Patent application number | Description | Published |
20080303099 | Semiconductor Device and Fabrication Method Thereof - CMISFETs having a symmetrical flat band voltage, the same gate electrode material, and a high permittivity dielectric layer is provided for a semiconductor device including n-MISFETs and p-MISFETs, and a fabrication method thereof, the n-MISFETs including: a first metal oxide layer | 12-11-2008 |
20080318442 | Semiconductor device manufacturing method and substrate processing apparatus - The present invention has an object of providing a substrate processing apparatus and a semiconductor device manufacturing method that can prevent adverse effects on electrical characteristics and provide a thinner EOT. | 12-25-2008 |
20100291763 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Oxidation of a metal film disposed under a high permittivity insulation film can be suppressed, and the productivity of a film-forming process can be improved. In a method of manufacturing a semiconductor device, a first high permittivity insulation film is formed on a substrate by alternately repeating a process of supplying a source into a processing chamber in which the substrate is accommodated and exhausting the source and a process of supplying a first oxidizing source into the processing chamber and exhausting the first oxidizing source; and a second high permittivity insulation film is formed on the first high permittivity insulation film by alternately repeating a process of supplying the source into the processing chamber and exhausting the source and a process of supplying a second oxidizing source different from the first oxidizing source into the processing chamber and exhausting the second oxidizing source. | 11-18-2010 |
20110003482 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING SYSTEM - Provided is a method of manufacturing a semiconductor device. In the method, an aluminium-containing insulation film is formed on an electrode film of a substrate by alternately repeating a process of supplying an aluminium precursor into a processing chamber in which the substrate is accommodated and exhausting the aluminium precursor from the processing chamber and a process of supplying an oxidizing or nitriding precursor into the processing chamber and exhausting the oxidizing or nitriding precursor from the processing chamber; and a high permittivity insulation film different from the aluminium-containing insulation film is formed on the aluminium-containing insulation film by alternately repeating a process of supplying a precursor into the processing chamber and exhausting the precursor from the processing chamber and a process of supplying an oxidizing precursor into the processing chamber and exhausting the oxidizing precursor from the processing chamber. In addition, heat treatment is performed on the substrate. | 01-06-2011 |
20110024875 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS - A high-k capacitor insulating film stable at a higher temperature is formed. There is provided a method of manufacturing a semiconductor device. The method comprises: forming an amorphous first insulating film comprising a first element on a substrate; adding a second element different from the first element to the first insulating film so as to form an amorphous second insulating film on the substrate; and annealing the second insulating film at a predetermined annealing temperature so as to form a third insulating film by changing a phase of the second insulating film. The concentration of the second element added to the first insulating film is controlled according to the annealing temperature. | 02-03-2011 |
20130065391 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate. | 03-14-2013 |
20130122720 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A high-k capacitor insulating film stable at a higher temperature is formed. There is provided a method of manufacturing a semiconductor device. The method comprises: forming a first amorphous insulating film comprising a first element on a substrate; adding a second element different from the first element to the first amorphous insulating film so as to form a second amorphous insulating film on the substrate; and annealing the second amorphous insulating film at a predetermined annealing temperature so as to form a third insulating film by changing a phase of the second amorphous insulating film. The concentration of the second element added to the first amorphous insulating film is controlled according to the annealing temperature. | 05-16-2013 |
20130309876 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device includes: housing a substrate into a processing chamber; and forming a metal nitride film on the substrate by supplying a source gas containing a metal element, a nitrogen-containing gas and a hydrogen-containing gas into the processing chamber; wherein in forming the metal nitride film, the source gas and the nitrogen-containing gas are intermittently supplied into the processing chamber, or the source gas and the nitrogen-containing gas are intermittently and alternately supplied into the processing chamber, or the source gas is intermittently supplied into the processing chamber in a state that supply of the nitrogen-containing gas into the processing chamber is continued, and the hydrogen-containing gas is supplied into the processing chamber during at least supply of the nitrogen-containing gas into the processing chamber. | 11-21-2013 |
20140242790 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A metal-containing film capable of adjusting a work function is formed. A first source containing a first metal element and a halogen element and a second source containing a second metal element different from the first metal element and an amino group are alternately supplied onto a substrate having a high-k dielectric film to form a composite metal nitride film on the high-k dielectric film. | 08-28-2014 |
20140256152 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND RECORDING MEDIUM - A substrate processing apparatus comprising: a processing chamber that can accommodate a plurality of substrates, the interior of which is divided into a plurality of zones; a gas supply system that supplies a first reactive gas, a second reactive gas, and an inert gas to each of the plurality of zones; and an exhaust system for removing the gas from the zones. A thin film is formed on the substrates in the zones by repeatedly executing a plurality of steps in relation to the zones, these steps include the following: a first reactive gas supply step; a first purge step; a second reactive gas supply step; and a second purge step. While the film is being formed, a control unit controls the gas supply system and the gas exhaust system so that the steps performed in the plurality of zones at the same time are different from one another. | 09-11-2014 |
20150111378 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - [PROBLEMS TO BE SOLVED] | 04-23-2015 |
20150155165 | METHOD OF PRODUCING COMPOSITE WAFER AND COMPOSITE WAFER - A method of producing a composite wafer including a semiconductor crystal layer, includes forming a sacrificial layer and the semiconductor crystal layer above a semiconductor crystal layer forming wafer in the stated order, etching the semiconductor crystal layer to partially expose the sacrificial layer and dividing the semiconductor crystal layer into a plurality of divided pieces, bonding the semiconductor crystal layer forming wafer and a transfer target wafer made of an inorganic material in such a manner that a first surface of the semiconductor crystal layer forming wafer faces and comes into contact with a second surface of the transfer target wafer, and etching the sacrificial layer to separate the transfer target wafer and the semiconductor crystal layer forming wafer from each other with the semiconductor crystal layer being left on the transfer target wafer. | 06-04-2015 |
20150187567 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A substrate processing apparatus processes a substrate by supplying a gas into a processing space. The apparatus includes a buffer space wherein the gas is dispersed, the buffer space disposed at an upstream side of the processing space; a transfer space where the substrate passes when transferred to the processing space; a first, a second and a third exhaust pipe connected to the transfer space, the buffer space and the processing space, respectively; a fourth exhaust pipe connected to downstream sides of the first exhaust pipe, the second exhaust pipe and the third exhaust pipe; a first vacuum pump disposed at the first exhaust pipe; a second vacuum pump disposed at the fourth exhaust pipe; a first valve disposed at the first exhaust pipe at a downstream side of the first vacuum pump; and a second and a third valve disposed at the second and the third exhaust pipe, respectively. | 07-02-2015 |
20150187652 | METHOD FOR PRODUCING A COMPOSITE WAFER AND A METHOD FOR PRODUCING A SEMICONDUCTOR CRYSTAL LAYER FORMING WAFER - A method for producing a composite wafer by using a forming wafer having a monocrystal layer, the method comprising:
| 07-02-2015 |
20150243507 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The method of manufacturing a semiconductor device in accordance with the present invention provides a metal-containing film capable of adjusting a work function. The including: (a) alternately supplying a first source containing a first metal element and a halogen element and a second source containing a second metal element different from the first metal element and at least one selected from the group consisting of a ligand of a methyl group, a ligand of an ethyl group and a ligand of a cyclopenta-based group onto a substrate in a process chamber to form a composite metal-containing film on the substrate; and (b) alternately supplying a third source containing a third metal element and a fourth source containing nitrogen onto the substrate in the process chamber to form a metal nitride film on the composite metal-containing film. | 08-27-2015 |
20150279663 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - Provided is a technique of controlling a work function of a metal film. A composite metal nitride film is formed on a substrate present in a process chamber by alternately supplying a first source and a second source to the substrate, wherein the first source contains a first metal element, the second source contains an ethyl ligand and a second metal element that is different from the first metal element, and a bond between the second metal element and a nitrogen element in the composite metal nitride film has crystallinity. | 10-01-2015 |
20150325447 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes forming a film having a predetermined thickness and containing a first metal element, carbon and nitrogen on a substrate by: (a) forming a first layer containing the first metal element and carbon by supplying a metal-containing gas containing the first metal element and a carbon-containing gas to the substrate M times and (b) forming a second layer containing the first metal element, carbon and nitrogen by supplying a nitrogen-containing gas to the substrate having the first layer formed thereon N times to nitride the first layer, wherein M and N are selected in a manner that a work function of the film has a predetermined value (where M and N are natural numbers). | 11-12-2015 |
20150340226 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device by processing a substrate by supplying a processing space with a gas dispersed in a buffer space disposed at an upstream side of the processing space is provided. The method includes (a) transferring the substrate into the processing space while exhausting a transfer space of the substrate by a first vacuum pump; (b) closing a first valve disposed at a downstream side of the first vacuum pump; (c) supplying the gas into the processing space via the buffer space; and (d) exhausting the buffer space through an exhaust pipe connected to a downstream side of the first valve. | 11-26-2015 |
Patent application number | Description | Published |
20110163452 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS - Provided is a semiconductor device including a metal film which can be formed with lower costs but still mange to have a necessary work function and oxidation resistance. The semiconductor device includes an insulating film disposed on a substrate; and a metal film disposed adjacent to the insulating film. The metal film includes a stacked structure of a first metal film and a second metal film. The oxidation resistance of the first metal film is greater than that of the second metal film. The second metal film has a work function greater than 4.8 eV and is different from the first metal film in material. The first metal film is disposed between the second metal film and the insulating film. | 07-07-2011 |
20120261773 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SYSTEM OF PROCESSING SUBSTRATE - Disclosed is a semiconductor device that comprises a gate insulating film formed on a semiconductor substrate; a first conductive metal-containing film formed on the gate insulating film; a second conductive metal-containing film, formed on the first metal-containing film, to which aluminum is added; and a silicon film formed on the second metal-containing film. | 10-18-2012 |
20140084389 | Method of Manufacturing Semiconductor Device, Substrate Processing Method and Apparatus, Non-Transitory Computer Readable Recording Medium, and Semiconductor Device - Provided are a semiconductor device manufacturing method by which a semiconductor device in which a threshold voltage is suppressed from changing can be manufactured, a substrate processing method and apparatus, a non-transitory computer-readable recording medium, and the semiconductor device. The semiconductor device manufacturing method includes forming an amorphous first oxide film including a first element on a substrate, and modifying the first oxide film to an amorphous second oxide film including the first element and a second element different from the first element by adding the second element to the first oxide film. The first element includes at least one element selected from a group consisting of aluminum, yttrium and lanthanum. A concentration of the second element in the second oxide film is controlled to be lower than that of the first element in the second oxide film. | 03-27-2014 |
20140179086 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate. | 06-26-2014 |
20140295667 | Method of Manufacturing Semiconductor Device - To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate. | 10-02-2014 |
20150162200 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SYSTEM OF PROCESSING SUBSTRATE - A semiconductor device includes a gate insulating film formed on a semiconductor substrate; a first conductive metal-containing film formed on the gate insulating film; a second conductive metal-containing film, formed on the first metal-containing film, to which aluminum is added; and a silicon film formed on the second metal-containing film. | 06-11-2015 |
20150200102 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate. | 07-16-2015 |
20150200103 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate. | 07-16-2015 |
20150200104 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate. | 07-16-2015 |