Patent application number | Description | Published |
20080291784 | Acoustic Wave Sensor - In an acoustic wave sensor for detecting a distance to an object and an orientation where the object is located with using acoustic waves, an acoustic wave generating device generating an acoustic wave by applying thermal impact to the air with no mechanical vibration is used as a wave transmitting device, and an electric capacitance microphone converting variation of pressure due to acoustic wave to variation of an electric signal is used as each wave receiving device. Therefore, dead zone caused by reverberation component included in the acoustic wave transmitted from the wave transmitting device and dead zone caused by reverberation component included in wave receiving signals outputted from the wave receiving devices can be shortened and angular sensitivity of the acoustic wave sensor can be increased, in comparison with a conventional acoustic wave sensor using piezoelectric devices as the wave transmitting device and the wave receiving devices. | 11-27-2008 |
20090092367 | Process of making a semiconductor optical lens and a semiconductor optical lens fabricated thereby - A semiconductor substrate with anode pattern is anodized to be shaped into an optical lens. The anodization utilizes an electrolytic solution which etches out oxidized portion as soon as it is formed as a result of the anodization, to thereby develop a porous layer in a pattern in match with the anode pattern. After being removed of the porous layer, the substrate is treated to smooth out minute projections remaining in the top surface of the substrate, thereby obtaining the lens of good transmissivity. | 04-09-2009 |
20090101509 | Process Of Making An Optical Lens - A semiconductor substrate is anodized to be shaped into an optical lens. Prior to being anodized, the substrate is finished with an anode pattern on its bottom surface so as to be consolidated into a unitary structure in which the anode pattern is precisely reproduced on the substrate. The anodization utilizes an electrolytic solution which etches out oxidized portion as soon as it is formed as a result of the anodization, to thereby develop a porous layer in a pattern in match with the anode pattern. The anode pattern brings about an in-plane distribution of varying electric field intensity by which the porous layer develops into a shape complementary to a desired lens profile. Upon completion of the anodization, the semiconductor substrate is shaped into the lens by etching out the porous layer and the anode pattern from the substrate. | 04-23-2009 |
20090104753 | Process of Forming a Curved Profile on a Semiconductor Substrate - A semiconductor substrate is shaped to have a curved surface profile by anodization. Prior to being anodized, the substrate is finished with an anode pattern on its bottom surface so as to be consolidated into a unitary structure in which the anode pattern is precisely reproduced on the substrate. The anodization utilizes an electrolytic solution which etches out oxidized portion as soon as it is formed as a result of the anodization, to thereby develop a porous layer in a pattern in match with the anode pattern. The anode pattern brings about an in-plane distribution of varying electric field intensity by which the porous layer develops into a shape complementary to a desired surface profile. Upon completion of the anodization, the curves surface is revealed on the surface of the substrate by etching out the porous layer and the anode pattern from the substrate. | 04-23-2009 |
20090145686 | PRESSURE WAVE GENERATOR AND PRODUCTION METHOD THEREFOR - A pressure wave generator is provided, which has excellent output stability over time. This pressure wave generator comprises a substrate, a heat generating layer, and a heat insulating layer formed between the substrate and the heat generating layer. A pressure wave is generated in a surrounding medium (air) by a change in temperature of the heat generating layer, which is caused upon energization of the heat generating layer. The heat insulating layer comprises a porous layer and a barrier layer formed between the porous layer and the heat generating layer to prevent diffusion of reactive substances such as oxygen and moisture in the air and impurities into the porous layer. By the formation of the barrier layer, it is possible to prevent a reduction in output of the pressure wave generator caused by a change over time of the porous layer. | 06-11-2009 |
20090266988 | INFRARED DETECTION UNIT USING A SEMICONDUCTOR OPTICAL LENS - An infrared detection unit includes a base carrying an infrared sensor element, and a cap configured to be fitted on the base to surround the infrared sensor element. The cap has a top wall with a window in which a semiconductor lens is fitted to collect an infrared radiation onto the infrared sensor element. The semiconductor optical lens is formed from a semiconductor substrate to have a convex lens and a flange which surround said convex lens. An infrared barrier is formed on the semiconductor lens to block the infrared radiation from passing through the boundary between the circumference of the convex lens and the window. Accordingly, the infrared sensor element can receive only the infrared radiation originating from a detection area intended by the convex lens. | 10-29-2009 |
20100176300 | INFRARED RAY DETECTOR - An infrared ray detector comprises a prism element, a condenser lens, and an infrared ray receiving unit. The prism element is configured to convert the infrared ray irradiated from a detection area of a viewing field to the infrared ray proceeding toward the condenser lens. The condenser lens is configured to concentrate the infrared ray into the infrared ray receiving unit. The infrared ray receiving unit includes a plurality of the infrared ray detection elements. The infrared ray detection elements are arranged in an alternate fashion so as to output electrical signals of positive polarity and negative polarity. Consequently, the infrared ray detector is configured to detect the infrared ray irradiated from a plurality of the detection area, and is configured to detect the infrared ray on the basis of movement of the human in the detection area. | 07-15-2010 |
20100259396 | FIRE ALARM SYSTEM - A fire alarm system, determining existence or nonexistence of a fire by using an ultrasound wave, comprises a sound wave generator and a sound wave detector to detect sound waves propagated through two propagation paths having different lengths each other. The system comprises a calculation means for calculating a pressure ratio between a first sound pressure, which is a sound pressure of a sound wave propagated through a first propagation path, and a second sound pressure, which is a sound pressure of a sound wave propagated through a second propagation path, and a smoke density estimator. The smoke density estimator calculates a change ratio between the pressure ratio calculated by the calculation means and a predetermined standard pressure ratio, and determines a smoke density from the change ratio based on a predetermined relational expression describing the relation between the change ratio and the smoke density, and determines existence of a fire when the smoke density exceeds a predetermined threshold. | 10-14-2010 |