Patent application number | Description | Published |
20110076465 | EPOXY-CONTAINING POLYMER, PHOTO-CURABLE RESIN COMPOSITION, PATTERNING PROCESS, AND ELECTRIC/ELECTRONIC PART PROTECTIVE FILM - A photo-curable resin composition comprising an epoxy-containing silphenylene or silicone polymer with a Mw of 3,000-500,000 forms a coating which is useful as a protective film for electric/electronic parts. | 03-31-2011 |
20110082321 | ALCOHOLIC HYDROXYL-CONTAINING COMPOUNDS AND MAKING METHOD - Bisphenol derivatives having both alcoholic hydroxyl and allyl groups are novel and useful as reagents for modifying organic resins and silicone resins. | 04-07-2011 |
20110143092 | PHOTOCURABLE DRY FILM, METHOD FOR PREPARING SAME, PATTERNING METHOD AND FILM FOR PROTECTING ELECTRIC AND ELECTRONIC PARTS - Disclosed herein is a photocurable dry film including a structure having a photocurable resin layer sandwiched between a support film and a protective film, the photocurable resin layer being formed of a photocurable resin composition including ingredients (A) to (D): | 06-16-2011 |
20120094222 | PHOTOCURABLE RESIN COMPOSITION, DRY FILM THEREOF, PATTERN FORMING METHOD, AND ELECTRICAL/ELECTRONIC PART PROTECTIVE FILM - A photocurable composition includes:
| 04-19-2012 |
20120213993 | ADHESIVE COMPOSITION AND ADHESIVE DRY FILM - An adhesive composition useful in bonding a protective glass with a silicon substrate of a semiconductor device contains (A) an epoxy-containing high-molecular compound and (B) a solvent. The compound (A) has a weight average molecular weight of 3,000 to 500,000 and repeating units represented by the following formula (1): | 08-23-2012 |
Patent application number | Description | Published |
20080241751 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS - A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 μm, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized. | 10-02-2008 |
20080274422 | PREPARATION PROCESS OF CHEMICALLY AMPLIFIED RESIST COMPOSITION - Provided are a preparation method of a resist composition which enables stabilization of a dissolution performance of a resist film obtained from the resist composition thus prepared; and a resist composition obtained by the preparation process and showing small lot-to-lot variations in degradation over time. The process of the present invention is for preparing a chemically amplified resist composition containing a binder, an acid generator, a nitrogenous basic substance and a solvent and it has steps of selecting, as the solvent, a solvent having a peroxide content not greater than an acceptable level, and mixing constituent materials of the resist composition in the selected solvent. | 11-06-2008 |
20090030177 | SYNTHESIS OF PHOTORESIST POLYMER - A polymer for use in photoresist compositions is synthesized by effecting polymerization reaction to form a polymerization product mixture and subjecting the mixture to molecular weight fractionation by a liquid phase separation technique using a good solvent and a poor solvent. The fractionation step is iterated at least twice, and one iteration of fractionation includes adding a good solvent which is different from the good solvent added in the other iteration of fractionation. | 01-29-2009 |
20090214960 | RESIST COMPOSITION AND PATTERNING PROCESS - In a chemically amplified resist composition comprising a base resin, an acid generator, and a solvent, 1400-5000 pbw of the solvent is present per 100 pbw of the resin. The solvent comprises a major proportion of PGMEA, 10-40 wt % of ethyl lactate, a total of PGMEA and ethyl lactate being at least 60 wt %, and 0.2-20 wt % of a high-boiling solvent. | 08-27-2009 |
20100233619 | NOVEL POLYIMIDE SILICONE, PHOTOSENSITIVE RESIN COMPOSITION CONTAINING THE NOVEL POLYIMIDE SILICONE, AND METHOD FOR PATTERN FORMATION - A polyimide silicone having in the molecule a phenolic hydroxy group in which a part or all of hydrogen atoms are substituted with an acid labile group is provided. The polyimide silicone comprises the unit represented by the formula (1): | 09-16-2010 |
20110177464 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS - A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 μm, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized. | 07-21-2011 |
20110294047 | PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS - A photomask blank has a resist film comprising (A) a base resin, (B) an acid generator, and (C) a basic compound. The resist film further comprises (D) a polymer comprising recurring units having a side chain having a fluorinated hydrocarbon group which contains a carbon atom to which a hydroxyl group is bonded and vicinal carbon atoms bonded thereto, the vicinal carbon atoms having in total at least two fluorine atoms bonded thereto. Addition of polymer (D) ensures uniform development throughout the resist film, enabling to form a resist pattern having high CD uniformity. | 12-01-2011 |
Patent application number | Description | Published |
20100009271 | Resist patterning process and manufacturing photo mask - There is disclosed a resist patterning process with a minimum line width of 65 nanometers or less may be formed by using a resist composition containing a polymer, as a base polymer of a chemically-amplified resist composition, composed of a styrene unit whose hydroxyl group is protected by an acid labile group, and an indene unit, and/or an acenaphthalene unit, wherein the polymer has the weight-average molecular weight of 4,000 to 7,000, and in particular, 4,500 to 5,500. One of the currently existing problems to be solved is the line edge roughness. To solve this problem by an acid-generator and a basic compound, there is a problem of the trade-off relationship with a resolution power. There can be provided a resist composition having a high resolution containing a base polymer such as hydroxystyrene that is protected by an acid labile group, a resist patterning process with a pattern rule of 65 nanometers or less having a reduced line edge roughness. | 01-14-2010 |
20100009286 | Chemically-amplified positive resist composition and patterning process thereof - There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank. | 01-14-2010 |
20100167207 | Chemically amplified positive resist composition and resist patterning process - There is disclosed a chemically amplified positive resist composition to form a chemically amplified resist film to be used in a lithography, wherein the chemically amplified positive resist composition comprises at least, (A) a base resin, insoluble or poorly soluble in an alkaline solution, having a repeating unit whose phenolic ydroxyl group is protected by a tertiary alkyl group, while soluble in an alkaline solution when the tertiary alkyl group is removed; (B) an acid generator; (C) a basic component; and (D) an organic solvent, and a solid component concentration is controlled so that the chemically amplified resist film having the film thickness of 10 to 100 nm is obtained by a spin coating method. There can be provided, in a lithography, a chemically amplified positive resist composition giving a high resolution with a suppressed LER deterioration caused by film-thinning at the time of forming a chemically amplified resist film with the film thickness of 10 to 100 nm, and a resist patterning process using the same. | 07-01-2010 |