Patent application number | Description | Published |
20080203387 | Thin film transistor and method of manufacturing the same - Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor may include a gate; a channel layer; a source and a drain, the source and the drain being formed of metal; and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain. The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain. | 08-28-2008 |
20080206923 | Oxide semiconductor target, method of forming the same, method of forming oxide semiconductor layer using the same and method of manufacturing semiconductor device using the same - Provided are a method of forming an oxide semiconductor layer and a method of manufacturing a semiconductor device using the method of forming an oxide semiconductor layer. The method may include mounting an oxide semiconductor target in a chamber; loading a substrate into the chamber; vacuuming the chamber; applying a direct current power to the oxide semiconductor target while injecting oxygen and a sputtering gas into the chamber; and forming an oxide semiconductor layer on a surface of the substrate by applying plasma of the sputtering gas onto the oxide semiconductor target. Here, the oxide semiconductor target may have a resistance of 1 kΩ or less. The oxide semiconductor target may have a composition of x(first oxide).y(second oxide).z(third oxide) where x, y and z are molar ratios. Each of the first through third oxides may be one of Ga | 08-28-2008 |
20080237687 | Flash memory device - Provided is a flash memory device including a gate structure on a substrate. The flash memory device includes a charge supply layer including a ZnO based material formed between a substrate and a gate structure or formed on the gate structure. Accordingly, the flash memory device can be formed to be of a bottom gate type or of a top gate type by including the charge supply layer. Also, the flash memory device may be realized to be any of a charge trap type and a floating gate type. | 10-02-2008 |
20080258141 | Thin film transistor, method of manufacturing the same, and flat panel display having the same - A thin film transistor (TFT), a method of manufacturing the TFT, and a flat panel display comprising the TFT are provided. The TFT includes a gate, a gate insulating layer that contacts the gate, a channel layer that contacts the gate insulating layer and faces the gate with the gate insulating layer therebetween, a source that contacts an end of the channel layer; and a drain that contacts an other end of the channel layer, wherein the channel layer is an amorphous oxide semiconductor layer, and each of the source and the drain is a conductive oxide layer comprising an oxide semiconductor layer having a conductive impurity in the oxide semiconductor layer. A low resistance metal layer can further be included on the source and drain. A driving circuit of a unit pixel of a flat panel display includes the TFT. | 10-23-2008 |
20080315193 | Oxide-based thin film transistor, method of fabricating the same, zinc oxide etchant, and a method of forming the same - Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession. | 12-25-2008 |
20080315194 | Oxide semiconductors and thin film transistors comprising the same - Oxide semiconductors and thin film transistors (TFTs) including the same are provided. An oxide semiconductor includes Zn atoms and at least one of Ta and Y atoms added thereto. A thin film transistor (TFT) includes a channel including an oxide semiconductor including Zn atoms and at least one of Ta and Y atoms added thereto. | 12-25-2008 |
20080315200 | Oxide semiconductors and thin film transistors comprising the same - Oxide semiconductors and thin film transistors (TFTs) including the same are provided. An oxide semiconductor includes Zn atoms and at least one of Hf and Cr atoms added thereto. A thin film transistor (TFT) includes a channel including an oxide semiconductor including Zn atoms and at least one of Hf and Cr atoms added thereto. | 12-25-2008 |
20090001432 | Channel layer for a thin film transistor, thin film transistor including the same, and methods of manufacturing the same - Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer. | 01-01-2009 |
20090008638 | Oxide semiconductor, thin film transistor including the same and method of manufacturing a thin film transistor - Example embodiments relate to an oxide semiconductor including zinc oxide (ZnO), a thin film transistor including a channel formed of the oxide semiconductor and a method of manufacturing the thin film transistor. The oxide semiconductor may include a Ga | 01-08-2009 |
20090057663 | Oxide thin film transistor and method of manufacturing the same - An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer. | 03-05-2009 |
20090294764 | Oxide semiconductors and thin film transistors comprising the same - Provided are oxide semiconductors and thin film transistors of the same. An oxide semiconductor includes Zn, In and Hf. The amount of Hf is in the range of about 2-16 at %, inclusive, based on the total amount of Zn, In, and Hf. A thin film transistor includes a gate and a gate insulating layer arranged on the gate. A channel corresponding to the gate is formed on the gate insulating layer. The channel includes an oxide semiconductor. The semiconductor oxide includes Zn, In and Hf. The amount of Hf is in the range of about 2-16 at %, inclusive, based on the total amount of Zn, In, and Hf. A source and a drain contact respective sides of the channel. | 12-03-2009 |
20100006834 | Channel layers and semiconductor devices including the same - Channel layers and semiconductor devices including the channel layers are disclosed. A channel layer may include a multi-layered structure. Layers forming the channel layer may have different carrier mobilities and/or carrier densities. The channel layer may have a double layered structure including a first layer and a second layer which may be formed of different oxides. Characteristics of the transistor may vary according to materials used to form the channel layers and/or thicknesses thereof. | 01-14-2010 |
20100044700 | Oxide semiconductor and thin film transistor including the same - Disclosed are an oxide semiconductor and a thin film transistor (TFT) including the same. The oxide semiconductor may include a lanthanoid (Ln) added to zinc oxide (ZnO) and may be used as a channel material of the TFT. | 02-25-2010 |
20100091541 | Stacked memory device and method thereof - A stacked memory device includes a plurality of memory layers, where at least one of the plurality of memory layers is stacked on another of the plurality of memory layers and each of the memory layers includes an array of memory cells, a first active circuit unit configured to classify and process address information for at least one of the memory cells as vertical address information and horizontal address information, and at least one second active circuit unit configured to generate a memory selection signal for at least one of the memory cells based on signals processed by the first active circuit unit. | 04-15-2010 |
20100117684 | Inverter and logic device comprising the same - The inverter includes a driving transistor and a loading transistor having channel regions with different thicknesses. The channel region of the driving transistor may be thinner than the channel region of the load transistor. A channel layer of the driving transistor may have a recessed region between a source and a drain which contact both ends of the channel layer. The driving transistor may be an enhancement mode transistor and the load transistor may be a depletion mode transistor. | 05-13-2010 |
20100133496 | Resistive random access memory - A RRAM may include a first electrode, a second electrode, and a memory resistant layer between the first and second electrodes, wherein the memory resistant layer may include a transition metal oxide doped with a metal having a high oxygen affinity. Because a RRAM includes a memory resistant layer doped with a material having a high oxygen affinity, the RRAM may be stably driven at higher temperatures. | 06-03-2010 |
20100140608 | Transistor and method of manufacturing the same - Example embodiments provide a transistor and a method of manufacturing the same. The transistor may include a channel layer formed of an oxide semiconductor and a gate having a three-dimensional structure. A plurality of the transistors may be stacked in a perpendicular direction to a substrate. At least some of the plurality of transistors may be connected to each other. | 06-10-2010 |
20100148825 | Semiconductor devices and methods of fabricating the same - Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device may be a complementary device including a p-type oxide TFT and an n-type oxide TFT. The semiconductor device may be a logic device such as an inverter, a NAND device, or a NOR device. | 06-17-2010 |
20100149138 | Display apparatuses and methods of operating the same - Provided are display apparatuses and methods of operating the same. In a display apparatus, a display image may be continuously held for longer than about 10 msec after the power of the display panel is turned off. The display apparatus may indicate a liquid crystal display (LCD) apparatus including an oxide thin film transistor (TFT). Off leakage current of the oxide TFT may be less than about 10 | 06-17-2010 |
20100176393 | Oxide semiconductor and thin film transistor including the same - Provided are an oxide semiconductor and a thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of indium (In) oxide and hafnium (Hf) and may be a channel material of the thin film transistor. | 07-15-2010 |
20100264956 | Inverter, method of manufacturing the same, and logic circuit including the inverter - Provided are an inverter, a method of manufacturing the inverter, and a logic circuit including the inverter. The inverter may include a first transistor and a second transistor having different channel layer structures. A channel layer of the first transistor may include a lower layer and an upper layer, and a channel layer of the second transistor may be the same as one of the lower layer and the upper layer. At least one of the lower layer and the upper layer may be an oxide layer. The inverter may be an enhancement/depletion (E/D) mode inverter or a complementary inverter. | 10-21-2010 |
20100295579 | Inverter and logic device comprising the same - The inverter includes a driving transistor and a loading transistor having channel regions with different thicknesses. The channel region of the driving transistor may be thinner than the channel region of the load transistor. A channel layer of the driving transistor may have a recessed region between a source and a drain which contact both ends of the channel layer. The driving transistor may be an enhancement mode transistor and the load transistor may be a depletion mode transistor. | 11-25-2010 |
20100308297 | Heterojunction diode, method of manufacturing the same, and electronic device including the heterojunction diode - Example embodiments relate to a heterojunction diode, a method of manufacturing the heterojunction diode, and an electronic device including the heterojunction diode. The heterojunction diode may include a first conductive type non-oxide layer and a second conductive type oxide layer bonded to the non-oxide layer. The non-oxide layer may be a Si layer. The Si layer may be a p++ Si layer or an n++ Si layer. A difference in work functions of the non-oxide layer and the oxide layer may be about 0.8-1.2 eV. Accordingly, when a forward voltage is applied to the heterojunction diode, rectification may occur. The heterojunction diode may be applied to an electronic device, e.g., a memory device. | 12-09-2010 |
20110001746 | Apparatuses for and methods of displaying three-dimensional images - An apparatus for displaying a three-dimensional (3D) image may include a plurality of display panels and a controller configured to apply image signals to each of the plurality of display panels. At least one of the display panels may include a transparent display panel. The plurality of display panels may be spaced apart from each other in a depth direction. A method of displaying a three-dimensional (3D) image may include displaying plane images on each of a plurality of display panels. At least one of the plurality of display panels may include a transparent display panel. The plurality of display panels may be spaced apart from each other in a depth direction. | 01-06-2011 |
20110049464 | Resistive random access memory device and memory array including the same - A resistive random access memory (RRAM) includes a resistive memory layer of a transition metal oxide, such as Ni oxide, and is doped with a metal material. The RRAM may include at least one first electrode, a resistive memory layer on the at least one first electrode, the resistive memory layer including a Ni oxide layer doped with at least one element selected from a group consisting of Fe, Co, and Sn, and at least one second electrode on the resistive memory layer. The RRAM device may include a plurality of first electrodes and a plurality of second electrodes, and the resistive memory layer may be between the plurality of first electrodes and the plurality of second electrodes. | 03-03-2011 |
20110085368 | Non-volatile memory device and method of manufacturing the same - The non-volatile memory device may include a substrate, a plurality of first signal lines on the substrate in a vertical direction, a plurality of memory cells having ends connected to the plurality of first signal lines, a plurality of second signal lines perpendicular to the plurality of first signal lines on the substrate and each connected to other ends of the plurality of memory cells, and a plurality of selection elements on the substrate and connected to at least two of the plurality of first signal lines. | 04-14-2011 |
20110101342 | ZnO based semiconductor devices and methods of manufacturing the same - A semiconductor device may include a composite represented by Formula 1 below as an active layer. | 05-05-2011 |
20110101343 | ZnO based semiconductor devices and methods of manufacturing the same - A semiconductor device may include a composite represented by Formula 1 below as an active layer. | 05-05-2011 |
20110108704 | Image sensors and methods of operating the same - Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively. | 05-12-2011 |
20110108835 | Transistors, methods of manufacturing a transistor and electronic devices including a transistor - A transistor, a method of manufacturing a transistor, and an electronic device including a transistor are provided, the transistor may include a channel layer having a multi-layer structure. The channel layer may have a double layer structure or a triple layer structure. At least two layers of the channel layer may have different oxygen concentrations. | 05-12-2011 |
20110114939 | Transistors, electronic devices including a transistor and methods of manufacturing the same - Transistors, electronic devices including a transistor and methods of manufacturing the same are provided, the transistor includes an oxide semiconductor layer (as a channel layer) having compositions that vary in one direction. The channel layer may be an oxide layer including a first element, a second element, and Zn, which are metal elements. The amount of at least one of the first element, the second element, and Zn may change in a deposition direction of the channel layer. The first element may be any one of hafnium (Hf), yttrium (Y), tantalum (Ta), zirconium (Zr), gallium (Ga), aluminum (Al) or combinations thereof. The second element may be indium (In). The channel layer may have a multi-layered structure including at least two layers with different compositions. | 05-19-2011 |
20110128772 | Nonvolatile memory cells and nonvolatile memory devices including the same - A nonvolatile memory cell may include a bidirectional switch having a first threshold voltage when a forward current is applied to the bidirectional switch and a second threshold voltage when a reverse current is applied to the bidirectional switch; and a variable resistor connected to the bidirectional switch in series. A state of resistance of the variable resistor may be controlled according to voltage applied to the variable resistor. A sum of a magnitude of the first threshold voltage and a magnitude of the second threshold voltage may be greater than a write voltage that is used to perform a write operation on the variable resistor. | 06-02-2011 |
20110141060 | Optical touch panels and methods of driving the same - An optical touch panel may include a plurality of light-sensing areas. The plurality of light-sensing areas may be integrally formed with pixels in a display panel or may be formed on the display panel, in order to sense incident light from outside the optical touch panel. A method of driving an optical touch panel may include sensing a change in an output from a plurality of light-sensing areas between two time points and determining that there is an optical input when the change in the output is greater than or equal to a first reference value that is defined in advance. The light-sensing areas may be integrally formed with pixels in a display panel or formed on a surface of the display panel, for sensing incident light from outside the optical touch panel. | 06-16-2011 |
20110147696 | Resistive random access memory devices and resistive random access memory arrays having the same - A resistive random access memory (RRAM) devices and resistive random access memory (RRAM) arrays are provided, the RRAM devices include a first electrode layer, a variable resistance material layer formed of an oxide of a metallic material having a plurality of oxidation states, an intermediate electrode layer on the variable resistance material layer and formed of a conductive material having a lower reactivity with oxygen than the metallic material, and a second electrode layer on the intermediate electrode layer. The RRAM arrays include at least one of the aforementioned RRAM devices. | 06-23-2011 |
20110147734 | Transistor, method of manufacturing transistor, and electronic device including transistor - Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a gate insulator of which at least one surface is treated with plasma. The surface of the gate insulator may be an interface that contacts a channel layer. The interface may be treated with plasma by using a fluorine (F)-containing gas, and thus may include fluorine (F). The interface treated with plasma may suppress the characteristic variations of the transistor due to light. | 06-23-2011 |
20110156020 | Transistor - Provided is a transistor including a semiconductor insertion layer between a channel layer and a source electrode. A potential barrier between the channel layer and the source electrode may be increased by the semiconductor insertion layer. The channel layer may be an oxide semiconductor layer. The transistor may be an enhancement mode transistor. | 06-30-2011 |
20110168993 | Transistors and methods of manufacturing the same - Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions. | 07-14-2011 |
20110175080 | Transistors, methods of manufacturing a transistor, and electronic devices including a transistor - Transistors, methods of manufacturing a transistor, and electronic devices including a transistor are provided, the transistor includes a channel layer, a source and a drain respectively contacting opposing ends of the channel layer, a gate corresponding to the channel layer, a gate insulating layer between the channel layer and the gate, and a first passivation layer and a second passivation layer sequentially disposed on the gate insulating layer. The first passivation layer covers the source, the drain, the gate, the gate insulating layer and the channel layer. The second passivation layer includes fluorine (F). | 07-21-2011 |
20110188290 | Semiconductor devices including variable resistance materials and methods of operating the same - Semiconductor devices including variable resistance materials and methods of operating the semiconductor devices. The semiconductor devices use variable resistance materials with resistances that vary according to applied voltages as channel layers. | 08-04-2011 |
20110220860 | Bipolar memory cells, memory devices including the same and methods of manufacturing and operating the same - Bipolar memory cells and a memory device including the same are provided, the bipolar memory cells include two bipolar memory layers having opposite programming directions. The two bipolar memory layers may be connected to each other via an intermediate electrode interposed therebetween. The two bipolar memory layers may have the same structure or opposite structures. | 09-15-2011 |
20110230021 | Inverter, method of manufacturing the same, and logic circuit including the inverter - Provided are an inverter, a method of manufacturing the inverter, and a logic circuit including the inverter. The inverter may include a first transistor and a second transistor having different channel layer structures. A channel layer of the first transistor may include a lower layer and an upper layer, and a channel layer of the second transistor may be the same as one of the lower layer and the upper layer. At least one of the lower layer and the upper layer may be an oxide layer. The inverter may be an enhancement/depletion (E/D) mode inverter or a complementary inverter. | 09-22-2011 |
20110240869 | X-ray detector including oxide semiconductor transistor - Example embodiments are directed an X-ray detector including an oxide semiconductor transistor. The X-ray detector including the oxide semiconductor transistor includes an oxide semiconductor transistor and a signal storage capacitor in parallel to each other on a substrate. The oxide semiconductor transistor includes a channel formed of an oxide semiconductor material, and a photoconductor. A pixel electrode and a common electrode are formed on opposite surfaces of the photoconductor. The channel includes ZnO, or a compound including ZnO and at least one selected from a group consisting of gallium (Ga), indium (In), hafnium (Hf), and tin (Sn). | 10-06-2011 |
20110241143 | X-ray pixels including double photoconductors and x-ray detectors including the x-ray pixels - Example embodiments are directed to X-ray detectors including double photoconductors. According to example embodiments, the X-ray detector includes a first photoconductor on which X-rays are incident, and a second photoconductor on which X-rays transmitted through the first photoconductor are incident. The first photoconductor and the second photoconductor include a tandem structure. The first photoconductor is formed of silicon and absorbs X-rays in a low energy band, and the second photoconductor is formed of a material that absorbs X-rays in an energy band higher than the low energy band of the X-rays absorbed by silicon. | 10-06-2011 |
20110241989 | Remote touch panel using light sensor and remote touch screen apparatus having the same - A remote touch panel includes a plurality of light sensor cells arranged in two dimensions. Each light sensor cell may include a light-sensitive semiconductor layer and first and second electrodes electrically connected to the light-sensitive semiconductor layer. The remote touch panel may be controlled at a remote distance. For example, a large display apparatus can be easily controlled by using a simple light source device, for example, a laser pointer. | 10-06-2011 |
20110261017 | Light sensing circuit, and remote optical touch panel and image acquisition apparatus including the light sensing circuit - Example embodiments are directed to light sensing circuits having a relatively simpler structure by using light-sensitive oxide semiconductor transistors as light sensing devices, and remote optical touch panels and image acquisition apparatuses, each including the light sensing circuits. The light sensing circuit includes a light-sensitive oxide semiconductor transistor in each pixel, wherein the light-sensitive oxide semiconductor transistor is configured as a light sensing device, and a driving circuit that outputs data. The light sensing circuit may have a relatively simple circuit structure including a plurality of transistors in one pixel. As a result, the structure and operation of the light sensing circuit may be simplified. | 10-27-2011 |
20110272689 | Optical touch panel and method of fabricating the same - An optical touch panel may be used remotely to control a large-sized display device. According to a method of fabricating the optical touch panel, an optical sensor transistor for sensing light and a switch transistor for drawing data can be formed together on the same substrate by using a relatively simple process. The optical touch panel may include an optical sensor transistor and a switch transistor. The optical sensor transistor may be configured to sense light and the switch transistor may be configured to draw data from the optical sensor transistor. The optical sensor transistor may include a light sensitive oxide semiconductor material as a channel layer. The switch transistor may include a non-light sensitive oxide semiconductor material as a channel layer. | 11-10-2011 |
20110309259 | Large-scale X-ray detectors and methods of manufacturing the same - Large-scale X-ray detectors and methods of manufacturing the same are provided, the large-scale X-ray detectors include a photoconductor layer configured to generate electrical charges according to an incident X-ray using an entire area of the photoconductor layer, a common electrode on an upper surface of the photoconductor layer, a plurality of pixel electrodes, configured to convert the electrical charges into electrical signals, on a lower surface of the photoconductor layer and divided into a plurality of groups, and a plurality of application-specific integrated circuits (ASICs) each corresponding to one of the groups. Each ASIC is configured to process the electrical signals conveyed via the pixel electrodes in the corresponding group. The ASICs process the electrical signals so that seamless image information is collectively generated by the ASICs with respect to the entire area of the photoconductor layer. | 12-22-2011 |
20110310652 | Variable resistance devices, semiconductor devices including the variable resistance devices, and methods of operating the semiconductor devices - Methods of operating semiconductor devices that include variable resistance devices, the methods including writing first data to a semiconductor device by applying a reset pulse voltage to the variable resistance device so that the variable resistance device is switched from a first resistance state to a second resistance state, and writing second data to the semiconductor device by applying a set pulse voltage to the variable resistance device so that the variable resistance device is switched from the second resistance state to the first resistance state to the second resistance state. The reset pulse voltage is higher than the set pulse voltage, and a resistance in the second resistance state is greater than in the first resistance state | 12-22-2011 |
20120018695 | Non-Volatile Memory Element And Memory Device Including The Same - Example embodiments, relate to a non-volatile memory element and a memory device including the same. The non-volatile memory element may include a memory layer having a multi-layered structure between two electrodes. The memory layer may include first and second material layers and may show a resistance change characteristic due to movement of ionic species therebetween. The first material layer may be an oxygen-supplying layer. The second material layer may be an oxide layer having a multi-trap level. | 01-26-2012 |
20120032132 | Nonvolatile Memory Elements And Memory Devices Including The Same - Nonvolatile memory elements may include a first electrode, a second electrode, a first buffer layer, a second buffer layer and a memory layer. The memory layer may be between the first and second electrodes. The first butter layer may be between the memory layer and the first electrode. The second buffer layer may be between the memory layer and the second electrode. The memory layer may be a multi-layer structure including a first material layer and a second material layer. The first material layer may include a first metal oxide which is of the same group as, or a different group from, a second metal oxide included in the second material layer. | 02-09-2012 |
20120112181 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR INCLUDING THE SAME AND THIN FILM TRANSISTOR DISPLAY PANEL INCLUDING THE SAME - An oxide semiconductor including: (A) at least one element of zinc (Zn) and tin (Sn); and (B) at least one element of arsenic (As), antimony (Sb), chromium (Cr), cerium (Ce), tantalum (Ta), neodymium (Nd), niobium (Nb), scandium (Sc), yttrium (Y), and hafnium (Hf), is provided. | 05-10-2012 |
20120113078 | Methods Of Driving Active Display Device - A method of driving an active display device. The method including recovering a threshold voltage of a switching transistor connected to a pixel. The recovering including applying a negative bias voltage to the switching transistor prior to charging each pixel during a charging period. The negative bias voltage is applied to a drain of the switching transistor. | 05-10-2012 |
20120139876 | Light Sensing Circuit, Method Of Manufacturing The Same, And Optical Touch Panel Including The Light Sensing Circuit - A light sensing circuit using an oxide semiconductor transistor, a method of manufacturing the light sensing circuit, and an optical touch panel including the light sensing circuit. Because the light sensing circuit includes only one light sensor transistor and one switch transistor formed on the same substrate, a structure of the light sensing circuit is simplified. Furthermore, because the light sensor transistor and the switch transistor have the same structure, a method of manufacturing the light sensing circuit is also simplified. Also, since an optical touch panel or an image acquisition apparatus using the light sensing circuit uses the light sensing circuit having a simple structure and does not use a capacitor, the optical touch panel or the image acquisition apparatus may be made thinner and larger. | 06-07-2012 |
20120146016 | Wafer-Scale X-Ray Detector And Method Of Manufacturing The Same - A wafer-scale x-ray detector and a method of manufacturing the same are provided. The wafer-scale x-ray detector includes: a seamless silicon substrate electrically connected to a printed circuit substrate; a chip array having a plurality of pixel pads formed on a central region thereof and a plurality of pin pads formed at edges thereof on the seamless silicon substrate; a plurality of pixel electrodes formed to correspond to the pixel pads; vertical wirings and horizontal wirings formed to compensate a difference of regions expanded towards the pixel electrodes from the pixel pads between the chip array and the pixel electrodes; a redistribution layer having an insulating layer to separate the vertical wirings and the horizontal wirings; and a photoconductor layer and a common electrode which cover the pixel electrodes on the redistribution layer. | 06-14-2012 |
20120161821 | VARIABLE RESISTANCE DEVICE, SEMICONDUCTOR DEVICE INCLUDING THE VARIABLE RESISTANCE DEVICE, AND METHOD OF OPERATING THE SEMICONDUCTOR DEVICE - A method of operating a semiconductor device that includes a variable resistance device, the method including applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing first current flowing through the variable resistance device to which the first voltage is applied; determining whether the first current falls within a predetermined range of current; and if the first current does not fall within the first range of current, applying an additional first voltage that is equal to the first voltage to the variable resistance device. | 06-28-2012 |
20120181440 | Pastes For Photoelectric Conversion Layers Of X-Ray Detectors, X-Ray Detectors And Methods Of Manufacturing The Same - A paste for a photoelectric conversion layer used in an X-ray detector includes photoconductive particles, an organic polymer binder, a first organic solvent to dissolve the organic polymer binder, and a second organic solvent. The second organic solvent has a boiling point in a range of between about 150° C. and about 210° C., inclusive. | 07-19-2012 |
20120210054 | DATA STORAGE MEDIUM HAVING SECURITY FUNCTION AND OUTPUT APPARATUS THEREFOR - Provided are a storage medium, which has a security function, for storing media content and an output apparatus for outputting data stored in the storage medium. The storage medium includes a controller for converting at least one of a position of pins of a connector and a storage position of media content in a memory unit in order to control transmission of the media content in the memory unit to the output apparatus. | 08-16-2012 |
20120211663 | X-Ray Detectors Including Diffusion Barrier Films - An X-ray detector includes a photoconductor, a first diffusion barrier film on a first surface of the photoconductor, at least one pixel electrode on the first diffusion barrier film, a signal transmitting unit to process an electrical signal output from the at least one pixel electrode, and a common electrode on a second surface of the photoconductor opposite to the first surface of the photoconductor. | 08-23-2012 |
20120223241 | Large-Scale X-Ray Detectors - An X-ray detector including a plurality of chips on a printed circuit board, each of the plurality of chips including a plurality of pixel pads on a center portion of the printed circuit board and a plurality of pin pads surrounding the plurality of pixel pads, a plurality of pixel electrodes on and corresponding to the plurality of chips, a redistribution layer electrically connecting the plurality of pixel electrodes and the plurality of pixel pads, a plurality of first electrode pads on a surface opposite to a surface of the plurality of chips including the plurality of pin pads, a wire electrically connecting the plurality of first electrode pads and the plurality of pin pads, a photoconductor on the plurality of pixel electrodes, and a common electrode on the photoconductor. | 09-06-2012 |
20120230080 | Variable Resistance Device, Semiconductor Device Including The Variable Resistance Device, And Method Of Operating The Semiconductor Device - According to an example embodiment, a method of operating a semiconductor device includes applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value, sensing first current flowing through the variable resistance device to which the first voltage is applied, determining a second voltage used to change the resistance value of the variable resistance device from the second resistance value to the first resistance value based on a distribution of the sensed first current, and applying the determined second voltage to the variable resistance device. | 09-13-2012 |
20120267513 | Light-Sensing Apparatus And Method Of Driving The Same - According to an example embodiment, a light-sensing apparatus may include an array of light-sensing pixels, a first gate driver, and a signal output unit. Each of the light-sensing pixels may include a light sensor transistor configured to sense light, a switch transistor configured to output a light-sensing signal from the light sensor transistor, and a conductive light-shielding film on a light-incident surface of the switch transistor. The light sensor transistor and the switch transistor may have the same oxide semiconductor transistor structure. The first gate driver may be configured to provide a gate voltage and a negative bias voltage to each of the light-sensing pixels. The signal output unit may be configured to receive the light-sensing signal from each of the light-sensing pixels and output a data signal. | 10-25-2012 |
20120274608 | SIMPLIFIED LIGHT SENSING CIRCUIT, LIGHT SENSING APPARATUS INCLUDING THE LIGHT SENSING CIRCUIT, METHOD OF DRIVING THE LIGHT SENSING APPARATUS, AND IMAGE ACQUISITION APPARATUS AND OPTICAL TOUCH SCREEN APPARATUS INCLUDING THE LIGHT SENSING APPARATUS - In a simplified light sensing circuit, a light sensing apparatus including the light sensing circuit, a method of driving the light sensing apparatus, and an image acquisition apparatus and optical touch screen apparatus including the light sensing apparatus, the light sensing circuit includes an oxide semiconductor transistor including a channel layer including an oxide semiconductor material, for each pixel. The oxide semiconductor transistor is configured to operate as a light sensing device that senses light and a switch that outputs light sensing data. | 11-01-2012 |
20120282734 | OXIDE THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - An oxide thin film transistor and a method of manufacturing the oxide TFT are provided. The oxide thin film transistor (TFT) including: a gate; a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel; a gate insulator disposed between the gate and the channel; and a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer. | 11-08-2012 |
20120295399 | OXIDE-BASED THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ZINC OXIDE ETCHANT, AND A METHOD OF FORMING THE SAME - Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession. | 11-22-2012 |
20120319076 | MULTI-BIT MEMORY ELEMENTS, MEMORY DEVICES INCLUDING THE SAME, AND METHODS OF MANUFACTURING THE SAME - In one embodiment, the memory element may include a first electrode, a second electrode spaced apart from the first electrode, a memory layer between the first electrode and the second electrode, and an auxiliary layer between the memory layer and the second electrode. The auxiliary layer provides a multi-bit memory characteristic to the memory layer. | 12-20-2012 |
20130009145 | Transistor, Electronic Device Including Transistor, And Manufacturing Methods Thereof - A transistor may include an active layer having a plurality of oxide semiconductor layers and an insulating layer disposed therebetween. The insulating layer may include a material that has higher etch selectivity with respect to at least one of the plurality of oxide semiconductor layers. The electronic device may include a first transistor and a second transistor connected to the first transistor. The second transistor may include an active layer having a different structure from that of the active layer included in the first transistor. The active layer of the second transistor may have the same structure as one of the plurality of oxide semiconductor layers constituting the active layer of the first transistor. | 01-10-2013 |
20130026558 | SEMICONDUCTOR DEVICES INCLUDING VARIABLE RESISTANCE MATERIAL AND METHODS OF FABRICATING THE SAME - The semiconductor device includes an insulating substrate, a channel layer over the insulating substrate, a gate at least partially extending from an upper surface of the channel layer into the channel layer, a source and a drain respectively at opposing sides of the gate on the channel layer, a gate insulating layer surrounding, the gate and electrically insulating the gate from the channel layer, the source, and the drain, and a variable resistance material layer between the insulating substrate and the gate. | 01-31-2013 |
20130043451 | Nonvolatile Memory Elements And Memory Devices Including The Same - Nonvolatile memory elements and memory devices including the nonvolatile memory elements. A nonvolatile memory element may include a memory layer between two electrodes, and the memory layer may have a multi-layer structure. The memory layer may include a base layer and an ionic species exchange layer and may have a resistance change characteristic due to movement of ionic species between the base layer and the ionic species exchange layer. The ionic species exchange layer may have a multi-layer structure including at least two layers. The nonvolatile memory element may have a multi-bit memory characteristic due to the ionic species exchange layer having the multi-layer structure. The base layer may be an oxygen supplying layer, and the ionic species exchange layer may be an oxygen exchange layer. | 02-21-2013 |
20130050148 | TOUCH SENSING AND REMOTE SENSING OPTICAL TOUCH SCREEN APPARATUSES - Optical touch screen apparatuses with remote sensing and touch sensing by using a light sensor transistor including an oxide semiconductor transistor. The optical touch screen apparatus includes a pixel array of a plurality of sensing pixels arranged in a plurality of rows and a plurality of columns. Each of the sensing pixels includes a light sensing pixel for sensing light that is irradiated by an external light source and a touch sensing pixel for sensing display light that is reflected by a screen touch. The light sensing pixel includes a first light sensor transistor and a first switch transistor connected each other in series, and the touch sensing pixel includes a second light sensor transistor and a second switch transistor connected each other in series. | 02-28-2013 |
20130051125 | METHOD OF OPERATING SEMICONDUCTOR DEVICE INCLUDING VARIABLE RESISTANCE DEVICE - According to an example embodiment, a method of operating a semiconductor device having a variable resistance device includes: applying a first voltage to the variable resistance device to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing a first current flowing through the variable resistance device to which the first voltage is applied; determining a second voltage used for changing the variable resistance device from the second resistance value to the first resistance value, based on a dispersion of the sensed first current; and applying the determined second voltage to the variable resistance device. | 02-28-2013 |
20130051164 | NONVOLATILE MEMORY DEVICES AND METHODS OF DRIVING THE SAME - A method of driving a nonvolatile memory device including applying a reset voltage to a unit memory cell, reading a reset current of the unit memory cell, confirming whether the reset current is within a first current range, if the reset current is not within the first current range, changing the reset voltage and applying a changed reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell, if the reset current is within the first current range, confirming whether a difference between the present reset current and an immediately previous set current is within a second current range, and, if the difference is not within the second current range, applying the reset voltage or applying again the reset voltage to the unit memory cell after applying a set voltage to the unit memory cell. | 02-28-2013 |
20130058153 | SEMICONDUCTOR DEVICES INCLUDING VARIABLE RESISTANCE ELEMENTS AND METHODS OF OPERATING SEMICONDUCTOR DEVICES - In a method of operating a semiconductor device, a resistance value of a variable resistance element is changed from a first resistance value to a second resistance value by applying a first voltage to the variable resistance element; and a first current that flows through the variable resistance element is sensed. A second voltage for changing the resistance value of the variable resistance element from the second resistance value to the first resistance value is modulated based on a dispersion of the first current, and the first voltage is re-applied to the variable resistance element based on a dispersion of the first current. | 03-07-2013 |
20130062602 | Oxide Semiconductor Transistors And Methods Of Manufacturing The Same - Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions. | 03-14-2013 |
20130063400 | LIGHT-SENSING APPARATUS, METHOD OF DRIVING THE LIGHT-SENSING APPARATUS, AND OPTICAL TOUCH SCREEN APPARATUS INCLUDING THE LIGHT-SENSING APPARATUS - In one embodiment, a light-sensing apparatus includes a light-sensing pixel array that has a plurality of light-sensing pixels arranged in rows and columns; and a gate driver configured to provide the light-sensing pixels with a gate voltage and a reset signal that have inverted phases. Each of the light-sensing pixels includes a light sensor transistor configured to sense light and a switch transistor configured to output a light-sensing signal from the light-sensor transistor. The gate driver includes a plurality of gate lines connected to gates of the switch transistors, a plurality of reset lines connected to gates of the light sensor transistors, and a plurality of phase inverters each connected between a corresponding reset line and a gate line. Thus, when a gate voltage is applied to one of the plurality of gate lines, a reset signal with an inversed phase to the gate voltage may be applied to a corresponding reset line. | 03-14-2013 |
20130075608 | IMAGE SENSOR AND X-RAY IMAGE SENSING MODULE INCLUDING THE SAME - According to example embodiments, an image sensor includes a charge sensing amplifier configured to amplify charges sensed by a sensing unit. The charge sensing amplifier includes an input terminal, an amplification terminal, an output terminal, a first capacitor connected between the input terminal and the amplification terminal, a first switch connected between the input terminal and the amplification terminal, a second capacitor connected between the amplification terminal and the output terminal, and a second switch connected between the output terminal and a reference voltage terminal. | 03-28-2013 |
20130088460 | OPTICAL TOUCH SCREEN APPARATUS AND METHOD OF MANUFACTURING THE OPTICAL TOUCH SCREEN APPARATUS - An optical touch screen apparatus that includes a display pixel including a display cell and a driving transistor, the display cell configured to display an image and the driving transistor configured to turn on or off the display cell, the driving transistor having a double gate structure; and a light-sensing pixel including a light-sensing transistor and a switch transistor, the light-sensing transistor configured to sense incident light and the switch transistor configured to output data from the light-sensing transistor, the switch transistor having the double gate structure, wherein the double gate structure is a structure in which a bottom gate and a top gate are arranged such that a channel layer is disposed therebetween. The top gate may be formed together when forming a transparent electrode in the pixel, and thus even when the top gate is further included, the number of manufacturing processes is not increased. | 04-11-2013 |
20130121060 | NON-VOLATILE MEMORY ELEMENTS AND MEMORY DEVICES INCLUDING THE SAME - Non-volatile memory elements, memory devices including the same, and methods for operating and manufacturing the same may include a memory layer between a first electrode and a second electrode spaced apart from the first electrode. The memory layer may include a first material layer and a second material layer, and may have a resistance change characteristic due to movement of ionic species between the first material layer and the second material layer. At least the first material layer of the first and second material layers may be doped with a metal. | 05-16-2013 |
20130146829 | RESISTIVE RANDOM ACCESS MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME - Resistive random access memory (RRAM) devices, and methods of manufacturing the same, include a RRAM device having a switching device, and a storage node connected to the switching device, wherein the storage node includes a first electrode, a metal oxide layer, and a second electrode sequentially stacked. The metal oxide layer contains a semiconductor material element affecting resistance of the storage node. | 06-13-2013 |
20130168563 | MULTI-ENERGY RADIATION DETECTORS AND METHODS OF MANUFACTURING THE SAME - A multi-energy radiation detector may include an array substrate including a plurality of unit circuits, and/or a photoelectric conversion layer on the array substrate. The photoelectric conversion layer may include a plurality of regions having thicknesses different from each other. A method of manufacturing a multi-energy radiation detector may include forming gate and first electrodes by forming and patterning a first metal layer on a substrate; forming an insulating layer on the gate and first electrodes; forming a channel layer by forming and patterning a semiconductor layer on the insulating layer; forming source, drain, and second electrodes by forming and patterning a second metal layer on the channel layer; forming a passivation layer to cover the source, drain, and second electrodes; forming a first photoelectric conversion layer on the passivation layer; and/or forming a second photoelectric conversion layer on part of the first photoelectric conversion layer. | 07-04-2013 |
20130168770 | HIGH-VOLTAGE OXIDE TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A high-voltage oxide transistor includes a substrate; a channel layer disposed on the substrate; a gate electrode disposed on the substrate to correspond to the channel layer; a source contacting a first side of the channel layer; and a drain contacting a second side of the channel layer, wherein the channel layer includes a plurality of oxide layers, and none of the plurality of oxide layers include silicon. The gate electrode may be disposed on or under the channel layer. Otherwise, the gate electrodes may be disposed respectively on and under the channel layer. | 07-04-2013 |
20130175431 | DETECTOR HAVING LARGE AREA AND METHOD OF MANUFACTURING THE SAME - A detector includes a substrate; two first regions, each first region having a linear shape, and the two first regions being separated from each other on the substrate and arranged in parallel; and a pixel region provided between the two first regions and including a plurality of pixels, the pixel region including a plurality of second regions perpendicular to the two first regions, each of the two first regions including a peripheral circuit portion, each of the plurality of second regions including a driver line, and a width of each of the plurality of second regions being equal to or less than a width of a single pixel. | 07-11-2013 |
20130208204 | THIN FILM TRANSISTOR AND DISPLAY PANEL EMPLOYING THE SAME - A thin film transistor is provided. The transistor includes a gate; a first passivation layer covering the gate; a channel layer disposed on the first passivation layer; a source and a drain that are disposed on the first passivation layer and contact two sides of the channel layer; a second passivation layer covering the channel layer, the source, and the drain; first and second transparent electrode layers that are disposed on the second passivation layer and spaced apart from each other; a first transparent conductive via that penetrates the second passivation layer and connects the source and the first transparent electrode layer; and a second transparent conductive via that penetrates the second passivation layer and connects the drain and the second transparent electrode layer. A cross-sectional area of the gate is larger than a cross-sectional area of the channel layer, the source, and the drain combined. | 08-15-2013 |
20130300509 | FREQUENCY TUNING APPARATUS, OPERATING METHOD THEREOF, AND RF CIRCUIT INCLUDING THE FREQUENCY TUNING APPARATUS - A frequency tuning apparatus may include an oscillator and a memory element connected to the oscillator. The memory element may have a variable resistance. An oscillation frequency of the oscillator may vary according to a resistance state of the memory element. The oscillator may be a ring oscillator. The memory element may be connected to an input terminal or a power terminal of the oscillator. | 11-14-2013 |
20130301338 | HYBRID RESISTIVE MEMORY DEVICES AND METHODS OF OPERATING AND MANUFACTURING THE SAME - Hybrid resistive memory devices and methods of operating and manufacturing the same, include at least two resistive memory units. At least one of the at least two resistive memory units is a resistive memory unit configured to operate in a long-term plasticity state. | 11-14-2013 |
20140042380 | RESISTANCE SWITCHING MATERIAL ELEMENT AND DEVICE EMPLOYING THE SAME - According to example embodiments, a resistance switching material element includes a resistance switching material layer between a first electrode and a second electrode, and a self-rectifying layer provided between the resistance switching material layer and one of the first and second electrodes. The second electrode may be on the first electrode. | 02-13-2014 |
20140071367 | DISPLAY APPARATUSES AND METHODS OF OPERATING THE SAME - Provided are display apparatuses and methods of operating the same. In a display apparatus, a display image may be continuously held for longer than about 10 msec after the power of the display panel is turned off. The display apparatus may indicate a liquid crystal display (LCD) apparatus including an oxide thin film transistor (TFT). Off leakage current of the oxide TFT may be less than about 10 | 03-13-2014 |
20140092668 | RESISTIVE SWITCHING DEVICES AND MEMORY DEVICES INCLUDING THE SAME - A resistive switching device includes a first material layer between a first electrode and a second electrode. The first material layer has a first region and a second region parallel to the first region. The first region corresponds to a conducting path formed in the first material layer, and is configured to switch from a low-resistance state to a high-resistance state in response to an applied voltage that is greater than or equal to a first voltage. The second region is configured to switch to a first resistance value that is less than a resistance value of the first region in the high-resistance state when the applied voltage is greater than or equal to a second voltage. The first region remains constant or substantially constant when the second region has the first resistance value. | 04-03-2014 |
20140117202 | DRIVER CIRCUIT AND READOUT CIRCUIT - A driver circuit outputs a result of classifying and counting photons based on one or more energy levels to a column line. The driver circuit includes a multiplexer for receiving the result from a counter, a driving inverter for receiving a signal from the multiplexer and a power supply, and a switch connected between the power supply and an input terminal of the driving inverter. | 05-01-2014 |
20140124728 | RESISTIVE MEMORY DEVICE, RESISTIVE MEMORY ARRAY, AND METHOD OF MANUFACTURING RESISTIVE MEMORY DEVICE - A resistive memory device has a structure in which a source, a channel layer, a drain, and a resistive memory layer are sequentially formed in a particular direction, with a gate electrode formed around the channel layer. The source, channel layer, and drain may be vertically stacked on a substrate, and the gate electrode may be formed completely around the channel layer. | 05-08-2014 |
20140133134 | COLOR OPTICAL PEN FOR ELECTRONIC PANEL - A color optical pen includes a tip unit, a pen body unit attached to the tip unit; a pressure sensor that is disposed in the tip unit and configured to sense at least contact between a display unit of a terminal device and the tip unit; a light source that is disposed in the pen body unit and is configured to output light through the tip unit, if the pressure sensor senses the contact; a color selection switch that is disposed on the pen body, the color selection switch configured to select a color in response to operation by a user; and a driver configured to drive the light source at a frequency or pattern based on operation of the color selection switch. | 05-15-2014 |
20140158900 | PHOTON-COUNTING DETECTOR AND READOUT CIRCUIT - A photon-counting detector configured to detect photons included in multi-energy radiation. The photon-counting detector includes a pixel area configured to absorb photons incident thereto, and bias circuits configured to supply one of a bias voltage and a bias current to electronic devices in the pixel area, wherein the bias circuits are in the pixel area. | 06-12-2014 |
20140210035 | DIGITAL SILICON PHOTOMULTIPLIER DETECTOR CELLS - A silicon photomultiplier detector cell may include a photodiode region and a readout circuit region formed on a same substrate. The photodiode region may include a first semiconductor layer exposed on a surface of the silicon photomultiplier detector cell and doped with first type impurities; a second semiconductor layer doped with second type impurities; and/or a first epitaxial layer between the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may contact the first semiconductor layer and the second semiconductor layer. The first epitaxial layer may be doped with the first type impurities at a concentration lower than a concentration of the first type impurities of the first semiconductor layer. | 07-31-2014 |
20140246643 | MEMORY DEVICE AND APPARATUS INCLUDING THE SAME - A memory device may include a first electrode and a second electrode spaced apart from the first electrode. The memory device may further include a memory element disposed between the first electrode and the second electrode and a switching element disposed between the first electrode and the second electrode. The switching element may be configured to control signal access to the memory element. The memory device may further include a barrier layer disposed between the memory element and the switching element, the barrier layer including an insulation material. | 09-04-2014 |
20150063543 | RADIATION DETECTORS, METHODS OF MANUFACTURING THE RADIATION DETECTORS, AND RADIATION IMAGING SYSTEMS INCLUDING THE RADIATION DETECTORS - A radiation detector may include: a first photoconductor layer including a plurality of photosensitive particles; and/or a second photoconductor layer on the first photoconductor layer, and including a plurality of crystals obtained by crystal-growing photosensitive material. At least some of the plurality of photosensitive particles of the first photoconductor layer may fill gaps between the plurality of crystals of the second photoconductor layer. A method of manufacturing a radiation detector may include: forming a first photoconductor layer by applying paste, including solvent mixed with a plurality of photosensitive particles, to a first substrate; forming a second photoconductor layer by crystal-growing photosensitive material on a second substrate; pressing the crystal-grown second photoconductor layer on the first photoconductor layer that is applied to the first substrate; and/or removing the solvent in the first photoconductor layer via a drying process. | 03-05-2015 |