Patent application number | Description | Published |
20080277701 | High energy implant photodiode stack - An array of fully isolated multi-junction complimentary metal-oxide-semiconductor (CMOS) filterless color imager cells is provided, with a corresponding fabrication process. The color imager cell array is formed from a bulk silicon (Si) substrate without an overlying epitaxial Si layer. A plurality of color imager cells are formed in the bulk Si substrate, where each color imager cell includes a photodiode set and a U-shaped well liner. The photodiode set includes first, second, and third photodiode formed as a stacked multifunction structure, while the U-shaped well liner fully isolates the photodiode set from adjacent photodiode sets in the array. The U-shaped well liner includes a physically interfacing doped well liner bottom and first wall. The well liner bottom is interposed between the substrate and the photodiode set, and the first wall physically interfaces each doped layer of each photodiode in the photodiode set. | 11-13-2008 |
20080290408 | Thin silicon-on-insulator double-diffused metal oxide semiconductor transistor - A method is provided for fabricating a silicon (Si)-on-insulator (SOI) double-diffused metal oxide semiconductor transistor (DMOST) with a stepped channel thickness. The method provides a SOI substrate with a Si top layer having a surface. A thinned area of the Si top layer is formed, and a source region is formed in the thinned Si top layer area. The drain region is formed in an un-thinned area of the Si top layer. The channel has a first thickness adjacent the source region with first-type dopant, and a second thickness, greater than the first thickness, adjacent the drain region. The channel also has a sloped thickness between the first and second thicknesses. The second and sloped thicknesses have a second-type dopant, opposite of the first-type dopant. A stepped gate overlies the channel. | 11-27-2008 |
20080303072 | CMOS Active Pixel Sensor - A CMOS active pixel sensor includes a silicon-on-insulator substrate having a silicon substrate with an insulator layer formed thereon and a top silicon layer formed on the insulator layer. A stacked pixel sensor cell includes a bottom photodiode fabricated on the silicon substrate, for sensing light of a longest wavelength; a middle photodiode fabricated on the silicon substrate, for sensing light of a medium wavelength, which is stacked above the bottom photodiode; and a top photodiode fabricated on the top silicon layer, for sensing light of a shorter wavelength, which is stacked above the middle and bottom photodiodes. Pixel transistor sets are fabricated on the top silicon layer and are associated with each pixel sensor cell by electrical connections which extend between each of the photodiodes and respective pixel transistor(s). CMOS control circuitry is fabricated adjacent to an array of active pixel sensor cells and electrically connected thereto. | 12-11-2008 |
20080315304 | Thin silicon-on-insulator high voltage auxiliary gated transistor - A silicon (Si)-on-insulator (SOI) high voltage transistor is provided with an associated fabrication process. The method provides a SOI substrate with a Si top layer. A control channel and an adjacent auxiliary channel are formed in the Si top layer. A control gate overlies the control channel and an auxiliary gate overlies the auxiliary channel. A source region is formed adjacent the control channel, and a lightly doped drain (LDD) region is interposed between the auxiliary channel and the drain. An interior drain region is interposed between the control and auxiliary channels. Typically, the Si top layer has a thickness in the range of 20 to 1000 nm. In one aspect, the Si top layer in the source, control channel, interior drain, and auxiliary channel regions is thinned to a thickness in the range of 5 to 200 nm, and raised source, drain, LDD, and interior drain regions are formed. | 12-25-2008 |
20090057758 | Thin silicon-on-insulator high voltage transistor with body ground - A silicon (Si)-on-insulator (SOI) high voltage transistor with a body ground is provided with an associated fabrication process. The method provides a SOI substrate with a buried oxide (BOX) layer and a Si top layer having a first thickness and a second thickness, greater than the first thickness. A body ground is formed in the second thickness of Si top layer overlying the BOX layer. A control channel is formed in the first thickness of the Si top layer. A control gate is formed overlying the control channel. An auxiliary channel is formed in the second thickness of Si top layer partially overlying the body ground and extending into the first thickness of the Si top layer. An auxiliary gate is formed overlying the auxiliary channel. A pn junction is formed in the second thickness of Si top layer between the auxiliary channel and the body ground. | 03-05-2009 |
20090173933 | Thermal Sensor with a Silicon/Germanium Superlattice Structure - A silicon/germanium (SiGe) superlattice thermal sensor is provided with a corresponding fabrication method. The method forms an active CMOS device in a first Si substrate, and a SiGe superlattice structure on a second Si-on-insulator (SOI) substrate. The first substrate is bonded to the second substrate, forming a bonded substrate. An electrical connection is formed between the SiGe superlattice structure and the CMOS device, and a cavity is formed between the SiGe superlattice structure and the bonded substrate. | 07-09-2009 |
20090194799 | Dual-pixel Full Color CMOS Imager - A dual-pixel full color complementary metal oxide semiconductor (CMOS) imager is provided, along with an associated fabrication process. Two stand-alone pixels are used for three-color detection. The first pixel is a single photodiode, and the second pixel has two photodiodes built in a stacked structure. The two photodiode stack includes an n doped substrate, a bottom photodiode, and a top photodiode. The bottom photodiode has a bottom p doped layer overlying the substrate and a bottom n doped layer cathode overlying the bottom p doped layer. The top photodiode has a top p doped layer overlying the bottom n doped layer and a top n doped layer cathode overlying the top p doped layer. The single photodiode includes the n doped substrate, a p doped layer overlying the substrate, and an n doped layer cathode overlying the p doped layer. | 08-06-2009 |
20090194800 | Dual-Pixel Full Color CMOS Imager with Large Capacity Well - A dual-pixel full color CMOS imager is provided. The imager comprises a two-photodiode stack including an n doped substrate, a bottom photodiode, and a top photodiode. The bottom photodiode has a bottom p doped layer at a first depth overlying the substrate and a bottom n doped layer cathode overlying the bottom p doped layer. The top photodiode has a top p doped layer overlying the bottom n doped layer and a top n doped layer cathode overlying the top p doped layer. The imager further includes a single photodiode including a bottom p doped layer overlying the substrate at a third depth, where the third depth is less than, or equal to the first depth. A bottom n doped layer overlies the bottom p doped layer, a top p doped layer directly overlies the bottom n doped layer without an intervening layer, and a top n doped layer overlies the top p doped layer. | 08-06-2009 |
20090200584 | Full Color CMOS Imager Filter - A full color complementary metal oxide semiconductor (CMOS) imaging circuit is provided. The imaging circuit comprises an array of photodiodes including a plurality of pixel groups. Each pixel group supplies 3 electrical color signals, corresponding to 3 detectable colors. The circuit also includes a color filter array overlying the photodiode array employing less than 3 separate filter colors. Each pixel group may be enabled as a dual-pixel including a single photodiode (PD) to supply a first color signal and stacked PDs to supply a second and third color signal. In one aspect, the color filter array employs 1 filter color per pixel group. In another aspect, the color filter array employees 2 filter colors per pixel group. In either aspect, the color filter array forms a checkerboard pattern of color filter pixels. For example, a magenta color filter may overlie the stacked PDs of each dual-pixel, to name one variation. | 08-13-2009 |
20090219410 | CMOS Imager Flush Reset - A complementary metal oxide semiconductor (CMOS) imager flush reset circuit is provided. The flush reset circuit has an interface to receive first (e.g., V | 09-03-2009 |
20100090110 | Ge Imager for Short Wavelength Infrared - A germanium (Ge) short wavelength infrared (SWIR) imager and associated fabrication process are provided. The imager comprises a silicon (Si) substrate with doped wells. An array of pin diodes is formed in a relaxed Ge-containing film overlying the Si substrate, each pin diode having a flip-chip interface. There is a Ge/Si interface, and a doped Ge-containing buffer interposed between the Ge-containing film and the Ge/Si interface. An array of Si CMOS readout circuits is bonded to the flip-chip interfaces. Each readout circuit has a zero volt diode bias interface. | 04-15-2010 |
20100102366 | Integrated Infrared and Color CMOS Imager Sensor - An integrated infrared (IR) and full color complementary metal oxide semiconductor (CMOS) imager array is provided. The array is built upon a lightly doped p doped silicon (Si) substrate. Each pixel cell includes at least one visible light detection pixel and an IR pixel. Each visible light pixel includes a moderately p doped bowl with a bottom p doped layer and p doped sidewalls. An n doped layer is enclosed by the p doped bowl, and a moderately p doped surface region overlies the n doped layer. A transfer transistor has a gate electrode overlying the p doped sidewalls, a source formed from the n doped layer, and an n+ doped drain connected to a floating diffusion region. The IR pixel is the same, except that there is no bottom p doped layer. An optical wavelength filter overlies the visible light and IR pixels. | 04-29-2010 |
20100236613 | Single Heterojunction Back Contact Solar Cell - A back contact single heterojunction solar cell and associated fabrication process are provided. A first semiconductor substrate is provided, lightly doped with a first dopant type. The substrate has a first energy bandgap. A second semiconductor is formed over a region of the substrate backside. The second semiconductor has a second energy bandgap, larger than the first energy bandgap. A third semiconductor layer is formed over the first semiconductor substrate topside, moderately doped with the first dopant and textured. An emitter is formed in the substrate backside, heavily doped with a second dopant type, opposite of the first dopant type, and a base is formed in the substrate backside, heavily doped with the first dopant type. Electrical contacts are made to the base and emitter. Either the emitter or base is formed in the second semiconductor. | 09-23-2010 |
20100276776 | Germanium Film Optical Device Fabricated on a Glass Substrate - A germanium (Ge) photodiode array on a glass substrate is provided with a corresponding fabrication method. A Ge substrate is provided that is either not doped or lightly doped with a first dopant. The first dopant can be either an n or p type dopant. A first surface of the Ge substrate is moderately doped with the first dopant and bonded to a glass substrate top surface. Then, a first region of a Ge substrate second surface is heavily doped with the first dopant. A second region of the Ge substrate second surface is heavily doped with a second dopant, having the opposite electron affinity than the first dopant, forming a pn junction. An interlevel dielectric (ILD) layer is formed overlying the Ge substrate second surface and contact holes are etched in the ILD layer overlying the first and second regions of the Ge substrate second surface. The contact holes are filled with metal and metal pads are formed overlying the contact holes. | 11-04-2010 |
20110163404 | Germanium Film Optical Device - A germanium (Ge) photodiode array on a glass substrate is provided with a corresponding fabrication method. A Ge substrate is provided that is either not doped or lightly doped with a first dopant. The first dopant can be either an n or p type dopant. A first surface of the Ge substrate is moderately doped with the first dopant and bonded to a glass substrate top surface. Then, a first region of a Ge substrate second surface is heavily doped with the first dopant. A second region of the Ge substrate second surface is heavily doped with a second dopant, having the opposite electron affinity than the first dopant, forming a pn junction. An interlevel dielectric (ILD) layer is formed overlying the Ge substrate second surface and contact holes are etched in the ILD layer overlying the first and second regions of the Ge substrate second surface. The contact holes are filled with metal and metal pads are formed overlying the contact holes. | 07-07-2011 |
20120073635 | Tandem Dye-Sensitized Solar Cell and Method for Making Same - A method is provided for forming a tandem dye-sensitized solar cell (DSC) using a bonding process. The method forms a first photovoltaic (PV) cell including a cathode, a first dye, and an anode. A second PV cell is also formed including a cathode, a second dye, and an anode. The second PV cell anode is bonded to the first PV cell cathode, at a temperature of less than 100 degrees C., using a transparent conductive adhesive. In response to the bonding, an internal series electrical connection is formed between the first PV cell and the second PV cell. In one aspect, the second PV cell is formed from a first titanium oxide (TiO | 03-29-2012 |
20120211063 | Back Contact Solar Cell with Organic Semiconductor Heterojunctions - A back contact solar cell with organic semiconductor heterojunctions is provided. The substrate is made from silicon lightly doped with a first dopant type having a first majority carrier. A second semiconductor layer is formed overlying the texturized substrate topside, made from hydrogenated amorphous silicon (a-Si:H) and doped with the first dopant. An antireflective coating is formed overlying the second semiconductor layer. A third semiconductor layer is formed overlying the first semiconductor substrate backside, made from intrinsic a-Si:H. First and second majority carrier type organic semiconductor layers are formed overlying the third semiconductor layer in patterns. A dielectric organic semiconductor layer is formed overlying the first majority carrier type organic semiconductor layer and the second majority carrier type organic semiconductor layer, filling the spaces in the pattern. A first metal grid is connected to first organic semiconductor contact regions and a second metal grid is connected to the second organic semiconductor contact regions. | 08-23-2012 |
20130122723 | Ultraviolet Treatment of Metal Oxide Electrodes - An ultraviolet treatment method is provided for a metal oxide electrode. A metal oxide electrode is exposed to an ultraviolet (UV) light source in a humid environment. The metal oxide electrode is then treated with a moiety having at least one anchor group, where the anchor group is a chemical group capable of promoting communication between the moiety and the metal oxide electrode. As a result, the moiety is bound to the metal oxide electrode. In one aspect the metal oxide electrode is treated with a photoactive moiety. Exposing the metal oxide electrode to the UV light source in the humid environment induces surface defects in the metal oxide electrode in the form of oxygen vacancies. In response to the humidity, atmospheric water competes favorably with oxygen for dissociative adsorption on the metal oxide electrode surface, and hydroxylation of the metal oxide electrode surface is induced. | 05-16-2013 |
20130257378 | Transition Metal Hexacyanoferrate Battery Cathode with Single Plateau Charge/Discharge Curve - A transition metal hexacyanoferrate (TMH) cathode battery is provided. The battery has a A | 10-03-2013 |
20130257389 | Supercapacitor with Hexacyanometallate Cathode, Activated Carbone Anode, and Aqueous Electrolyte - A supercapacitor is provided with a method for fabricating the supercapacitor. The method provides dried hexacyanometallate particles having a chemical formula A | 10-03-2013 |
20130260021 | Electron Transport in Hexacyanometallate Electrode for Electrochemical Applications - A structure of intimately contacting carbon-hexacyanometallate is provided for forming a metal-ion battery electrode. Several methods are provided for forming the carbon-hexacyanometallate intimate contact. These methods include (1) adding conducting carbon during the synthesis of hexacyanometallate and forming the carbon-hexacyanometallate powder prior to forming the paste for electrode printing; (2) coating with conducting carbon after hexacyanometallate powder formation and prior to forming the paste for electrode printing; and (3) coating a layer of conducting carbon over the hexacyanometallate electrode. | 10-03-2013 |
20130260222 | Electrode Forming Process for Metal-Ion Battery with Hexacyanometallate Electrode - A method is provided for forming a metal-ion battery electrode with large interstitial spacing. A working electrode with hexacyanometallate particles overlies a current collector. The hexacyanometallate particles have a chemical formula A | 10-03-2013 |
20130260232 | Alkali and Alkaline-Earth Ion Batteries with Hexacyanometallate Cathode and Non-Metal Anode - A battery structure is provided for making alkali ion and alkaline-earth ion batteries. The battery has a hexacyanometallate cathode, a non-metal anode, and non-aqueous electrolyte. A method is provided for forming the hexacyanometallate battery cathode and non-metal battery anode prior to the battery assembly. The cathode includes hexacyanometallate particles overlying a current collector. The hexacyanometallate particles have the chemical formula A′ | 10-03-2013 |
20130260260 | Protected Transition Metal Hexacyanoferrate Battery Electrode - A protected transition metal hexacyanoferrate (TMHCF) battery cathode is presented, made from A | 10-03-2013 |
20130266860 | Hexacyanoferrate Battery Electrode Modified with Ferrocyanides or Ferricyanides - A transition metal hexacyanoferrate (TMHCF) battery electrode is provided with a Fe(CN) | 10-10-2013 |
20130266861 | Metal-Doped Transition Metal Hexacyanoferrate (TMHCF) Battery Electrode - A method is provided for synthesizing a metal-doped transition metal hexacyanoferrate (TMHCF) battery electrode. The method prepares a first solution of A | 10-10-2013 |
20130291941 | Solid-State Dye-Sensitized Solar Cell Using Sodium or Potassium Ionic Dopant - A solid-state hole transport composite material (ssHTM) is provided made from a p-type organic semiconductor and a dopant material serving as a source for either sodium (Na+) or potassium (K+) ions. The p-type organic semiconductor may be molecular (a collection of discrete molecules, that are either chemically identical or different), oligomeric, polymeric materials, or combinations thereof. In one aspect, the p-type organic semiconductor is 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (Spiro-OMeTAD). The dopant material is an inorganic or organic material salt. A solid-state dye-sensitized solar cell (ssDSC) with the above-described ssHTM, is also provided. | 11-07-2013 |
20130340825 | Dye-Sensitized Solar Cell with Ordered Tin Oxide Composite Nanostructure Electrodes - A dye-sensitized solar cell (DSC) is provided, made from an anode layer of tin oxide (SnO | 12-26-2013 |
20140037999 | Battery with Low Temperature Molten Salt (LTMS) Cathode - A battery is provided with an associated method for transporting metal-ions in the battery using a low temperature molten salt (LTMS). The battery comprises an anode, a cathode formed from a LTMS having a liquid phase at a temperature of less than 150° C., a current collector submerged in the LTMS, and a metal-ion permeable separator interposed between the LTMS and the anode. The method transports metal-ions from the separator to the current collector in response to the LTMS acting simultaneously as a cathode and an electrolyte. More explicitly, metal-ions are transported from the separator to the current collector by creating a liquid flow of LTMS interacting with the current collector and separator. | 02-06-2014 |
20140038000 | Flow-Through Metal Battery with Ion Exchange Membrane - A metal flow-through battery is provided, with ion exchange membrane. The flow-through battery is primarily made up of an anode slurry, a cathode slurry, and a hydroxide (OH | 02-06-2014 |
20140038044 | Transition Metal Hexacyanometallate-Conductive Polymer Composite - A transition metal hexacyanometallate (TMHCM)-conductive polymer (CP) composite electrode is provided. The battery electrode is made up of a current collector and a transition metal hexacyanometallate-conductive polymer composite overlying the current collector. The transition metal hexacyanometallate-conductive polymer includes a A | 02-06-2014 |
20140075745 | High Capacity Alkali/Oxidant Battery - An alkali/oxidant battery is provided with an associated method of creating battery capacity. The battery is made from an anode including a reduced first alkali metal such as lithium (Li), sodium (Na), and potassium (K), when the battery is charged. The battery's catholyte includes an element, in the battery charged state, such as nickel oxyhydroxide (NiOOH), magnesium(IV) (oxide Mn | 03-20-2014 |
20140116509 | Solid-State Dye-Sensitized Solar Cell Using Oxidative Dopant - A solid-state hole transport composite material (ssHTM) is provided. The ssHTM is made from a neutral charge first p-type organic semiconductor, and a chemically oxidized first p-type semiconductor, where the dopants are silver(I) containing materials. A reduced form of the silver(I) containing material is also retained as functional component in the ssHTM. In one aspect, the silver(I) containing material is silver bis(trifluoromethanesulfonyl)imide (TFSI). In another aspect, the first p-type organic semiconductor is 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (Spiro-OMeTAD). In one variation, the ssHTM additionally includes a first p-type organic semiconductor doped with an ionic dopant such as lithium (Li | 05-01-2014 |
20140134791 | Solution-Processed Metal-Selenide Semiconductor Using Selenium Nanoparticles - A method is provided for forming a solution-processed metal and mixed-metal selenide semiconductor using selenium (Se) nanoparticles (NPs). The method forms a first solution including SeNPs dispersed in a solvent. Added to the first solution is a second solution including a first material set of metal salts, metal complexes, or combinations thereof, which are dissolved in a solvent, forming a third solution. The third solution is deposited on a conductive substrate, forming a first intermediate film comprising metal precursors, from corresponding members of the first material set, and embedded SeNPs. As a result of thermally annealing, the metal precursors are transformed and the first intermediate film is selenized, forming a first metal selenide-containing semiconductor. In one aspect, the first solution further comprises ligands for the stabilization of SeNPs, which are liberated during thermal annealing. In another aspect, the metal selenide-containing semiconductor comprises copper, indium, gallium diselenide (CIGS). | 05-15-2014 |
20140134792 | Solution-Processed Metal Selenide Semiconductor using Deposited Selenium Film - Methods are provided for fabricating a solution-processed metal and mixed-metal selenide semiconductor using a selenium (Se) film layer. One aspect provides a conductive substrate and deposits a first Se film layer over the conductive substrate. A first solution, including a first material set of metal salts, metal complexes, or combinations thereof, is dissolved in a solvent and deposited on the first Se film layer. A first intermediate film comprising metal precursors is formed from corresponding members of the first material set. In one aspect, a plurality of intermediate films is formed using metal precursors from the first material set or a different material set. In another aspect, a second Se film layer is formed overlying the intermediate film(s). Thermal annealing is performed in an environment including hydrogen (H | 05-15-2014 |
20140154575 | CYANOMETALLATE CATHODE BATTERY AND METHOD FOR FABRICATION - A method is provided for fabricating a cyanometallate cathode battery. The method provides a cathode of A | 06-05-2014 |
20140176077 | METAL CYANOMETALLATE ELECTRODE WITH SHIELD STRUCTURE - A mechanism is presented for shielding a cathode in a metal cyanometallate battery. A battery is provided with an anode, a cathode, an electrolyte, and an ion-permeable membrane separating the anode from the cathode. The cathode is made up of a plurality of metal cyanometallate layers overlying the current collector. At least one of the metal cyanometallate layers is an active layer formed from an active material A | 06-26-2014 |
20140178761 | FABRICATION METHOD FOR METAL BATTERY ELECTRODE WITH PYROLYZED COATING - A method is provided for forming a metal battery electrode with a pyrolyzed coating. The method provides a metallorganic compound of metal (Me) and materials such as carbon (C), sulfur (S), oxygen (O), and combinations of the above-listed materials, expressed as Me | 06-26-2014 |
20140186706 | Battery Anode with Preloaded Metals - A method is presented for fabricating an anode preloaded with consumable metals. The method provides a material (X), which may be one of the following materials: carbon, metals able to be electrochemically alloyed with a metal (Me), intercalation oxides, electrochemically active organic compounds, and combinations of the above-listed materials. The method loads the metal (Me) into the material (X). Typically, Me is an alkali metal, alkaline earth metal, or a combination of the two. As a result, the method forms a preloaded anode comprising Me/X for use in a battery comprising a M1 | 07-03-2014 |
20140186707 | Battery with an Anode Preloaded with Consumable Metals - A method is provided for fabricating a battery using an anode preloaded with consumable metals. The method forms an ion-permeable membrane immersed in an electrolyte. A preloaded anode is immersed in the electrolyte, comprising Me | 07-03-2014 |
20140186719 | NASICON-Polymer Electrolyte Structure - A method is provided for forming a sodium-containing particle electrolyte structure. The method provides sodium-containing particles (e.g., NASICON), dispersed in a liquid phase polymer, to form a polymer film with sodium-containing particles distributed in the polymer film. The liquid phase polymer is a result of dissolving the polymer in a solvent or melting the polymer in an extrusion process. In one aspect, the method forms a plurality of polymer film layers, where each polymer film layer includes sodium-containing particles. For example, the plurality of polymer film layers may form a stack having a top layer and a bottom layer, where with percentage of sodium-containing particles in the polymer film layers increasing from the bottom layer to the top layer. In another aspect, the sodium-containing particles are coated with a dopant. A sodium-containing particle electrolyte structure and a battery made using the sodium-containing particle electrolyte structure are also presented. | 07-03-2014 |
20140216553 | Dye-Sensitized Solar Cell via Co-Sensitization with Cooperative Dyes - A co-sensitized dye-sensitized solar cell (DSC) is provided, made from a transparent substrate and a transparent conductive oxide (TCO) film overlying the transparent substrate. An n-type semiconductor layer overlies the TCO, and is co-sensitized with a first dye (D1) and a second dye (D2). A redox electrolyte is in contact with the co-sensitized n-type semiconductor layer, and a counter electrode overlies the redox electrolyte. The first dye (D1) has a first optical absorbance local maxima at a first wavelength (A1) and a second optical absorbance local maxima at a second wavelength (A2), longer than the first wavelength. The second dye (D2) has a third optical absorbance local maxima at a third wavelength (A3) between the first wavelength (A1) and the second wavelength (A2). In one aspect, the first dye (D1) includes a porphyrin material, for example, a metalloporphyrin obtained by complexation with a transition metal such as zinc (i.e. zinc porphyrin (ZnP)). | 08-07-2014 |
20140231832 | THREE-TERMINAL LIGHT EMITTING DEVICE (LED) WITH BUILT-IN ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICE - A three-terminal light emitting device (LED) chip, associated fabrication method, and LED array are provided. The method forms an n-doped semiconductor layer overlying a substrate, an active semiconductor layer overlying the n-doped semiconductor layer, and a p-doped semiconductor layer overlying the active semiconductor layer. A trench is formed through the p-doped and active semiconductor layers, exposing the n-doped semiconductor layer. In one aspect, the trench is formed at least part way, but not completely, through the n-doped semiconductor layer. Then, an LED P electrode is formed overlying a first region of the p-doped semiconductor layer, a diode P electrode is formed overlying a second region of the p-doped semiconductor layer that is separated from the first region of the p-doped semiconductor layer by the trench, and an N electrode is formed overlying a top surface of the exposed n-doped semiconductor layer in the trench, shared by the LED and diode. | 08-21-2014 |
20140239920 | Supercapacitor with Metal Cyanometallate Anode and Carbonaceous Cathode - A method is provided for charging a supercapacitor. The method initially provides a supercapacitor with a metal cyanometallate (MCM) particle anode, an electrolyte including a salt (DB) made up of cations (D+) anions (B−), and a cathode including carbonaceous materials (□). The method connects an external charging device between the anode and cathode, and the charging device supplies electrons to the anode and accepting electrons from the cathode. In response to the charging device, cations are inserted into the anode while anions are absorbed on the surface of the cathode. A supercapacitor device is also presented. | 08-28-2014 |
20140255770 | Carbon-Sulfur Composite Cathode Passivation and Method for Making Same - A method is provided for forming a carbon-sulfur (C—S) battery cathode. The method forms a C—S nanocomposite material overlying metal current collector. A dielectric is formed overlying the C—S material that is permeable to lithium (Li) ions and electrolyte, but impermeable to polysulfides. Typically, the C—S nanocomposite material is porous and the dielectric forms a uniform coating of dielectric inside C—S nanocomposite pores. The dielectric includes a metal (M) oxide with an oxy bridge formation (M-O-M). The metal (M) may, for example, be Mg, Al, Si, Ti, Zn, In, Sn, Mn, Ni, or Cu. A C—S battery cathode, and a battery with a C—S are also provided. | 09-11-2014 |
20140264160 | Method for the Synthesis of Metal Cyanometallates - Methods are presented for synthesizing metal cyanometallate (MCM). A first method provides a first solution of A | 09-18-2014 |
20140283892 | Solid State Dye-Sensitized Solar Cell Tandem Module - A method is provided for forming a solid-state dye-sensitized solar cell (ssDSC) tandem module. The method fabricates a first panel by forming a first plurality of series-connected ssDSC cells overlying the first substrate top surface, with an electrical interface between each ssDSC cell. A second panel is fabricated in the same manner. An anisotropic conductive film (ACF) is formed overlying each electrical interface of the first panel ssDSC cells. Each ACF is aligned to a corresponding electrical interface of the second panel ssDSC cells, and the panels are bound. The result is a ssDSC tandem module comprising a first plurality of series-connected tandem sections, where each tandem section comprises a first panel ssDSC cell connected in parallel with an overlying second panel ssDSC cell. In one variation, the tandem sections include series-connected ssDSC cells. | 09-25-2014 |
20140346552 | Three-Terminal Light Emitting Device (LED) - A three-terminal light emitting device (LED) chip, associated fabrication method, and LED array are provided. The method forms an n-doped semiconductor layer overlying a substrate, an active semiconductor layer overlying the n-doped semiconductor layer, and a p-doped semiconductor layer overlying the active semiconductor layer. A trench is formed through the p-doped and active semiconductor layers, exposing the n-doped semiconductor layer. In one aspect, the trench is formed at least part way, but not completely, through the n-doped semiconductor layer. Then, an LED P electrode is formed overlying a first region of the p-doped semiconductor layer, a diode P electrode is formed overlying a second region of the p-doped semiconductor layer that is separated from the first region of the p-doped semiconductor layer by the trench, and an N electrode is formed overlying a top surface of the exposed n-doped semiconductor layer in the trench, shared by the LED and diode. | 11-27-2014 |
20140370187 | Precipitation Method for the Synthesis if Iron Hexacyaoferrate - A method is provided for synthesizing iron hexacyanoferrate (FeHCF). The method forms a first solution of a ferrocyanide source [A | 12-18-2014 |
20140370401 | Air Cathode Battery Using Zinc Slurry Anode with Carbon Additive - An air cathode battery is provided that uses a zinc slurry anode with carbon additives. The battery is made from an air cathode and a zinc slurry anode. The zinc slurry anode includes zinc particles, an alkaline electrolyte, with a complexing agent and carbon additives in the alkaline electrolyte. A water permeable ion-exchange membrane and electrolyte chamber separate the zinc slurry from the air cathode. The carbon additives may, for example, be graphite, carbon fiber, carbon black, or carbon nanoparticles. The proportion of carbon additives to zinc is in the range of 2.5 to 10% by weight. The proportion of alkaline electrolyte in the zinc slurry is in the range of 50 to 80% by volume. | 12-18-2014 |