Morino, Hyogo
Hajime Morino, Hyogo JP
Patent application number | Description | Published |
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20090014277 | Bill Discriminating and Counting Apparatus - According to the present invention, pieces of data of states of sensors and actuators in a bill discriminating and counting apparatus are stored in a ring memory at constant time intervals, among these stored data, both the data involved in an error are associated with the error events and stored in a non-volatile memory or a hard disk when the error is occurred in the bill discriminating and counting apparatus, and then the data is read from the non-volatile memory or hard disk to analyze the error. Specifically, digital port input and output information (states of sensors and actuators), analog sensor voltage, and analog motor current value are stored in a memory at constant time intervals since the power is turned on or the counting is started, and the stored port information and voltage are stored in the non-volatile memory or the like along with contents of abnormality when the abnormality is occurred. | 01-15-2009 |
20090028285 | Bill discriminating and counting apparatus - The present invention relates to a bill discriminating and counting apparatus including a display section which can perform display written in plural languages. The bill discriminating and counting apparatus includes a second storage area in which display data of a mother language can be written in addition to a first storage area in which data for the display written in commonly-used English is stored, and the display written in the mother language can be performed by writing the display data written in the mother language in the second storage area in the country where the bill discriminating and counting apparatus is used. | 01-29-2009 |
20090090660 | BILL DISCRIMINATING AND COUNTING APPARATUS - The present invention relates to a bill discriminating and counting apparatus having a function of handling bills of a plurality of currency systems with one machine. That is to say, by providing a plurality of START/STOP keys for starting discriminating and counting of the bills, and by assigning the bills of different currency systems to each of them, the bills of a plurality of currency systems may be handled only by operating the START/STOP key corresponding to the currency system, without performing selection and setting of the currency system each time. | 04-09-2009 |
20120011813 | BANKNOTE SORTING AND BUNDLING APPARATUS AND BANKNOTE SORTING AND STACKING METHOD - A banknote sorting and bundling apparatus ( | 01-19-2012 |
Hirofumi Morino, Hyogo JP
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20100062074 | ALLERGEN INACTIVATING AGENT - An allergen inactivating agent for preventing allergic manifestations or alleviating symptoms by reducing antigenicity of an allergen through contact with the allergen includes dissolved chlorine dioxide as an active ingredient. | 03-11-2010 |
Keiji Morino, Hyogo JP
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20140342475 | SEMICONDUCTOR TEST METHOD AND SEMICONDUCTOR TEST APPARATUS - A semiconductor test method includes attaching a sheet to a wafer on which a plurality of chips are formed, the sheet having a plurality of holes, each of which corresponds to a position of one of the chips, dicing the wafer to separate the plurality of chips into individual chips while the sheet remains attached to the individual chips, and after the dicing and while the sheet remains attached to the individual chips, measuring the electrical characteristics of the chips. | 11-20-2014 |
Yasuki Morino, Hyogo JP
Patent application number | Description | Published |
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20080290453 | Semiconductor device and method of fabrication thereof - A method includes the steps of: introducing insulation film into a trench to provide a trench isolation; planarizing the trench isolation to expose a passivation film; and removing the passivation film and depositing a second silicon layer on a first silicon layer and the trench isolation; and in the step of depositing the first silicon layer the first silicon layer is an undoped silicon layer and in the step of depositing the second silicon layer the second silicon layer is a doped silicon layer or an undoped silicon layer subsequently having an impurity introduced thereinto or the like and thermally diffused through subsequent thermal hysteresis into the first silicon layer. | 11-27-2008 |
20100099234 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF - A method includes the steps of: introducing insulation film into a trench to provide a trench isolation; planarizing the trench isolation to expose a passivation film; and removing the passivation film and depositing a second silicon layer on a first silicon layer and the trench isolation; and in the step of depositing the first silicon layer the first silicon layer is an undoped silicon layer and in the step of depositing the second silicon layer the second silicon layer is a doped silicon layer or an undoped silicon layer subsequently having an impurity introduced thereinto or the like and thermally diffused through subsequent thermal hysteresis into the first silicon layer. | 04-22-2010 |
20110045651 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF - A method includes the steps of: introducing insulation film into a trench to provide a trench isolation; planarizing the trench isolation to expose a passivation film; and removing the passivation film and depositing a second silicon layer on a first silicon layer and the trench isolation; and in the step of depositing the first silicon layer the first silicon layer is an undoped silicon layer and in the step of depositing the second silicon layer the second silicon layer is a doped silicon layer or an undoped silicon layer subsequently having an impurity introduced thereinto or the like and thermally diffused through subsequent thermal hysteresis into the first silicon layer. | 02-24-2011 |