Patent application number | Description | Published |
20080290417 | ELECTRONIC COMPONENT COMPRISING A TITANIUM CARBONITRIDE (TiCN) BARRIER LAYER AND PROCESS OF MAKING THE SAME - An electronic component comprising several superimposed layers of materials including a TiCN barrier layer. A process for depositing a TiCN layer in order to obtain an electronic component, where a titanium precursor is chosen from among tetrakis (dimethylamido) titanium and/or tetrakis (diethylamido) titanium and is decomposed on a substrate by plasma-enhanced atomic layer deposition (PEALD) where the plasma is obtained with a hydrogen-rich gas which can contain nitrogen with at most 5 atomic % nitrogen and at least 95 atomic % hydrogen. | 11-27-2008 |
20090008531 | Integrated electrooptic system - An integrated circuit includes at least one photosensitive element capable of delivering an electrical signal when light of at least one wavelength of the visible spectrum reaches it, and an electrooptic system functioning as an electrochemical shutter. The electrooptic system is located in the path of at least one light ray capable of reaching the photosensitive element and possesses at least one optical property, dependent on electrochemical reaction, that can be modified by an electrical control signal. The optical property is preferably transmission. | 01-08-2009 |
20100108867 | INTEGRATED ELECTROOPTIC SYSTEM - An integrated circuit includes at least one photosensitive element capable of delivering an electrical signal when light of at least one wavelength of the visible spectrum reaches it, and an electrooptic system functioning as an electrochemical shutter. The electrooptic system is located in the path of at least one light ray capable of reaching the photosensitive element and possesses at least one optical property, dependent on electrochemical reaction, that can be modified by an electrical control signal. The optical property is preferably transmission. | 05-06-2010 |
20100133634 | PRODUCTION OF A SELF-ALIGNED CUSIN BARRIER - A semiconductor product includes a portion made of copper, a portion made of a dielectric and a self-aligned barrier between the copper portion and the dielectric portion. The self-aligned barrier includes a first copper silicide layer comprising predominantly first copper silicide molecules, and a second copper silicide layer comprising predominantly second copper silicide molecules. The proportion of the number of silicon atoms is higher in the second silicide molecules than in the first silicide molecules. The second copper silicide layer is positioned between the copper portion and the first copper silicide layer. A nitride layer may overlie at least part of the first copper silicide layer. | 06-03-2010 |
20100155950 | IMPLEMENTATION OF A METAL BARRIER IN AN INTEGRATED ELECTRONIC CIRCUIT - A metal barrier is realized on top of a metal portion of a semiconductor product, by forming a metal layer on the surface of the metal portion, with this metal layer comprising a cobalt-based metal material. Then, after an optional deoxidation step, a silicidation step and a nitridation step of the cobalt-based metal material of the metal layer are performed. The antidiffusion properties of copper atoms (for example) and the antioxidation properties of the metal barrier are improved. | 06-24-2010 |
20130001708 | TRANSISTORS HAVING A GATE COMPRISING A TITANIUM NITRIDE LAYER AND METHOD FOR DEPOSITING THIS LAYER - A MOS transistor having a gate insulator including a dielectric of high permittivity and a conductive layer including a TiN layer, wherein the nitrogen composition in the TiN layer is sub-stoichiometric in its lower portion and progressively increases to a stoichiometric composition in its upper portion. | 01-03-2013 |
20140097504 | METHOD FOR DEPOSITING A LOW-DIFFUSION TIALN LAYER AND INSULATED GATE COMPRISING SUCH A LAYER - A method for forming an aluminum titanium nitride layer on a wafer by plasma-enhanced physical vapor deposition including a first step at a radio frequency power ranging between 100 and 500 W only, and a second step at a radio frequency power ranging between 500 and 1,000 W superimposed to a D.C. power ranging between 500 and 1,000 W. An insulated gate comprising such an aluminum titanium nitride layer. | 04-10-2014 |
20140319616 | METHOD FOR PRODUCING A METAL-GATE MOS TRANSISTOR, IN PARTICULAR A PMOS TRANSISTOR, AND CORRESPONDING INTEGRATED CIRCUIT - At least one MOS transistor is produced by forming a dielectric region above a substrate and forming a gate over the dielectric region. The gate is formed to include a metal gate region. Formation of the metal gate region includes: forming a layer of a first material configured to reduce an absolute value of a threshold voltage of the transistor, and configuring a part of the metal gate region so as also to form a diffusion barrier above the layer of the first material. Then, doped source and drain regions are formed using a dopant activation anneal. | 10-30-2014 |
20150200099 | TRANSISTOR HAVING A GATE COMPRISING A TITANIUM NITRIDE LAYER AND METHOD FOR DEPOSITING THIS LAYER - A MOS transistor having a gate insulator including a dielectric of high permittivity and a conductive layer including a TiN layer, wherein the nitrogen composition in the TiN layer is sub-stoichiometric in its lower portion and progressively increases to a stoichiometric composition in its upper portion. | 07-16-2015 |