Patent application number | Description | Published |
20080203574 | INSULATING FILM MATERIAL, MULTILAYER INTERCONNECTION STRUCTURE, METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide an insulating film material that can be advantageously used for forming an insulating film having a low dielectric constant and excellent resistance to damage, such as etching resistance and resistance to liquid reagents, a multilayer interconnection structure in which a parasitic capacitance between the interconnections can be reduced, efficient methods for manufacturing the multilayer interconnection structure, and an efficient method for manufacturing a semiconductor device with a high speed and reliability. The insulating film material contains at least a silicon compound having a steric structure represented by Structural Formula (1) below. | 08-28-2008 |
20090038833 | SILICON COMPOUND, ULTRAVIOLET ABSORBENT, METHOD FOR MANUFACTURING MULTILAYER WIRING DEVICE AND MULTILAYER WIRING DEVICE - A layer of a porous insulating film precursor is formed on or over a substrate, a layer of a specific silicon compound is then formed, this silicon compound layer is pre-cured as necessary, and the porous insulating film precursor is exposed to UV through the silicon compound layer or pre-cured layer. | 02-12-2009 |
20090061633 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - According to an aspect of an embodiment, a method of manufacturing a semiconductor device has forming an insulating layer comprising silica-based insulating material, processing the insulating layer, hydrophobizing the insulating layer by applying a silane compound to act on the insulating layer; and irradiating the insulating layer with light or an electron beam. | 03-05-2009 |
20090163039 | Composition for forming insulating film and method for fabricating semiconductor device - A method for fabricating a semiconductor device utilizing the step of forming a first insulating film of a porous material over a substrate; the step of forming on the first insulating film a second insulating film containing a silicon compound containing Si—CH | 06-25-2009 |
20100007031 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching. | 01-14-2010 |
20100133692 | PROCESS FOR PRODUCING SILICIC COATING, SILICIC COATING AND SEMICONDUCTOR DEVICE - A silicic coating of 2.4 g/cm | 06-03-2010 |
20100140807 | INSULATING FILM MATERIAL, MULTILAYER WIRING BOARD AND PRODUCTION METHOD THEREOF, AND SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - An insulating film material, which contains a polycarbosilane compound expressed by the following structural formula 1; | 06-10-2010 |
20100176496 | MATERIAL FOR FORMING EXPOSURE LIGHT-BLOCKING FILM, MULTILAYER INTERCONNECTION STRUCTURE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE - To provide a material for forming an exposure light-blocking film which includes at least one of a silicon compound expressed by the following structural formula (1) and a silicon compound expressed by the following structural formula (2), wherein at least one of R | 07-15-2010 |
20100320618 | INTERCONNECTION SUBSTRATE, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE - An interconnection substrate including: a first insulating film made of a silicon compound, an adhesion enhancing layer formed on the first insulating film, and a second insulting film made of a silicon compound and formed on the adhesion enhancing layer, wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below: | 12-23-2010 |
20110068471 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in. | 03-24-2011 |
20120091522 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a first semiconductor layer formed over a substrate, a second semiconductor layer formed over the first semiconductor layer, a source electrode and a drain electrode formed over the second semiconductor layer, an insulating film formed over the second semiconductor layer, a gate electrode formed over the insulating film, and a protection film covering the insulating film, the protection film being formed by thermal CVD, thermal ALD, or vacuum vapor deposition. | 04-19-2012 |
20120139630 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - On a surface of a compound semiconductor layer including inner wall surfaces of an electrode trench, an etching residue | 06-07-2012 |
20120205662 | SEMICONDUCTOR DEVICE, POWER SUPPLY DEVICE, AMPLIFIER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor layer formed over a substrate; an insulating film formed over the semiconductor layer; and an electrode formed over the insulating film, wherein the insulating film includes an amorphous film including carbon. | 08-16-2012 |
20120205663 | SEMICONDUCTOR DEVICE, POWER-SUPPLY UNIT, AMPLIFIER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device, includes a semiconductor layer formed above a substrate; an insulating film formed on the semiconductor layer; and an electrode formed on the insulating film. The insulating film has a membrane stress at a side of the semiconductor layer lower than a membrane stress at a side of the electrode. | 08-16-2012 |
20120220105 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE - A method of manufacturing a semiconductor device includes: holding a semiconductor substrate with a surface inclined with respect to the vertical direction and the horizontal direction; and immersing the semiconductor substrate in a cleaning solution including an acid. | 08-30-2012 |
20120238104 | ETCHING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ETCHING DEVICE - An etching method includes: applying a radiation to an etching aqueous solution; and etching a material to be etched by using the etching aqueous solution irradiated with the radiation. | 09-20-2012 |
20120325920 | FORMING METHOD OF INTERCONNECTION STRUCTURE, FABRICATION METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A method of forming an interconnection structure includes forming an opening in an insulation film by a dry etching process that uses an etching gas containing fluorine; cleaning a bottom surface and a sidewall surface of the opening by exposing to a superheated steam; covering the bottom surface and the sidewall surface of the opening with a barrier metal film; depositing a conductor film on the insulation film via the barrier metal film to fill the opening with the conductor film; forming an interconnection pattern by the conductor film in the opening by polishing the conductor film and the barrier metal film underneath the conductor film by a chemical mechanical polishing process until a surface of the insulation film is exposed. | 12-27-2012 |
20130240896 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device may form a nitride semiconductor layer on a substrate, form a first insulator layer on the nitride semiconductor layer by steam oxidation of ALD, form a second insulator layer on the first insulator layer by oxygen plasma oxidation of ALD, form a gate electrode on the second insulator layer, and form a source and drain electrodes on the nitride semiconductor layer. The nitride semiconductor layer may include a first semiconductor layer on the substrate, and a second semiconductor layer on the first semiconductor layer. | 09-19-2013 |
20130256693 | SEMICONDUCTOR DEVICE, POWER-SUPPLY UNIT, AMPLIFIER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device, includes a semiconductor layer formed above a substrate; an insulating film formed on the semiconductor layer; and an electrode formed on the insulating film. The insulating film has a membrane stress at a side of the semiconductor layer lower than a membrane stress at a side of the electrode. | 10-03-2013 |
20130306102 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE - A method of manufacturing a semiconductor device includes: holding a semiconductor substrate with a surface inclined with respect to the vertical direction and the horizontal direction; and immersing the semiconductor substrate in a cleaning solution including an acid. | 11-21-2013 |
20140090782 | ETCHING METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An etching method includes: applying a radiation to an etching aqueous solution; and etching a material to be etched by using the etching aqueous solution irradiated with the radiation. | 04-03-2014 |