Saxler
Adam Saxler, Durham, NC US
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20080290371 | SEMICONDUCTOR DEVICES INCLUDING IMPLANTED REGIONS AND PROTECTIVE LAYERS - A semiconductor structure includes a Group III-nitride semiconductor layer, a protective layer on the semiconductor layer, a distribution of implanted dopants within the semiconductor layer, and an ohmic contact extending through the protective layer to the semiconductor layer. | 11-27-2008 |
Adam William Saxler, Cary, NC US
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20130221327 | THICK NITRIDE SEMICONDUCTOR STRUCTURES WITH INTERLAYER STRUCTURES AND METHODS OF FABRICATING THICK NITRIDE SEMICONDUCTOR STRUCTURES - A semiconductor structure includes a substrate, a nucleation layer on the substrate, a compositionally graded layer on the nucleation layer, and a layer of a nitride semiconductor material on the compositionally graded layer. The layer of nitride semiconductor material includes a plurality of substantially relaxed nitride interlayers spaced apart within the layer of nitride semiconductor material. The substantially relaxed nitride interlayers include aluminum and gallium and are conductively doped with an n-type dopant, and the layer of nitride semiconductor material including the plurality of nitride interlayers has a total thickness of at least about 2.0 μm. | 08-29-2013 |
20130270514 | LOW RESISTANCE BIDIRECTIONAL JUNCTIONS IN WIDE BANDGAP SEMICONDUCTOR MATERIALS - A light emitting diode device includes a first diode structure, a second diode structure on the first diode structure, and a conductive junction between the first diode structure and the second diode structure. The conductive junction includes a transparent conductive layer between the first diode structure and the second diode structure. Low resistance heterojunction tunnel junction structures including delta-doped layers are also disclosed. | 10-17-2013 |
Adam William Saxler, Boise, ID US
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20130344687 | Methods of Fabricating Thick Semi-Insulating or Insulating Epitaxial Gallium Nitride Layers - Semiconductor device structures and methods of fabricating semiconductor devices structures are provided that include a semi-insulating or insulating GaN epitaxial layer on a conductive semiconductor substrate and/or a conductive layer. The semi-insulating or insulating GaN epitaxial layer has a thickness of at least about 4 μm. GaN semiconductor device structures and methods of fabricating GaN semiconductor device structures are also provided that include an electrically conductive SiC substrate and an insulating or semi-insulating GaN epitaxial layer on the conductive SiC substrate. The GaN epitaxial layer has a thickness of at least about 4 μm. GaN semiconductor device structures and methods of fabricating GaN semiconductor device structures are also provided that include an electrically conductive GaN substrate, an insulating or semi-insulating GaN epitaxial layer on the conductive GaN substrate, a GaN based semiconductor device on the GaN epitaxial layer and a via hole and corresponding via metal in the via hole that extends through layers of the GaN based semiconductor device and the GaN epitaxial layer. | 12-26-2013 |
Wilfried Saxler, Bruehl DE
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20120089165 | SCALPEL, IN PARTICULAR FOR OPHTHALMOLOGIC APPLICATIONS - A scalpel, in particular for ophthalmologic applications, comprising a handle head and a blade, wherein the blade, which includes a blade shank and a blade face, is inserted into a handle head of the handle, and at least one cutting edge is formed on the blade face, wherein the blade shank is configured together with the blade face as a body on which a continuous smooth rear surface is formed, whereby the front of the body opposite from the rear surface forms a cylindrical surface in the area of the blade shank and forms the top of the blade in the area of the blade face, and the end of the handle head has two surfaces that are slanted with respect to each other and that abut, like a roof edge, in an edge that is perpendicular to the axis of the handle, and whereby, in a first of the slanted surfaces, there is an opening for inserting the blade, whereby the inserted blade comes to lie in the opening in such a way that the smooth rear surface is flush with the first slanted surface. | 04-12-2012 |