Patent application number | Description | Published |
20090169457 | POLYSILANE PROCESSING AND USE - The invention relates to a method for the final product-related manufacture of low-molecular, medium-molecular, and high-molecular halogenated polysilanes, the distillation thereof into selected fractions, the direct deposition of silicon from the gas phase or a liquid phase of polysilane mixtures or polysilanes, the hydrogenation or derivation of halogenated polysilanes, and the processing into final products in an adequate system. | 07-02-2009 |
20110150740 | Halogenated Polysilane and Plasma-Chemical Process for Producing the Same - The present invention relates to a halogenated polysilane as a pure compound or a mixture of compounds each having at least one direct Si—Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in the composition of which the atomic ratio of substituent to silicon is at least 1:1. | 06-23-2011 |
20110284796 | Halogenated Polysilane and Thermal Process for Producing the Same - The present invention relates to a halogenated polysilane as a pure compound or mixture of compounds each having at least one direct Si—Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in whose composition the atomic ratio substituent:silicon is greater than 1:1. | 11-24-2011 |
20110305619 | Silicon Containing Halogenide, Method for Producing the Same, and Use of the Same - The invention relates to silicon containing halogenide obtained by thermal disintegration of halogenized polysilane, and a method for producing the silicon. The silicon has a halogenide content of 1 at %-50 at %. The invention further relates to the use of the silicon containing halogenide for purifying metallurgical silicon. | 12-15-2011 |
20110305620 | Method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group - The invention relates to a method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group, wherein the halogenated oligomers and/or halogenated polymers are synthesized from a first chain-forming agent and a second chain-forming agent in a plasma-chemical reaction. At least one of the two chain-forming agents is a halogen compound of an element of the third to fifth main group. | 12-15-2011 |
20120202054 | BODIES COATED BY SiC AND METHOD FOR CREATING SiC-COATED BODIES - Bodies coated with a SiC layer or with a multilayer coating system that include at least a SiC hard material layer, wherein the SiC layer consists of halogen-containing nanocrystalline 3C-SiC or a mixed layer which consists of halogen-containing nanocrystalline 3C-SiC and amorphous SiC or halogen-containing nanocrystalline 3C-SiC and amorphous carbon. | 08-09-2012 |
20120308464 | METHOD AND DEVICE FOR PRODUCING SHORT-CHAIN HALOGENATED POLYSILANES - A method and a device produce short-chain halogenated polysilanes and/or short-chain halogenated polysilanes and halide-containing silicon by thermolytic decomposition of long-chain halogenated polysilanes. The thermolytic decomposition of long-chain halogenated polysilanes diluted with low-molecular halosilanes is carried out under an atmosphere of halosilanes, thereby ensuring the production of such products at industrial scale in a simple and cost-effective manner. | 12-06-2012 |
20120313037 | CHLORIDE-CONTAINING SILICON - A chlorinated polysilane has the formula SiClx wherein x=0.01−0.8 and which can be produced by thermolysis of a chloropolysilane at a temperature below 600° C. | 12-13-2012 |
20120315392 | METHOD FOR PRODUCING HYDROGENATED POLYGERMASILANE AND HYDROGENATED POLYGERMASILANE - A process for preparing hydrogenated polygermasilane as a pure compound or mixture of compounds includes hydrogenating halogenated polygermasilane. | 12-13-2012 |
20120321540 | METHOD FOR PRODUCING OLIGOSILANES - A method for producing oligosilanes by reacting halogenated oligosilanes with a metal hydride includes a reaction occurring in the presence of a catalyst and an alkali metal halide, the catalyst including a halide of a multivalent metal; and the reaction occurs in an ethereal solution. | 12-20-2012 |
20130001467 | KINETICALLY STABLE CHLORINATED POLYSILANES AND PRODUCTION AND USE THEREOF - Kinetically stable halogenated polysilanes include mixture of compounds having respectively at least four silicon atoms bound together, the substituents thereof comprising chlorine, and chlorine and hydrogen, and in the composition thereof, the atomic ratio of substituent to silicon is at least 1:1, wherein a) the kinetically stable halogenated polysilanes have a kinetically high stability in relation to oxidative-splitting by chlorine, and the degree of conversion at temperatures of 120° C. within 10 hours with an excess of chlorine gas at 1013 hPa does not exceed 30 mol %, and b) the kinetically stable halogenated polysilanes have a percentage of branching points in the polysilane molecules of more than 8 mol %. | 01-03-2013 |
20130004666 | METHOD FOR PRODUCING HYDROGENATED POLYGERMANE AND HYDROGENATED POLYGERMANE - A process for preparing hydrogenated polygermane as a pure compound or mixture of compounds, including hydrogenating halogenated polygermane. | 01-03-2013 |
20130017138 | METHOD FOR PRODUCING HEXACHLORODISILANEAANM Auner; NorbertAACI GlashuettenAACO DEAAGP Auner; Norbert Glashuetten DEAANM Bauch; ChristianAACI MuldensteinAACO DEAAGP Bauch; Christian Muldenstein DEAANM Holl; SvenAACI GueckingenAACO DEAAGP Holl; Sven Gueckingen DEAANM Deltschew; RumenAACI LeipzigAACO DEAAGP Deltschew; Rumen Leipzig DEAANM Mohsseni; JavadAACI Bitterfeld-WolfenAACO DEAAGP Mohsseni; Javad Bitterfeld-Wolfen DEAANM Lippold; GerdAACI LeipzigAACO DEAAGP Lippold; Gerd Leipzig DEAANM Gebel; ThoralfAACI DresdenAACO DEAAGP Gebel; Thoralf Dresden DE - A method produces hexachlorodisilane. Hexachlorodisilane is obtained by oxidative splitting of the chlorinated polysilane of the empirical formula SiClx (x=0,2-0,8) using chlorine gas. The hexachlorodisilane is selectively obtained with a high yield. | 01-17-2013 |
20130039830 | METHOD FOR REMOVING IMPURITIES FROM SILICON - A method for removing impurities from silicon includes A) providing metallic silicon having impurities, B) mixing the metallic silicon with at least one halogenated polysilane of Formula SiX | 02-14-2013 |
20130043429 | CHLORINATED OLIGOGERMANES AND METHOD FOR THE PRODUCTION THEREOF - A chlorinated oligogermane as a pure compound or mixture of compounds which each have at least one direct Ge—Ge bond, substituents of which include chlorine or chlorine and hydrogen and atom ratio for substituent:germanium is at least 2:1 in the composition thereof, wherein a) the mixture has on average a Ge:Cl ratio of 1:1 to 1:3, or the pure compound has a Ge:Cl ratio of 1:2 to 1:2.67, and b) the mixture has an average number of germanium atoms of 2 to 8. | 02-21-2013 |
20130171052 | Process for Removing Nonmetallic Impurities from Metallurgical Silicon - The invention describes a process for removing nonmetallic impurities from metallurgical silicon. A melt is produced from metallurgical silicon and halide-containing silicon. As a result, the impurities are sublimed out and removed from the melt in the form of nonmetal halides. Compared with the known process, in which gaseous halogen is blown through an Si melt, the novel process can be carried out in a particularly simple and efficient manner. | 07-04-2013 |
20130214243 | NANOWIRES MADE OF NOVEL PRECURSORS AND METHOD FOR THE PRODUCTION THEREOF - The invention relates to nanowires which consist of or comprise semiconductor materials and are used for applications in photovoltaics and electronics and to a method for the production thereof. The nanowires are characterized in that they are obtained by a novel method using novel precursors. The precursors represent compounds, or mixtures of compounds, each having at least one direct Si—Si and/or Ge—Si and/or Ge—Ge bond, the substituents of which consist of halogen and/or hydrogen, and in the composition of which the atomic ratio of substituent:metalloid atoms is at least 1:1. | 08-22-2013 |
20130266505 | HYDROGEN GENERATION BY HYDROGENATED POLYSILANES FOR OPERATING FUEL CELLS - A fuel cell supply device that generates hydrogen for fuel cells in an aircraft includes a reaction chamber which reacts hydrogenated polysilanes or mixtures thereof with water; a feed device that feeds at least one reactant into the reaction chamber; and a discharge device that leads hydrogen formed in the reaction to a fuel cell. | 10-10-2013 |
Patent application number | Description | Published |
20090119057 | METHOD AND DEVICE FOR INVESTIGATION OF PHASE TRANSFORMATIONS IN METALS AND ALLOYS - A device and method for investigating phase transformation properties and structural changes of materials. In one form, the device simulates actual thermal processing conditions, while the method can be used in both simulations as well as in actual processing conditions. An analysis using at least one of the device and method is referred to as a single sensor differential thermal analysis, as it compares the temperature recorded in a measured specimen against a reference thermal history without requiring the derivation of the reference thermal history from measured reference temperatures. | 05-07-2009 |
20110000953 | LOW-TEMPERATURE SPOT IMPACT WELDING DRIVEN WITHOUT CONTACT - A laser, aimed at a flyer plate tab, causes optical energy to be directed at the tab, specifically, at a top surface thereof. Energy impacting the tab accelerates the tab out of an initial bent position, straightening it into an impact with a target sheet. The impact occurs in excess of 100 m/s, resulting in a metallurgical bond between the tab and the target sheet. The laser preferably strikes the top surface in a normal direction, based upon an initial angularity of the tab relative to the target. The laser emission, preferably in the range of 1 to 100 Joules delivered in a microsecond, may be augmented by an ablative layer on the top surface or a transparent covering on the top surface that reacts against the expanding gas from ablative activity on the top surface. The weld is formed without physical contact between the welding device and the tab. | 01-06-2011 |
20120103949 | LASER-INDUCED METALLURGICAL BONDING DRIVEN WITHOUT CONTACT - A laser, aimed at a flyer plate tab, causes optical energy to be directed at the tab, specifically, at a top surface thereof. Energy impacting the tab accelerates the tab into an impact with a target sheet in a time on the order of about 10 | 05-03-2012 |