Patent application number | Description | Published |
20080278860 | EXTRAORDINARY MAGNETORESISTIVE (EMR) DEVICE WITH NOVEL LEAD STRUCTURE - An extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system. | 11-13-2008 |
20090002898 | CPP-TMR SENSOR WITH NON-ORTHOGONAL FREE AND REFERENCE LAYER MAGNETIZATION ORIENTATION - A TMR sensor structure having free and reference layers, where the magnetic orientations of the free and reference layers are non-orthogonal. In one embodiment, a ferromagnetic free layer film has a bias-point magnetization nominally oriented in plane of the film thereof, in a first direction at an angle θ | 01-01-2009 |
20090128963 | NARROW TRACK EXTRAORDINARY MAGNETO RESISTIVE [EMR] DEVICE WITH WIDE VOLTAGE TABS AND DIAD LEAD STRUCTURE - A Lorenz magnetoresistive sensor having a pair of voltage leads and a pair of current leads. The voltage leads are located at either side of one of the current leads and are separated by a distance that is substantially equal to the length of a bit to be measured. The Lorenz magnetoresistive sensor can be, for example an extraordinary magnetoresistive sensor having a quantum well structure such as a two dimensional electron gas and a shunt structure formed on an edge of the quantum well structure opposite the voltage and current leads. | 05-21-2009 |
20090154025 | SCISSORING-TYPE CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH FREE LAYERS HAVING ETCH-INDUCED UNIAXIAL MAGNETIC ANISOTROPY - A “scissoring-type” current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with dual ferromagnetic sensing or free layers separated by a nonmagnetic spacer layer has improved stability as a result of etch-induced uniaxial magnetic anisotropy in each of the free layers. Each of the two ferromagnetic free layers has an etch-induced uniaxial magnetic anisotropy and an in-plane magnetic moment substantially parallel to its uniaxial anisotropy in the quiescent state, i.e., the absence of an applied magnetic field. The etch-induced uniaxial anisotropy of each of the free layers is achieved either by direct ion etching of each of the free layers, and/or by ion etching of the layer on which each of the free layers is deposited. A strong magnetic anisotropy is induced in the free layers by the etching, which favors generally orthogonal orientation of the two free layers in the quiescent state. | 06-18-2009 |
20090154027 | AP FREE LAYER CPP SENSOR WITH TOP APERTURE - Read sensors and associated methods of fabrication are disclosed. A read sensor as disclosed herein includes a first shield, a sensor stack including an antiparallel (AP) free layer, and insulating material disposed on the sensor stack. A aperture is formed through the insulating material above the sensor stack so that a subsequently deposited second shield is electrically coupled to the sensor stack through the aperture. The width of the aperture controls the current density that is injected into the top of the sensor stack. Also, hard bias structures may be formed to be electrically coupled to the sensor stack. The electrical coupling of the sensor stack and the hard bias structures allows current to laterally spread out as it passes through the sensor stack, and hence, provides a non-uniform current density. | 06-18-2009 |
20090168256 | MAGNETORESISTANCE (MR) READ ELEMENTS HAVING AN ACTIVE SHIELD - Read elements and associated methods of fabrication are disclosed. A read element as described herein includes a magnetoresistance (MR) sensor sandwiched between first and second shields. The read element uses the first shield as an active portion of the MR sensor. Instead of implementing an AFM pinning layer in the MR sensor, the first shield takes the place of the AFM pinning layer. The first shield is orthogonally coupled to the pinned layer through an orthogonal coupling layer, such as a thin layer of AFM material. Through this structure, the magnetic moment of the first shield pins the magnetic moment of the pinned layer transverse to the ABS of the read element, and an AFM pinning layer is not needed. | 07-02-2009 |
20090168269 | CURRENT PERPENDICULAR TO PLANE SPIN VALVE WITH HIGH-POLARIZATION MATERIAL IN AP1 LAYER FOR REDUCED SPIN TORQUE - A current perpendicular to plane magnetoresistive sensor having improved resistance amplitude change and reduced spin torque noise. The sensor has an antiparallel coupled pinned layer structure with at least one of the layers of the pinned layer structure includes a high spin polarization material such as Co | 07-02-2009 |
20090257154 | SCISSORING-TYPE CURRENT-PERPENDICULAR-TO-THE-PLANE GIANT MAGNETORESISTANCE (CPP-GMR) SENSORS WITH DAMPED FREE LAYER STRUCTURES - A “scissoring-type” current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor has magnetically damped free layers. In one embodiment each of the two free layers is in contact with a damping layer that comprises Pt or Pd, or a lanthanoid (an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Th, Yb, and Lu). Each of the two free layers has one of its surfaces in contact with the sensor's electrically conducting nonmagnetic spacer layer and its other surface in contact with its associated damping layer. A nonmagnetic film may be located between each free layer and its associated damping layer. In another embodiment the damping element is present as a dopant or impurity in each of the two free layers. In another embodiment a nanolayer of the damping element is located within each of the two free layers. | 10-15-2009 |
20090268353 | CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH ANTIPARALLEL-FREE LAYER STRUCTURE AND LOW CURRENT-INDUCED NOISE - A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL | 10-29-2009 |
20100296202 | THREE-TERMINAL DESIGN FOR SPIN ACCUMULATION MAGNETIC SENSOR - A spin accumulation sensor having a three terminal design that allows the free layer to be located at the air bearing surface. A non-magnetic conductive spin transport layer extends from a free layer structure (located at the ABS) to a reference layer structure removed from the ABS. The sensor includes a current or voltage source for applying a current across a reference layer structure. The current or voltage source has a lead that is connected with the non-magnetic spin transport layer and also to electric ground. Circuitry for measuring a signal voltage measures a voltage between a shield that is electrically connected with the free layer structure and the ground. The free layer structure can include a spin diffusion layer that ensures that all spin current is completely dissipated before reaching the lead to the voltage source, thereby preventing shunting of the spin current to the voltage source. | 11-25-2010 |
20110086440 | METHOD FOR MANUFACTURING AN EXTRAORDINARY MAGNETORESISTIVE (EMR) DEVICE WITH NOVEL LEAD STRUCTURE - A method for manufacturing an extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system. | 04-14-2011 |
20110134561 | PERPENDICULAR MAGNETIC RECORDING WRITE HEAD AND SYSTEM WITH IMPROVED SPIN TORQUE OSCILLATOR FOR MICROWAVE-ASSISTED MAGNETIC RECORDING - A microwave-assisted magnetic recording (MAMR) write head and system has a spin-torque oscillator (STO) located between the write pole of the write head and a trailing shield that alters the write field from the write pole. The STO is a stack of layers whose planes lie generally parallel to the X-Y plane of an X-Y-Z coordinate system, the stack including a ferromagnetic polarizer layer, a free ferromagnetic layer, and a nonmagnetic electrically conductive spacer between the polarizer layer and the free layer. In the presence of the write field from the write pole the polarizer layer has its magnetization oriented at an angle between 20 and 80 degrees, preferably between 30 and 70 degrees, with the Z-axis. In the presence of a direct electrical current through the STO stack, the free layer magnetization rotates or precesses about the Z-axis with a non-zero angle to the Z-axis. | 06-09-2011 |
20120120520 | CPP-TMR SENSOR WITH NON-ORTHOGONAL FREE AND REFERENCE LAYER MAGNETIZATION ORIENTATION - A CPP spin-valve magnetic head, according to one embodiment includes a ferromagnetic free layer having a bias-point magnetization nominally oriented in a first direction; a ferromagnetic reference layer film having a bias-point magnetization nominally oriented in a second direction that is not orthogonal to the said first direction; and a tunnel barrier layer between the free and reference layers. | 05-17-2012 |
20130148223 | IMPLEMENTING SPIN-TORQUE OSCILLATOR SENSING WITH ENHANCED DEMODULATOR FOR HARD DISK DRIVES - A method, apparatus, and system are provided for implementing spin-torque oscillator (STO) sensing with a demodulator for hard disk drives. The demodulator measures an instantaneous phase of the readback signal from a STO sensor and converts the readback signal into a signal that is proportional to the magnetic field affecting the STO frequency during a bit time. The converted signal is used for processing by conventional data detection electronics. | 06-13-2013 |
20130148224 | IMPLEMENTING SPIN-TORQUE OSCILLATOR SENSING WITH ENHANCED INTEGRATED DEMODULATOR FOR HARD DISK DRIVES - A method, apparatus, and system are provided for implementing spin-torque oscillator sensing with an enhanced integrated demodulator for hard disk drives. The demodulator receives an input signal from a STO read sensor having an oscillation frequency ω related to the strength of the detected magnetic signal field. The demodulator includes a pair of mixers coupled to a quadrature reference oscillator with respective quadrature components cos(ω | 06-13-2013 |
20130148229 | IMPLEMENTING SPIN-TORQUE OSCILLATOR SENSING WITH ENHANCED DELAY CONTROL FEEDBACK CIRCUIT FOR HARD DISK DRIVES - A method, apparatus, and system for implementing spin-torque oscillator (STO) sensing with an enhanced delay control feedback circuit for hard disk drives. A detector receives an input signal from a STO read sensor having an oscillation frequency related to the strength of the detected magnetic signal field. The received input signal is mixed with a time delayed input signal for providing a detector output signal. A low frequency component signal of the detector output signal is monitored and a delay control feedback is applied to an adjustable time delay to bias the DC signal of the detector output signal. | 06-13-2013 |
20140291283 | METHOD FOR MAKING A CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH REDUCED-WIDTH SELF-ALIGNED TOP ELECTRODE - A method for making a current-perpendicular-to-the-plane magnetoresistive sensor structure produces a top electrode that is “self-aligned” on the top of the sensor and with a width less than the sensor trackwidth. A pair of walls of ion-milling resistant material are fabricated to a predetermined height above the biasing layers at the sensor side edges. A layer of electrode material is then deposited onto the top of the sensor between the two walls. The walls serve as a mask during angled ion milling to remove outer portions of the electrode layer. The height of the walls and the angle of ion milling determines the width of the resulting top electrode. This leaves the reduced-width top electrode located on the sensor. Because of the directional ion milling using walls that are aligned with the sensor side edges, the reduced-width top electrode is self-aligned in the center of the sensor. | 10-02-2014 |
20140340791 | CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH REDUCED-WIDTH TOP AND BOTTOM ELECTRODES AND METHOD FOR MAKING - A current-perpendicular-to-the plane magnetoresistive sensor has top and bottom electrodes narrower than the sensor trackwidth. The electrodes are formed of one of Cu, Au, Ag and AgSn, which have an ion milling etch rate much higher than the etch rates for the sensor's ferromagnetic materials. Ion milling is performed at a high angle relative to a line orthogonal to the plane of the electrode layers and the layers in the sensor stack. Because of the much higher etch rate of the material of the top and bottom electrode layers, the electrode layers will have side edges that are recessed from the side edges of the free layer. This reduces the surface areas for the top and bottom electrodes, which causes the sense current passing through the sensor's free layer to be confined in a narrower channel, which is equivalent to having a sensor with narrower physical trackwidth. | 11-20-2014 |