Patent application number | Description | Published |
20140255851 | Photoresist Defect Reduction System and Method - A system and method for reducing defects in photoresist processing is provided. An embodiment comprises cleaning the photoresist after development using an alkaline environment. The alkaline environment may comprise a neutral solvent and an alkaline developer. The alkaline environment will modify the attraction between residue leftover from development and a surface of the photoresist such that the surfaces repel each other, making the removal of the residue easier. By removing more residue, there will be fewer defects in the photolithographic process. | 09-11-2014 |
20140263053 | Filter System and Method - A system and method for treating a filter is provided. In an embodiment the filter is treated by pre-rinsing the filter membrane with a buffer solvent. The buffer solvent can be used to reduce or eliminate energy differences between the surface of the filter membrane and the process liquid which is being filtered. The pre-rinse may be performed prior to shipment or, alternatively, may be performed after shipment of the filter to a customer. | 09-18-2014 |
20140264766 | System and Method for Film Stress Release - Disclosed herein is a method of forming a stress relieved film stack, the method comprising forming a film stack on a first side of a substrate, the film stack comprising a plurality of film layers and creating a plurality of film stack openings according to a cutting pattern and along at least a portion of a buffer region. The plurality of film stack openings extend from a top surface of the film stack to the substrate. A deflection of the substrate may be determined, and the cutting pattern selected prior to creating the film stack openings based on the deflection of the substrate. The substrate may have a deflection of less than about 2 μm after the creating the plurality of film stack openings. And at least one of the plurality of film layers may comprise one of titanium nitride, silicon carbide and silicon dioxide. | 09-18-2014 |
20140272724 | Photoresist System and Method - A system and method for photoresists is provided. In an embodiment a photoresist is developed. Once developed, the photoresist is slimmed using either a direct slimming technique or an indirect slimming technique. In a direct slimming technique the slimming agent is either an alkaline solution or a polar solvent. In the indirect slimming technique a hydrophobic material is diffused into the photoresist to form a modified region and the modified region is then removed. | 09-18-2014 |
20140273457 | Anti-Reflective Layer and Method - A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating component in order to form a floating region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating component may be a floating cross-linking agent, a floating polymer resin, or a floating catalyst. The floating cross-linking agent, the floating polymer resin, or the floating catalyst may comprise a fluorine atom. | 09-18-2014 |
20140273509 | Method and Apparatus for Planarization of Substrate Coatings - Disclosed herein is a method of forming a coating, comprising applying a first coating to a substrate having a plurality of topographical features, planarizing a top surface of the first coating, and drying the coating after planarizing the top surface of the first coating. The first coating may be applied over the plurality of topographical features, and substantially liquid during application. The first coating may optionally be a conformal coating over topographical features of the substrate. The conformal coating may be dried prior to planarizing the top surface of the first coating and a solvent applied to the conformal coating, with the top surface of the conformal coating being substantially planar after application of the solvent. The coating may have a planar surface prior to the drying the first coating and the first coating may be dried without substantial spin-drying by modifying an environment of the first coating. | 09-18-2014 |
20150227051 | Photoresist Defect Reduction System and Method - A system and method for reducing defects in photoresist processing is provided. An embodiment comprises cleaning the photoresist after development using an alkaline environment. The alkaline environment may comprise a neutral solvent and an alkaline developer. The alkaline environment will modify the attraction between residue leftover from development and a surface of the photoresist such that the surfaces repel each other, making the removal of the residue easier. By removing more residue, there will be fewer defects in the photolithographic process. | 08-13-2015 |