Patent application number | Description | Published |
20080207005 | Wafer Cleaning After Via-Etching - When a semiconductor wafer bears porous dielectric materials it is still possible to perform post-via-etch cleaning of the wafer using aqueous cleaning fluids if, before and/or simultaneously with application of the aqueous cleaning fluid(s), a water-soluble organosilane or like passivation material is used to form a passivation layer on the porous dielectric material. | 08-28-2008 |
20090094098 | Promotion of a wine industry - Disclosed herein is a method and system for promoting a first wine industry of a first geographical location utilizing a plurality of advertising media. In a first embodiment, the plurality of advertising mediums is selected for promoting the first wine industry. The disclosed method links information of contribution of the first wine industry to a second wine industry. The information is publicized in a plurality of locations. In a second embodiment, the first wine industry is promoted utilizing a web portal. The web portal comprises a first set of information of the first wine industry and a second set of information of the second wine industry. The web portal establishes a virtual link between the first set of information and the second set of information. Further, revenue may be generated through the advertising mediums and targeted advertising. | 04-09-2009 |
20100200995 | COUPLING LAYER COMPOSITION FOR A SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, METHOD OF FORMING THE COUPLING LAYER, AND APPARATUS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE - Molecules of a coupling layer composition in a semiconductor device are bidimensionally polymerized in order to provide enhanced moisture blocking effect, particularly when the coupling layer is formed on a porous layer, such as a porous dielectric layer. The deposition of the coupling layer on the underlying structure and/or the cross-polymerization of the coupling layer composition and/or a final metallization can be photo-activated, especially, but not only, using an ultraviolet light. | 08-12-2010 |
Patent application number | Description | Published |
20080197487 | Semiconductor Device Including a Coupled Dielectric Layer and Metal Layer, Method of Fabrication Thereof, and Material for Coupling a Dielectric Layer and a Metal Layer in a Semiconductor Device - A passivating coupling material for, on the one hand, passivating a dielectric layer in a semiconductor device, and on the other hand, for permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. In a particular example, the dielectric layer may be a porous material having a desirably decreased dielectric constant k, and the passivating coupling material provides steric shielding groups that substantially block the adsorption and uptake of ambient moisture into the porous dielectric layer. The passivating coupling materials also provides metal nucleation sides for promoting the deposition of a metal thereon in liquid phase, in comparison with metal deposition without the presence of the passivating coupling material. The use of a liquid phase metal deposition process facilitates the subsequent manufacture of the semiconductor device. In one example, the passivating coupling material has multiple Si atoms in its chemical composition, which desirably increases the thermal stability of the material. | 08-21-2008 |
20080242110 | Capping Layer Formation Onto a Dual Damescene Interconnect - A process for the formation of a capping layer on a conducting interconnect for a semiconductor device is provided, the process comprising the steps of: (a) providing one or more conductors in a dielectric layer, and (b) depositing a capping layer on an upper surface of at least some of the one or more conductors, characterised in that the process further includes: (c) the step of, prior to depositing the capping layer, reacting the dielectric layer with an organic compound in a liquid phase, the said organic compound having the following general formula: (I) where X is a functional group, R is an organic group or a organosiloxane group, Y1 is either a functional group or an organic group or organosiloxane group, and Y2 is either a functional group or an organic group or organosiloxane group, and where the functional group(s) is/are independently selected from the following: NH2, a secondary amine, a tertiary amine, acetamide, trifluoroacetamide, imidazole, urea, OH, an alkyoxy, acryloxy, acetate, SH, an alkylthiol, sulfonate, methanosulfonate, and cyanide, and salts thereof. | 10-02-2008 |
20080287041 | System and Method for Removing Particles From a Polishing Pad - A system for removing particles from a polishing pad to improve the efficiency of the removal of material by the polishing pad as part of a chemical-mechanical polishing process, the system comprising a polishing pad; a fluid dispenser arranged to dispense a fluid on the polishing pad; and removal means, wherein the removal means include a heater for increasing the temperature of the fluid dispensed on the polishing pad, and/or voltage means for coupling the polishing pad to a voltage source for repelling charged particles from the polishing pad surface while the fluid dispenser is dispensing the fluid on the polishing pad. | 11-20-2008 |
20100139526 | SEMICONDUCTOR DEVICE INCLUDING A COUPLED DIELECTRIC LAYER AND METAL LAYER, METHOD OF FABRICATION THEREOR, AND MATERIAL FOR COUPLING A DIELECTRIC LAYER AND A METAL LAYER IN A SEMICONDUCTOR DEVICE - A passivating coupling material for, on the one hand, passivating a dielectric layer in a semiconductor device, and on the other hand, for permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. In a particular example, the dielectric layer may be a porous material having a desirably decreased dielectric constant k, and the passivating coupling material provides steric shielding groups that substantially block the adsorption and uptake of ambient moisture into the porous dielectric layer. The passivating coupling materials also provides metal nucleation sides for promoting the deposition of a metal thereon in liquid phase, in comparison with metal deposition without the presence of the passivating coupling material. The use of a liquid phase metal deposition process facilitates the subsequent manufacture of the semiconductor device. In one example, the passivating coupling material has multiple Si atoms in its chemical composition, which desirably increases the thermal stability of the material. | 06-10-2010 |