Inventors list |
Agents list |
Assignees list |
List by place |
Classification tree browser |
Top 100 Inventors |
Top 100 Agents |
Top 100 Assignees |
Leonard Forbes
CORVALLIS, OR US
1. 20090256181 MEMORY ARRAY WITH ULTRA-THIN ETCHED PILLAR SURROUND GATE ACCESS TRANSISTORS AND BURIED DATA/BIT LINES 10-15-20092. 20090236650 TANTALUM LANTHANIDE OXYNITRIDE FILMS - Electronic apparatus and methods of forming the electronic apparatus include a tantalum lanthanide oxynitride 09-24-2009
3. 20090218612 MEMORY UTILIZING OXIDE-CONDUCTOR NANOLAMINATES 09-03-2009
4. 20090218611 HIGH DENSITY STEPPED, NON-PLANAR FLASH MEMORY 09-03-2009
5. 20090218566 LOCALIZED COMPRESSIVE STRAINED SEMICONDUCTOR 09-03-2009
6. 20090207641 NOVEL TRANSMISSION LINES FOR CMOS INTEGRATED CIRCUITS 08-20-2009
7. 20090200602 COMBINED VOLATILE AND NON-VOLATILE MEMORY DEVICE WITH GRADED COMPOSITION INSULATOR STACK 08-13-2009
8. 20090191677 MEMORY ARRAY WITH SURROUNDING GATE ACCESS TRANSISTORS AND CAPACITORS WITH GLOBAL AND STAGGERED LOCAL BIT LINES 07-30-2009
9. 20090191676 FLASH MEMORY HAVING A HIGH-PERMITTIVITY TUNNEL DIELECTRIC 07-30-2009
10. 20090173979 ALD OF AMORPHOUS LANTHANIDE DOPED TiOX FILMS 07-09-2009
11. 20090167332 ELECTRICAL PROBE - Methods, devices, and systems for probing electrical circuits without loading the circuits are described herein 07-02-2009
12. 20090155976 ATOMIC LAYER DEPOSITION OF DY-DOPED HFO2 FILMS AS GATE DIELECTRICS 06-18-2009
13. 20090155966 DRAM WITH NANOFIN TRANSISTORS - One aspect of the present subject matter relates to a memory 06-18-2009
14. 20090152620 ATOMIC LAYER DEPOSITION OF GdScO3 FILMS AS GATE DIELECTRICS 06-18-2009
15. 20090146200 MAGNESIUM-DOPED ZINC OXIDE STRUCTURES AND METHODS 06-11-2009
16. 20090137067 METHOD FOR FORMING AN INDUCTOR - spiral inductor fabricated above a semiconductor substrate provides a large inductance while occupying only a small 05-28-2009
17. 20090134499 ATOMIC LAYER DEPOSITION OF Hf3N4/HfO2 FILMS AS GATE DIELECTRICS 05-28-2009
18. 20090128195 INTEGRATED CIRCUIT COMPARATOR OR AMPLIFIER 05-21-2009
19. 20090127592 FIN-JFET - Methods, devices, and systems integrating Fin-JFETs and Fin-MOSFETs are provided 05-21-2009
20. 20090108363 STRAINED SEMICONDUCTOR, DEVICES AND SYSTEMS AND METHODS OF FORMATION 04-30-2009
21. 20090090950 SEMICONDUCTOR DEVICES - Methods, devices, modules, and systems providing semiconductor devices in a stacked wafer system are described herein 04-09-2009
22. 20090073782 SYSTEM, APPARATUS, AND METHOD TO INCREASE READ AND WRITE STABILITY OF SCALED SRAM MEMORY CELLS 03-19-2009
23. 20090072303 NROM MEMORY CELL, MEMORY ARRAY, RELATED DEVICES AND METHODS 03-19-2009
24. 20090046504 DRAM TUNNELING ACCESS TRANSISTOR - In one embodiment a first transistor is comprised of a first p+ source region doped in an n-well in the substrate and 02-19-2009
25. 20090042360 STRAINED SEMICONDUCTOR BY FULL WAFER BONDING 02-12-2009
26. 20090040810 SWITCHED CAPACITOR DRAM SENSE AMPLIFIER WITH IMMUNITY TO MISMATCH AND OFFSETS 02-12-2009
27. 20090032910 DIELECTRIC STACK CONTAINING LANTHANUM AND HAFNIUM 02-05-2009
28. 20090014783 ULTRA-THIN BODY VERTICAL TUNNELING TRANSISTOR 01-15-2009
29. 20090010075 NROM memory cell, memory array, related devices and methods 01-08-2009
30. 20090008697 SRAM CELLS WITH REPRESSED FLOATING GATE MEMORY, LOW TUNNEL BARRIER INTERPOLY INSULATORS 01-08-2009
31. 20090004801 Method of forming lutetium and lanthanum dielectric structures 01-01-2009
32. 20090004759 Cobalt-doped indium-tin oxide films and methods 01-01-2009
33. 20090002025 MEMORY UTILIZING OXIDE NANOLAMINATES - Structures, systems and methods for transistors utilizing oxide nanolaminates are provided 01-01-2009
34. 20080316828 Memory in logic cell - Methods, devices, and systems for a memory in logic cell are provided 12-25-2008
35. 20080315917 Programmable computing array - Methods, devices, and systems for programmable computing arrays have been described 12-25-2008
36. 20080315279 NANOWIRE TRANSISTOR WITH SURROUNDING GATE 12-25-2008
37. 20080308855 Memory devices with isolation structures and methods of forming and programming the same 12-18-2008
38. 20080297249 CMOS AMPLIFIERS WITH FREQUENCY COMPENSATING CAPACITORS 12-04-2008
39. 20080296652 SPLIT GATE FLASH MEMORY CELL WITH BALLISTIC INJECTION 12-04-2008
40. 20080296650 High-k dielectrics with gold nano-particles 12-04-2008
41. 20080283940 LOW-TEMPERATURE GROWN HIGH QUALITY ULTRA-THIN CoTiO3 GATE DIELECTRICS 11-20-2008
42. 20080283830 Zinc-tin oxide thin-film transistors - Methods of forming transparent zinc-tin oxide structures are described 11-20-2008
43. 20080277734 IMPLANTATION PROCESSES FOR STRAINING TRANSISTOR CHANNELS OF SEMICONDUCTOR DEVICE STRUCTURES AND SEMICONDUCTOR DEVICES WITH STRAINED TRANSISTOR CHANNELS 11-13-2008
44. 20080274625 METHODS OF FORMING ELECTRONIC DEVICES CONTAINING Zr-Sn-Ti-O FILMS 11-06-2008
45. 20080268605 Capacitors and methods with praseodymium oxide insulators 10-30-2008
46. 20080265243 Magnetic floating gate flash memory structures 10-30-2008
47. 20080258245 Semiconductor Constructions and Transistor Gates 10-23-2008
48. 20080248618 ATOMIC LAYER DEPOSITION OF CeO2/Al2O3 FILMS AS GATE DIELECTRICS 10-09-2008
49. 20080246578 OPEN PATTERN INDUCTOR - Various embodiments includes a stacked open pattern inductor fabricated above a semiconductor substrate 10-09-2008
50. 20080237802 STRUCTURES INCLUDING PASSIVATED GERMANIUM 10-02-2008
51. 20080233725 Methods for stressing semiconductor material structures to improve electron and/or hole mobility of transistor channels fabricated therefrom, and semiconductor devices including such structures 09-25-2008
52. 20080227262 Vertically base-connected bipolar transistor 09-18-2008
53. 20080226220 Zinc oxide diodes for optical interconnections 09-18-2008
54. 20080226219 Zinc oxide optical waveguides - The present disclosure includes methods, devices, and systems having zinc oxide waveguides for optical signal 09-18-2008
55. 20080224240 ATOMIC LAYER DEPOSITION OF Zrx Hfy Sn1-x-y O2 FILMS AS HIGH k GATE DIELECTRICS 09-18-2008
56. 20080220618 ZIRCONIUM SILICON OXIDE FILMS - Electronic apparatus, systems, and methods include structures having a dielectric layer containing zirconium silicon 09-11-2008
57. 20080217676 ZIRCONIUM SILICON OXIDE FILMS - Electronic apparatus and systems include structures having a dielectric layer containing a zirconium silicon oxide film 09-11-2008
58. 20080203467 NROM FLASH MEMORY DEVICES ON ULTRATHIN SILICON 08-28-2008