Patent application number | Description | Published |
20080285360 | Semiconductor Memory Device and Method of Reading Data Therefrom - A semiconductor memory device of the present invention comprises a memory array and a read circuit that reads data of a selected cell. The memory array includes a plurality of memory cells and a reference cell each having a memory element that stores data based on change in resistance value. The read circuit includes: a voltage comparison unit that compares a value corresponding to a sense current from the selected cell with a value corresponding to a reference current from the reference cell; a first switch; and a second switch. Both of the first and second switches are provided at a subsequent stage of a decoder and at a preceding stage of the voltage comparison unit. The second switch circuit controls input of the value corresponding to the sense current to the voltage comparison unit, while the first switch circuit controls input of the value corresponding to the reference current to the voltage comparison unit. | 11-20-2008 |
20090010044 | Toggle Magnetic Random Access Memory and Write Method of Toggle Magnetic Random Access Memory - A toggle magnetic random access memory includes a first memory array, a second memory array and a controller. The first memory array includes a plurality of first memory cells including magnetoresistive elements. The second memory array includes a plurality of second memory cells including magnetoresistive elements and differs from the first memory array in write wirings used for writing. The controller controls the first memory array and the second memory array such that a first state in which a first burst write operation in the first memory array is executed and a second state in which a second burst write operation in the second memory array is executed are alternately executed in a continuous burst write mode. Accordingly, the continuous burst write operation can be executed at the high speed without any drop in the reliability and any increase in the circuit area. | 01-08-2009 |
20090122597 | MAGNETIC RANDOM ACCESS MEMORY - An MRAM is provided with a memory main body ( | 05-14-2009 |
20090125787 | Operation Method of Mram - An operation method of a MRAM of the present invention stores in memory arrays, error correction codes, each of which comprises of symbols, each of which comprises bits, and to which an error correction is possible in units of symbols. In the operation method, the symbols are read by using the reference cells different from each other. Moreover, when a correctable error is detected in a read data of the error correction code from data cells corresponding to an input address, (A) a data in the data cell corresponding to an error bit is corrected, for a first error symbol as an error pattern of one bit, and (B) a data in the reference cell that is used to read a second error symbol is corrected for a second error symbol as en error pattern of the bits. | 05-14-2009 |
20090137499 | BENZYLPHENYL GLUCOPYRANOSIDE DERIVATIVE - The present invention relates to a benzylphenyl glucopyranoside derivative having an excellent inhibitory effect on human SGLT1 and/or SGLT2 activity. There is provided a compound or a pharmacologically acceptable salt thereof represented by the following general formula (I): | 05-28-2009 |
20090141544 | Mram and Operation Method of the Same - An operation method of an MRAM of the present invention is an operation method of the MRAM in which a data write operation is carried out in a toggle write. The operation method of the present invention includes: (A) reading a data from a data cell by using a reference signal which is generated by using a reference cell; (B) performing an error detection on the read data; (C) correcting the data stored in the data cell, when an error is detected in the read data; (D) reading the data from the data cell as a first re-read data after the (C), when the error is detected in the read data, (E) performing the error detection on the first re-read data; (F) correcting the data stored in the reference cell, when an error is detected in the first re-read data; (G) reading the data from the data cell as a second re-read data after the (F), when the error is detected in the first re-read data; (H) performing the error detection on the second re-read data; and (I) correcting the data stored in the data cell again, when the error is detected in the second re-read data. | 06-04-2009 |
20090161423 | MAGNETIC RANDOM ACCESS MEMORY - An MRAM having a first cell array group ( | 06-25-2009 |
20090262571 | Magnetic random access memory and operating method of magnetic random access memory - A magnetic random access memory includes: a first and second wirings, a plurality of third wirings, a plurality of memory cells and a terminating unit. The first and second wirings extend in a Y direction. The plurality of third wirings extends in an X direction. The memory cell is provided correspondingly to an intersection between the first and second wirings and the third wiring. The terminating unit is provided between the plurality of memory cells and connected to the first and second wirings. The memory cell includes transistors and a magnetoresistive element. The transistors are connected in series between the first and second wirings and controlled based on a signal of the third wiring. The magnetoresistive element is connected to a wiring through which the transistors are connected. At a time of a writing operation, when the write current Iw is supplied from one of the first and second wiring to the other through the transistors, the terminating unit grounds the other. | 10-22-2009 |
20090296454 | MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY - A magnetic memory cell | 12-03-2009 |
20100046284 | MRAM - An MRAM comprises: a plurality of magnetic memory cells each having a magnetoresistive element; and a magnetic field application section. The magnetic field application section applies an offset adjustment magnetic field in a certain direction to the plurality of magnetic memory cells from outside the plurality of magnetic memory cells. Respective data stored in the plurality of magnetic memory cells become the same when the offset adjustment magnetic field is removed. | 02-25-2010 |
20100067292 | Semiconductor Integrated Circuit - A semiconductor integrated circuit is provided that can prevent an internal voltage from the voltage generating circuit from varying during a long term. The semiconductor integrated circuit of the present invention includes a voltage generating circuit configured to generate a reference voltage; a function circuit configured to operate by using the reference voltage; a first capacitance connected to a first node between the voltage generating circuit and the function circuit; and a switch provided between the voltage generating circuit and the first node. The switch is in a turned-off state at least for a period during which the function circuit is in an activated state. | 03-18-2010 |
20100177558 | MRAM HAVING VARIABLE WORD LINE DRIVE POTENTIAL - An MRAM of a spin transfer type according to the invention is provided with a memory cell | 07-15-2010 |
20110003787 | NOVEL PHENYLPYRROLE DERIVATIVE - The present invention relates to a compound or a pharmacologically acceptable salt thereof having superior glucokinase activating activity, and is a compound represented by general formula (I), or pharmacologically acceptable salt thereof: | 01-06-2011 |
20110053974 | CARBOXYLIC ACID COMPOUND - To find a therapeutic agent and/or a preventive agent for diabetes mellitus or the like having excellent activity and safety. A compound represented by the following general formula (I), or a pharmacologically acceptable salt thereof. In the formula, X represents ═C(R5)- or ═N—; Y represents —O— or —NH—; L represents a bond or a substitutable C1-C3 alkylene group; M represents a substitutable C3-C10 cycloalkyl group, a substitutable C6-C10 aryl group, or a substitutable heterocyclic group; R | 03-03-2011 |
20120022075 | NOVEL PHENYLPYRROLE DERIVATIVE - The present invention relates to a compound or a pharmacologically acceptable salt thereof having superior glucokinase activating activity, and is a compound represented by general formula (I), or pharmacologically acceptable salt thereof: | 01-26-2012 |
20120129832 | AMIDE DERIVATIVE - Provided are a compound having an excellent hypoglycemic action, or a pharmaceutically acceptable salt thereof, and a pharmaceutical composition having an excellent therapeutic effect and/or prophylactic effect on type 1 diabetes, type 2 diabetes, and the like, which cause an increase in the blood sugar level due to abnormal sugar metabolism. A compound represented by general formula (I), or a pharmaceutically acceptable salt thereof, is disclosed. | 05-24-2012 |
20120129891 | SULFONE DERIVATIVE - Provided are a compound having an excellent hypoglycemic action, or a pharmaceutically acceptable salt thereof, and a pharmaceutical composition having an excellent therapeutic effect and/or prophylactic effect on type 1 diabetes, type 2 diabetes, and the like, which cause an increase in the blood sugar level due to abnormal sugar metabolism. A compound represented by general formula (I), or a pharmaceutically acceptable salt thereof, is disclosed. | 05-24-2012 |
20120206959 | MAGNETIC MEMORY CELL AND MAGNETIC RANDOM ACCESS MEMORY - A magnetic memory cell | 08-16-2012 |
20120275000 | OPTICAL SCANNING DEVICE - An optical scanning device of the present invention includes: an oscillating mirror that reflects incident light; a first beam unit that is coupled to one end of the oscillating mirror; a second beam unit that is coupled to another end of the oscillating mirror; a first driving unit that is coupled to the first beam unit, is disposed between the first beam unit and the first adjusting unit, and that causes the oscillating mirror to oscillate; and a first adjusting unit that is coupled to the first driving unit, and adjusts a modulus of elasticity of the first beam unit by elastically deforming the first beam unit. | 11-01-2012 |
20130063799 | MAGNETIC FORCE DRIVE DEVICE, OPTICAL SCANNING DEVICE, AND IMAGE DISPLAY DEVICE - A magnetic force drive device ( | 03-14-2013 |
20130128328 | Optical scanning device and image display device - An optical scanning device includes movable mirror ( | 05-23-2013 |
20130229698 | OPTICAL SCANNING DEVICE - Optical scanning device | 09-05-2013 |
20130278984 | OPTICAL SCANNING DEVICE - Optical scanning device | 10-24-2013 |
20130327335 | AIR CLEANING APPARATUS AND METHOD FOR PREDICTING BREAKTHROUGH TIME FOR THE SAME - An air cleaning apparatus capable of predicting a breakthrough time of a filtering portion is provided. Regarding a mask | 12-12-2013 |
20140118809 | OPTICAL SCANNING DEVICE, IMAGE DISPLAY APPARATUS AND OPTICAL SCANNING METHOD - Provided is an optical scanning device capable of solving the problem of low driving efficiency. A pair of coupling parts | 05-01-2014 |