Patent application number | Description | Published |
20080274407 | Layered carbon electrodes for capacitive deionization and methods of making the same - Layered carbon electrodes for use in, for example, Capacitive Deionization (CDI) of a fluid stream or, for example, an electric double layer capacitor (EDCL). Methods of making the layered carbon electrodes are also described. The layered carbon electrode comprises an electrically conductive porous layer and an adjacent layer comprising carbon particles in contact with the electrically conductive porous layer. A thermoplastic material is infused in the electrically conductive porous layer and provides a bond to the carbon particles at the interface of the electrically conductive porous layer and the adjacent layer comprising carbon particles. | 11-06-2008 |
20080297980 | Layered carbon electrodes useful in electric double layer capacitors and capacitive deionization and methods of making the same - Carbon electrodes for use in, for example, Capacitive Deionization (CDI) of a fluid stream or, for example, an electric double layer capacitor (EDCL). Methods of making the carbon electrodes are also described. The carbon electrode comprises an electrically conductive porous carbon support and a carbon cover layer comprising carbon particles in contact with the electrically conductive porous carbon support. A carbonizable material is within the electrically conductive porous carbon support and provides a bond to the carbon particles at the interface of the electrically conductive porous carbon support and the carbon cover layer. The electrically conductive porous support in some embodiments is a layered structure, where one of the layers is a carbonizable paste layer having electrically conductive particles mixed therein. | 12-04-2008 |
20090297395 | Methods of treating semiconducting materials and treated semiconducting materials - A method for treating semiconducting materials is disclosed. In the disclosed method, a semiconducting material having a crystalline structure is provided, at least a portion of the semiconducting material is exposed to a heat source to create a melt pool, and the semiconducting material is then cooled. Semiconducting materials treated by the method are also disclosed. | 12-03-2009 |
20090305138 | Composite Carbon Electrodes Useful In Electric Double Layer Capacitors And Capacitive Deionization Methods of Making The Same - Composite carbon electrodes for use in, for example, Capacitive Deionization (CDI) of a fluid stream or, for example, an electric double layer capacitor (EDLC) are described. Methods of making the composite carbon electrodes are also described. The composite carbon electrode comprises an electrically conductive porous matrix comprising carbon; and an electric double layer capacitor, comprising an activated carbonized material, dispersed throughout the pore volume of the electrically conductive porous matrix. | 12-10-2009 |
20100190051 | BARRIER LAYER FOR THIN FILM BATTERY - A thin film battery comprises a substrate, anode and cathode current collector layers formed over the substrate, anode and cathode layers formed over and in electrical contact with respective ones of the current collector layers, and an electrolyte layer formed between the anode and cathode layers. The thin film battery further comprises a barrier layer formed from a material such as tin oxide, tin phosphate, tin fluorophosphate, chalcogenide glass, tellurite glass or borate glass. The barrier layer is configured to encapsulate the thin film battery layers and substantially inhibit or prevent exposure of the thin film battery layers to air or moisture. | 07-29-2010 |
20100215899 | Templated Growth of Porous or Non-Porous Castings - A method of forming a templated casting involves incorporating a liquid feedstock into the channels of a honeycomb substrate to form a feedstock-laden substrate, and directionally solidifying the liquid feedstock within the channels. | 08-26-2010 |
20100219549 | METHODS OF MAKING AN UNSUPPORTED ARTICLE OF SEMICONDUCTING MATERIAL BY CONTROLLED UNDERCOOLING - The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as semiconducting material that may be useful in making photovoltaic cells. | 09-02-2010 |
20100285275 | FINGERPRINT-RESISTANT GLASS SUBSTRATES - A glass substrate having at least one surface with engineered properties that include hydrophobicity, oleophobicity, anti-stick or adherence of particulate or liquid matter, resistance to fingerprinting, durability, and transparency (i.e., haze<10%). The surface comprises at least one set of topological features that together have a re-entrant geometry that prevents a decrease in contact angle and pinning of drops comprising at least one of water and sebaceous oils. | 11-11-2010 |
20100291380 | METHODS OF MAKING AN ARTICLE OF SEMICONDUCTING MATERIAL ON A MOLD COMPRISING PARTICLES OF A SEMICONDUCTING MATERIAL - The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells. | 11-18-2010 |
20100301527 | ALIGNED POROUS SUBSTRATES BY DIRECTIONAL MELTING AND RESOLIDIFICATION - A method of forming a templated casting involves incorporating a liquid feedstock into the channels of a honeycomb substrate to form a feedstock-laden substrate, solidifying the liquid feedstock within the channels, and then locally melting and directionally re-solidifying the feedstock. | 12-02-2010 |
20110033643 | METHODS OF MAKING AN UNSUPPORTED ARTICLE OF PURE OR DOPED SEMICONDUCTING MATERIAL - The invention relates to methods of making articles of semiconducting material and semiconducting material articles formed thereby, such as articles of semiconducting material that may be useful in making photovoltaic cells. | 02-10-2011 |
20110101281 | METHOD OF MAKING AN ARTICLE OF SEMICONDUCTING MATERIAL - A method of making an article of a semiconducting material involves withdrawing from a melt of molten semiconducting material a solid mold having already formed on an external surface of the mold a solid layer of the semiconducting material. During the act of withdrawal, one or more of a temperature, a force, and a relative rate of withdrawal are controlled in order to achieve one or more desired attributes in a solid overlayer of semiconductor material that is formed over the solid layer during the withdrawal. | 05-05-2011 |
20110133202 | HIGH THROUGHPUT RECRYSTALLIZATION OF SEMICONDUCTING MATERIALS - Methods for making and/or treating articles of semiconducting material are disclosed. In various methods, a first article of semiconducting material is provided, the first article of semiconducting material is heated sufficiently to melt the semiconducting material, and the melted semiconducting material is solidified in a direction substantially parallel to a shortest dimension of the melted article of semiconducting material. Articles of semiconducting materials made by methods described herein are also disclosed. | 06-09-2011 |
20110135902 | METHOD OF EXOCASTING AN ARTICLE OF SEMICONDUCTING MATERIAL - A method of making an article of a semiconducting material involves selecting a target thickness for the article and then submerging a mold into a molten semiconducting material for a submersion time effective to form a solid layer of semiconducting material over an external surface of the mold where the thickness of the solid layer is substantially equal to the target thickness. The submersion time is selected to be substantially equal to a transition time, which is determined from a plot of solid layer thickness versus submersion time for a mold having particular attributes, including mold composition, mold thickness and initial mold temperature. The transition time, and thus the submersion time, corresponds to a maximum in solid layer thickness in the solid layer thickness versus submersion time curve for the particular mold. | 06-09-2011 |
20110163273 | COMPOSITE CARBON ELECTRODES USEFUL IN ELECTRIC DOUBLE LAYER CAPACITORS AND CAPACITIVE DEIONIZATION AND METHODS OF MAKING THE SAME - Composite carbon electrodes for use in, for example, Capacitive Deionization (CDI) of a fluid stream or, for example, an electric double layer capacitor (EDLC) are described. Methods of making the composite carbon electrodes are also described. The composite carbon electrode comprises an electrically conductive porous matrix comprising carbon; and an electric double layer capacitor, comprising an activated carbonized material, dispersed throughout the pore volume of the electrically conductive porous matrix. | 07-07-2011 |
20110206903 | OLEOPHOBIC GLASS SUBSTRATES - A glass substrate having an oleophobic surface. The surface is substantially free of features that form a reentrant geometry and includes a plurality of gas-trapping features extending from the surface to a depth below the surface and a coating comprising at least one of a fluoropolymer and a fluorosilane. The gas-trapping features are substantially isolated from each other, and trap gas below droplets to prevent wetting of the surface. | 08-25-2011 |
20110287217 | SUPEROLEOPHOBIC SUBSTRATES AND METHODS OF FORMING SAME - Superoleophobic substrates and methods of forming same are disclosed. The methods include providing a laser-ablatable substrate comprising glass and directing a laser beam to the substrate surface and laser-ablating at least a portion thereof to form an array of spaced-apart micropillars having sidewalls. The laser beam is provided with sufficient energy to form on the sidewalls an irregular rough surface with re-entrant microscale and nanoscale features that render the substrate surface superoleophobic when coated with a low-surface-energy coating. | 11-24-2011 |
20110305598 | MICROFLUIDIC DEVICE - A microfluidic device is described herein which comprises a micron-sized deep flow channel and a sensor. The micron-sized deep flow channel is configured such that a sample solution and a reference solution flow side-by-side to one another in a single sensing region of the sensor. The single sensing region is divided into a detection region and a reference region which are contiguous to one another and which are respectively interfaced with the sample solution and the reference solution that flow side-by-side to one another in a longitudinal direction within the micron-sized deep flow channel. | 12-15-2011 |
20120027996 | MOLD SHAPE TO OPTIMIZE THICKNESS UNIFORMITY OF SILICON FILM - A method of making a solid layer of a semiconducting material involves selecting a mold having a leading edge thickness and a different trailing edge thickness such that in respective plots of solid layer thickness versus effective submersion time for submersion of the leading and trailing edges into molten semiconducting material, a thickness of the solid layer adjacent to the leading and trailing edges are substantially equal. The mold is submersed into and withdrawn from the molten semiconducting material to form a solid layer of semiconducting material over an external surface of the mold. | 02-02-2012 |
20120074528 | TECHNIQUE TO MODIFY THE MICROSTRUCTURE OF SEMICONDUCTING MATERIALS - A method of treating a sheet of semiconducting material comprises forming a sinterable first layer over each major surface of a sheet of semiconducting material, forming a second layer over each of the first layers to form a particle-coated semiconductor sheet, placing the particle-coated sheet between end members, heating the particle-coated sheet to a temperature effective to at least partially sinter the first layer and at least partially melt the semiconducting material, and cooling the particle-coated sheet to solidify the semiconducting material and form a treated sheet of semiconducting material. | 03-29-2012 |
20120107558 | TRANSPARENT SUBSTRATE HAVING DURABLE HYDROPHOBIC/OLEOPHOBIC SURFACE - A substrate having a durable hydrophobic and/or oleophobic surface. The durable hydrophobic and/or oleophobic surface includes a first layer that is disposed on the substrate and comprises inorganic nanoparticles, an outer layer comprising a fluorosilane, and an optional immobilizing layer that comprises at least one of an inorganic oxide and a silsesquioxane. The durable surface is capable of retaining optical properties, such as haze, and hydrophobic and/or oleophobic properties after repeated contact with foreign objects such as, for example, wiping with a cloth or human finger. | 05-03-2012 |
20120196088 | ARTICLE AND METHOD FOR FORMING LARGE GRAIN POLYCRYSTALLINE SILICON FILMS - A templated mold comprises a mold body formed from a mold material. The mold body has at least one major surface with a patterned layer formed from a patterning material disposed over the major surface. The patterned layer defines a high nucleation energy barrier surface and a plurality of nucleation surfaces, such that a contact angle of a molten semiconducting material with the nucleation surfaces is less than a contact angle of the molten semiconducting material with the high nucleation energy barrier surface, and the nucleation surfaces are formed from either the mold material or the patterning material. | 08-02-2012 |
20120299218 | COMPOSITE ACTIVE MOLDS AND METHODS OF MAKING ARTICLES OF SEMICONDUCTING MATERIAL - The disclosure relates to a substrate mold comprising a shell material having an external surface configured to engage with molten semiconducting material, and an internal surface configured as a thermal transfer surface to transfer heat therethrough, and a core defined within the shell material and configured to remove heat from the shell material through the thermal transfer surface of the shell material. The substrate mold is configured to be immersed into the molten semiconducting material, and the external surface of the shell material is configured to have solidified molten semiconducting material formed thereon. | 11-29-2012 |
20130011604 | TEMPLATED GROWTH OF POROUS OR NON-POROUS CASTINGS - A method of forming a templated casting involves incorporating a liquid feedstock into the channels of a honeycomb substrate to form a feedstock-laden substrate, and directionally solidifying the liquid feedstock within the channels. | 01-10-2013 |
20130136894 | METAL DEWETTING METHODS AND ARTICLES PRODUCED THEREBY - Described herein are improved dewetting methods and improved patterned articles produced using such methods. The improved methods and articles generally implement continuous ultra-thin metal-containing films or film stacks as the materials to be dewetted. For example, a method can involve the steps of providing a substrate that has a continuous ultra-thin metal-containing film or film stack disposed on a surface thereof, and dewetting at least a portion of the continuous ultra-thin metal-containing film or film stack to produce a plurality of discrete metal-containing dewetted islands on the surface of the substrate. | 05-30-2013 |
20130149496 | FINGERPRINT-RESISTANT ARTICLES AND METHODS FOR MAKING AND USING SAME - Described herein are various methods for making textured articles, textured articles that have improved fingerprint resistance, and methods of using the textured articles. The textured articles generally include a substrate and at least two different sets of nanostructured topographical features that are created in or on a surface of the substrate. Each set of nanostructured topographical features will have at least one average dimensional attribute that is different from that of any other set of nanostructured topographical features. | 06-13-2013 |
20130157007 | TEXTURED SURFACES AND METHODS OF MAKING AND USING SAME - Described herein are various methods for making textured articles, textured articles that have improved fingerprint resistance, and methods of using the textured articles. The methods generally make use of masks comprising nanostructured metal-containing features to produce textured surfaces that also comprise nanostructured features. These nanostructured features in the textured surfaces can render the surfaces hydrophobic and oleophobic, thereby beneficially providing the articles with improved fingerprint resistance relative to similar or identical articles that lack the texturing. | 06-20-2013 |
20130300025 | METHODS OF TREATING A MOLD AND FORMING A SOLID LAYER OF A SEMICONDUCTING MATERIAL THEREON - A method of forming a solid layer of a semiconducting material on an external surface of a treated mold which extends between a leading edge and a trailing edge comprises selectively modifying a temperature gradient of a mold such that a temperature of the leading edge (T | 11-14-2013 |
20130323466 | OLEOPHOBIC GLASS ARTICLES AND METHODS FOR MAKING AND USING SAME - Described herein are glass substrates having oleophobic surfaces that are substantially free of features that form a reentrant geometry. The surfaces can include a plurality of gas-trapping features, extending from the surface to a depth below the surface, that are substantially isolated from each other. The gas-trapping features are capable of trapping gas below any droplets that are contacted with the surface so as to prevent wetting of the surface by the droplets. | 12-05-2013 |
20140097432 | SHEET OF SEMICONDUCTING MATERIAL, LAMINATE, AND SYSTEM AND METHODS FOR FORMING SAME - Methods of forming a laminate comprising a sheet of semiconductor material utilize a system. The system comprises a fibrous sheet, a guide member for guiding the fibrous sheet, and a melt of a semiconductor material. The sheet of semiconductor material and a laminate comprising the fibrous sheet and the sheet of semiconductor material are also included. | 04-10-2014 |
20140099232 | SHEET OF SEMICONDUCTING MATERIAL, SYSTEM FOR FORMING SAME, AND METHOD OF FORMING SAME - A method of forming a sheet of semiconductor material utilizes a system. The system comprises a first convex member extending along a first axis and capable of rotating about the first axis and a second convex member spaced from the first convex member and extending along a second axis and capable of rotating about the second axis. The first and second convex members define a nip gap therebetween. The method comprises applying a melt of the semiconductor material on an external surface of at least one of the first and second convex members to form a deposit on the external surface of at least one of the first and second convex members. The method further comprises rotating the first and second convex members in a direction opposite one another to allow for the deposit to pass through the nip gap, thereby forming the sheet of semiconductor material. | 04-10-2014 |
20140106141 | LAMINATE ARTICLES WITH MODERATE ADHESION AND RETAINED STRENGTH - One or more aspects of the disclosure pertain to an article including a film disposed on a glass substrate, which may be strengthened, where the interface between the film and the glass substrate is modified, such that the article has an improved average flexural strength, and the film retains key functional properties for its application. Some key functional properties of the film include optical, electrical and/or mechanical properties. In one or more embodiments, interface exhibits the effective adhesion energy is about less than about 4 J/m | 04-17-2014 |
20140165654 | BULK ANNEALING OF GLASS SHEETS - Surface modification layers and associated heat treatments, that may be provided on a sheet, a carrier, or both, to control both room-temperature van der Waals (and/or hydrogen) bonding and high temperature covalent bonding between the thin sheet and carrier. The room-temperature bonding is controlled so as to be sufficient to hold the thin sheet and carrier together during vacuum processing, wet processing, and/or ultrasonic cleaning processing, for example. And at the same time, the high temperature covalent bonding is controlled so as to prevent a permanent bond between the thin sheet and carrier during high temperature processing, as well as maintain a sufficient bond to prevent delamination during high temperature processing. | 06-19-2014 |
20140166199 | METHODS FOR PROCESSING OLED DEVICES - Methods for making electronic devices on thin sheets bonded to carriers. A surface modification layer and associated heat treatments, may be provided on a sheet, a carrier, or both, to control both room-temperature van der Waals (and/or hydrogen) bonding and high temperature covalent bonding between the thin sheet and carrier during the electronic device processing. The room-temperature bonding is controlled so as to be sufficient to hold the thin sheet and carrier together during vacuum processing, wet processing, and/or ultrasonic cleaning processing, during the electronic device processing. And at the same time, the high temperature covalent bonding is controlled so as to prevent a permanent bond between the thin sheet and carrier during high temperature processing, during the electronic device processing, as well as maintain a sufficient bond to prevent delamination during high temperature processing. | 06-19-2014 |
20140170378 | GLASS ARTICLES AND METHODS FOR CONTROLLED BONDING OF GLASS SHEETS WITH CARRIERS - Surface modification layers and associated heat treatments, that may be provided on a sheet, a carrier, or both, to control both room-temperature van der Waals (and/or hydrogen) bonding and high temperature covalent bonding between the thin sheet and carrier. The room-temperature bonding is controlled so as to be sufficient to hold the thin sheet and carrier together during vacuum processing, wet processing, and/or ultrasonic cleaning processing, for example. And at the same time, the high temperature covalent bonding is controlled so as to prevent a permanent bond between the thin sheet and carrier during high temperature processing, as well as maintain a sufficient bond to prevent delamination during high temperature processing. | 06-19-2014 |
20140220327 | Glass Articles Having Films with Moderate Adhesion and Retained Strength - One or more aspects of the disclosure pertain to an article including a film disposed on a glass substrate, which may be strengthened, where the interface between the film and the glass substrate is modified, such that the article has an improved average flexural strength, and the film retains key functional properties for its application. Some key functional properties of the film include optical, electrical and/or mechanical properties. In one or more embodiments, the interface exhibits an effective adhesion energy of about less than about 4 J/m | 08-07-2014 |