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Yoshiaki ASAO
SAGAMIHARA-SHI, JP
1. 20080239782 SEMICONDUCTOR MEMORY DEVICE - includes a bit line which is provided above a semiconductor substrate and runs in a first direction 10-02-20082. 20080206895 MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME 08-28-2008
3. 20080203503 MAGNETIC RANDOM ACCESS MEMORY - includes a first bit line and a second bit line a source line formed for a group having the first bit line and the 08-28-2008