Patent application number | Description | Published |
20110199476 | METROLOGY SYSTEM FOR IMAGING WORKPIECE SURFACES AT HIGH ROBOT TRANSFER SPEEDS - A metrology system has an elongate stationary camera pixel array facing a workpiece transit path of a robot with an field of view corresponding to a workpiece diameter and extending transverse to the transit path portion, and a stationary elongate light emitting array generally parallel to the pixel array. An image control processor causes the camera to capture successive image frames while the, robot is moving the workpiece through the transit path. | 08-18-2011 |
20110199477 | METHOD FOR IMAGING WORKPIECE SURFACES AT HIGH ROBOT TRANSFER SPEEDS WITH REDUCTION OR PREVENTION OF MOTION-INDUCED DISTORTION - A method is provided for imaging a workpiece by capturing successive frames of an elongate stationary field of view transverse to a workpiece transit path of a robot, while the workpiece is transported by the robot. The robot transit path is illuminated with an elongate illumination pattern transverse to the transit path to obtain a workpiece image of successive frames. Motion-induced image distortion is prevented or reduced adjusting the camera frame rate in real time in proportion to changes in robot velocity profile of the workpiece along the transit path. | 08-18-2011 |
20110200247 | METHOD FOR IMAGING WORKPIECE SURFACES AT HIGH ROBOT TRANSFER SPEEDS WITH CORRECTION OF MOTION-INDUCED DISTORTION - A method is provided for imaging a workpiece by capturing successive frames of an elongate stationary field of view transverse to a workpiece transit path of a robot, while the workpiece is transported by the robot. The robot transit path is illuminated with an elongate illumination pattern transverse to the transit path to obtain a workpiece image of successive frames. Motion-induced image distortion is corrected by computing respective correct locations of respective ones of the frames along the transit path. | 08-18-2011 |
20120322240 | DAMAGE ISOLATION BY SHAPED BEAM DELIVERY IN LASER SCRIBING PROCESS - Methods and apparatuses for dicing substrates by both laser scribing and plasma etching. A method includes laser ablating material layers, the ablating by a laser beam with a centrally peaked spatial power profile to form an ablated trench in the substrate below thin film device layers which is positively sloped. In an embodiment, a femtosecond laser forms a positively sloped ablation profile which facilitates vertically-oriented propagation of microcracks in the substrate at the ablated trench bottom. With minimal lateral runout of microcracks, a subsequent anisotropic plasma etch removes the microcracks for a cleanly singulated chip with good reliability. | 12-20-2012 |
20120322241 | MULTI-LAYER MASK FOR SUBSTRATE DICING BY LASER AND PLASMA ETCH - Methods of dicing substrates having a plurality of ICs. A method includes forming a multi-layered mask comprising a first mask material layer soluble in a solvent over the semiconductor substrate and a second mask material layer, insoluble in the solvent, over the first mask material layer. The multi-layered mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then plasma etched through the gaps in the patterned mask to singulate the IC with the second mask material layer protecting the first mask material layer for at least a portion of the plasma etch. The soluble material layer is dissolved subsequent to singulation to remove the multi-layered mask. | 12-20-2012 |
20130095579 | METHOD AND APPARATUS FOR THE FORMATION OF SOLAR CELLS WITH SELECTIVE EMITTERS - Methods and apparatus for forming solar cells with selective emitters are provided. A method includes positioning a substrate on a substrate receiving surface. The substrate has a surface comprising a first patterned heavily doped region having a first dopant concentration that defines the selective emitters, and a second doped emitter region having a second dopant concentration that is less than the first dopant concentration, wherein the second doped emitter region surrounds the first patterned heavily doped region. The method further comprises determining a position of the first patterned heavily doped region by using a Fourier transform to process a filtered optical image, aligning one or more distinctive elements in a screen printing mask with the first patterned heavily doped region by using information received from the determined position of the first patterned heavily doped region, and depositing a layer of material on a portion of the first patterned heavily doped region. | 04-18-2013 |
20130280890 | LASER AND PLASMA ETCH WAFER DICING USING UV-CURABLE ADHESIVE FILM - Laser and plasma etch wafer dicing using UV-curable adhesive films is described. In an example, a method includes forming a mask above the semiconductor wafer. The semiconductor wafer is coupled to a carrier substrate by a UV-curable adhesive film. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The UV-curable adhesive film is then irradiated with ultra-violet (UV) light. The singulated integrated circuits are then detached from the carrier substrate. | 10-24-2013 |
20140004685 | LASER AND PLASMA ETCH WAFER DICING WITH A DOUBLE SIDED UV-CURABLE ADHESIVE FILM | 01-02-2014 |
20140015109 | METHOD OF DICED WAFER TRANSPORTATION - Methods of dicing semiconductor wafers, and transporting singulated die, are described. In an example, a method of dicing a wafer having a plurality of integrated circuits thereon involves dicing the wafer into a plurality of singulated dies disposed above a dicing tape. The method also involves forming a water soluble material layer over and between the plurality of singulated dies, above the dicing tape. | 01-16-2014 |
20140017879 | UNIFORM MASKING FOR WAFER DICING USING LASER AND PLASMA ETCH - Uniform masking for wafer dicing using laser and plasma etch is described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits having bumps or pillars includes uniformly spinning on a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits. | 01-16-2014 |
20140017882 | METHOD OF COATING WATER SOLUBLE MASK FOR LASER SCRIBING AND PLASMA ETCH - Methods of using a hybrid mask composed of a first water soluble film layer and a second water-soluble layer for wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a hybrid mask above the semiconductor wafer. The hybrid mask is composed of a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer. The method also involves patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also involves etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits. | 01-16-2014 |
20140106542 | LASER AND PLASMA ETCH WAFER DICING WITH PARTIAL PRE-CURING OF UV RELEASE DICING TAPE FOR FILM FRAME WAFER APPLICATION - Methods and systems of laser and plasma etch wafer dicing using UV-curable adhesive films. A method includes forming a mask covering ICs formed on the wafer. The semiconductor wafer is coupled to a film frame by a UV-curable adhesive film. A pre-cure of the UV-curable adhesive film cures a peripheral portion of the adhesive extending beyond an edge of the wafer to improve the exposed adhesive material's resistance to plasma etch and reduce hydrocarbon redeposition within the etch chamber. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is plasma etched through the gaps in the patterned mask to singulate the ICs. A center portion of the UV-curable adhesive is then cured and the singulated ICs detached from the film. | 04-17-2014 |
20140118751 | PECVD PROCESS - A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants. | 05-01-2014 |
20140251375 | METHODS AND APPARATUS FOR SUBSTRATE EDGE CLEANING - A substrate cleaning apparatus may include a substrate support having a support surface to support a substrate to be cleaned, wherein the substrate support is rotatable about a central axis normal to the support surface; a first nozzle to provide a first cleaning gas to a region of the inner volume corresponding to the position of an edge of the substrate when the substrate is supported by the support surface of the substrate support; a first annular body disposed opposite and spaced apart from the support surface of the substrate support by a gap, the first annular body having a central opening defined by an inner wall shaped to provide a reducing size of the gap between the first annular body and the support surface in a radially outward direction; and a first gas inlet to provide a first gas to the central opening of the first annular body. | 09-11-2014 |
20140377937 | METHOD OF COATING WATER SOLUBLE MASK FOR LASER SCRIBING AND PLASMA ETCH - Methods of using a hybrid mask composed of a first water soluble film layer and a second water-soluble layer for wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a hybrid mask above the semiconductor wafer. The hybrid mask is composed of a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer. The method also involves patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also involves etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits. | 12-25-2014 |
20150102467 | METHOD OF DICED WAFER TRANSPORTATION - Methods of dicing semiconductor wafers, and transporting singulated die, are described. In an example, a method of dicing a wafer having a plurality of integrated circuits thereon involves dicing the wafer into a plurality of singulated dies disposed above a dicing tape. The method also involves forming a water soluble material layer over and between the plurality of singulated dies, above the dicing tape. | 04-16-2015 |
20150122419 | LASER AND PLASMA ETCH WAFER DICING WITH A DOUBLE SIDED UV-CURABLE ADHESIVE FILM - Laser and plasma etch wafer dicing using UV-curable adhesive films. A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a carrier substrate by a double-sided UV-curable adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the ICs. The UV-curable adhesive film is partially cured by UV irradiation through the carrier. The singulated ICs are then detached from the partially cured adhesive film still attached to the carrier substrate, for example individually by a pick and place machine. The UV-curable adhesive film may then be further cured for the film's complete removal from the carrier substrate. | 05-07-2015 |
20150203966 | MEASUREMENT OF FILM THICKNESS ON AN ARBITRARY SUBSTRATE - Embodiments of the present disclosure enable measurement of film properties, such as thickness, using reflectometry regardless of the underlying pattern on the substrate or base layer because the amount of phase shift resulting from the growing film at any wavelength is independent of the substrate or base layer. One embodiment of the method includes determining properties of the substrate from a time series data. Another embodiment of the method includes removing a plasma background for measuring data by making two consecutive measurement with a light source on and off respectively. Another embodiment includes determining a deposition start time by monitoring a plasma marker or a phase shift of optical properties. | 07-23-2015 |
20150217401 | DAMAGE ISOLATION BY SHAPED BEAM DELIVERY IN LASER SCRIBING PROCESS - Methods and apparatuses for dicing substrates by both laser scribing and plasma etching. A method includes laser ablating material layers, the ablating by a laser beam with a centrally peaked spatial power profile to form an ablated trench in the substrate below thin film device layers which is positively sloped. In an embodiment, a femtosecond laser forms a positively sloped ablation profile which facilitates vertically-oriented propagation of microcracks in the substrate at the ablated trench bottom. With minimal lateral runout of microcracks, a subsequent anisotropic plasma etch removes the microcracks for a cleanly singulated chip with good reliability. | 08-06-2015 |
20150226540 | PECVD APPARATUS AND PROCESS - Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants. | 08-13-2015 |
20150376782 | Wafer Placement And Gap Control Optimization Through In Situ Feedback - Apparatus and methods of dimension control and monitoring between a processes fixture and a susceptor, and position determination of wafers are described. | 12-31-2015 |
20160035577 | MULTI-LAYER MASK INCLUDING NON-PHOTODEFINABLE LASER ENERGY ABSORBING LAYER FOR SUBSTRATE DICING BY LASER AND PLASMA ETCH - Methods of dicing substrates having a plurality of ICs. A method includes forming a multi-layered mask comprising a laser energy absorbing, non-photodefinable topcoat disposed over a water-soluble base layer disposed over the semiconductor substrate. Because the laser light absorbing material layer is non-photodefinable, material costs associated with conventional photo resist formulations may be avoided. The mask is direct-write patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. Absorption of the mask layer within the laser emission band (e.g., UV band and/or green band) promotes good scribe line quality. The substrate may then be plasma etched through the gaps in the patterned mask to singulate the IC with the mask protecting the ICs during the plasma etch. The soluble base layer of the mask may then be dissolved subsequent to singulation, facilitating removal of the layer. | 02-04-2016 |
Patent application number | Description | Published |
20090024241 | DUAL-MODE ROBOT SYSTEMS AND METHODS FOR ELECTRONIC DEVICE MANUFACTURING - Electronic device manufacturing systems and methods are provided. In some aspects, a system having a dual-mode robot is provided which is disposed within a system component (e.g., a factory interface or transfer chamber) and adapted to operate in a first mode and a second mode. In the first mode, the robot may transfer a substrate between components of the system (e.g., between a carrier and a process chamber or chamber to chamber) and in the second mode, the robot may execute a process motion profile (e.g., metrology). | 01-22-2009 |
20090126851 | DIE-TO-ROBOT ALIGNMENT FOR DIE-TO-SUBSTRATE BONDING - A method, a system and a computer readable medium having a set of instructions stored thereon for die-to-robot alignment for die-to-substrate bonding are described. First, a robot is aligned with a substrate to provide a pre-aligned robot. Next, a die is aligned with the pre-aligned robot to provide a robot-aligned die. Finally, the robot-aligned die is bonded to a region of the substrate. The substrate is held stationary immediately following the aligning of the robot with the substrate and at least until the robot-aligned die is bonded to the region of the substrate. | 05-21-2009 |
20090130821 | THREE DIMENSIONAL PACKAGING WITH WAFER-LEVEL BONDING AND CHIP-LEVEL REPAIR - A method, a system and a computer readable medium for three dimensional packaging with wafer-level bonding and chip-level repair. A first wafer is provided having a first plurality of chips. A second wafer is provided having a second plurality of chips. At least one chip is removed from the second wafer while retaining the relative alignment of the remaining chips in the second wafer. The first and second wafers are aligned and joined with wafer-to-wafer techniques. Where a bad chip having a relative physical position within the second wafer corresponding to a relative physical position within the first wafer of a good chip is removed, a good chip may be aligned and bonded to the first wafer using die-to-wafer techniques. | 05-21-2009 |
20100103411 | SPECTROGRAPHIC METROLOGY OF PATTERNED WAFERS - Light reflected from respective image elements of a workpiece is channeled through respective light channeling elements to respective locations of a spectrographic light disperser. Spectral distributions of the respective image elements produced by the spectrographic light disperser are recorded. A processor groups similar spectral distributions into respective groups of mutually similar distributions, and classifies the groups by the number of distributions contained in each group. | 04-29-2010 |
20120322239 | HYBRID LASER AND PLASMA ETCH WAFER DICING USING SUBSTRATE CARRIER - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The semiconductor wafer is supported by a substrate carrier. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits while supported by the substrate carrier. | 12-20-2012 |
20140117982 | FILM MEASUREMENT - In one embodiment, a sample is tested by an eddy current sensor at two distances separated by a known incremental distance. In one aspect, at least one of an unknown distance of the sensor from the test sample and the film thickness of the test sample may be determined as a function of a comparison of sensor output levels of a single parameter and the known incremental distance to calibration data. In yet another aspect, the distance between the sensor and the test sample may oscillated to produce an oscillating sensor output signal having an amplitude and mean which may be measured and compared to calibration data to identify at least one of the unknown film thickness of a conductive film on a test sample, and the unknown distance of the test sample from the sensor. Other aspects and features are also described. | 05-01-2014 |
20140144585 | HYBRID LASER AND PLASMA ETCH WAFER DICING USING SUBSTRATE CARRIER - Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The semiconductor wafer is supported by a substrate carrier. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits while supported by the substrate carrier. | 05-29-2014 |
20140260624 | ACOUSTICALLY-MONITORED SEMICONDUCTOR SUBSTRATE PROCESSING SYSTEMS AND METHODS - A semiconductor substrate processing system having acoustic monitoring is disclosed. The system includes a process chamber adapted to perform a process on a substrate, a process fluid source, a fluid conduit coupling the fluid source to the process chamber, and a flow control valve located along the fluid conduit and adapted to be operable to control a flow of a process fluid between the process fluid source and the process chamber. The system includes one or more acoustic sensors operable to sense acoustic noise coupled to at least one of the process fluid source, the fluid conduit, and the flow control valve, and an acoustic processor adapted to receive at least one signal from the one or more acoustic sensors. Acoustic monitoring methods are provided, as are other aspects. | 09-18-2014 |
20140367265 | NON-CONTACT SHEET RESISTANCE MEASUREMENT OF BARRIER AND/OR SEED LAYERS PRIOR TO ELECTROPLATING - A measurement tool for measuring an electrical parameter of a metal film deposited on a front side of a workpiece includes an electrical sensor connected to a workpiece contact point, an energy beam source with a beam impact location on the front side, a holder and a translation mechanism capable of translating the holder relative to the workpiece support, the beam source supported on the holder, and a computer programmed to sense a behavior of an electrical parameter sensed by the sensor. | 12-18-2014 |
20140367266 | FAST AND CONTINUOUS EDDY-CURRENT METROLOGY OF A CONDUCTIVE FILM - A measurement tool includes a rotation stage supporting an workpiece support, a thickness sensor overlying a workpiece support surface; a translation actuator coupled to the thickness sensor for translation of the thickness sensor relative to the workpiece support surface; and a computer coupled to control the rotation actuator and the translation actuator, and coupled to receive an output of the thickness sensor. | 12-18-2014 |
20140367267 | ELECTROPLATING TOOL WITH FEEDBACK OF METAL THICKNESS DISTRIBUTION AND CORRECTION - An electroplating reactor includes an electro-plating solution in a bath, a ring cathode in the bath and located to contact a workpiece such that only the front side of the workpiece is immersed in the solution, plural anodes immersed in the bath below the ring cathode, and plural anode voltage sources coupled to the plural anodes; plural thickness sensors at spatially separate locations on the back side of the workpiece with feedback control to the anode voltage sources. | 12-18-2014 |
20160007412 | APPARATUS, SYSTEMS, AND METHODS FOR TEMPERATURE CONTROL OF SUBSTRATES USING EMBEDDED FIBER OPTICS AND EPOXY OPTICAL DIFFUSERS - Substrate temperature control apparatus and electronic device manufacturing systems provide pixelated light-based heating to a substrate in a process chamber. A substrate holder in the process chamber may include a baseplate. The baseplate has a top surface that may have a plurality of cavities and a plurality of grooves connected to the cavities. Optical fibers may be received in the grooves such that each cavity has a respective optical fiber terminating therein to transfer light thereto. Some or all of the cavities may have an epoxy optical diffuser disposed therein to diffuse light provided by the optical fiber. A ceramic plate upon which a substrate may be placed may be bonded to the baseplate. A thermal spreader plate may optionally be provided between the baseplate and the ceramic plate. Methods of controlling temperature across a substrate holder in an electronic device manufacturing system are also provided, as are other aspects. | 01-07-2016 |