Patent application number | Description | Published |
20080288196 | Correction of Delay-Based Metric Measurements Using Delay Circuits Having Differing Metric Sensitivities - Correction of delay-based metric measurements using delay circuits having differing metric sensitivities provides improved accuracy for environmental and other circuit metric measurements that used delay lines. A delay line measurement, which may be a one-shot measurement or a ring oscillator frequency measurement is performed either simultaneously or sequentially using at least two delay lines that have differing sensitivities to a particular metric under measurement. A correction circuit or algorithm uses the measured delays or ring oscillator frequencies and corrects at least one of the metric measurements determined from one of the delays or ring oscillator frequencies in conformity with the other delay or ring oscillator frequency. The delays may be inverter chains, with one chain having a higher sensitivity to supply voltage than the other delay chain, with the other delay chain having a higher sensitivity to temperature. Temperature results can then be corrected for supply voltage variation and vice-versa. | 11-20-2008 |
20080288197 | Calibration of Multi-Metric Sensitive Delay Measurement Circuits - A method and system for calibration of multi-metric sensitive delay measurement circuits provides for reduction of process-dependent variation in delays and their sensitivities to circuit metrics. A process corner for the delay circuit(s) is determined from at least one delay measurement for which the variation of delay due to process variation is previously characterized. The delay measurement(s) is made at a known temperature(s), power supply voltage(s) and known values of any other environmental metric which the delay circuit is designed to measure. Coefficients for delay versus circuit metrics are then determined from the established process corner, so that computation of circuit metric values from the delay measurements have improved accuracy and reduced variation due to the circuit-to-circuit and/or die-to-die process variation of the delay circuits. | 11-20-2008 |
20090144006 | CALIBRATION OF MULTI-METRIC SENSITIVE DELAY MEASUREMENT CIRCUITS - A method and system for calibration of multi-metric sensitive delay measurement circuits provides for reduction of process-dependent variation in delays and their sensitivities to circuit metrics. A process corner for the delay circuit(s) is determined from at least one delay measurement for which the variation of delay due to process variation is previously characterized. The delay measurement(s) is made at a known temperature(s), power supply voltage(s) and known values of any other environmental metric which the delay circuit is designed to measure. Coefficients for delay versus circuit metrics are then determined from the established process corner, so that computation of circuit metric values from the delay measurements have improved accuracy and reduced variation due to the circuit-to-circuit and/or die-to-die process variation of the delay circuits. | 06-04-2009 |
20090319202 | Delay-Based Bias Temperature Instability Recovery Measurements for Characterizing Stress Degradation and Recovery - A method, test circuit and test system provide measurements to accurately characterize threshold voltage changes due to negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI). Both the bias temperature instability recovery profile and/or the bias temperature shifts due to rapid repetitions of stress application can be studied. In order to provide accurate measurements when stresses are applied at intervals on the order of tens of nanoseconds while avoiding unwanted recovery, and/or to achieve recovery profile sampling resolutions in the nanosecond range, multiple delay or ring oscillator frequency measurements are made using a delay line that is formed from delay elements that have delay variation substantially caused only by NBTI or PBTI effects. Devices in the delay elements are stressed, and then the delay line/ring oscillator is operated to measure a threshold voltage change for one or more measurement periods on the order of nanoseconds. | 12-24-2009 |
20100271057 | Method for Qcrit Measurement in Bulk CMOS Using a Switched Capacitor Circuit - A test setup for estimating the critical charge of a circuit under test (CUT) uses a charge injection circuit having a switched capacitor that is selectively connected to a node of the CUT. A voltage measurement circuit measures the voltage at a tap in the charge injection circuit before and after the charge is injected. When the injected charge causes an upset in the logical state of the CUT, the critical charge is calculated as the product of the voltage difference and the known capacitance of the capacitor. In one embodiment, (NMOS drain strike simulation) the amount of charge injected is controlled by a variable pulse width generator gating the switch of the charge injection circuit. In another embodiment (PMOS drain strike simulation) the amount of charge injected is controlled by a variable voltage supply selectively connected to the charge storage node. | 10-28-2010 |
20110074394 | TEST CIRCUIT FOR BIAS TEMPERATURE INSTABILITY RECOVERY MEASUREMENTS - A method, test circuit and test system provide measurements to accurately characterize threshold voltage changes due to negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI). Both the bias temperature instability recovery profile and/or the bias temperature shifts due to rapid repetitions of stress application can be studied. In order to provide accurate measurements when stresses are applied at intervals on the order of tens of nanoseconds while avoiding unwanted recovery, and/or to achieve recovery profile sampling resolutions in the nanosecond range, multiple delay or ring oscillator frequency measurements are made using a delay line that is formed from delay elements that have delay variation substantially caused only by NBTI or PBTI effects. Devices in the delay elements are stressed, and then the delay line/ring oscillator is operated to measure a threshold voltage change for one or more measurement periods on the order of nanoseconds. | 03-31-2011 |
20120262187 | TEST CIRCUIT FOR BIAS TEMPERATURE INSTABILITY RECOVERY MEASUREMENTS - A method and test circuit provide measurements to accurately characterize threshold voltage changes due to negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI). Both the bias temperature instability recovery profile and/or the bias temperature shifts due to rapid repetitions of stress application can be studied. In order to provide accurate measurements when stresses are applied at intervals on the order of tens of nanoseconds while avoiding unwanted recovery, and/or to achieve recovery profile sampling resolutions in the nanosecond range, multiple delay or ring oscillator frequency measurements are made using a delay line that is formed from delay elements that have delay variation substantially caused only by NBTI or PBTI effects. Devices in the delay elements are stressed, and then the delay line/ring oscillator is operated to measure a threshold voltage change for one or more measurement periods on the order of nanoseconds. | 10-18-2012 |