Patent application number | Description | Published |
20090014795 | Substrate for field effect transistor, field effect transistor and method for production thereof - A π gate FinFET structure having reduced variations in off-current and parasitic capacitance and a method for production thereof are provided. The structure of an element is improved so that an off-current suppressing capability can be exhibited more strongly. A field effect transistor, wherein a first insulating film and a semiconductor region are provided so as to protrude upward with respect to the flat surface of a base, the field effect transistor has a gate electrode, a gate insulating film and a source/drain region, and a channel is formed at least on the side surface of the semiconductor region, wherein that the first insulating film is provided on an etch stopper layer composed of a material having an etching rate lower than at least the lowermost layer of the first insulating film for etching under a predetermined condition. | 01-15-2009 |
20090134454 | Fin-type field effect transistor, semiconductor device and manufacturing process therefor - A constant distance can be maintained between source/drain regions without providing a gate side wall by forming a gate electrode comprising an eaves structure, and a uniform dopant concentration is kept within a semiconductor by ion implantation. As a result, a FinFET excellent in element properties and operation properties can be obtained. A field effect transistor, wherein a gate structure body is a protrusion that protrudes toward source and drain regions sides in a channel length direction and has a channel length direction width larger than that of the part adjacent to the insulating film in a gate electrode, and the protrusion comprises an eaves structure formed by the protrusion that extends in a gate electrode extending direction on the top surface of the semiconductor layer. | 05-28-2009 |
20110059584 | MANUFACTURING PROCESS OF FIN-TYPE FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR - A constant distance can be maintained between source/drain regions without providing a gate side wall by forming a gate electrode including an eaves structure, and a uniform dopant concentration is kept within a semiconductor by ion implantation. As a result, a FinFET excellent in element properties and operation properties can be obtained. A field effect transistor, wherein a gate structure body is a protrusion that protrudes toward source and drain regions sides in a channel length direction and has a channel length direction width larger than that of the part adjacent to the insulating film in a gate electrode, and the protrusion includes an eaves structure formed by the protrusion that extends in a gate electrode extending direction on the top surface of the semiconductor layer. | 03-10-2011 |
20110097897 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device, including: forming a barrier seed Ti layer covering a recess in an insulating film; forming a first barrier TiN layer by sputtering; forming a second barrier TiN layer by sputtering with a substrate bias power higher than that in forming the first barrier TiN layer; forming a first wiring seed Ti layer by sputtering; forming a second wiring seed Ti layer by sputtering with a substrate bias power higher than that in forming the first wiring seed Ti layer; forming a first wiring seed Al layer by sputtering; forming a second wiring seed Al layer by sputtering with a substrate bias power higher than that in forming the first wiring seed Al layer; forming Ti—Al alloy in the recess by a heating; and forming an Al wiring material layer so as to fill the recess therewith by sputtering and heating. | 04-28-2011 |
20120302058 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device comprises forming a contact hole within an interlayer insulating film of a substrate and forming a contact plug while the substrate is heated. In forming the contact plug, the substrate is held on a stage within the chamber of a sputtering apparatus through a chuck, and an ESC voltage applied to the chuck is increased stepwise in a plurality of steps. First target power is applied to a target within the chamber to form a first Al film in the contact hole. Next, second target power higher than the first target power is applied to the target within the chamber to form a second Al film on the first Al film. | 11-29-2012 |
20130154096 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a manufacturing method of a barrier layer, a via hole is formed in an insulating layer that covers a conductive layer over a substrate, and then the barrier layer is formed in the via hole. The barrier layer is provided by forming a second titanium nitride film after forming a first titanium nitride film. The second titanium nitride film is formed using a method having a weak anisotropy than the first titanium nitride film. | 06-20-2013 |
20140001030 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | 01-02-2014 |
Patent application number | Description | Published |
20080289756 | Manufacturing method for variable shape mirror - A manufacturing method for variable shape mirrors suitable for mass production includes steps: for overlaying a pair of jigs having protruding bar portions like comb teeth on a support substrate so that the protruding bar portions are orthogonal to each other, and inserting support pillars and piezoelectric elements into through hole portions that are formed by gaps between the protruding bar portions, and placing a mirror substrate on the support pillars and the piezoelectric elements; for bonding at least the support substrate and the support pillars, the support substrate and the piezoelectric elements, and the mirror substrate and the support pillars to each other, respectively; for drawing out the jig in the direction opposite to a protruding direction of the protruding bar portion; and for forming a reflection film on an outer surface of the mirror substrate. | 11-27-2008 |
20080291559 | Variable shape mirror and manufacturing method for variable shape mirror - A variable shape mirror includes a support substrate provided with a conductive bonding portion that is divided into two areas bonded to a lamination type piezoelectric actuator. A bonding surface of the piezoelectric actuator is provided with a first metal film that is divided into a first area and a second area that are not connected to each other electrically. Side faces of the piezoelectric actuator are provided with a second metal film that connects a first common electrode to the first area electrically or connects a second common electrode to the second area electrically. The piezoelectric actuator is disposed on the bonding portion so that the individual areas of the first metal film are connected electrically to the different areas of the bonding portion, respectively. | 11-27-2008 |
20090015952 | Variable-shape mirror and optical pickup device therewith - In a variable-shape mirror provided with a support base, a mirror portion that is disposed to face the support base and that has, on a side thereof facing away from the support base, a mirror surface which is irradiated with a light beam, and piezoelectric elements that are sandwiched between the support base and the mirror portion and that vary the shape of the mirror surface, the piezoelectric elements are bonded, by means of a thin layer of metal, to at least one of the support base and the mirror portion by the application of heat and pressure. | 01-15-2009 |