Patent application number | Description | Published |
20080280386 | METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE - A method for manufacturing an laser diode includes: providing a wafer having thereon a semiconductor structure; depositing an SiO | 11-13-2008 |
20080293176 | METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE - A method for manufacturing a semiconductor optical device includes: forming a first resist pattern on top surface of a laminated semiconductor structure; forming channels and a waveguide ridge by dry etching using the first resist pattern as a mask; forming an SiO | 11-27-2008 |
20080311694 | METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE | 12-18-2008 |
20090170225 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - A method for manufacturing a semiconductor light emitting device includes forming an insulating film on a semiconductor substrate, the insulating film having an opening therein, forming a Pd electrode in the opening and on the insulating film, and removing the portion of the Pd electrode on the insulating film by the application of a physical force to the portion, while leaving the Pd electrode in the opening. | 07-02-2009 |
20090184336 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor light emitting device includes: a semiconductor layer; an insulating film on the semiconductor layer and having an opening; a multilayer adhesive layer on the insulating film; and a Pd electrode in contact with the semiconductor layer through the opening and in contact with the multilayer adhesive layer. The multilayer adhesive layer includes an Au layer at the top and an alloy of Au and Pd at the interface between the Au layer and the Pd electrode. | 07-23-2009 |
20100219438 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting device comprises: a semiconductor substrate; a semiconductor layer structure on the semiconductor substrate, including an active layer and a waveguide ridge; an electrode in contact with all of a top surface of the waveguide ridge; and an insulating film coating side faces of the waveguide ridge, side faces of the electrode, and ends, but not a center portion, of an upper face of the electrode. | 09-02-2010 |
20100244074 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor light-emitting device and a manufacturing method are provided, in which a metal film is deposited with positional differences between edges of an insulating film and the metal film, opposite a ridge waveguide top face, utilizing an overhanging-shaped resist pattern. An opening through the insulating film is extended in width without another masking step by etching the insulation film on the ridge waveguide top face, using the metal film as a mask. The contact area between a p-side electrode and a p-type contact layer is increased and operating voltage of the semiconductor light-emitting device is reduced. | 09-30-2010 |
20110193126 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting element comprises: a semiconductor substrate; a semiconductor laminated structure including a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, and a contact layer that are sequentially laminated on the semiconductor substrate; a ridge portion in an upper portion of the semiconductor laminated structure; a channel portion adjoining opposite sides of the ridge portion; a terrace portion adjoining opposite sides of the channel portion and, with the channel portion, sandwiching the ridge portion; a first insulating film covering the channel portion and having openings on the ridge portion and the terrace portion; a single-layer adhesive layer on the first insulating film; a Pd electrode on the ridge portion and a part of the single-layer adhesive layer and electrically connected to the contact layer of the ridge portion; and a second insulating layer covering a portion not covered by the Pd electrode of the single-layer adhesive layer, and the terrace portion. | 08-11-2011 |