Patent application number | Description | Published |
20080198467 | Standard Component For Length Measurement, Method For Producing The Same, and Electron Beam Metrology System Using The Same - A standard component for length measurement includes a first diffraction grating and a second diffraction grating. Each of components of the second diffraction grating is disposed between components of the first diffraction grating. | 08-21-2008 |
20080203285 | Charged particle beam measurement equipment, size correction and standard sample for correction - Correction of widths obtained by measurement of a sample with the use of a scanning electron microscope is executed with greater precision. Use is made of a standard sample | 08-28-2008 |
20080210867 | Scanning Electron Microscope and Calibration of Image Distortion - In method and apparatus for obtaining a scanning electron microscope image devoid of distortion by measuring a scanning distortion and calibrating the scanning distortion, there occurs a problem that an error takes place in dimension control owing to a scanning distortion of an electron beam. To cope with this problem, an image is obtained by scanning a predetermined region with the electron beam, a plurality of regions are selected from the image, the pattern pitch is measured in each of the regions and a scanning distortion amount is calculated from the result of measurement and then corrected. | 09-04-2008 |
20080251868 | Standard component for calibration and electron-beam system using the same - The invention provides a standard component for calibration that enables a calibration position to be easily specified in order to calibrate accurately a scale factor in the electron-beam system, and provides an electron-beam system using it. High-accuracy metrology calibration capable of specifying a calibration position can be realized by forming a mark pattern or labeled material for identifying the calibration position in proximity of a superlattice pattern of the standard component for system calibration. The standard component for calibration is one that calibrates a scale factor of an electron-beam system based on a signal of secondary charged particles detected by irradiation of a primary electron beam emitted from the electron-beam system on a substrate having a cross section of a superlattice of a multi-layer structure in which different materials are deposited alternately. The substrate have linear patterns that are on the substrate surface parallel to the multi-layer and are arranged at a fixed interval in a direction crossing the cross section of the superlattice pattern, and is so configured that the cross sections of the linear patterns may exist on substantially the same plane of the superlattice cross section, so that the linear patterns enable a position of the superlattice pattern to be identified. | 10-16-2008 |
20090136116 | Method and apparatus for inspecting reticle - The present invention provides a reticle inspection technology that enables a relative position between patterns to be evaluated for a pattern that may become a defect at the time of exposure to a sample, such as a wafer, in the double patterning technology on the same layer. An apparatus for inspecting a reticle for inspecting two reticles that are used in order to form patterns in the same layer on a substrate using the double patterning technology has: a coordinate information input unit for inputting coordinate information of a pattern of a measuring object; an image input unit for acquiring images of patterns of the two reticles based on the obtained coordinate information; an image overlay unit for overlaying the images of the two reticles at the same coordinates; a relative position calculation unit for finding the relative position between the patterns on the two reticles; an evaluation unit for assigning an index of the overlaying accuracy based on the relative position and evaluates whether the two reticles need repair; and an evaluation result output unit for outputting an evaluation result. | 05-28-2009 |
20090206252 | Defect inspection method and its system - A method for enabling management of fatal defects of semiconductor integrated patterns easily, the method enables storing of design data of each pattern designed by a semiconductor integrated circuit designer, as well as storing of design intent data having pattern importance levels ranked according to their design intents respectively. The method also enables anticipating of defects to be generated systematically due to the characteristics of the subject exposure system, etc. while each designed circuit pattern is exposed and delineated onto a wafer in a simulation carried out beforehand and storing those defects as hot spot information. Furthermore, the method also enables combining of the design intent data with hot spot information to limit inspection spots that might include systematic defects at high possibility with respect to the characteristics of the object semiconductor integrated circuit and shorten the defect inspection time significantly. | 08-20-2009 |
20110133065 | Standard Member for Correction, Scanning Electron Microscope Using Same, and Scanning Electron Microscope Correction Method - Disclosed is a standard specimen, used with an electron microscope to correct the magnification with high precision. A standard member used for correction corrects a scanning electron microscope that measures a pattern within an observation region based on information about the secondary electrons generated by scanning incident electron lines on the observation region on a measurement specimen, or information about the reflected electron intensity. The standard member has a first pattern region that corrects the magnification and that comprises a concavo-convex pattern (line/space pattern) in the cross section of a multilayer film that has been laminated, and a second pattern region near the first pattern at almost the same height that does not contain a pattern with the same periodicity as the pattern pitch size of the first region and that is used for beam adjustment. | 06-09-2011 |
20110204225 | ION Beam System and Machining Method - An ion beam machining system which performs a predetermined machining of a sample by irradiating the sample with an ion beam includes a beam spot former which forms a beam spot shape of the ion beam to be non-axially symmetric in a perpendicular plane with respect to an irradiation axis of the ion beam, and an axis orientator which orients one axis of the beam spot at the ion beam irradiation position on the sample in a predetermined direction. | 08-25-2011 |
20110208477 | MEASURING METHOD OF PATTERN DIMENSION AND SCANNING ELECTRON MICROSCOPE USING SAME - Provided is a technology of performing more highly accurate semiconductor inspection by detecting a pattern edge which does not contribute as a mask in an etching step and measuring a pattern without including such edge at the time of calculating dimensions. Since a pattern portion having a protruding shape is to be removed at the time of etching, a scanning electron microscope image is acquired such that the protruding edge not functioning as a mask is to be excluded at the time of calculating dimensions in pattern inspection. Then, the shape of the pattern edge is calculated, the portion of the protruding edge is corrected, and pattern dimensions mainly obtained from recessed edges are calculated. | 08-25-2011 |
20110210250 | CALIBRATION STANDARD MEMBER, METHOD FOR MANUFACTURING THE MEMBER AND SCANNING ELECTRONIC MICROSCOPE USING THE MEMBER - This invention provides a standard member allowing magnification calibration for use in an electron microscope to be performed with high precision. A (110) or (100) oriented silicon substrate including a magnification calibration pattern comprised of a constant pitch periodic pattern and a (110) or (100) oriented silicon substrate not including the constant pitch periodic pattern are bonded together by means of bonding without using an adhesive agent, while aligning the plane directions of the surfaces of the two substrates in the same orientation. Then, the thus bonded substrates are cleaved or diced so that their (111) surfaces or (110) surfaces become cross-section surfaces. Further, by selectively etching one side of the constant pitch periodic pattern, a standard member with no level difference and no damage to superlattice patterns and having a constant pitch concavity and convexity periodic pattern in a cross-section surface vertical to the substrate surface is created. | 09-01-2011 |
20110274341 | CHARGED BEAM DEVICE - In order to provide a charged beam device capable of obtaining a precise image of a sample surface pattern while improving the accuracy of automatic focus/astigmatism correction, there are provided an electron gun ( | 11-10-2011 |
20120212602 | PATTERN DIMENSION MEASUREMENT METHOD AND CHARGED PARTICLE BEAM MICROSCOPE USED IN SAME - In order to provide a pattern dimension measurement method with a small measured error and excellent reproducibility even though defocus occurs and a charged particle beam microscope used in the same, in a method for applying a charged particle beam to a specimen formed with a pattern to measure a pattern dimension from a signal intensity distribution of signal charged particles from the specimen, edge index positions (X | 08-23-2012 |
20120298865 | SCANNING ELECTRON MICROSCOPE - Disclosed is a scanning electron microscope provided with a calculation device ( | 11-29-2012 |
20130299699 | STANDARD MEMBER FOR CALIBRATION AND METHOD OF MANUFACTURING THE SAME AND SCANNING ELECTRON MICROSCOPE USING THE SAME - A standard member for automatically, stably, and highly accurately performing magnification calibration used in an electron microscope, the standard member including, on the same plane, a multilayer film cross section formed by alternately laminating materials different from each other, a plurality of first mark patterns arranged across a first silicon layer and in parallel to the multilayer film cross section, at least a pair of second mark patterns arranged across a second silicon layer thicker than the first silicon layer on the opposite side of the first mark patterns with respect to the multilayer film cross section and in parallel to the multilayer film cross section, and a silicon layer arranged on the outer side of the first mark patterns and the second mark patterns with respect to the multilayer film cross section. | 11-14-2013 |