Patent application number | Description | Published |
20080255197 | CXCR4 CHEMOKINE RECEPTOR BINDING COMPOUNDS - The present invention relates to compounds that bind to chemokine receptors, and having the formula | 10-16-2008 |
20080287454 | CXCR4 ANTAGONISTS - The present invention is drawn to novel antiviral compounds, pharmaceutical compositions and their use. More specifically this invention is drawn to derivatives of monocyclic polyamines which have activity in standard tests against HIV- or FIV-infected cells as well as other biological activity related to binding of ligands to chemokine receptors that mediate a number of mammalian embryonic developmental processes. | 11-20-2008 |
20090281308 | CHEMOKINE RECEPTOR BINDING HETEROCYCLIC COMPOUNDS WITH ENHANCED EFFICACY - Compounds that interact with the CXCR4 receptor are described. These compounds are useful in treating, for Example, HIV infection and inflammatory conditions such as rheumatoid arthritis, as well as asthma or cancer, and are useful in methods to elevate progenitor and stem cell counts as well as methods to elevate white blood cell counts. | 11-12-2009 |
20100003224 | Combination Therapy - Methods to mobilize progenitor and/or stem cells from the bone marrow to the bloodstream by administering a combination of at least one CXCR4 inhibitor and at least one VLA-4 inhibitor are described. The combinations may also be used to treat multiple myeloma. | 01-07-2010 |
20100035941 | METHODS FOR INCREASING BLOOD FLOW AND/OR PROMOTING TISSUE REGENERATION - Methods for increasing blood flow and/or regenerating tissue using compounds which bind to the chemokine receptor CXCR4 are disclosed. Preferred embodiments of such compounds are of the formula Z-linker-Z′) wherein Z is a cyclic polyamine containing 9-32 ring members of which 2-8 are nitrogen atoms, said nitrogen atoms separated from each other by at least 2 carbon atoms, and wherein said heterocycle may optionally contain additional heteroatoms besides nitrogen and/or may be fused to an additional ring system; or Z is of the formula (I) wherein A comprises a monocyclic or bicyclic fused ring system containing at least one N and B is H or an organic moiety of 1-20 atoms; Z′ may be embodied in a form as defined by Z above, or alternatively may be of the formula —N(R)—(CR | 02-11-2010 |
20100105915 | CHEMOKINE RECEPTOR BINDING HETEROCYCLIC COMPOUNDS - Heterocyclic compounds that bind chemokine receptors and inhibit the binding of their natural ligands are disclosed. The invention compounds are protective against infection by HIV and exert effects characteristic of antagonists to the CXCR4 receptor. | 04-29-2010 |
20100178271 | Combination Therapy - Methods to mobilize progenitor and/or stem cells from the bone marrow to the bloodstream by administering a combination of at least one CXCR | 07-15-2010 |
20110129448 | METHODS TO MOBILIZE PROGENITOR/STEM CELLS - Methods to elevate progenitor and stem cell counts in animal subjects using compounds which bind to the chemokine receptor CXCR4 are disclosed. Preferred embodiments of such compounds are of the formula | 06-02-2011 |
20130095076 | Methods For Increasing Blood Flow And/Or Promoting Tissue Regeneration - Methods for increasing blood flow and/or regenerating tissue using compounds which bind to the chemokine receptor CXCR4 are disclosed. Preferred embodiments of such compounds are of the formula | 04-18-2013 |
20150030561 | Use of CXCR4 Antagonists - Presently disclosed are methods and compositions for treating or preventing WHIM syndrome and certain other disorders or conditions with a certain CXCR4 antagonist. | 01-29-2015 |
20150038509 | Chemokine Receptor Binding Heterocyclic Compounds With Enhanced Efficacy - The invention relates to heterocyclic compounds consisting of a core nitrogen atom surrounded by three pendant groups, wherein two of the three pendant groups are preferably benzimidazolyl methyl and tetrahydroquinolyl, and the third pendant group contains N and optionally contains additional rings. The compounds bind to chemokine receptors, including CXCR4 and CCR5, and demonstrate protective effects against infection of target cells by a human immunodeficiency virus (HIV). | 02-05-2015 |
Patent application number | Description | Published |
20080274621 | III-Nitride semiconductor device with trench structure - A III-nitride trench device has a vertical conduction region with an interrupted conduction channel when the device is not on, providing an enhancement mode device. The trench structure may be used in a vertical conduction or horizontal conduction device. A gate dielectric provides improved performance for the device by being capable of withstanding higher electric field or manipulating the charge in the conduction channel. A passivation of the III-nitride material decouples the dielectric from the device to permit lower dielectric constant materials to be used in high power applications. | 11-06-2008 |
20110143517 | III-Nitride Monolithic IC - III-nitride materials are used to form isolation structures in high voltage ICs to isolate low voltage and high voltage functions on a monolithic power IC. Critical performance parameters are improved using III-nitride materials, due to the improved breakdown performance and thermal performance available in III-nitride semiconductor materials. An isolation structure may include a dielectric layer that is epitaxially grown using a III-nitride material to provide a simplified manufacturing process. The process permits the use of planar manufacturing technology to avoid additional manufacturing costs. High voltage power ICs have improved performance in a smaller package in comparison to corresponding silicon structures. | 06-16-2011 |
20130105814 | Active Area Shaping for III-Nitride Devices | 05-02-2013 |
20130256695 | III-Nitride Heterojunction Device - A III-nitride heterojunction semiconductor device having a III-nitride heterojunction that includes a discontinuous two-dimensional electron gas under a gate thereof. | 10-03-2013 |
20130264579 | III-Nitride Heterojunction Device - A III-nitride heterojunction semiconductor device having a III-nitride heterojunction that includes a discontinuous two-dimensional electron gas under a gate thereof. | 10-10-2013 |
20140034959 | III-Nitride Semiconductor Device with Stepped Gate - A III-nitride heterojunction power semiconductor device that includes a passivation body with a gate well having a top mouth that is wider than the bottom mouth thereof, and a method of fabrication for the same. | 02-06-2014 |
20140106548 | Fabrication of III-Nitride Semiconductor Device and Related Structures - A method of fabricating a III-nitride power semiconductor device that includes growing a transition layer over a substrate using at least two distinct and different growth methods. | 04-17-2014 |
20150037965 | Fabrication of III-Nitride Semiconductor Device and Related Structures - A method of fabricating a III-nitride power semiconductor device that includes growing a transition layer over a substrate using at least two distinct and different growth methods. | 02-05-2015 |