Patent application number | Description | Published |
20130182836 | SECRET SHARING SYSTEM, SECRET SHARING APPARATUS, SECRET SHARING METHOD, SECRET SORTING METHOD, SECRET SHARING PROGRAM - A secret sharing system according to the present invention includes N secret sharing apparatuses. The secret sharing system according to the present invention includes fragment replacement means and reshare means. The fragment replacement means selects a number, smaller than N, of secret sharing apparatuses, generates a bijection π of {1, . . . , K}→{1, . . . , K}among the selected secret sharing apparatuses and designates a fragment a | 07-18-2013 |
20130304780 | SECURE SUM-OF-PRODUCT COMPUTATION METHOD, SECURE SUM-OF-PRODUCT COMPUTATION SYSTEM, COMPUTATION APPARATUS AND PROGRAMS THEREFOR - There is provided a method that can quickly perform a secure sum-of-product computation by cooperative computation by three parties (computation apparatuses) that is easy to implement. In a secure computation method in which a party X performs a party-X random number generation step, a party-X first computation step and a party-X second computation step, a party Y performs a party-Y random number generation step, a party-Y first computation step and a party-Y second computation step, and a party Z performs a party-Z random number generation step, a party-Z first computation step and a party-Z second computation step, computation processings performed by the parties are symmetrical to each other. | 11-14-2013 |
20130339728 | SECURE PRODUCT-SUM COMBINATION SYSTEM, COMPUTING APPARATUS, SECURE PRODUCT-SUM COMBINATION METHOD AND PROGRAM THEREFOR - The efficiency of multiplication in secure function computation is increased to make the secret function computation faster than before. Three or more computing apparatuses cooperate to generate a secret value of a random number, perform secure function computation for secret values of arbitrary values by using a function including addition and multiplication to compute concealed function values, and compute a secret value. If the secret value is [0], a concealed function value is output; otherwise, information indicating that tampering has been detected is output. | 12-19-2013 |
20150193633 | SECRET SHARING SYSTEM, DATA DISTRIBUTION APPARATUS, DISTRIBUTED DATA TRANSFORM APPARATUS, SECRET SHARING METHOD AND PROGRAM - A secret sharing system transforms shares in ramp secret sharing to shares in homomorphic secret sharing. On a data distribution apparatus, a division part divides information a into N shares f | 07-09-2015 |
20150358152 | TAMPERING DETECTION DEVICE, TAMPERING DETECTION METHOD AND PROGRAM - The present invention can be efficiently applied to secure computation and can achieve a low probability of successful tampering. A tampering detection device includes a parameter storage storing a parameter α | 12-10-2015 |
20150358155 | SECRET COMPUTATION SYSTEM, ARITHMETIC UNIT, SECRET COMPUTATION METHOD AND PROGRAM - Each of at least three arithmetic units includes: a random number generator determining shared value [r] obtained by performing secret sharing of random number r; a randomizator using shared value [a | 12-10-2015 |
Patent application number | Description | Published |
20080203500 | Semiconductor device and production method therefor - A semiconductor device provided with a MIS type field effect transistor comprising a silicon substrate, a gate insulating film having a high-dielectric-constant metal oxide film which is formed on the silicon substrate via a silicon containing insulating film, a silicon-containing gate electrode formed on the gate insulating film, and a sidewall including, as a constituting material, silicon oxide on a lateral face side of the gate electrode, wherein a silicon nitride film is interposed between the sidewall and at least the lateral face of the gate electrode. This semiconductor device, although having a fine structure with a small gate length, is capable of low power consumption and fast operation. | 08-28-2008 |
20090170252 | Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layer - A formation method of a metallic compound layer includes preparing, in a chamber, a substrate having a surface on which a semiconductor material of silicon, germanium, or silicon germanium is exposed, and forming a metallic compound layer, includes: supplying a raw material gas containing a metal for forming a metallic compound with the semiconductor material to the chamber; heating the substrate to a temperature at which the raw material gas is pyrolyzed; and forming a metallic compound layer by reaction of the metal with the semiconductor material so that no layer of the metal is deposited on the substrate. A manufacturing method of a semiconductor device employs this formation method of a metallic compound layer. | 07-02-2009 |
20090203208 | COPPER ALLOY FOR WIRING, SEMICONDUCTOR DEVICE, METHOD FOR FORMING WIRING, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A wiring metal contains a polycrystal of copper (Cu) as a primary element and an additional element other than Cu, and concentration of the additional element is, at crystal grain boundaries composing the Cu polycrystal and in vicinities of the crystal grain boundaries, higher than that of the inside of the crystal grains. The additional element is preferably at least one element selected from a group consisting of Ti, Zr, Hf, Cr, Co, Al, Sn, Ni, Mg, and Ag. This Cu wiring is formed by forming a Cu polycrystalline film, forming an additional element layer on this Cu film, and diffusing this additional element from the additional element layer into the Cu film. This copper alloy for wiring is preferred as metal wiring formed for a semiconductor device. | 08-13-2009 |
20090267163 | Semiconductor Device - According to the present invention, a semiconductor device having a field effect transistor is provided. The field effect transistor comprises a gate insulating film | 10-29-2009 |
20100219478 | MOSFET, METHOD OF FABRICATING THE SAME, CMOSFET, AND METHOD OF FABRICATING THE SAME - The present invention provides an NMOSFET including a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, and a first gate electrode formed on the gate insulating film. The first gate electrode is composed of silicide of a metal M, and at least one element selected as an impurity from a group consisting of sulfur (S), fluorine (F) and chlorine (Cl). The impurity exists as an impurity layer at a surface of the first gate electrode at which the first gate electrode makes contact with the gate insulating film. | 09-02-2010 |
20100320520 | DIELECTRIC, CAPACITOR USING DIELECTRIC, SEMICONDUCTOR DEVICE USING DIELECTRIC, AND MANUFACTURING METHOD OF DIELECTRIC - To make it possible to significantly suppress the leakage current in a semiconductor device having a capacitor structure using a dielectric film. There is provided a composite oxide dielectric which is mainly composed of Zr, Al and O, and which has a composition ratio of Zr and Al in a range of (1−x):x where 0.01≦x≦0.15, and has a crystal structure. When the dielectric is set to have the Al composition in the above described range and is crystallized, the relative dielectric constant of the dielectric can be significantly increased. When the dielectric is used as a dielectric film of a capacitor of a semiconductor device, the leakage current of the capacitor can be significantly reduced. | 12-23-2010 |
20110018100 | CAPACITOR, SEMICONDUCTOR DEVICE COMPRISING THE SAME, METHOD FOR MANUFACTURING THE CAPACITOR, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - Provided is a capacitor that realizes a capacitance insulation film having a large relative permittivity and has sufficient capacitance even if an occupied space is small with a reduced amount of leakage current. A capacitor includes: a capacitance insulation film; and an upper electrode and lower electrode each formed on both sides of the capacitance insulation film. The capacitance insulation film is a complex oxide whose main ingredients are Zr, Al and O with the composition ratio of Zr to Al being set at (1−x): x (0.01≦x≦0.15) and is composed of a dielectric substance having a crystal structure. The lower electrode is composed of a conductor whose surface contiguous to at least the dielectric film has an amorphous structure. | 01-27-2011 |
20120061844 | COPPER ALLOY FOR WIRING, SEMICONDUCTOR DEVICE, METHOD FOR FORMING WIRING, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A wiring metal contains a polycrystal of copper (Cu) as a primary element and an additional element other than Cu, and concentration of the additional element is, at crystal grain boundaries composing the Cu polycrystal and in vicinities of the crystal grain boundaries, higher than that of the inside of the crystal grains. The additional element is preferably at least one element selected from a group consisting of Ti, Zr, Hf, Cr, Co, Al, Sn, Ni, Mg, and Ag. This Cu wiring is formed by forming a Cu polycrystalline film, forming an additional element layer on this Cu film, and diffusing this additional element from the additional element layer into the Cu film. This copper alloy for wiring is preferred as metal wiring formed for a semiconductor device. | 03-15-2012 |