Curioni
Alessandro Curioni, Geneva CH
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20100320390 | Liquid xenon gamma ray imager - A gamma ray imager includes a chamber containing a scintillation liquid such as xenon and several mutually optically isolated interaction modules immersed in the scintillation liquid within the chamber. Multiple photodetectors optically coupled to the modules separately detect scintillation light resulting from gamma ray interactions in the modules. Charge readout devices coupled to the modules provide time projection chamber-class detection of ionization charges produced by gamma ray interactions within the modules. A signal processor connected to the multiple photodetectors and charge readout devices analyzes signals produced by gamma ray interactions within the modules and calculates from the signals gamma ray energy and gamma ray angle. The calculations use Compton scattering formula inversion and also use anti-correlation of prompt scintillation light signals from gamma ray interactions and charge signals from gamma ray interactions. | 12-23-2010 |
Alessandro Curioni, Gattikon CH
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20080293259 | METHOD OF FORMING METAL/HIGH-k GATE STACKS WITH HIGH MOBILITY - The present invention provides a gate stack structure that has high mobilities and low interfacial charges as well as semiconductor devices, i.e., metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the gate stack structure of the present invention is located between the substrate and an overlaying gate conductor. The present invention also provides a method of fabricating the inventive gate stack structure in which a high temperature annealing process (on the order of about 800° C.) is employed. The high temperature anneal used in the present invention provides a gate stack structure that has an interface state density, as measured by charge pumping, of about 8×10 | 11-27-2008 |
20100171187 | FORMATION OF HIGH-K GATE STACKS IN SEMICONDUCTOR DEVICES - A method of forming a high-K gate stack for a MOSFET device to control the threshold voltage for the MOSFET device. A first high-K metallic oxide layer is formed on a semiconductor substrate. At least one composite layer is then formed directly on the first layer. The composite layer is composed of a second high-K metallic oxide layer formed directly on a dipole induction layer. The dipole induction layer includes a high-K metallic oxide having higher oxygen vacancy affinity and lower oxygen vacancy diffusivity than the first and second layers. A metallic gate electrode is then formed on the composite layer. Formation of the various layers is such as to position the dipole induction layer of the composite layer between the gate electrode and substrate so as to shift the threshold voltage to a desired level. A high-K gate stack in a MOSFET device formed by the above method is also provided. | 07-08-2010 |
Alessandro Curioni, Rueschlikon CH
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20120005247 | PROCESSING OF LINEAR SYSTEMS OF EQUATIONS - Apparatus and computer programs are provided for generating n high-precision data elements corresponding to an n×1 vector x satisfying Ax=b where A is a symmetric, positive-definite n×n matrix corresponding to n×n predefined high-precision data elements and b is an n×1 vector corresponding to n predefined high-precision data elements. The apparatus ( | 01-05-2012 |
20140351289 | SIMPLIFICATION OF LARGE NETWORKS AND GRAPHS - Embodiments relate to simplifying large and complex networks and graphs using global connectivity information based on calculated node centralities. An aspect includes calculating node centralities of a graph until a designated number of central nodes are detected. A percentage of the central nodes are then selected as pivot nodes. The neighboring nodes to each of the pivot nodes are then collapsed until the graph shrinks to a predefined threshold of total nodes. Responsive to the number of total nodes reaching the predefined threshold, the simplified graph is outputted. | 11-27-2014 |
20140351290 | CALCULATING NODE CENTRALITIES IN LARGE NETWORKS AND GRAPHS - Embodiments related to calculating node centralities in large and complex networks and graphs. An aspect includes approximating a product of a matrix exponential and a random probe vector of an adjacency matrix, wherein the adjacency matrix represents a graph. A diagonal of the adjacency matrix is computed based on the product of the matrix exponential and the random probe vector. The node centralities are then calculated based on the computed diagonal until a designated number of central nodes has been detected according to embodiments. | 11-27-2014 |
20140351307 | CALCULATING NODE CENTRALITIES IN LARGE NETWORKS AND GRAPHS - Embodiments related to calculating node centralities in large and complex networks and graphs. An aspect includes approximating a product of a matrix exponential and a random probe vector of an adjacency matrix, wherein the adjacency matrix represents a graph. A diagonal of the adjacency matrix is computed based on the product of the matrix exponential and the random probe vector. The node centralities are then calculated based on the computed diagonal until a designated number of central nodes has been detected according to embodiments. | 11-27-2014 |
20140351564 | SIMPLIFICATION OF LARGE NETWORKS AND GRAPHS - Embodiments relate to simplifying large and complex networks and graphs using global connectivity information based on calculated node centralities. An aspect includes calculating node centralities of a graph until a designated number of central nodes are detected. A percentage of the central nodes are then selected as pivot nodes. The neighboring nodes to each of the pivot nodes are then collapsed until the graph shrinks to a predefined threshold of total nodes. Responsive to the number of total nodes reaching the predefined threshold, the simplified graph is outputted. | 11-27-2014 |
Alessandro Curioni US
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20120216862 | Silicon: Hydrogen Photovoltaic Devices, Such As Solar Cells, Having Reduced Light Induced Degradation And Method Of Making Such Devices - A method of producing a photovoltaic device includes providing a stretchable substrate for the photovoltaic device; and stretching the substrate to produce a stretched substrate. The method further includes depositing a structure comprising hydrogenated amorphous silicon onto the stretched substrate; and subjecting the deposited hydrogenated amorphous silicon structure and the stretched substrate to a compressive force to form a compressively strained photovoltaic device. | 08-30-2012 |
Alessandro Curioni, Zurich CH
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20130312828 | PHOTOVOLTAIC DEVICE WITH BAND-STOP FILTER - Photovoltaic device with band-stop filter. The photovoltaic device includes an amorphous photovoltaic material and a band-stop filter structure having a stopband extending from a lower limiting angular frequency ω | 11-28-2013 |