Patent application number | Description | Published |
20080308784 | VARIABLE RESISTANCE NON-VOLATILE MEMORY CELLS AND METHODS OF FABRICATING SAME - Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer. | 12-18-2008 |
20090008623 | Methods of fabricating nonvolatile memory device and a nonvolatile memory device - Methods of fabricating a nonvolatile memory device using a resistance material and a nonvolatile memory device are provided. According to example embodiments, a method of fabricating a nonvolatile memory device may include forming at least one semiconductor pattern on a substrate, forming a metal layer on the at least one semiconductor pattern, forming a mixed-phase metal silicide layer, in which at least two phases coexist, by performing at least one heat treatment on the substrate so that the at least one semiconductor pattern may react with the metal layer, and exposing the substrate to an etching gas. | 01-08-2009 |
20110049646 | Semiconductor Device and Method of Forming the Same - Methods of forming a semiconductor device include forming an insulation layer on a semiconductor structure, forming an opening in the insulation layer, the opening having a sidewall defined by one side of the insulation layer, forming a first metal layer in the opening, at least partially exposing the sidewall of the opening by performing a wet-etching process on the first metal layer, and selectively forming a second metal layer on the etched first metal layer. An average grain size of the first metal layer is smaller than an average grain size of the second metal layer. Related semiconductor devices are also disclosed. | 03-03-2011 |
20110073832 | PHASE-CHANGE MEMORY DEVICE - A phase-change memory device, including a lower electrode, a phase-change material pattern electrically connected to the lower electrode, and an upper electrode electrically connected to the phase-change material pattern. The lower electrode may include a first structure including a metal semiconductor compound, a second structure on the first structure, the second structure including a metal nitride material, and including a lower part having a greater width than an upper part, and a third structure including a metal nitride material containing an element X, the third structure being on the second structure, the element X including at least one selected from the group of silicon, boron, aluminum, oxygen, and carbon. | 03-31-2011 |
20120119181 | SEMICONDUCTOR DEVICE INCLUDING BUFFER ELECTRODE, METHOD OF FABRICATING THE SAME, AND MEMORY SYSTEM INCLUDING THE SAME - A semiconductor device includes a switching device disposed on a substrate. A buffer electrode pattern is disposed on the switching device. The buffer electrode pattern includes a first region having a first vertical thickness, and a second region having a second vertical thickness smaller than the first vertical thickness. A lower electrode pattern is disposed on the first region of the buffer electrode pattern. A trim insulating pattern is disposed on the second region of the buffer electrode pattern. A variable resistive pattern is disposed on the lower electrode pattern. | 05-17-2012 |
20130164928 | Semiconductor Device and Method for Forming the Same - Methods of forming a semiconductor device include forming an insulation layer on a semiconductor structure, forming an opening in the insulation layer, the opening having a sidewall defined by one side of the insulation layer, forming a first metal layer in the opening, at least partially exposing the sidewall of the opening by performing a wet-etching process on the first metal layer, and selectively forming a second metal layer on the etched first metal layer. An average grain size of the first metal layer is smaller than an average grain size of the second metal layer. Related semiconductor devices are also disclosed. | 06-27-2013 |
Patent application number | Description | Published |
20080230373 | METHODS OF FORMING A PHASE-CHANGE MATERIAL LAYER INCLUDING TELLURIUM AND METHODS OF MANUFACTURING A PHASE-CHANGE MEMORY DEVICE USING THE SAME - The present invention provides methods of forming a phase-change material layer including providing a substrate and a chalcogenide target including germanium (Ge), antimony (Sb) and tellurium (Te) at a temperature wherein tellurium is volatilized and antimony is not volatilized, and performing a sputtering process to form the phase-change material layer including a chalcogenide material on the substrate. Methods of manufacturing a phase-change memory device using the same are also provided. | 09-25-2008 |
20100243982 | VARIABLE RESISTANCE NON-VOLATILE MEMORY CELLS AND METHODS OF FABRICATING SAME - Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer. | 09-30-2010 |
20130082683 | POWER MEASUREMENT DEVICE - Provided is a power measurement device including a detection part configured to detect a supply current and a supply voltage from a commercial alternating current power supply, a frequency control part configured to transit a fundamental frequency by the supply current and the supply voltage to an intermediate frequency, a conversion part configured to generate a digital current value and a digital voltage value of the supply current and the supply voltage having the intermediate frequency applied from the frequency control part and transit the intermediate frequency to the fundamental frequency again, and a calculation/control part configured to calculate wattage using the digital current value and the digital voltage value, which are output signals of the conversion part. | 04-04-2013 |
20130176016 | SIGNAL CONVERTING APPARATUS OF POWER METERING SYSTEM, POWER METERING SYSTEM AND METHOD FOR SIGNAL-CONVERTING IN POWER METERING SYSTEM - The present invention relates to a signal converting apparatus of a power metering system, a power metering system and a method for signal-converting in a power metering system. In accordance with one embodiment of the present invention, there is proposed to a signal converting apparatus of a power metering system including a frequency shift unit for shifting a frequency(s) of at least one signal of sensed current and voltage signals by a shift frequency(s) so that the current and voltage signals have different frequency bandwidths, a signal coupling unit for coupling the current and voltage signals having different frequency bandwidths into one signal and an analog-digital convert unit for converting an analog signal coupled as said one signal into a digital signal(s). And also, a power metering system including the same and a method for converting a signal of the power metering system are proposed. | 07-11-2013 |
20150264237 | APPARATUS FOR DRIVING ACTUATOR OF CAMERA MODULE IN MOBILE DEVICE - Embodiments of the invention provide an apparatus for driving an actuator of a camera module in a mobile device. The apparatus includes a proportional-integral-derivative (PID) controller configured to compare an output of a gyro sensor with an output of a hall sensor configured to sense a position of an actuator to output a digital signal of plural bits, and a differential current digital-to-analog converter configured to convert the digital signal output from the PID controller into an analog current signal. The apparatus further includes a linear driver configured to receive the signal output from the differential current digital-to-analog converter to output a linear driving signal, an H-bridge circuit configured to control magnitudes of a forward driving current and a reverse driving current flowing in the actuator based on the output of the linear driver, and a driving direction controller configured to output a signal controlling a direction of current flowing in the actuator to the H-bridge circuit based on the digital signal output from the PID controller. | 09-17-2015 |
Patent application number | Description | Published |
20150287907 | MAGNETIC MEMORY DEVICES - Magnetic memory devices include a plurality of first magnetic patterns on a substrate so as to be spaced apart from each other, a first insulating pattern between the first magnetic patterns to define the first magnetic patterns, and a tunnel barrier layer covering the first magnetic patterns and the first insulating pattern. The first insulating pattern includes a first magnetic element, and the first magnetic element is the same as a second magnetic element constituting the first magnetic patterns. | 10-08-2015 |
20150287912 | MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - In a method of manufacturing an MRAM device, a lower electrode and a preliminary first free layer pattern sequentially stacked are formed on a substrate. An upper portion of the preliminary first free layer pattern is removed to form a first free layer pattern. A second free layer and a tunnel barrier layer are sequentially formed on the first free layer pattern. The second free layer is partially oxidized to form a second free layer pattern. A fixed layer structure is formed on the tunnel barrier layer. | 10-08-2015 |
20160035969 | MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a magnetic memory device is provided. The method may include sequentially forming a first magnetic layer, a tunnel barrier layer, and a second magnetic layer on a substrate, forming a mask pattern on the second magnetic layer to expose a portion of the second magnetic layer, forming a capping insulating layer on a sidewall of the mask pattern and the portion of the second magnetic layer, injecting an oxygen ion into the portion of the second magnetic layer through the capping insulating layer to form an oxide layer, anisotropically etching the capping insulating layer to form a capping spacer, and patterning the oxide layer, the tunnel barrier layer, and the first magnetic layer using the mask pattern and the capping spacer. | 02-04-2016 |
Patent application number | Description | Published |
20080225797 | Method and Apparatus for Optimizing Neighbor List Automatically in Synchronous Cdma Network - A method for automatically optimizing a neighbor list for processing handover in a synchronous CDMA (Code Division Multiple Access) network includes the steps of: collecting neighbor list data, call fault data, handover statistical data, base station location data and PN information data of each base station sector in a nationwide network; extracting all target sectors available for handover by analyzing the collected data; endowing a weighting factor to the extracted target sectors according to importance and then sorting the target sectors according to calculated results so as to determine priorities; and subsequently inputting the target sector information to the neighbor list according to the priorities. | 09-18-2008 |
20080227455 | Method and Apparatus For Optimizing Neighbor List Automatically in Asynchronous Wcdma Network - A method for automatically optimizing a neighbor list for processing handover in an asynchronous WCDMA (Wide-band Code Division Multiple Access) network includes the steps of: collecting neighbor list data, call fault data, handover statistical data, base station location data and PSC information data of each base station sub-cell (or, sector) in a nationwide network; extracting all target sub-cells (or, sectors) available for handover by analyzing the collected data; endowing a weighting factor to the extracted target sub-cells (or, sectors) according to importance and then sorting calculated results so as to determine priorities; and subsequently inputting the target sub-cell (or, sector) information to the neighbor list according to the priorities. | 09-18-2008 |
20090036116 | METHOD AND SYSTEM FOR MEASURING QUALITY OF WIRELESS NETWORK - The present invention relates to a method for measuring quality of a wireless network of a mobile communication system and a system therefor, and the method for measuring quality of a wireless network according to the present invention includes a wireless quality analysis server requesting a location service about a specific subscriber terminal to a mobile switching center; the mobile switching center transmitting a location report request about the subscriber terminal to a radio network controller; the radio network controller transmitting a wireless quality measurement request to the subscriber terminal based on the location report request; the radio network controller receiving a wireless quality measurement report from the subscriber terminal; and the radio network controller extracting data for wireless quality measurement from the wireless quality measurement report and transmitting the data to the wireless quality analysis server. | 02-05-2009 |
20090125220 | METHOD AND SYSTEM FOR MEASURING TRAFFIC INFORMATION IN CDMA NETWORK - A method for measuring traffic information, conducted by a traffic information analyzing device interworking with a radio operating device connected to BSS (Base Station Subsystem) of a synchronous CDMA (Code Division Multiple Access) network or RNC (Radio Network Controller) of an asynchronous WCDMA (Wideband Division Multiple Access) network, includes acquiring a location information message of MS (Mobile Station), which is provided from the BSS or RNC and stored in the radio operating device; analyzing location information of the MS by utilizing the location information message; and calculating traffic information of the MS including a moving speed of each measurement region by using the analyzed location information. | 05-14-2009 |
20120064892 | SYSTEM AND METHOD FOR OBTAINING IDENTITY NUMBER OF USER EQUIPMENT IN AN LTE SYSTEM - System and method for obtaining identity number of user equipment in an LTE system. An identity number of a user equipment may be obtained at an eNodeB in an LTE network having an MME. In order to obtain the identity number, the eNodeB may receive a first message from the user equipment and extract a first part of an identity number of the user equipment from the received first message. The eNodeB may receive a second message from the MME and extract a second part of the identity number of the user equipment from the second message. The eNodeB may form the identity number of user equipment by combining the extracted first part of the identity number with the extracted second part of the identity number. | 03-15-2012 |