Patent application number | Description | Published |
20100127545 | Double Folding Seat for Vehicle - A double folding seat for a vehicle may include a stationary bracket, coupled to the seatback frame and to the cushion frame, wherein the recliner bracket is coupled to the one end of the stationary bracket, a link unit elastically installed on the stationary bracket and configured to be selectively coupled to the recliner bracket and transmit a rotating force of the recliner bracket to a latch cam installed to the cushion frame, a stopper fixedly installed on the leg assembly which is connected to a vehicle body, a hinge member rotatably mounted on the cushion frame and rotated by the stopper, and an actuating wire connecting the hinge member and the link unit and displacing the link unit by a rotation force of the hinge member to a position where the link unit cooperates with the recliner bracket when the cushion frame moves backwards to the final position thereof. | 05-27-2010 |
20110127817 | LUMBAR SUPPORTING DEVICE FOR VEHICLE - A lumbar supporting device for a vehicle, may include an actuator, a lumbar plate slidably mounted to a seat back frame of the vehicle, and having a lumbar support part, wherein the lumbar support part is formed between upper and lower ends of the lumbar plate, and a driving unit coupled to the actuator and pulling both upper and lower portions of the lumbar plate together towards the lumbar support part, using power transmitted from the actuator. | 06-02-2011 |
Patent application number | Description | Published |
20080289576 | Plasma based ion implantation system - A plasma based ion implantation system capable of generating a capacitively coupled plasma having beneficial characteristics for an ion implantation, including the generation of necessary ions and radicals only for an ion implantation process instead of generating an inductively coupled plasma, which generates unnecessary ions and excessively dissociates radicals. The plasma based ion implantation system easily controls plasma ions implanted by cleaning a vacuum chamber, minimizes problems of unnecessary deposition and occurrence of contaminants and increases the number of components used only for the plasma ion implantion by reducing the deposition of polymer layer on a workpiece. The plasma based ion implantation system easily control uniformity of the plasma by using a flat type electrode, thereby easily ensuring uniformity of plasma ions implanted into the workpiece. | 11-27-2008 |
20120000610 | Microwave Plasma Processing Apparatus - In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to perform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring. | 01-05-2012 |
20130164919 | METHODS OF FABRICATING SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING GATE INSULATING LAYERS - A method of fabricating a semiconductor device may include forming active and field regions in a substrate; forming a gate trench in which the active and field regions are exposed; forming a gate insulating layer on a surface of the exposed active region, wherein forming the gate insulating layer includes forming a first gate oxide layer by primarily oxidizing the surface of the active region, and forming a second gate oxide layer between the surface of the active region and the first gate oxide layer by secondarily oxidizing the surface of the active region; conformally forming a gate barrier layer on the gate insulating layer and the exposed field region; forming a gate electrode layer on the gate barrier layer; and forming a gate capping layer in contact with the gate insulating layer, the gate barrier layer, and the gate electrode layer in the gate trench. | 06-27-2013 |
20130171801 | SEMICONDUCTOR DEVICES HAVING NITRIDED GATE INSULATING LAYER AND METHODS OF FABRICATING THE SAME - Semiconductor devices, and methods of fabricating the same, include forming device isolation regions in a substrate to define active regions, forming gate trenches in the substrate to expose the active regions and device isolation regions, conformally forming a preliminary gate insulating layer including silicon oxide on the active regions exposed in the grate trenches, nitriding the preliminary gate insulating layer using a radio-frequency bias having a frequency of about 13.56 MHz and power between about 100 W and about 300 W to form a nitrided preliminary gate insulating layer including silicon oxynitride, forming a gate electrode material layer on the nitride preliminary gate insulating layer, partially removing the nitrided preliminary gate insulating layer and the gate electrode material layer to respectively form a gate insulating layer and a gate electrode layer, and forming a gate capping layer on the gate electrode layer to fill the gate trenches. | 07-04-2013 |
20150162167 | MICROWAVE PLASMA PROCESSING APPARATUS - In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to peform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring. | 06-11-2015 |