Patent application number | Description | Published |
20080277715 | Dielectric film and formation method thereof, semiconductor device, non-volatile semiconductor memory device, and fabrication method for a semiconductor device - In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas. | 11-13-2008 |
20080302761 | PLASMA PROCESSING SYSTEM AND USE THEREOF - A plasma processing system | 12-11-2008 |
20080303744 | PLASMA PROCESSING SYSTEM, ANTENNA, AND USE OF PLASMA PROCESSING SYSTEM - A plasma processing system | 12-11-2008 |
20090065480 | Plasma Processing Apparatus - Provided is a plasma processing apparatus which can perform uniform processing even when a substrate to be processed has a large area. The plasma processing apparatus propagates microwaves introduced into wave guide tubes to dielectric plates through slots, and performs plasma processing to the surface of the substrate by converting a gas supplied into a vacuum container into the plasma state. In the plasma processing apparatus, a plurality of waveguide tubes are arranged in parallel, a plurality of dielectric plates are arranged for each waveguide tube, and partitioning members formed of a conductor and grounded are arranged between the adjacent dielectric plates. The in-tube wavelength of the waveguide tube is adjusted to be an optimum value by vertically moving a plunger. Furthermore, unintended plasma generation is eliminated in a space between the dielectric plate and the adjacent member, and stable plasma can be efficiently generated. As a result, high-speed and uniform processings, such as etching, film-forming, cleaning, ashing, can be performed. | 03-12-2009 |
20090152243 | PLASMA PROCESSING APPARATUS AND METHOD THEREOF - [Problem] To provide a plasma processing apparatus and a method thereof, which is capable of generating plasma evenly on the lower surface of a dielectric. | 06-18-2009 |
20090205782 | PLASMA PROCESSING APPARATUS - In a microwave plasma processing apparatus, a metal made lattice-like shower plate | 08-20-2009 |
20090214400 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus capable of generating a uniform plasma by preventing a nonuniformity of a current flow in a slot antenna. A dielectric plate is disposed to close a top opening of a plate cover and a slot antenna for generating plasma is disposed on the dielectric plate. By allowing an outer periphery of the slot antenna to make direct contact with an inner wall portion of the plate cover by using a conductive member having elasticity, when a microwave is supplied to slot antenna, it is possible to make an electrical resistance between the inner wall portion of the processing vessel and the outer periphery of the flat plate antenna substantially the same at any point in the entire circumference of the processing vessel, so that magnitude of the microwave current flowing in the slot antenna can be made approximately the same. | 08-27-2009 |
20100001744 | STANDING WAVE MEASURING UNIT AND STANDING WAVE MEASURING METHOD IN WAVEGUIDE, ELECTROMAGNETIC WAVE UTILIZATION APPARATUS, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - [Problem] To precisely measure a standing wave to be an indication for comprehending a guide wavelength λg or the like in a waveguide. | 01-07-2010 |
20100096362 | PLASMA PROCESSING APPARATUS, POWER SUPPLY APPARATUS AND METHOD FOR OPERATING PLASMA PROCESSING APPARATUS - In a plasma processing apparatus 10, a microwave transmitted from a microwave source | 04-22-2010 |
20100183827 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus capable of reducing the use amount of a dielectric member is provided. The plasma processing apparatus | 07-22-2010 |
20110146910 | PLASMA PROCESSING APPARATUS - Uniformity of a process on a substrate is improved. A plasma processing apparatus including a processing container which is formed of metal and receives a substrate to be plasma-processed, an electromagnetic wave source which supplies an electromagnetic wave required to excite plasma in the processing container, and a plurality of dielectrics, through which the electromagnetic wave supplied from the electromagnetic wave source transmits to the inside of the processing container and which have a part that is exposed to the inside of the processing container, on a lower surface of a lid of the processing container, wherein a metal electrode, which is electrically connected to the lid, is formed on a lower surface of each dielectric, a part of each dielectric exposed between the lower surface of the lid and the metal electrode has a substantially polygonal outline when viewed from the inside of the processing container, the plurality of dielectrics are disposed with vertical angles of the polygonal outlines being adjacent to each other, and a surface wave propagating portion, through which the electromagnetic wave is propagated, is formed on the lower surface of the lid exposed inside the processing container and a lower surface of the metal electrode. | 06-23-2011 |
20110180213 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A ratio between gas conductances of a main gas passage and a plurality of branch gas passages is increased. A plasma processing apparatus is an apparatus for plasma-processing an object to be processed by exciting gas, and includes a processing container; a gas supply source for supplying a desired gas; a main gas passage distributing the gas supplied from the gas supply source; a plurality of branch gas passages connected to a lower stream side of the main gas passage; a plurality of throttle portions formed on the plurality of branch gas passages to narrow the branch gas passages; and one, two, or more gas discharging holes per each of the branch gas passages, for discharging the gas that has passed through the plurality of throttle portions formed on the plurality of branch gas passages into the processing container. | 07-28-2011 |
20110259523 | PLASMA PROCESSING APPARATUS - A microwave plasma processing apparatus includes a processing chamber; a microwave source that outputs a microwave; a dielectric plate that radiates the microwave output from the microwave source to the inside of the processing chamber; and a metal electrode provided on the side of a plasma-facing surface of the dielectric plate so as to be adjacent to the dielectric plate. Here, a part of the dielectric plate is exposed to the inside of the processing chamber at an outside of the metal electrode. Further, a cell area is defined as a virtual area that divides the ceiling surface of the processing chamber and is formed by two straight lines parallel to one diagonal line of the metal electrode and two straight lines parallel to the other diagonal line of the metal electrode and the cell area is a minimum rectangular area including the metal electrode and the dielectric plate. | 10-27-2011 |