Patent application number | Description | Published |
20080284481 | Cross-point latch and method of operating the same - Provided is a cross-point latch and a method of operating the cross-point latch. The cross-point latch includes a signal line, two control lines crossing the signal line, and unipolar switches disposed at crossing points between the signal line and the control lines. | 11-20-2008 |
20080312088 | Field effect transistor, logic circuit including the same and methods of manufacturing the same - Provided are a field effect transistor, a logic circuit including the same and methods of manufacturing the same. The field effect transistor may include an ambipolar layer that includes a source region, a drain region, and a channel region between the source region and the drain region, wherein the source region, the drain region, and the channel region may be formed in a monolithic structure, a gate electrode on the channel region, and an insulating layer separating the gate electrode from the ambipolar layer, wherein the source region and the drain region have a width greater than that of the channel region in a second direction that crosses a first direction in which the source region and the drain region are connected to each other. | 12-18-2008 |
20090020399 | Electromechanical switch and method of manufacturing the same - Provided is an electromechanical switch and a method of manufacturing the same. The electromechanical switch includes an elastic conductive layer that moves by the application of an electric field, wherein the elastic conductive layer includes at least one layer of graphene. | 01-22-2009 |
20090032795 | Schottky diode and memory device including the same - A Schottky diode and a memory device including the same are provided. The Schottky diode includes a first metal layer and an Nb-oxide layer formed on the first metal layer. | 02-05-2009 |
20090251267 | Inductors and methods of operating inductors - An inductor may include a conductive line including a material in which an electrical resistance varies depending on an electric field applied to the material and/or first and second electrodes electrically connected to first and second end portions of the conductive line, respectively. A method of operating an inductor may include applying current to a conductive line of the inductor. The conductive line may include a material in which an electrical resistance may vary depending on an electric field applied to the material. The current may be applied to the conductive line via first and second electrodes electrically connected to first and second end portions of the conductive line, respectively. | 10-08-2009 |
20090294759 | Stack structure comprising epitaxial graphene, method of forming the stack structure, and electronic device comprising the stack structure - Provided are a stack structure including an epitaxial graphene, a method of forming the stack structure, and an electronic device including the stack structure. The stack structure includes: a Si substrate; an under layer formed on the Si substrate; and at least one epitaxial graphene layer formed on the under layer. | 12-03-2009 |
20110089403 | Electronic device using a two-dimensional sheet material, transparent display and methods of fabricating the same - An electronic device, a transparent display and methods for fabricating the same are provided, the electronic device including a first, a second and a third element each formed of a two-dimensional (2D) sheet material. The first, second, and third elements are stacked in a sequential order or in a reverse order. The second element is positioned between the first element and the third element. The second element has an insulator property, the first and third elements have a metal property or a semiconductor property. | 04-21-2011 |
20110089995 | Graphene device and method of manufacturing the same - Provided is a graphene device and a method of manufacturing the same. The graphene device may include an upper oxide layer on at least one embedded gate, and a graphene channel and a plurality of electrodes on the upper oxide layer. The at least one embedded gate may be formed on the substrate. The graphene channel may be formed on the plurality of electrodes, or the plurality of electrodes may be formed on the graphene channel. | 04-21-2011 |
20110092054 | Methods for fixing graphene defects using a laser beam and methods of manufacturing an electronic device - Methods of fixing graphene using a laser beam and methods of manufacturing an electronic device are provided, the method of fixing graphene includes fixing a defect of a graphene nanoribbon by irradiating the laser beam onto the graphene nanoribbon. | 04-21-2011 |
20110095287 | Nonvolatile memory device and nonvolatile memory array including the same - A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer, and/or an upper electrode on the second semiconductor oxide layer. | 04-28-2011 |
20120075008 | GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE SAME - The graphene device may include an upper oxide layer on at least one embedded gate, and a graphene channel and a plurality of electrodes on the upper oxide layer. The at least one embedded gate may be formed on the substrate. The graphene channel may be formed on the plurality of electrodes, or the plurality of electrodes may be formed on the graphene channel. | 03-29-2012 |
20130240826 | Resistive Memory Cells and Devices Having Asymmetrical Contacts - A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide. | 09-19-2013 |
20130252395 | RESISTIVE RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME - Example embodiments relate to a resistive random access memory (RRAM) and a method of manufacturing the RRAM. A RRAM according to example embodiments may include a lower electrode, which may be formed on a lower structure (e.g., substrate). A resistive layer may be formed on the lower electrode, wherein the resistive layer may include a transition metal dopant. An upper electrode may be formed on the resistive layer. Accordingly, the transition metal dopant may form a filament in the resistive layer that operates as a current path. | 09-26-2013 |