Patent application number | Description | Published |
20130155872 | METHODS, SYSTEMS, AND COMPUTER READABLE MEDIA FOR REDUCING THE IMPACT OF FALSE DOWNLINK CONTROL INFORMATION (DCI) DETECTION IN LONG TERM EVOLUTION (LTE) PHYSICAL DOWNLINK CONTROL CHANNEL (PDCCH) DATA - Methods, systems, and computer readable media for reducing the impact of false downlink control information (DCI) detection in long term evolution (LTE) physical downlink control channel (PDCCH) data are disclosed. According to one method, an LTE multi-UE simulator receives PDCCH data from an evolved node B (eNode B). The LTE multi-UE simulator applies blind DCI decoding to decode at least one DCI value from channel control elements that carry the PDCCH data. The LTE multi-UE simulator applies at least one false DCI detection countermeasure to identify as true or false DCIs from the DCIs detected using the blind decoding. | 06-20-2013 |
20130155878 | METHODS, SYSTEMS, AND COMPUTER READABLE MEDIA FOR IMPROVED LONG TERM EVOLUTION (LTE) HYBRID AUTOMATIC REPEAT REQUEST (HARQ) PROCESSING - Methods, systems, and computer readable media for performing long term evolution (LTE) hybrid automatic repeat request (HARQ) processing are disclosed. According to one method, the method occurs at a multi-UE simulator. The method includes receiving downlink control channel data for a plurality of user devices being simulated. The method also includes decoding HARQ data for each user device of the plurality of user devices. The method further includes performing at least one HARQ data verification step for each user device of the plurality of user devices and acting on the verified HARQ data for each user device of the plurality of user devices. | 06-20-2013 |
20130208603 | METHODS, SYSTEMS, AND COMPUTER READABLE MEDIA FOR PERFORMING LONG TERM EVOLUTION (LTE) CHANNEL DELINEATION - Methods, systems, and computer readable media for performing long term evolution (LTE) channel delineation are disclosed. According to one method, the method includes storing a plurality of channel delineation maps in memory. The method further includes receiving downlink data from an LTE radio link. The method also includes identifying one of the channel delineation maps using the received data. The method further includes performing channel delineation on the data using a preconfigured channel delineation map. | 08-15-2013 |
Patent application number | Description | Published |
20080276860 | CROSS FLOW APPARATUS AND METHOD FOR HYDRIDE VAPOR PHASE DEPOSITION - A method and apparatus for hydride vapor phase epitaxial (HVPE) deposition is disclosed. In the HVPE process, a hydride gas flows over a metal source to react with the metal source, which then reacts at the surface of a substrate to deposit a metal nitride layer. The metal source comprises gallium, aluminum, and/or indium. The hydride gas is evenly provided over the metal source to increase efficiency of hydride-metal source reaction. An exhaust positioned diametrically across the chamber from the metal source creates a cross flow of the hydride-metal source product and nitrogen precursor across the chamber tangential to the substrate. A purge gas flowing perpendicular to the cross flow directs the hydride-metal source product and nitrogen precursor to remain as close to the substrate as possible. | 11-13-2008 |
20080314311 | HVPE SHOWERHEAD DESIGN - A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages. | 12-25-2008 |
20090098276 | MULTI-GAS STRAIGHT CHANNEL SHOWERHEAD - A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors. | 04-16-2009 |
20100215854 | HVPE SHOWERHEAD DESIGN - A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages. | 08-26-2010 |
20120024388 | MULTI-GAS STRAIGHT CHANNEL SHOWERHEAD - A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors. | 02-02-2012 |
Patent application number | Description | Published |
20080293249 | In-situ photoresist strip during plasma etching of active hard mask - A method for etching features in a silicon layer is provided. A hard mask layer is formed over the silicon layer. A photoresist layer is formed over the hard mask layer. The hard mask layer is opened. The photoresist layer is stripped by providing a stripping gas; forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and stopping the stripping gas when the photoresist layer is stripped. The opening the hard mask layer and the stripping the photoresist layer are performed in a same chamber. | 11-27-2008 |
20080314733 | Methods of and apparatus for reducing amounts of particles on a wafer during wafer de-chucking - Particles are trapped away from a wafer transport zone in a chamber. A first electrode is on one side of the zone. A second electrode is on an opposite side of the zone. A power supply connected across the electrodes establishes an electrostatic field between the electrodes. The field traps particles at the electrodes, away from the zone. For transporting the wafer from the chamber, the second electrode mounts the wafer for processing, and the first electrode is opposite to the second electrode defining a process space. The zone is in the space with a separate part of the space separating the zone from each electrode. Particles are urged away from the wafer by simultaneously terminating plasma processing of the wafer, connecting the second electrode to ground, applying a positive DC potential to the first electrode, and de-chucking the wafer from the second electrode into the zone. | 12-25-2008 |
20130001754 | IN-SITU PHOTORESIST STRIP DURING PLASMA ETCHING OF ACTIVE HARD MASK - A method for etching features in a silicon layer is provided. A hard mask layer is formed over the silicon layer. A photoresist layer is formed over the hard mask layer. The hard mask layer is opened. The photoresist layer is stripped by providing a stripping gas; forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and stopping the stripping gas when the photoresist layer is stripped. The opening the hard mask layer and the stripping the photoresist layer are performed in a same chamber. | 01-03-2013 |