Patent application number | Description | Published |
20110129986 | NITROGEN-PLASMA SURFACE TREATMENT IN A DIRECT BONDING METHOD - Two plates, each comprising a thin layer of silicon or silicon oxide at a surface thereof, are bonded by subjecting the thin layer of at least one of the plates to a surface treatment step forming a silicon oxynitride superficial thin film with a thickness of less than 5 nm. The thin film is performed with a nitrogen-based plasma generated by an inductively coupled plasma source. Furthermore, a potential difference applied between the plasma and a substrate holder supporting said plate during the surface treatment step is less than 50 V, advantageously less than 15 V and preferably zero. This enables a defect-free bonding interface to be obtained irrespective of a temperature of any heat treatment carried out after a contacting step between the respective thin layers of the two plates. | 06-02-2011 |
20150055122 | SYSTEM FOR MEASURING A SPACING ZONE IN A SUBSTRATE - This system for measuring the propagation of a zone of separation between a first portion and a second portion of at least one substrate includes: a module for emitting at least two incident beams each of which illuminates a separate point on the substrate, the at least two incident beams being able to pass through the first portion and the zone of separation and meet the second portion in such a way that each of them generates at least one first emergent beam Fe originating from the interface between the first portion and the zone of separation, and at least one second emergent beam originating from the interface between the zone of separation and the second portion; a detecting module for detecting light intensity values resulting from interference between the first and second emergent beams; and a computer for determining the conditions of the propagation of the zone of separation. | 02-26-2015 |
20150079759 | Process for Bonding in an Atmosphere of a Gas Having a Negative Joule-Thomson Coefficient - The present invention relates to a process for direct bonding two substrates, comprising at least: (a) bringing the surfaces to be bonded of said substrates in close contact; and (b) propagating a bonding wave between said substrates, characterised in that said substrates are kept, during step (b), in an atmosphere of a gas having a negative Joule-Thomson coefficient at the temperature and pressure of said atmosphere. | 03-19-2015 |