Patent application number | Description | Published |
20080203387 | Thin film transistor and method of manufacturing the same - Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor may include a gate; a channel layer; a source and a drain, the source and the drain being formed of metal; and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain. The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain. | 08-28-2008 |
20080237687 | Flash memory device - Provided is a flash memory device including a gate structure on a substrate. The flash memory device includes a charge supply layer including a ZnO based material formed between a substrate and a gate structure or formed on the gate structure. Accordingly, the flash memory device can be formed to be of a bottom gate type or of a top gate type by including the charge supply layer. Also, the flash memory device may be realized to be any of a charge trap type and a floating gate type. | 10-02-2008 |
20080258140 | Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor - Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation. | 10-23-2008 |
20080277663 | Thin film transistor and method of manufacturing the same - Provided is a thin film transistor that includes a substrate on which an insulating layer is formed, a gate formed on a region of the insulating layer, a gate insulating layer formed on the insulating layer and the gate, a channel region formed on the gate insulating layer on a region corresponding to the location of the gate, a source and a drain respectively formed by contacting either side of the channel region; and a passivation layer formed of a compound made of a group II element and a halogen element on the channel region. | 11-13-2008 |
20090001432 | Channel layer for a thin film transistor, thin film transistor including the same, and methods of manufacturing the same - Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer. | 01-01-2009 |
20090008638 | Oxide semiconductor, thin film transistor including the same and method of manufacturing a thin film transistor - Example embodiments relate to an oxide semiconductor including zinc oxide (ZnO), a thin film transistor including a channel formed of the oxide semiconductor and a method of manufacturing the thin film transistor. The oxide semiconductor may include a Ga | 01-08-2009 |
20090068782 | Nano-elastic memory device and method of manufacturing the same - A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies. | 03-12-2009 |
20090095981 | Complementary metal oxide semiconductor device and method of manufacturing the same - Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. The CMOS device comprises an epi-layer that may be formed on a substrate; a first semiconductor layer and a second semiconductor layer that may be formed on different regions of the epi-layer, respectively; and a PMOS transistor and a NMOS transistor that may be formed on the first and second semiconductor layers, respectively. | 04-16-2009 |
20090285030 | MULTI-BIT NONVOLATILE MEMORY DEVICES AND METHODS OF OPERATING THE SAME - A memory device may include a channel including at least one carbon nanotube. A source and a drain may be arranged at opposing ends of the channel and may contact different parts of the channel. A first storage node may be formed under the channel, and a second storage node may be formed on the channel. A first gate electrode may be formed under the first storage node and a second gate electrode may be formed on the second storage node. | 11-19-2009 |
20110101342 | ZnO based semiconductor devices and methods of manufacturing the same - A semiconductor device may include a composite represented by Formula 1 below as an active layer. | 05-05-2011 |
20110101343 | ZnO based semiconductor devices and methods of manufacturing the same - A semiconductor device may include a composite represented by Formula 1 below as an active layer. | 05-05-2011 |