Patent application number | Description | Published |
20080283487 | PROCESS FOR PRODUCING THREE-DIMENSIONAL PHOTONIC CRYSTAL AND THE THREE-DIMENSIONAL PHOTONIC CRYSTAL - A process for producing a three-dimensional photonic crystal comprises the steps of providing a base material having first and second faces adjoining together at a first angle; forming a first mask on the first face; forming fine holes in the base material by dry-etching on the first face in a direction at a second angle to the first face; forming a second mask on the second face; and forming fine holes in the base material by dry-etching on the second face in a direction at a third angle to the second face; the first mask and the second mask, being formed by implantation of ions by a focused ion beam onto the surface layer of the mask formation face of the base material. | 11-20-2008 |
20080283493 | METHOD FOR FORMING ETCHING MASK, METHOD FOR FABRICATING THREE-DIMENSIONAL STRUCTURE AND METHOD FOR FABRICATING THREE-DIMENSIONAL PHOTONIC CRYSTALLINE LASER DEVICE - A method for forming an etching mask comprises the steps of: irradiating focus ion beam to a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises the steps of: preparing a substrate; irradiating focus ion beam to a surface of the substrate and forming an etching mask including an ion containing portion in the irradiated region; and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes. | 11-20-2008 |
20080286892 | METHOD FOR FABRICATING THREE-DIMENSIONAL PHOTONIC CRYSTAL - A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface. | 11-20-2008 |
20080298744 | PHOTONIC CRYSTAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A photonic crystal structure is provided the optical characteristics of which vary periodically in at least one direction, wherein the base material of the photonic crystal structure is formed of a dielectric material, a region containing at least one of molecules, atoms and ions different from the constituent element of the base material is provided in the base material, and the region is arranged in the base material so that the density of one of the molecules, atoms and ions varies periodically in the one direction. | 12-04-2008 |
20090052486 | LASER APPARATUS AND PRODUCTION METHOD OF LASER APPARATUS - Provided are a laser apparatus into which a large current can be injected and a production method which enables easy production of the apparatus. A laser apparatus includes a light-emitting region on a substrate, and a periodic refractive index structure containing an i-type material provided at a periphery of the light-emitting region. Another laser apparatus includes a light-emitting region between a first electrode and a second electrode on a substrate, wherein at least one of the first and the second electrodes includes a periodic refractive index structure. | 02-26-2009 |
20090315153 | NANO STRUCTURE AND MANUFACTURING METHOD OF NANO STRUCTURE - To provide a method of manufacturing a nano structure having a pattern of 2 μm or more in depth formed on the surface of a substrate containing Si and a nano structure having a pattern of a high aspect and nano order. A nano structure having a pattern of 2 μm or more in depth formed on the surface of a substrate containing Si, wherein the nano structure is configured to contain Ga or In on the surface of the pattern, and has the maximum value of the concentration of the Ga or the In positioned within 50 nm of the surface of the pattern in the depth direction of the substrate. Further, its manufacturing method is configured such that the surface of the substrate containing Si is irradiated with a focused Ga ion or In ion beam, and the Ga ions or the In ions are injected, while sputtering away the surface of the substrate, and a layer containing Ga or In is formed on the surface of the substrate, and with this layer taken as an etching mask, a dry etching is performed. | 12-24-2009 |
20110027998 | Method of Manufacturing A Nano Structure By Etching, Using A Substrate Containing Silicon - A method of manufacturing a nano structure by etching, using a substrate containing Si. A focused Ga ion or In ion beam is irradiated on the surface of the substrate containing Si. The Ga ions or the In ions are injected while sputtering away the surface of the substrate so that a layer containing Ga or In is formed on the surface of the substrate. Dry etching by a gas containing fluorine (F) is performed with the layer containing the Ga or the In formed on the surface of the substrate taken as an etching mask, and the nano structure is formed having a pattern of at least 2 μm tin in depth according to a predetermined line width. | 02-03-2011 |
20110042718 | NITRIDE SEMICONDUCTOR LAYER-CONTAINING STRUCTURE, NITRIDE SEMICONDUCTOR LAYER-CONTAINING COMPOSITE SUBSTRATE AND PRODUCTION METHODS OF THESE - A nitride semiconductor layer-containing structure having a configuration in which: the structure includes a laminated structure based on at least two nitride semiconductor layers; the structure includes between the two nitride semiconductor layers in the laminated structure a plurality of voids surrounded by the faces of the walls inclusive of the inner walls of the recessed portions of the asperity pattern formed on the nitride semiconductor layer that is the lower layer of the two nitride semiconductor layers; and crystallinity defect-containing portions to suppress the lateral growth of the nitride semiconductor layer are formed on at least part of the inner walls of the recessed portions to form the voids. | 02-24-2011 |
20110168908 | MICROSTRUCTURE MANUFACTURING METHOD - A microstructure manufacturing method includes forming a first insulating film on an Si substrate, exposing an Si surface by removing a part of the first insulating film, forming a recessed portion by etching the Si substrate from the exposed Si surface, forming a second insulating film on a sidewall and a bottom of the recessed portion, forming an Si exposed surface by removing at least a part of the second insulating film formed on the bottom of the recessed portion, and filling the recessed portion with a metal from the Si exposed surface by electrolytic plating. | 07-14-2011 |
20110194673 | MICROSTRUCTURE MANUFACTURING METHOD AND MICROSTRUCTURE - A microstructure manufacturing method includes: preparing a mold having on a front side thereof a plurality of fine structures, with conductivity being imparted to a bottom portion between the plurality of fine structures; forming a first plating layer between the plurality of fine structures by plating the bottom portion; and forming a second plating layer of larger stress than the first plating layer on the first plating layer between the plurality of fine structures, wherein the stress of the second plating layer is used to curve a back side surface of the mold. | 08-11-2011 |
20130162725 | LIQUID EJECTION HEAD - A liquid ejection head includes a piezoelectric block body having a plurality of pressure chambers arranged two-dimensionally to face respective ejection ports, a plurality of air chambers arranged adjacently relative to the plurality of pressure chambers, and a plurality of flow channels arranged along the pressure chambers. The pressure chambers are deformed by expansion and contraction of piezoelectric members disposed between the pressure chambers and the air chambers so as to drive the liquid stored therein to flow toward the ejection ports. A connection flow channel is provided at the ejection port side of the piezoelectric block body sp as to make each of the pressure chambers communicate with at least one of the flow channels for partial recirculation of the ink. | 06-27-2013 |
20130162727 | SUBSTRATE, LIQUID EJECTION HEAD HAVING SUCH SUBSTRATE AND METHOD OF MANUFACTURING SUCH SUBSTRATE - A substrate includes a substrate body having a semiconductor element formed thereon and at least either a recess or a protrusion formed on the surface thereof and a printed circuit formed on the substrate body and connected to the semiconductor element. At least a part of the printed circuit is formed in a region of the surface of the substrate including either the inner side surfaces of the recess or the outer side surfaces of the protrusion. | 06-27-2013 |
20130220522 | PROCESS FOR PRODUCING LIQUID EJECTION HEAD - A process for producing a liquid ejection head comprising a provision step of providing a piezoelectric substrate, and a first and a second support substrate for supporting the piezoelectric substrate; a bonding step of bonding one surface of the first support substrate to one principal surface of two principal surfaces of the piezoelectric substrate; a groove forming step of forming a groove in the other principal surface of the two principal surfaces of the piezoelectric substrate; an electrode forming step of forming a first electrode on at least one surface of a lateral surface of the groove, a bottom surface of the groove and the other principal surface remaining after the groove is formed; a joining step of joining one surface of the second support substrate to the other principal surface of the piezoelectric substrate; and a separation step of separating the first support substrate from the piezoelectric substrate. | 08-29-2013 |
20130340219 | PROCESS FOR PRODUCING LIQUID EJECTION HEAD - A process for producing a liquid ejection head having a piezoelectric body provided with an ejection orifice for ejecting liquid and a pressure chamber communicating therewith for retaining the liquid, wherein an electrode is formed on an inner wall surface of the pressure chamber to deform the pressure chamber by piezoelectric action caused by applying voltage to the electrode to eject the liquid, comprising providing the piezoelectric body in which a surface thereof having the ejection orifice has an arithmetic mean roughness of 0.1-1 μm, forming a dry film resist pattern on the surface of the piezoelectric body so as to expose the ejection orifice and a linear region connected thereto, and forming a metal thin film pattern being connected to the electrode on the inner wall surface and continuously extending from the inner wall surface to the linear region by using the dry film resist pattern as a mask. | 12-26-2013 |
20130342613 | LIQUID EJECTION HEAD AND METHOD OF MANUFACTURING THE SAME - A liquid ejection head has a plurality of pressure chambers each communicating with an ejection port at one end and with an ink supply port at the other end. Each of the pressure chamber has lateral walls formed by piezoelectric elements and configured so as to eject ink from the corresponding ejection port as a result of a capacity change of the pressure chamber due to an expansion or contraction of the piezoelectric elements. The liquid ejection head is constituted by a plate-shaped piezoelectric portion and a plurality of column-shaped piezoelectric portions arranged thereon. The plate-shaped piezoelectric portion has a plurality of holes and a plurality of through holes located around the holes. Each of the column-shaped piezoelectric portions has a hollow section. Each hole of the plate-shaped piezoelectric portion and the hollow section of the corresponding column-shaped piezoelectric portion form a pressure chamber. | 12-26-2013 |
20150072521 | MICROSTRUCTURE MANUFACTURING METHOD - A microstructure manufacturing method includes forming a first insulating film on an Si substrate, exposing an Si surface by removing a part of the first insulating film, forming a recessed portion by etching the Si substrate from the exposed Si surface, forming a second insulating film on a sidewall and a bottom of the recessed portion, forming an Si exposed surface by removing at least a part of the second insulating film formed on the bottom of the recessed portion, and filling the recessed portion with a metal from the Si exposed surface by electrolytic plating. | 03-12-2015 |