Patent application number | Description | Published |
20080290472 | SEMICONDUCTOR INTERLAYER-INSULATING FILM FORMING COMPOSITION, PREPARATION METHOD THEREOF, FILM FORMING METHOD, AND SEMICONDUCTOR DEVICE - Provided is a porous-film-forming composition containing silicon-oxide-based fine particles and a polysiloxane compound obtained by hydrolysis and condensation reactions, in the presence of an acid catalyst, of a hydrolyzable silane compound containing at least one tetrafunctional alkoxysilane compound represented by the following formula (1): | 11-27-2008 |
20080290521 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE - In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR | 11-27-2008 |
20080292863 | SILOXANE POLYMER, PREPARATION METHOD THEREOF, POROUS-FILM FORMING COATING SOLUTION CONTAINING THE POLYMER, POROUS FILM, AND SEMICONDUCTOR DEVICE USING THE POROUS FILM - Provided is a method for preparing a siloxane polymer by hydrolysis and condensation reactions of a hydrolyzable silane compound, which has a step of preparing a salt of a silsesquioxane cage compound represented by the following formula (1): | 11-27-2008 |
20100040893 | SUBSTRATE JOINING METHOD AND 3-D SEMICONDUCTOR DEVICE - A pair of substrates each having a bonding surface are joined together by interposing a bond layer precursor coating between the bonding surfaces of the substrates and heating the precursor coating to form a bond layer. Prior to the joining step, the substrate on the bonding surface is provided with a gas-permeable layer. Even when a material which will evolve a noticeable volume of gas upon heat curing is used as the precursor coating, substrates can be joined via a robust bond without the peeling problem by gas evolution. | 02-18-2010 |
20100040895 | HIGH-TEMPERATURE BONDING COMPOSITION, SUBSTRATE BONDING METHOD, AND 3-D SEMICONDUCTOR DEVICE - A high-temperature bonding composition comprising a silicon base polymer as a thermosetting binder is provided. The silicon base polymer is obtained from dehydrolytic condensation of a condensate precursor comprising a silane compound having at least one pair of silicon atoms tied by a crosslink composed of an aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group, and having at least three hydroxyl and/or hydrolyzable groups. Those silicon atoms having a direct bond to the crosslink composed of the aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group are present in a proportion of at least 90 mol % relative to all silicon atoms in the polymer. | 02-18-2010 |
20100283133 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE - In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR | 11-11-2010 |
20120207917 | CONDUCTIVE PATTERN-FORMING COMPOSITION AND METHOD - A conductive pattern-forming composition is obtained by loading a silicone rubber composition comprising a curable organopolysiloxane and a curing agent with conductive submicron particles. | 08-16-2012 |
Patent application number | Description | Published |
20090294726 | ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE - Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T/Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms. | 12-03-2009 |
20090294922 | ORGANIC SILICON OXIDE FINE PARTICLE AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE - Provided is an organic silicon oxide fine particle capable of satisfying an expected dielectric constant and mechanical strength and having excellent chemical stability for obtaining a high-performance porous insulating film. More specifically, provided is an organic silicon oxide fine particle comprising a core comprising an inorganic silicon oxide or a first organic silicon oxide containing an organic group having a carbon atom directly attached to a silicon atom and, and a shell on or above an outer circumference of the core, the shell comprising a second organic silicon oxide different from the first organic silicon oxide which the second organic silicon has been formed by hydrolysis and condensation, in the presence of a basic catalyst, of a shell-forming component comprising an organic-group-containing hydrolyzable silane containing an organic group having a carbon atom directly attached to a silicon atom or a mixture of the organic-group-containing hydrolyzable silane and an organic-group-free hydrolyzable silane not having the organic group, wherein a ratio [C]/[Si] is 0 or greater but less than 1 in the core and 1 or greater 1 in the shell wherein [C] represents the number of all the carbon atoms and [Si] represents the number of all the silicon atoms. | 12-03-2009 |
20100233482 | Organic silicon oxide fine particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device - Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T/Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms. | 09-16-2010 |