082643 | Targeted Video Advertising - A computer-implemented method of providing targeted video promotional material includes transmitting a promotional item for display on a video terminal, determining whether the promotional item was skipped, and updating a profile corresponding to the promotional item or a viewer of the promotional item based on whether or not the promotional item was skipped. | 03-20-2014 |
20140280364 | DISPOSAL OF RARELY USED MEMBER VARIABLES VIA SHADOW STRUCTURES - A computer-controlled method can include determining at least one rarely-used field within a class, creating a shadow structure corresponding to the class, and moving the at least one rarely-used field from the class to the shadow structure. The method can also include adding a shadow reference to the class, the shadow reference corresponding to the shadow structure. | 09-18-2014 |
Patent application number | Description | Published |
20130124496 | CONTEXTUAL PROMOTION OF ALTERNATIVE SEARCH RESULTS - A toolbar extension of a web browser suggests a user try searching a different search engine than the one on which the user has just conducted a search. The toolbar detects the user is frustrated with the search results returned by the search engine by monitoring a number of session heuristics. Analyzing historical user session, log, and click data of other users who have submitted the search query to different search engines, a different search engine is selected that has historically generated better search results. A suggestion is then presented to the user to run the search query in the more effective search engine. Such a suggestion may be presented in a number of ways, but one embodiment displays a window next to the text field of the toolbar and provides a link to conduct a search for the search query in the more effective search engine. | 05-16-2013 |
20130132357 | QUERY REFINEMENT IN A BROWSER TOOLBAR - Embodiment described herein are generally directed to a toolbar extension of a web browser that grabs a user's search engine query and suggests a refined search query known to yield better search results. The toolbar recognizes the web page the user is on as being associated with a search engine and retrieves the user's search query. The toolbar interacts with a refinement component on a server, and the refinement component determines a refined search query based on confidence scores assigned to data mined from a data center affiliated with different search engine (one related to the toolbar). The refined search query is returned and displayed in a search field of the toolbar, allowing the user to easily run the refined search on the different search engine. | 05-23-2013 |
20130151538 | ENTITY SUMMARIZATION AND COMPARISON - An entity summarization system is described herein that mines the Internet and other data source to provide answers to questions such as the relative sentiment of users towards various brands. The system uses a controlled vocabulary list describing a specific aspect of entities of interest. Given an entity name, the system scans the whole content corpus to collect statistics on the words that occur most frequently in the context of the entity name, taking into account proximity information, to produce a weighted list of vocabulary terms describing the entity. Two entities can be compared by normalizing and comparing their weighted term lists. In some embodiments, the system performs these procedures efficiently by leveraging an N-gram web model. Thus, the system provides an automated way to compare two entities to derive information about how users feel about the entities at any given time. | 06-13-2013 |
Patent application number | Description | Published |
20090286063 | METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS - A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates comprised of Si, SiC, sapphire, GaN, AlN, GaAs, AlGaN and others. In one aspect, the crack-free Group III nitride layers are grown using a modified HVPE technique. If desired, the shape and the stress of Group III nitride layers can be controlled, thus allowing concave, convex and flat layers to be controllably grown. After the growth of the Group III nitride layer is complete, the substrate can be removed and the freestanding Group III nitride layer used as a seed for the growth of a boule of Group III nitride material. The boule can be sliced into individual wafers for use in the fabrication of a variety of semiconductor structures (e.g., HEMTs, LEDs, etc.). | 11-19-2009 |
20090286331 | METHOD FOR SIMULATENOUSLY PRODUCING MULTIPLE WAFERS DURING A SINGLE EPITAXIAL GROWTH RUN AND SEMICONDUCTOR STRUCTURE GROWN THEREBY - HVPE method for simultaneously fabricating multiple Group III nitride semiconductor structures during a single reactor run. A HVPE reactor includes a reactor tube, a growth zone, a heating element and a plurality of gas blocks. A substrate holder is capable of holding multiple substrates and can be a single or multi-level substrate holder. The gas delivery blocks are independently controllable. Gas flows from the delivery blocks are mixed to provide a substantially uniform gas environment within the growth zone. The substrate holder can be controlled, e.g., rotated and/or tilted, for uniform material growth. Multiple Group III nitride semiconductor structures can be grown on each substrate during a single fabrication run of the HVPE reactor. Growth on different substrates is substantially uniform and can be performed on larger area substrates, such as 3-12″ substrates. | 11-19-2009 |
Patent application number | Description | Published |
20080257256 | BULK GaN AND AlGaN SINGLE CRYSTALS - Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity. | 10-23-2008 |
20090092815 | METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS - A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates comprised of Si, SiC, sapphire, GaN, AlN, GaAs, AlGaN and others. In one aspect, the crack-free Group III nitride layers are grown using a modified HVPE technique. If desired, the shape and the stress of Group III nitride layers can be controlled, thus allowing concave, convex and flat layers to be controllably grown. After the growth of the Group III nitride layer is complete, the substrate can be removed and the freestanding Group III nitride layer used as a seed for the growth of a boule of Group III nitride material. The boule can be sliced into individual wafers for use in the fabrication of a variety of semiconductor structures (e.g., HEMTs, LEDs, etc.). | 04-09-2009 |
20090130781 | METHOD FOR SIMULTANEOUSLY PRODUCING MULTIPLE WAFERS DURING A SINGLE EPITAXIAL GROWTH RUN AND SEMICONDUCTOR STRUCTURE GROWN THEREBY - HVPE method for simultaneously fabricating multiple Group III nitride semiconductor structures during a single reactor run. A HVPE reactor includes a reactor tube, a growth zone, a heating element and a plurality of gas blocks. A substrate holder is capable of holding multiple substrates and can be a single or multi-level substrate holder. The gas delivery blocks are independently controllable. Gas flows from the delivery blocks are mixed to provide a substantially uniform gas environment within the growth zone. The substrate holder can be controlled, e.g., rotated and/or tilted, for uniform material growth. Multiple Group III nitride semiconductor structures can be grown on each substrate during a single fabrication run of the HVPE reactor. Growth on different substrates is substantially uniform and can be performed on larger area substrates, such as 3-12″ substrates. | 05-21-2009 |
20090148984 | BULK GaN AND AlGaN SINGLE CRYSTALS - Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity. | 06-11-2009 |
20110114015 | METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS - Method for producing a III-N (AlN, GaN, Al | 05-19-2011 |
20120076968 | METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS - Method for producing a III-N (AlN, GaN, Al | 03-29-2012 |