Nobutoshi
Nobutoshi Aoki, Kanagawa-Ken JP
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20100123184 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - In a nonvolatile semiconductor memory device provided with memory cell transistors arranged in a direction and a select transistor to select the memory cell transistors, each of the memory cell transistors of a charge trap type are at least composed of a first insulating layer and a first gate electrode respectively, and the select transistor is at least composed of a second insulating layer and a second gate electrode. The first gate electrode is provided with a first silicide layer of a first width formed on the first insulating layer. The second gate electrode is provided with an impurity-doped silicon layer formed on the second insulating layer and with a second silicide layer of a second width formed on the impurity-doped silicon layer. The second silicide has the same composition as the first silicide. The second width is larger than the first width. | 05-20-2010 |
20120139031 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - In a nonvolatile semiconductor memory device provided with memory cell transistors arranged in a direction and a select transistor to select the memory cell transistors, each of the memory cell transistors of a charge trap type are at least composed of a first insulating layer and a first gate electrode respectively, and the select transistor is at least composed of a second insulating layer and a second gate electrode. The first gate electrode is provided with a first silicide layer of a first width formed on the first insulating layer. The second gate electrode is provided with an impurity-doped silicon layer formed on the second insulating layer and with a second silicide layer of a second width formed on the impurity-doped silicon layer. The second silicide has the same composition as the first silicide. The second width is larger than the first width. | 06-07-2012 |
20120146128 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - In a nonvolatile semiconductor memory device provided with memory cell transistors arranged in a direction and a select transistor to select the memory cell transistors, each of the memory cell transistors of a charge trap type are at least composed of a first insulating layer and a first gate electrode respectively, and the select transistor is at least composed of a second insulating layer and a second gate electrode. The first gate electrode is provided with a first silicide layer of a first width formed on the first insulating layer. The second gate electrode is provided with an impurity-doped silicon layer formed on the second insulating layer and with a second silicide layer of a second width formed on the impurity-doped silicon layer. The second silicide has the same composition as the first silicide. The second width is larger than the first width. | 06-14-2012 |
Nobutoshi Aoki, Yokohama Kanagawa JP
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20150255514 | INTEGRATED CIRCUIT DEVICE - An integrated circuit device according to an embodiment includes a semiconductor substrate, a first semiconductor member and a second semiconductor member provided on the semiconductor substrate, a first electrode disposed between the first semiconductor member and the second semiconductor member, and a second electrode disposed between the semiconductor substrate and the first electrode. The first semiconductor member and the second semiconductor member extend in a first direction perpendicular to an upper surface of the semiconductor substrate. The first semiconductor member and the second semiconductor member are separated in a second direction orthogonal to the first direction. The first electrode extends in a third direction intersecting both the first direction and the second direction. The second electrode extends in the third direction. | 09-10-2015 |
20150255515 | INTEGRATED CIRCUIT DEVICE - An integrated circuit device according to an embodiment, includes a semiconductor member, a first electrode and a second electrode. The semiconductor member includes a first portion of a first conductivity type, a second portion of a second conductivity type, and a third portion of the first conductivity type disposed in this order along a first direction. The first electrode is disposed on a second direction side as viewed from the semiconductor member. The second electrode is disposed on an opposite side of the second direction as viewed from the semiconductor member. An end portion of the second electrode on a first direction side is located in the first direction side rather than that of the first electrode. An end portion of the second electrode on an opposite side of the first direction is located in the first direction side rather than that of the first electrode. | 09-10-2015 |
Nobutoshi Arai, Kitakatsuragi-Gun JP
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20090085025 | MEMORY DEVICE INCLUDING RESISTANCE-CHANGING FUNCTION BODY - A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost. | 04-02-2009 |
Nobutoshi Arai, Osaka-Shi JP
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20130256719 | LIGHT EMITTING DEVICE - A light emitting device according to the present invention comprises: a light emitting element including a semiconductor layer, a first electrode, a dielectric layer sandwiched between the semiconductor layer and the first electrode, and a light emitter; and a power supply circuit for applying a voltage between the semiconductor layer and the first electrode, wherein the light emitter is formed in at least one region of regions in the semiconductor layer, in the dielectric layer, between the semiconductor layer and the dielectric layer, and between the first electrode and the dielectric layer, the light emitting element emits light in one of first and second cases, but does not substantially emit light in the other case, the first case using a current applied to the dielectric layer under a condition that the semiconductor layer serves as a positive electrode and the first electrode serves as a negative electrode, the second case using a current applied to the dielectric layer under a condition that the semiconductor layer serves as the negative electrode and the first electrode serves as the positive electrode, and the power supply circuit is electrically connected to each of the semiconductor layer and the first electrode so that a unidirectional current flows in the dielectric layer while the light emitting element emits the light. | 10-03-2013 |
Nobutoshi Arai, Nara-Ken JP
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20090252888 | Fine Particle-containing Body, Fine Particle-containing Body Manufacturing Method, Storage Element, Semiconductor Device and Electronic Equipment - A silicon oxide of a film thickness of about 50 nm is formed on a surface of a silicon substrate by thermal oxidation. Silver is implanted into the silicon oxide with implantation energy of about 30 keV by a negative ion implantation method. By subjecting the silicon oxide, into which the silver has been implanted, to heat treatment at a temperature of not lower than 200° C. and lower than the melting point of silver, silver particles are formed. By oxidizing the surface portions of the fine particles by heat treatment in an oxidizing atmosphere, silver oxide is formed as a coating layer. | 10-08-2009 |
Nobutoshi Bannno, Kariya-Shi JP
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20130259713 | SWASH PLATE TYPE COMPRESSOR - A swash plate type compressor includes a cylinder block having a crank chamber, a rotary shaft, a swash plate, pistons and fasteners extending through the crank chamber between any two adjacent pistons. The cylinder block further includes ribs projecting inward from inner surface of the crank chamber, extending in axial direction of the rotary shaft and being arranged so that the pistons and the fasteners are positioned alternately between any two adjacent ribs, a piston-side wall surface forming the inner surface and being positioned between any two adjacent ribs located on opposite side of the piston and a fastener-side wall surface forming the inner surface and being positioned between any two adjacent ribs located on opposite side of the fastener The piston-side wall surface is spaced further away from the rotary shaft than the fastener-side wall surface in radial direction of the rotary shaft. | 10-03-2013 |
Nobutoshi Doi, Osaka-Shi JP
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20080288084 | Precursor of a tissue regenerating instrument provided with a swellable rod - The present invention provides a precursor for producing a tissue regenerating instrument that regenerates a tissue, including: a tube made of a biodegradable material provided with a lumen in a longitudinal direction; a rod made of a biodegradable material swellable with a softening solvent, fixed to an inner wall of the tube substantially parallel to the longitudinal direction of the tube; and a fixing means that fixes the rod to the inner wall of the tube, in which the rod in a non-swelled state has a occupied cross-sectional area perpendicular to the longitudinal direction is smaller than a cross-sectional area of the lumen of the tube, and the occupied cross-sectional area perpendicular to the longitudinal direction of the rod in a saturated swelled state with the softening solvent is substantially the same as the cross-sectional area of the lumen of the tube. | 11-20-2008 |
Nobutoshi Fujii, Ibaraki-Ken JP
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20090206453 | Method for Preparing Modified Porous Silica Films, Modified Porous Silica Films Prepared According to This Method and Semiconductor Devices Fabricated Using the Modified Porous Silica Films - A hydrophobic compound having at least one each of hydrophobic group (an alkyl group having 1 to 6 carbon atoms or a —C | 08-20-2009 |
Nobutoshi Fujii, Chigasaki-Shi JP
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20100200990 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCED THEREWITH - A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided. | 08-12-2010 |
Nobutoshi Ito, Otsu-Shi JP
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20130125789 | REFRACTORY FILLER, SEALING MATERIAL USING SAME, AND MANUFACTURING METHOD FOR REFRACTORY FILLER - Provided is a manufacturing method for a refractory filler, comprising melting a raw material batch and cooling the resultant melt to precipitate willemite as a main crystal phase. | 05-23-2013 |
Nobutoshi Maruyama, Hitachi-Shi JP
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20110248071 | AUSTENITIC WELDING MATERIAL, AND PREVENTIVE MAINTENANCE METHOD FOR STRESS CORROSION CRACKING AND PREVENTIVE MAINTENANCE METHOD FOR INTERGRANULAR CORROSION, USING SAME - Disclosed is an austenitic welding material which contains C: 0.01 wt % or less, Si: 0.5 wt % or less, Mn: 0.5 wt % or less, P: 0.005 wt % or less, S: 0.005 wt % or less, Ni: 15 to 40 wt %, Cr: 20 to 30 wt %, N: 0.01 wt % or less, 0: 0.01 wt % or less, and the balance of Fe and inevitable impurities, wherein the content of B contained as one of the inevitable impurities in the welding material is 3 wt ppm or less, and the total content of C, P, S, N and O in the welding material is 0.02 wt % or less. | 10-13-2011 |
Nobutoshi Nakano, Tokyo JP
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20080215375 | Communication system for indemnification insurance service - The object of the present invention is to provide a communication system for indemnification insurance service; the system contributes to rapid procedures to be performed from the occurrence of an accident to the arrival of a staff to the accident scene, including notification to the company of the indemnification insurance service, and certification of the location of the accident scene and the content of the insurance service of the insured, performed inside the company. The communication system for indemnification insurance service | 09-04-2008 |
20080261653 | Cellular phone with built-in IC tag reader - A cellular phone having a main body with a built-in IC tag reader is disclosed. The built-in IC tag reader includes an IC tag reader chip having a function for reading IC tags, and a communications antenna for IC tag use connected to the IC tag reader chip. | 10-23-2008 |
Nobutoshi Otsuka, Azumino JP
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20140253647 | LIQUID STORING CONTAINER - An ink storing container (liquid storing container) includes a memory device configured to store electronic data, an ink containing body (liquid containing body) configured to contain ink, an inner lid configured to cover an ink inlet and outlet formed in the ink containing body, and an outer lid configured to cover the ink inlet and outlet from outside of the inner lid. The memory device is configured to be stored in a storage space formed between the inner lid and the outer lid. Accordingly, without any special additional work to the ink containing body, the memory device can be held by the ink containing body. Also, the memory device is easily removed from the storage space by opening the outer lid. | 09-11-2014 |
Nobutoshi Otsuka, Azumino-Shi JP
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20080259118 | LIQUID EJECTING APPARATUS - A liquid ejecting apparatus according to the invention includes a liquid ejecting head capable of ejecting liquid from nozzle openings provided in a nozzle-forming surface, a nozzle-forming-surface visual-inspection unit for enabling a visual inspection of the nozzle-forming surface, and a liquid receptacle for receiving liquid discharged as waste liquid from the nozzle openings in the liquid ejecting head. The liquid receptacle is movable between a receiving position, where the liquid receptacle is positioned adjacent to the nozzle-forming surface, and a non-receiving position, where the liquid receptacle is positioned away from the receiving position. The liquid receptacle covers the nozzle-forming-surface visual-inspection unit when the liquid receptacle is positioned at the receiving position. The nozzle-forming-surface visual-inspection unit allows the nozzle-forming surface to be visually inspected when the liquid receptacle is positioned at the non-receiving position. | 10-23-2008 |
20110090274 | LIQUID EJECTING APPARATUS AND CONTROL METHOD OF LIQUID EJECTING APPARATUS - The driving signal generation section is able to generate a first ejection drive pulse for ejecting the first liquid and a second ejection drive pulse for ejecting the second liquid. The control section forms a pre-dot group in advance on a landing target area of the first liquid in the ejection target by ejecting the second liquid on the basis of the second ejection drive pulse, and subsequently forms a pattern dot on the landing target area, on which the pre-dot group is formed, by ejecting the first liquid on the basis of the first ejection drive pulse. In the apparatus, a total length of the pre-dot group in a direction of the relative movement is longer than a total length of the pattern dot in the direction of the relative movement. | 04-21-2011 |
20150224786 | Liquid Ejecting Apparatus - A liquid ejecting apparatus includes a plurality of nozzles which eject liquid; a common liquid chamber which supplies liquid to the plurality of nozzles; a liquid flow path for supplying liquid which is accommodated in a liquid accommodation unit to the common liquid chamber; a deaeration unit which deaerates liquid in the liquid flow path; a liquid flow unit which causes liquid in the liquid flow path to flow; a return flow path which connects the common liquid chamber and the liquid accommodation unit; and an on-off valve which closes the return flow path by being in a closed state. | 08-13-2015 |
Nobutoshi Saito, Tokyo JP
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20080245669 | PLATING APPARATUS AND METHOD - An apparatus forms a plated film in fine trenches and plugs for interconnects and in the openings of a resist formed in the surface of a substrate such as a semiconductor wafer, and forms bumps (protruding electrodes) on the surface of a semiconductor wafer. The apparatus includes a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the backside and the edge thereof are hermetically sealed. A plating tank accommodates a plating liquid in which an anode is immersed. A diaphragm is provided in the plating tank and disposed between the anode and the substrate held by the substrate holder. Plating liquid circulating systems circulate the plating liquid to respective regions of the plating tank, separated by the diaphragm. A deaerating unit is disposed in at least one of the plating liquid circulating systems. | 10-09-2008 |
20090139870 | Plating apparatus and plating method - A method can form a conductive structure, which is useful for three-dimensional packaging with via plugs, in a shorter time by shortening the conventional long plating time that is an impediment to the practical use of electroplating. The method includes forming a conductive film on an entire surface, including interior surfaces of via holes, of a substrate having the via holes formed in the surface; forming a resist pattern at a predetermined position on the conductive film; carrying out first electroplating under first plating conditions, using the conductive film as a feeding layer, thereby filling a first plated film into the via holes; and carrying out second electroplating under second plating conditions, using the conductive film and the first plated film as a feeding layer, thereby allowing a second plated film to grow on the conductive film and the first plated film, both exposed in the resist openings of the resist pattern. | 06-04-2009 |
20090139871 | Plating apparatus and plating method - A plating apparatus can form a bump having a flat top or can form a metal film having a good in-plane uniformity even when the plating of a plating object (substrate) is carried out under high-current density conditions. The plating apparatus includes a plating tank for holding a plating solution; an anode to be immersed in the plating solution in the plating tank; a holder for holding a plating object and disposing the plating object at a position opposite the anode; a paddle, disposed between the anode and the plating object held by the holder, which reciprocates parallel to the plating object to stir the plating solution; and a control section for controlling a paddle drive section which drives the paddle. The control section controls the paddle drive section so that the paddle moves at a velocity whose average absolute value is 70 cm/sec to 100 cm/sec. | 06-04-2009 |
20090218231 | Plating apparatus - A plating apparatus according to the present invention has a plating tank for holding a plating solution, an anode disposed so as to be immersed in the plating solution in the plating tank, a regulation plate disposed between the anode and a plating workpiece disposed so as to face the anode, and a plating power supply for supply a current between the anode and the plating workpiece to carry out plating. The regulation plate is disposed so as to separate the plating solution held in the plating tank into a plating solution on the anode side and a plating solution on the plating workpiece side, and a through-hole group having a large number of through-holes is formed in the regulation plate. | 09-03-2009 |
20090301395 | PLATING APPARATUS AND PLATING METHOD - A plating apparatus has an ashing unit ( | 12-10-2009 |
20090311429 | Plating method and apparatus - A plating apparatus has a steam treatment chamber configured to perform a steam treatment using steam on a surface of a substrate, and a plating chamber configured to plate the surface of the substrate subjected to the steam treatment. The plating apparatus also has an acid treatment chamber configured to bring the surface of the substrate subjected to the steam treatment into contact with an acid liquid. The plating apparatus includes a frame housing the steam treatment chamber, the acid treatment chamber, and the plating chamber. | 12-17-2009 |
20110073482 | PLATING APPARATUS - A plating apparatus for use in forming a plated film in trenches, via holes, or resist openings that are defined in a surface of a semiconductor wafer, and forming bumps to be electrically connected to electrodes of a package, on a surface of a semiconductor wafer. The plating apparatus has a plating tank for holding a plating solution, a holder for holding a workpiece and bringing a surface to be plated of the workpiece into contact with the plating solution in the plating tank, and a ring-shaped nozzle pipe disposed in the plating tank and having a plurality of plating solution injection nozzles for injecting the plating solution to the surface to be plated of the workpiece held by the holder to supply the plating solution into the plating tank. | 03-31-2011 |
20120160696 | ELECTROPLATING METHOD - A substrate with a through-hole is immersed in a plating solution in a plating tank. A pair of anodes are disposed in the plating solution in the plating tank in facing relation to face and reverse sides, respectively, of the substrate in the plating solution. A plurality of plating processes are performed on the face and reverse sides by supplying pulsed currents respectively between the face side of the substrate and one of the anodes which faces the face side of the substrate, and between the reverse side of the substrate and the other anode which faces the reverse side of the substrate. A reverse electrolyzing process is performed on the face and reverse sides between adjacent plating processes by supplying currents in an opposite direction to the pulsed currents respectively between the face side of the substrate and one of the anodes, and between the reverse side of the substrate and the other anode. | 06-28-2012 |
20120193220 | PLATING APPARATUS AND PLATING METHOD - A plating apparatus can form a bump having a flat top or can form a metal film having a good in-plane uniformity even when the plating of a plating object (substrate) is carried out under high-current density conditions. The plating apparatus includes a plating tank for holding a plating solution; an anode to be immersed in the plating solution in the plating tank; a holder for holding a plating object and disposing the plating object at a position opposite the anode; a paddle, disposed between the anode and the plating object held by the holder, which reciprocates parallel to the plating object to stir the plating solution; and a control section for controlling a paddle drive section which drives the paddle. The control section controls the paddle drive section so that the paddle moves at a velocity whose average absolute value is 70 cm/sec to 100 cm/sec. | 08-02-2012 |
20130015075 | PLATING APPARATUS AND PLATING METHOD - A plating apparatus has an ashing unit ( | 01-17-2013 |
20140287580 | METHOD FOR FORMING CONDUCTIVE STRUCTURE, AND PLATING APPARATUS AND PLATING METHOD - A method can form a conductive structure, which is useful for three-dimensional packaging with via plugs, in a shorter time by shortening the conventional long plating time that is an impediment to the practical use of electroplating. The method includes forming a conductive film on an entire surface, including interior surfaces of via holes, of a substrate having the via holes formed in the surface; forming a resist pattern at a predetermined position on the conductive film; carrying out first electroplating under first plating conditions, using the conductive film as a feeding layer, thereby filling a first plated film into the via holes; and carrying out second electroplating under second plating conditions, using the conductive film and the first plated film as a feeding layer, thereby allowing a second plated film to grow on the conductive film and the first plated film, both exposed in the resist openings of the resist pattern. | 09-25-2014 |
Nobutoshi Sasaki, Minato-Ku JP
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20100130798 | PRODUCTION PROCESS FOR 1,2,3,4-TETRACHLOROHEXAFLUOROBUTANE AND REFINING PROCESS - The production process for 1,2,3,4-tetrachlorohexafluorobutane of the present invention is characterized in that 1,2,3,4-tetrachlorobutane is reacted with fluorine in the presence of a solvent containing hydrogen fluoride. The 1,2,3,4-tetrachlorobutane may be obtained by chlorination of 3,4-dichlorobutene-1. Further, the present invention provides as well a process of refining 1,2,3,4-tetrachlorohexafluorobutane obtained in the manner described above. | 05-27-2010 |
Nobutoshi Sekiguchi, Yokohama JP
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20110051762 | Pulse Mode Modulation In Frequency Converted Laser Sources - Methods of operating a frequency-converted laser source are disclosed. According to particular disclosed embodiments, a laser diode is driven in a pulsed mode to define pixel intensity values corresponding to desired gray scale values of image pixels in an image plane of the laser source. The pixel intensity values are a function of a laser control signal comprising a discontinuous pulse component, a relatively constant intensity component I, and a continuously variable intensity component I*. The pulse width w of the discontinuous pulse component is selected from a set of discrete available pulse widths according to a desired pixel gray scale value. A low-end pulse width w of the set of available pulse widths is established for a range of low-end pixel gray scale values and progressively larger pulse widths w are established for ranges of progressively higher pixel gray scale values. The relatively constant intensity component I makes a relatively insignificant contribution to pixel intensity at the low-end pulse width w for the range of low-end pixel gray scale values and assumes a non-zero value for enhanced conversion efficiency at the progressively larger pulse widths w established for the higher pixel gray scale values. The continuously variable intensity component I* varies according to the desired gray scale value of the selected pixel and the contributions of the relatively constant intensity component I and the pulse width w to pixel intensity. | 03-03-2011 |
20130272014 | MULTI-WAVELENGTH LIGHT SOURCE USING LIGHT DIFFUSING FIBERS - At least one flexible light diffusing waveguide is arranged to define a plurality of light diffusing waveguide segments arranged substantially parallel to one another, and is coupled to at least one light source to provide a flexible light panel suitable for general lighting purposes or for use as a backlight in a display, such as a video display. Multiple waveguides can be coupled to different color light sources to provide a multi-colored flexible backlight that is usable in combination with a flexible matrix-addressable panel to provide a flexible video display. | 10-17-2013 |
Nobutoshi Yamaguchi, Tokyo JP
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20080217190 | Container - A container which is not bulky at the time of shipping and can be stably stood on a suitable place. The container includes a lid member for closing a take-out opening (brittle portion) of the container body | 09-11-2008 |
20130032241 | EJECTION DEVICE AND METHOD OF FILLING THE EJECTION DEVICE WITH A MATERIAL - [Problems] To fill a container with a material without applying a high pressure to the material that is to be filled. | 02-07-2013 |
20130175300 | KNOCK-TYPE EJECTION CONTAINER - [Problems] To provide an ejection container capable of falling a liquid in drops from the container body without relying on the sense of the fingertips and without affected by a change in the temperature. | 07-11-2013 |
Nobutoshi Yamaguchi, Taito-Ku JP
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20120006709 | CONTAINER - A container which is not bulky at the time of shipping and can be stably stood on a suitable place. The container includes a lid member for closing a take-out opening (brittle portion) of the container body | 01-12-2012 |
20120160718 | LIQUID MIXING CONTAINER - [Problems] To provide a two-liquid mixing container which prevents two liquids from being mixed together by erroneous operation and does not permit sheet-like contaminants from mixing into the mixed liquid. | 06-28-2012 |