Patent application number | Description | Published |
20140029616 | DYNAMIC NODE CONFIGURATION IN DIRECTORY-BASED SYMMETRIC MULTIPROCESSING SYSTEMS - Systems and methods that allow for dynamically deconfiguring, reconfiguring and/or otherwise configuring nodes (e.g., processors) in a symmetric multiprocessing system (e.g., a symmetric multiprocessor) in a manner that avoids, or at least limits, inefficiencies such as renumbering of node IDs, system reboots, SW configuration handle changes, and the like. In one arrangement, a number of modules, tables and/or the like that are configured to generate node IDs and/or convert node IDs from one form to another form can be intelligently implemented within an SMP to allow the various processes and/or components of an SMP to utilize the node IDs in a more efficient manner. For instance, as SDs in an SMP are often configured to work with CNIDs (e.g., for use in determining at which node a particular requested cache line resides), any node GNIDs that are sent to the SD for processing can first be converted into corresponding CNIDs. | 01-30-2014 |
20140040526 | COHERENT DATA FORWARDING WHEN LINK CONGESTION OCCURS IN A MULTI-NODE COHERENT SYSTEM - Systems and methods for efficient data transport across multiple processors when link utilization is congested. In a multi-node system, each of the nodes measures a congestion level for each of the one or more links connected to it. A source node indicates when each of one or more links to a destination node is congested or each non-congested link is unable to send a particular packet type. In response, the source node sets an indication that it is a candidate for seeking a data forwarding path to send a packet of the particular packet type to the destination node. The source node uses measured congestion levels received from other nodes to search for one or more intermediate nodes. An intermediate node in a data forwarding path has non-congested links for data transport. The source node reroutes data to the destination node through the data forwarding path. | 02-06-2014 |
20140056370 | DYNAMIC SKEW CORRECTION IN A MULTI-LANE COMMUNICATION LINK - A mechanism for dynamic skew correction in a multi-lane communication link includes a receiver unit including, for each of the lanes, a first-in first-out (FIFO). The FIFO may store received symbols to locations pointed to by a write pointer and output to downstream logic, symbols stored at locations pointed to by a read pointer. The receiver may also include a symbol drop unit that disables the write pointer in response to receiving a start alignment symbol, and enables the write pointer in response to receiving an end alignment symbol. The receiver also includes an alignment unit that disables the read pointer in response to detecting that the end symbol has been received at least one lane but not all lanes. In addition, the alignment unit may enable the read pointer in response to a determination that the end symbol has been received on all lanes. | 02-27-2014 |
Patent application number | Description | Published |
20090061631 | GATE REPLACEMENT WITH TOP OXIDE REGROWTH FOR THE TOP OXIDE IMPROVEMENT - Methods of replacing/reforming a top oxide around a charge storage element of a memory cell and methods of improving quality of a top oxide around a charge storage element of a memory cell are provided. The method can involve removing a first poly over a first top oxide from the memory cell; removing the first top oxide from the memory cell; and forming a second top oxide around the charge storage element. The second top oxide can be formed by oxidizing a portion of the charge storage element or by forming a sacrificial layer over the charge storage element and oxidizing the sacrificial layer to a second top oxide. | 03-05-2009 |
20100283100 | SEMICONDUCTOR MEMORY COMPRISING DUAL CHARGE STORAGE NODES AND METHODS FOR ITS FABRICATION - A dual charge storage node memory device and methods for its fabrication are provided. In one embodiment a dielectric plug is formed comprising a first portion recessed into a semiconductor substrate and a second portion extending above the substrate. A layer of semiconductor material is formed overlying the second portion. A first layered structure is formed overlying a first side of the second portion of the dielectric plug, and a second layered structure is formed overlying a second side, each of the layered structures overlying the layer of semiconductor material and comprising a charge storage layer between first and second dielectric layers. Ions are implanted into the substrate to form a first bit line and second bit line, and a layer of conductive material is deposited and patterned to form a control gate overlying the dielectric plug and the first and second layered structures. | 11-11-2010 |
20110175158 | DUAL CHARGE STORAGE NODE MEMORY DEVICE AND METHODS FOR FABRICATING SUCH DEVICE - A dual node memory device and methods for fabricating the device are provided. In one embodiment the method comprises forming a layered structure with an insulator layer, a charge storage layer, a buffer layer, and a sacrificial layer on a semiconductor substrate. The layers are patterned to form two spaced apart stacks and an exposed substrate portion between the stacks. A gate insulator and a gate electrode are formed on the exposed substrate, and the sacrificial layer and buffer layer are removed. An additional insulator layer is deposited overlying the charge storage layer to form insulator-storage layer-insulator memory storage areas on each side of the gate electrode. Sidewall spacers are formed at the sidewalls of the gate electrode overlying the storage areas. Bit lines are formed in the substrate spaced apart from the gate electrode, and a word line is formed that contacts the gate electrode and the sidewall spacers. | 07-21-2011 |
20140024190 | DUAL STORAGE NODE MEMORY - An embodiment of the present invention is directed to a memory cell. The memory cell includes a first charge storage element and a second charge storage element, wherein the first and second charge storage elements include nitrides. The memory cell further includes an insulating layer formed between the first and second charge storage elements. The insulating layer provides insulation between the first and second charge storage elements. | 01-23-2014 |
Patent application number | Description | Published |
20090189201 | INWARD DIELECTRIC SPACERS FOR REPLACEMENT GATE INTEGRATION SCHEME - Inward dielectric spacers for a replacement gate integration scheme are described. A semiconductor device is fabricated by first providing a substrate having thereon a placeholder gate electrode disposed in a dielectric layer. The placeholder gate electrode is removed to from a trench in the dielectric layer. A pair of dielectric spacers is then formed adjacent to the sidewalls of the trench. Finally, a gate electrode is formed in the trench and adjacent to the pair of dielectric layers. | 07-30-2009 |
20090311635 | DOUBLE EXPOSURE PATTERNING WITH CARBONACEOUS HARDMASK - Methods to pattern features in a substrate layer by exposing a photoresist layer more than once. In one embodiment, a single reticle may be exposed more than once with an overlay offset implemented between successive exposures to reduce the half pitch of the reticle. In particular embodiments, these methods may be employed to reduce the half pitch of the features printed with 65 nm generation lithography equipment to achieve 45 nm lithography generation CD and pitch performance. | 12-17-2009 |
20130320542 | Method of fabricating a self-aligned buried bit line for a vertical channel dram - A method of fabricating a self-aligned buried bit line in a structure which makes up a portion of a vertical channel DRAM. The materials and processes used enable self-alignment of elements of the buried bit line during the fabrication process. In addition, the materials and processes used enable for formation of individual DRAM cells which have a buried bit line width which is 16 nm or less. | 12-05-2013 |
20130323920 | Method of fabricating a gate-all-around word line for a vertical channel dram - A method of fabricating a self-aligned buried wordline in a structure which contains a self-aligned buried bit line, where the overall structure which makes up a portion of a vertical channel DRAM. The materials and processes used enable self-alignment of elements of the buried wordline during the fabrication process. In addition, the materials and processes used enable for formation of individual DRAM cells which have a buried bit line width which is 16 nm or less and a perpendicular buried wordline width which is 24 nm or less. | 12-05-2013 |
20140231914 | FIN FIELD EFFECT TRANSISTOR FABRICATED WITH HOLLOW REPLACEMENT CHANNEL - A method for forming a FinFET comprises forming a raised fin between isolation trenches on a substrate. A plurality of sacrificial features is formed on at least a portion of the raised fin, the sacrificial features including a sacrificial gate dielectric and a sacrificial gate electrode having sidewalls. The sacrificial features on the raised fin are removed to form a hollow channel. Channel material is selectively and epitaxially grown in the hollow channel to form a channel. | 08-21-2014 |
Patent application number | Description | Published |
20090043527 | COMPUTER-IMPLEMENTED METHODS, CARRIER MEDIA, AND SYSTEMS FOR GENERATING A METROLOGY SAMPLING PLAN - Various computer-implemented methods, carrier media, and systems for generating a metrology sampling plan are provided. One computer-implemented method for generating a metrology sampling plan includes identifying one or more individual defects that have one or more attributes that are abnormal from one or more attributes of a population of defects in which the individual defects are included. The population of defects is located in a predetermined pattern on a wafer. The method also includes generating the metrology sampling plan based on results of the identifying step such that one or more areas on the wafer in which the one or more identified individual defects are located are sampled during metrology. | 02-12-2009 |
20090257645 | METHODS AND SYSTEMS FOR DETERMINING A DEFECT CRITICALITY INDEX FOR DEFECTS ON WAFERS - Various methods and systems for determining a defect criticality index (DCI) for defects on wafers are provided. One computer-implemented method includes determining critical area information for a portion of a design for a wafer surrounding a defect detected on the wafer by an inspection system based on a location of the defect reported by the inspection system and a size of the defect reported by the inspection system. The method also includes determining a DCI for the defect based on the critical area information, a location of the defect with respect to the critical area information, and the reported size of the defect. | 10-15-2009 |
20090297019 | METHODS AND SYSTEMS FOR UTILIZING DESIGN DATA IN COMBINATION WITH INSPECTION DATA - Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium. | 12-03-2009 |
20110170091 | INSPECTION GUIDED OVERLAY METROLOGY - Inspection guided overlay metrology may include performing a pattern search in order to identify a predetermined pattern on a semiconductor wafer, generating a care area for all instances of the predetermined pattern on the semiconductor wafer, identifying defects within generated care areas by performing an inspection scan of each of the generated care areas, wherein the inspection scan includes a low-threshold or a high sensitivity inspection scan, identifying overlay sites of the predetermined pattern of the semiconductor wafer having a measured overlay error larger than a selected overlay specification utilizing a defect inspection technique, comparing location data of the identified defects of a generated care area to location data of the identified overlay sites within the generated care area in order to identify one or more locations wherein the defects are proximate to the identified overlay sites, and generating a metrology sampling plan based on the identified locations. | 07-14-2011 |
20110172804 | Scanner Performance Comparison And Matching Using Design And Defect Data - A system and method of matching multiple scanners using design and defect data are described. A golden wafer is processed using a golden tool. A second wafer is processed using a second tool. Both tools provide focus/exposure modulation. Wafer-level spatial signatures of critical structures for both wafers can be compared to evaluate the behavior of the scanners. Critical structures can be identified by binning defects on the golden wafer having similar patterns. In one embodiment, the signatures must match within a certain percentage or the second tool is characterized as a “no match”. Reticles can be compared in a similar manner, wherein the golden and second wafers are processed using a golden reticle and a second reticle, respectively. | 07-14-2011 |
20110187848 | COMPUTER-IMPLEMENTED METHODS, COMPUTER-READABLE MEDIA, AND SYSTEMS FOR CLASSIFYING DEFECTS DETECTED IN A MEMORY DEVICE AREA ON A WAFER - Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer are provided. | 08-04-2011 |
20120141013 | REGION BASED VIRTUAL FOURIER FILTER - The present invention includes searching imagery data in order to identify one or more patterned regions on a semiconductor wafer, generating one or more virtual Fourier filter (VFF) working areas, acquiring an initial set of imagery data from the VFF working areas, defining VFF training blocks within the identified patterned regions of the VFF working areas utilizing the initial set of imagery data, wherein each VFF training block is defined to encompass a portion of the identified patterned region displaying a selected repeating pattern, calculating an initial spectrum for each VFF training block utilizing the initial set of imagery data from the VFF training blocks, and generating a VFF for each training block by identifying frequencies of the initial spectrum having maxima in the frequency domain, wherein the VFF is configured to null the magnitude of the initial spectrum at the frequencies identified to display spectral maxima. | 06-07-2012 |
20120316855 | Using Three-Dimensional Representations for Defect-Related Applications - Various embodiments for using three-dimensional representations for defect-related applications are provided. | 12-13-2012 |
20130064442 | Determining Design Coordinates for Wafer Defects - Methods and systems for determining design coordinates for defects detected on a wafer are provided. One method includes aligning a design for a wafer to defect review tool images for defects detected in multiple swaths on the wafer by an inspection tool, determining a position of each of the defects in design coordinates based on results of the aligning, separately determining a defect position offset for each of the multiple swaths based on the swath in which each of the defects was detected (swath correction factor), the design coordinates for each of the defects, and a position for each of the defects determined by the inspection tool, and determining design coordinates for the other defects detected in the multiple swaths by the inspection tool by applying the appropriate swath correction factor to those defects. | 03-14-2013 |
20130318485 | Design Alteration for Wafer Inspection - Methods and systems for binning defects on a wafer are provided. One method includes identifying areas in a design for a layer of a device being fabricated on a wafer that are not critical to yield of fabrication of the device and generating an altered design for the layer by eliminating features in the identified areas from the design for the layer. The method also includes binning defects detected on the layer into groups using the altered design such that features in the altered design proximate positions of the defects in each of the groups are at least similar. | 11-28-2013 |
20140037187 | Inspecting a Wafer and/or Predicting One or More Characteristics of a Device Being Formed on a Wafer - Methods for inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer are provided. One method includes acquiring images for multiple die printed on a wafer, each of which is printed by performing a double patterning lithography process on the wafer and which include two or more die printed at nominal values of overlay for the double patterning lithography process and one or more die printed at modulated values of the overlay; comparing the images acquired for the multiple die printed at the nominal values to the images acquired for the multiple die printed at the modulated values; and detecting defects in the multiple die printed at the modulated values based on results of the comparing step. | 02-06-2014 |
20140153814 | Method and System for Mixed Mode Wafer Inspection - Mixed-mode includes receiving inspection results including one or more images of a selected region of the wafer, the one or more images include one or more wafer die including a set of repeating blocks, the set of repeating blocks a set of repeating cells. In addition, mixed-mode inspection includes adjusting a pixel size of the one or more images to map each cell, block and die to an integer number of pixels. Further, mixed-mode inspection includes comparing a first wafer die to a second wafer die to identify an occurrence of one or more defects in the first or second wafer die, comparing a first block to a second block to identify an occurrence of one or more defects in the first or second blocks and comparing a first cell to a second cell to identify an occurrence of one or more defects in the first or second cells. | 06-05-2014 |
20140199791 | Method and System for Universal Target Based Inspection and Metrology - Universal target based inspection drive metrology includes designing a plurality of universal metrology targets measurable with an inspection tool and measurable with a metrology tool, identifying a plurality of inspectable features within at least one die of a wafer using design data, disposing the plurality of universal targets within the at least one die of the wafer, each universal target being disposed at least proximate to one of the identified inspectable features, inspecting a region containing one or more of the universal targets with an inspection tool, identifying one or more anomalistic universal targets in the inspected region with an inspection tool and, responsive to the identification of one or more anomalistic universal targets in the inspected region, performing one or more metrology processes on the one or more anomalistic universal metrology targets with the metrology tool. | 07-17-2014 |
20150120220 | Detecting IC Reliability Defects - Methods and systems for detecting reliability defects on a wafer are provided. One method includes acquiring output for a wafer generated by an inspection system. The method also includes determining one or more geometric characteristics of one or more patterned features formed on the wafer based on the output. In addition, the method includes identifying which of the one or more patterned features will cause one or more reliability defects in a device being formed on the wafer based on the determined one or more characteristics. | 04-30-2015 |
20150124247 | Metrology Optimized Inspection - Methods and systems for determining one or more parameters of a wafer inspection process are provided. One method includes acquiring metrology data for a wafer generated by a wafer metrology system. The method also includes determining one or more parameters of a wafer inspection process for the wafer or another wafer based on the metrology data. | 05-07-2015 |
20150154746 | Methods and Systems for Utilizing Design Data in Combination with Inspection Data - Various methods and systems for utilizing design data in combination with inspection data are provided. One computer-implemented method for binning defects detected on a wafer includes comparing portions of design data proximate positions of the defects in design data space. The method also includes determining if the design data in the portions is at least similar based on results of the comparing step. In addition, the method includes binning the defects in groups such that the portions of the design data proximate the positions of the defects in each of the groups are at least similar. The method further includes storing results of the binning step in a storage medium. | 06-04-2015 |
20150178914 | Methods and Systems for Inspection of Wafers and Reticles Using Designer Intent Data - Methods and systems for inspection of wafers and reticles using designer intent data are provided. One computer-implemented method includes identifying nuisance defects on a wafer based on inspection data produced by inspection of a reticle, which is used to form a pattern on the wafer prior to inspection of the wafer. Another computer-implemented method includes detecting defects on a wafer by analyzing data generated by inspection of the wafer in combination with data representative of a reticle, which includes designations identifying different types of portions of the reticle. An additional computer-implemented method includes determining a property of a manufacturing process used to process a wafer based on defects that alter a characteristic of a device formed on the wafer. Further computer-implemented methods include altering or simulating one or more characteristics of a design of an integrated circuit based on data generated by inspection of a wafer. | 06-25-2015 |
Patent application number | Description | Published |
20110049618 | FABRICATION OF TRENCH DMOS DEVICE HAVING THICK BOTTOM SHIELDING OXIDE - Semiconductor device fabrication method and devices are disclosed. A device may be fabricated by forming in a semiconductor layer; filling the trench with an insulating material; removing selected portions of the insulating material leaving a portion of the insulating material in a bottom portion of the trench; forming one or more spacers on one or more sidewalls of a remaining portion of the trench; anisotropically etching the insulating material in the bottom portion of the trench using the spacers as a mask to form a trench in the insulator; removing the spacers; and filling the trench in the insulator with a conductive material. Alternatively, an oxide-nitride-oxide (ONO) structure may be formed on a sidewall and at a bottom of the trench and one or more conductive structures may be formed in a portion of the trench not occupied by the ONO structure. | 03-03-2011 |
20110095361 | MULTIPLE LAYER BARRIER METAL FOR DEVICE COMPONENT FORMED IN CONTACT TRENCH - A semiconductor device formed on a semiconductor substrate may include a component formed in a contact trench located in an active cell region. The component may comprise a barrier metal deposited on a bottom and portions of sidewalls of the contact trench and a tungsten plug deposited in a remaining portion of the contact trench. The barrier metal may comprise first and second metal layers. The first metal layer may be proximate to the sidewall and the bottom of the contact trench. The first metal layer may include a nitride. The second metal layer may be between the first metal layer and the tungsten plug and between the tungsten plug and the sidewall. The second metal layer covers portions of the sidewalls of not covered by the first metal layer. | 04-28-2011 |
20120129328 | MULTIPLE LAYER BARRIER METAL FOR DEVICE COMPONENT FORMED IN CONTACT TRENCH - A semiconductor device formed on a semiconductor substrate may include a component formed in a contact trench located in an active cell region. The component may comprise a barrier metal deposited on a bottom and portions of sidewalls of the contact trench and a tungsten plug deposited in a remaining portion of the contact trench. The barrier metal may comprise first and second metal layers. The first metal layer may be proximate to the sidewall and the bottom of the contact trench. The first metal layer may include a nitride. The second metal layer may be between the first metal layer and the tungsten plug and between the tungsten plug and the sidewall. The second metal layer covers portions of the sidewalls of not covered by the first metal layer. | 05-24-2012 |
20120187472 | TRENCH POLY ESD FORMATION FOR TRENCH MOS AND SGT - A semiconductor device and its method of fabrication are described. A trench formed in a semiconductor substrate is partially filling said trench with a semiconductor material that lines a bottom and sides of the trench, leaving a gap in a middle of the trench running lengthwise along the trench. A first portion of the semiconductor material located below the gap is doped with dopants of a first conductivity type. The gap is filled with a dielectric material. Second portions of the semiconductor material located on the sides of the trench on both sides of the dielectric material are doped with dopants of a second conductivity type. The doping forms a P—N—P or N—P—N structure running lengthwise along the trench with differently doped regions located side by side across a width of the trench. | 07-26-2012 |
20120280307 | INTEGRATING SCHOTTKY DIODE INTO POWER MOSFET - A semiconductor device includes a plurality of trenches including active gate trenches in an active area and gate runner/termination trenches and shield electrode pickup trenches in a termination area outside the active area. The gate runner/termination trenches include one or more trenches that define a mesa located outside an active area. A first conductive region is formed in the plurality of trenches. An intermediate dielectric region and termination protection region are formed in the trenches that define the mesa. A second conductive region is formed in the portion of the trenches that define the mesa. The second conductive region is electrically isolated from the first conductive region by the intermediate dielectric region. A first electrical contact is made to the second conductive regions and a second electrical contact to the first conductive region in the shield electrode pickup trenches. One or more Schottky diodes are formed within the mesa. | 11-08-2012 |
20130075808 | Trench MOSFET with Integrated Schottky Barrier Diode - A Schottky diode includes a semiconductor layer formed on a semiconductor substrate; first and second trenches formed in the semiconductor layer where the first and second trenches are lined with a thin dielectric layer and being filled partially with a trench conductor layer and remaining portions of the first and second trenches are filled with a first dielectric layer; and a Schottky metal layer formed on a top surface of the semiconductor layer between the first trench and the second trench. The Schottky diode is formed with the Schottky metal layer as the anode and the semiconductor layer between the first and second trenches as the cathode. The trench conductor layer in each of the first and second trenches is electrically connected to the anode of the Schottky diode. In one embodiment, the Schottky diode is formed integrated with a trench field effect transistor on the same semiconductor substrate. | 03-28-2013 |
20130228860 | SHIELDED GATE TRENCH MOS WITH IMPROVED SOURCE PICKUP LAYOUT - A method for fabricating a semiconductor device includes forming a plurality of trenches using a first mask. The trenches include source pickup trenches located in outside a termination area and between two adjacent active areas. First and second conductive regions separated by an intermediate dielectric region are formed using a second mask. A first electrical contact to the first conductive region and a second electrical contact to the second conductive region are formed using a third mask and forming a source metal region. Contacts to a gate metal region are formed using a fourth mask. A semiconductor device includes a source pickup contact located outside a termination region and outside an active region of the device. | 09-05-2013 |
20130299872 | TRENCH POLY ESD FORMATION FOR TRENCH MOS AND SGT - A semiconductor device includes a semiconductor material disposed in a trench with polysilicon lining at least the bottom of the trench. The semiconductor material includes differently doped regions configured as a PNP or NPN structure formed in the trench with differently doped regions located side by side across a width of the trench. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. | 11-14-2013 |
20130309823 | INTEGRATING SCHOTTKY DIODE INTO POWER MOSFET - A semiconductor device includes a plurality of trenches including active gate trenches in an active area and gate runner/termination trenches and shield electrode pickup trenches in a termination area outside the active area. The gate runner/termination trenches include one or more trenches that define a mesa located outside an active area. A first conductive region is formed in the plurality of trenches. An intermediate dielectric region and termination protection region are formed in the trenches that define the mesa. A second conductive region is formed in the portion of the trenches that define the mesa. The second conductive region is electrically isolated from the first conductive region by the intermediate dielectric region. A first electrical contact is made to the second conductive regions and a second electrical contact to the first conductive region in the shield electrode pickup trenches. One or more Schottky diodes are formed within the mesa. | 11-21-2013 |
20140175536 | HIGH DENSITY TRENCH-BASED POWER MOSFETS WITH SELF-ALIGNED ACTIVE CONTACTS AND METHOD FOR MAKING SUCH DEVICES - Aspects of the present disclosure describe a high density trench-based power MOSFET with self-aligned source contacts. The source contacts are self-aligned with a first insulative spacer and a second insulative spacer, wherein the first spacer is resistant to an etching process that will selectively remove the material the second spacer is made from. Additionally, the active devices may have a two-step gate oxide, wherein a lower portion of the gate oxide has a thickness T | 06-26-2014 |
20140239388 | TERMINATION TRENCH FOR POWER MOSFET APPLICATIONS - Aspects of the present disclosure describe a termination structure for a power MOSFET device. A termination trench may be formed into a semiconductor material and may encircle an active area of the MOSFET. The termination trench may comprise a first and second portion of conductive material. The first and second portions of conductive material are electrically isolated from each other. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. | 08-28-2014 |
20140252460 | High Density MOSFET Array with Self-Aligned Contacts Delimited by Nitride-Capped Trench Gate Stacks and Method - A high density trench-gated MOSFET array and method are disclosed. It comprises semiconductor substrate partitioned into MOSFET array area and gate pickup area; epitaxial region, body region and source region; numerous precisely spaced active nitride-capped trench gate stacks (ANCTGS) embedded till the epitaxial region. Each ANCTGS comprises a stack of polysilicon trench gate with gate oxide shell and silicon nitride cap covering top of polysilicon trench gate and laterally registered to gate oxide shell. The ANCTGS forms, together with the source, body, epitaxial region, a MOSFET device in the MOSFET array area. Over MOSFET array area and gate pickup area, a patterned dielectric region atop the MOSFET array and a patterned metal layer atop the patterned dielectric region. Thus, the patterned metal layer forms, with the MOSFET array and the gate pickup area, self-aligned source and body contacts through the inter-ANCTGS separations. | 09-11-2014 |
20140332844 | A PROCESS METHOD AND STRUCTURE FOR HIGH VOLTAGE MOSFETS - This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches each having a trench endpoint with an endpoint sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom surface. The semiconductor power device further includes a trench bottom dopant region disposed below the trench bottom surface and a sidewall dopant region disposed along the endpoint sidewall wherein the sidewall dopant region extends vertically downward along the endpoint sidewall of the trench to reach the trench bottom dopant region and pick-up the trench bottom dopant region to the top surface of the semiconductor substrate. | 11-13-2014 |
20140339630 | DEVICE STRUCTURE AND METHODS OF MAKING HIGH DENSITY MOSFETS FOR LOAD SWITCH AND DC-DC APPLICATIONS - Aspects of the present disclosure describe a high density trench-based power MOSFETs with self-aligned source contacts and methods for making such devices. The source contacts are self-aligned with spacers that are formed along the sidewall of the gate caps. Additionally, the active devices may have a two-step gate oxide. A lower portion may have a thickness that is larger than the thickness of an upper portion of the gate oxide. The two-step gate oxide combined with the self-aligned source contacts allow for the production of devices with a pitch in the deep sub-micron level. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. | 11-20-2014 |
20150145037 | HIGH DENSITY TRENCH-BASED POWER MOSFETS WITH SELF-ALIGNED ACTIVE CONTACTS AND METHOD FOR MAKING SUCH DEVICES - Aspects of the present disclosure describe a high density trench-based power MOSFET with self-aligned source contacts. The source contacts are self-aligned with a first insulative spacer and a second insulative spacer, wherein the first spacer is resistant to an etching process that will selectively remove the material the second spacer is made from. Additionally, the active devices may have a two-step gate oxide, wherein a lower portion of the gate oxide has a thickness T | 05-28-2015 |
20150194522 | SHIELDED GATE TRENCH MOS WITH IMPROVED SOURCE PICKUP LAYOUT - A method for fabricating a semiconductor device includes forming a plurality of trenches using a first mask. The trenches include source pickup trenches located in outside a termination area and between two adjacent active areas. First and second conductive regions separated by an intermediate dielectric region are formed using a second mask. A first electrical contact to the first conductive region and a second electrical contact to the second conductive region are formed using a third mask and forming a source metal region. Contacts to a gate metal region are formed using a fourth mask. A semiconductor device includes a source pickup contact located outside a termination region and outside an active region of the device. | 07-09-2015 |
20150255565 | HIGH DENSITY MOSFET ARRAY WITH SELF-ALIGNED CONTACTS ENHANCEMENT PLUG AND METHOD - A semiconductor substrate comprises epitaxial region, body region and source region; an array of interdigitated active nitride-capped trench gate stacks (ANCTGS) and self-guided contact enhancement plugs (SGCEP) disposed above the semiconductor substrate and partially embedded into the source region, the body region and the epitaxial region forming the trench-gated MOSFET array. Each ANCTGS comprises a stack of a polysilicon trench gate embedded in a gate oxide shell and a silicon nitride spacer cap covering the top of the polysilicon trench gate; each SGCEP comprises a lower intimate contact enhancement section (ICES) in accurate registration to its neighboring ANCTGS; an upper distal contact enhancement section (DCES) having a lateral mis-registration (LTMSRG) to the neighboring ANCTGS; and an intervening tapered transitional section (TTS) bridging the ICES and the DCES; a patterned metal layer atop the patterned dielectric region atop the MOSFET array forms self-guided source and body contacts through the SGCEP. | 09-10-2015 |
20150340363 | HIGH DENSITY MOSFET ARRAY WITH SELF-ALIGNED CONTACTS DELIMITED BY NITRIDE-CAPPED TRENCH GATE STACKS AND METHOD - A high density trench-gated MOSFET array and method are disclosed. It comprises semiconductor substrate partitioned into MOSFET array area and gate pickup area; epitaxial region, body region and source region; numerous precisely spaced active nitride-capped trench gate stacks (ANCTGS) embedded till the epitaxial region. Each ANCTGS comprises a stack of polysilicon trench gate with gate oxide shell and silicon nitride cap covering top of polysilicon trench gate and laterally registered to gate oxide shell. The ANCTGS forms, together with the source, body, epitaxial region, a MOSFET device in the MOSFET array area. Over MOSFET array area and gate pickup area, a patterned dielectric region atop the MOSFET array and a patterned metal layer atop the patterned dielectric region. Thus, the patterned metal layer forms, with the MOSFET array and the gate pickup area, self-aligned source and body contacts through the inter-ANCTGS separations. | 11-26-2015 |
Patent application number | Description | Published |
20090039405 | ORO AND ORPRO WITH BIT LINE TRENCH TO SUPPRESS TRANSPORT PROGRAM DISTURB - Memory devices having improved TPD characteristics and methods of making the memory devices are provided. The memory devices contain two or more memory cells on a semiconductor substrate and bit line openings containing a bit line dielectric between the memory cells. The memory cell contains a charge storage layer and a first poly gate. The bit line opening extends into the semiconductor substrate. By containing the bit line dielectric in the bit line openings that extend into the semiconductor substrate, the memory device can improve the electrical isolation between memory cells, thereby preventing and/or mitigating TPD. | 02-12-2009 |
20090042378 | USE OF A POLYMER SPACER AND SI TRENCH IN A BITLINE JUNCTION OF A FLASH MEMORY CELL TO IMPROVE TPD CHARACTERISTICS - Memory devices having improved TPD characteristics and methods of making the memory devices are provided. The memory devices contain two or more memory cells on a semiconductor substrate and bit line dielectrics between the memory cells. The bit line dielectrics can extend into the semiconductor. The memory cell contains one or more charge storage nodes, a first poly gate, a pair of first bit lines, and a pair of second bit lines. The second bit line can be formed at a higher energy level, a higher concentration of dopants, or a combination thereof compared to an energy level and a concentration of dopants of the first bit line. | 02-12-2009 |
20100264480 | USE OF A POLYMER SPACER AND SI TRENCH IN A BITLINE JUNCTION OF A FLASH MEMORY CELL TO IMPROVE TPD CHARACTERISTICS - Memory devices having improved TPD characteristics and methods of making the memory devices are provided. The memory devices contain two or more memory cells on a semiconductor substrate and bit line dielectrics between the memory cells. The bit line dielectrics can extend into the semiconductor. The memory cell contains one or more charge storage nodes, a first poly gate, a pair of first bit lines, and a pair of second bit lines. The second bit line can be formed at a higher energy level, a higher concentration of dopants, or a combination thereof compared to an energy level and a concentration of dopants of the first bit line. | 10-21-2010 |
20110278660 | ORO AND ORPRO WITH BIT LINE TRENCH TO SUPPRESS TRANSPORT PROGRAM DISTURB - Memory devices having improved TPD characteristics and methods of making the memory devices are provided. The memory devices contain two or more memory cells on a semiconductor substrate and bit line openings containing a bit line dielectric between the memory cells. The memory cell contains a charge storage layer and a first poly gate. The bit line opening extends into the semiconductor substrate. By containing the bit line dielectric in the bit line openings that extend into the semiconductor substrate, the memory device can improve the electrical isolation between memory cells, thereby preventing and/or mitigating TPD. | 11-17-2011 |
Patent application number | Description | Published |
20140131432 | Vehicular-Based Mobile Payment System And Method - A vehicular-based mobile payment system and method including a merchant system for sending and receiving information; a vehicle detection system connected to the merchant system; a vehicle comprising a mobile payment extension system, where the mobile payment extension system is adapted to communicate with the merchant system via the vehicle detection system; and a mobile device for sending and receiving information, where the mobile device is adapted to communicate with the mobile payment extension system of the vehicle. Also, a vehicular-based security system and method including a vehicle comprising a mobile communication system and a security system operatively connected with an ignition or starter system of the vehicle; and a mobile device for sending and receiving information, where the mobile device is adapted to communicate with the mobile communication system of the vehicle, and the mobile communication system is adapted to communicate with the security system. | 05-15-2014 |
20140136329 | User Interface For Vehicular-Based Mobile Payment System And Method - A user interface for a vehicular-based mobile payment system, the vehicular-based mobile payment system comprising: a merchant system for sending and receiving information; a vehicle detection system connected to the merchant system; a vehicle comprising a mobile payment extension system, wherein the mobile payment extension system is adapted to communicate with the merchant system via the vehicle detection system; and a mobile device for sending and receiving information, wherein the mobile device is adapted to communicate with the mobile payment extension system of the vehicle, where a user communicates with the mobile device via the user interface displayed on the mobile device. Also, a method and a non-transitory computer-readable storage medium related to the user interface for the vehicular-based mobile payment system. | 05-15-2014 |
20140240089 | VEHICLE SECURITY AND CUSTOMIZATION - Techniques are described for enhancing security, customization, and/or group interaction of users in vehicles. For instance, a mobile device of an owner of a vehicle may be registered in a manner that allows the mobile device to control operation of the vehicle and authorize guest user operation of the vehicle. In addition, the vehicle may be adapted to receive preferred vehicle settings from mobile devices positioned in the vehicle, such as a mobile device of a guest user, and customize the vehicle settings based on the retrieved preferences. Further, the vehicle may be equipped to communicate with in-pavement vehicle detection systems and enable interaction in an ad hoc group with other vehicles positioned to connect to the in-pavement vehicle detection systems. | 08-28-2014 |
20150038090 | VEHICLE SECURITY AND CUSTOMIZATION - Techniques are described for enhancing security, customization, and/or group interaction of users in vehicles. For instance, a mobile device of an owner of a vehicle may be registered in a manner that allows the mobile device to control operation of the vehicle and authorize guest user operation of the vehicle. In addition, the vehicle may be adapted to receive preferred vehicle settings from mobile devices positioned in the vehicle, such as a mobile device of a guest user, and customize the vehicle settings based on the retrieved preferences. Further, the vehicle may be equipped to communicate with in-pavement vehicle detection systems and enable interaction in an ad hoc group with other vehicles positioned to connect to the in-pavement vehicle detection systems. | 02-05-2015 |
20150207873 | AUTOMATED COLLABORATION FOR PEER-TO-PEER ELECTRONIC DEVICES - Automated collaboration for peer-to-peer electronic devices, in which a user profile is registered for a peer-to-peer network. The user profile defines rules for automated collaboration among electronic devices connected to the peer-to-peer network. An electronic device connected to the peer-to-peer network discovers a new electronic device joining the peer-to-peer network. The electronic device sends, to the new electronic device, the user profile and automatically, without user input at the electronic device or the new electronic device, negotiates with the new electronic device to determine how the electronic device and the new electronic device will collaboratively work together to meet the rules specified in the user profile. Based on the negotiation, the electronic device collaborates with the new electronic device in a manner that results in the new electronic device handling at least a portion of an event at the new electronic device. | 07-23-2015 |
Patent application number | Description | Published |
20100070751 | Preloader - This disclosure describes techniques and/or apparatuses for reducing the total time used to boot up a computer and load applications onto the computer. | 03-18-2010 |
20100254173 | DISTRIBUTED FLASH MEMORY STORAGE MANAGER SYSTEMS - A flash memory storage system may include several modules of flash memory storage manager circuitry, each having some associated flash memory. The modules may be interconnected via the flash memory storage manager circuitry of the modules. The system may be able to write data to and/or read data from the flash memory associated with various ones of the modules by routing the data through the flash memory storage circuitry of the modules. The system may also be able to relocate data for various reasons using such read and write operations. The flash memory storage circuitry of the modules keeps track of where data actually is in the flash memory. | 10-07-2010 |
20110068836 | SPREAD-SPECTRUM CLOCK ACQUISITION AND TRACKING - Apparatus having corresponding methods and computer-readable media comprise: a phase detector configured to generate an error signal representing a phase difference between a recovered spread-spectrum clock signal and a serial data stream that includes a spread-spectrum clock signal; and a phase selector configured to provide the recovered spread-spectrum clock signal based on an error signal from a current spread-spectrum cycle of the spread-spectrum clock signal and an error signal from a previous spread-spectrum cycle of the spread-spectrum clock signal. | 03-24-2011 |
20110119438 | FLASH MEMORY FILE SYSTEM - Apparatus having corresponding methods and computer-readable media comprise: a plurality of flash modules, wherein each of the flash modules comprises a cache memory; a flash memory; and a flash controller in communication with the cache memory and the flash memory; wherein the flash controller of a first one of the flash modules is configured to operate the cache memories together as a global cache; wherein the flash controller of a second one of the flash modules is configured to operate a second one of the flash modules as a directory controller for the flash memories. | 05-19-2011 |
20120327697 | DISTRIBUTED FLASH MEMORY STORAGE MANAGER SYSTEMS - A flash memory storage system may include several modules of flash memory storage manager circuitry, each having some associated flash memory. The modules may be interconnected via the flash memory storage manager circuitry of the modules. The system may be able to write data to and/or read data from the flash memory associated with various ones of the modules by routing the data through the flash memory storage circuitry of the modules. The system may also be able to relocate data for various reasons using such read and write operations. The flash memory storage circuitry of the modules keeps track of where data actually is in the flash memory. | 12-27-2012 |
20130046966 | Preloader - This disclosure describes techniques and/or apparatuses for reducing the total time used to boot up a computer and load applications onto the computer. | 02-21-2013 |
20130159595 | Serial Interface for FPGA Prototyping - In aspects of serial interface for FPGA prototyping, an advanced crossbar interconnect (AXI) bridge structure enables serial data communication between field programmable gate arrays (FPGA) in a system-on-chip (SoC). The AXI bridge structure includes a parallel interface configured to receive AXI data signals from an AXI component implemented at a first FPGA. A transmit (TX) engine is configured to packetize the AXI data signals into an AXI data packet, and transmit the AXI data packet to a second FPGA via a serial link. The AXI bridge structure also includes a receive (RX) engine configured to receive an additional AXI data packet from the second FPGA via the serial link, and extract AXI data signals from the additional AXI data packet. The parallel interface is further configured to provide the additional AXI data signals to the AXI component. | 06-20-2013 |
20150058383 | SYSTEMS AND METHODS FOR OPERATING A FLASH MEMORY FILE SYSTEM - A flash memory file system including a plurality of flash modules. Each of the plurality of flash modules includes a respective cache memory, a respective flash memory, and a respective flash controller in communication with the respective cache memory and the respective flash memory. A first flash module of the plurality of flash modules is configured to receive a file lookup message including a path name for file data stored on a second flash module of the plurality of flash modules. A third flash module of the plurality of flash modules is configured to select the second flash module based on the path name and a directory table, and generate a file metadata message responsive to the file lookup message. The file metadata message identifies the second flash module as containing the file data. | 02-26-2015 |
Patent application number | Description | Published |
20100158236 | System and Methods for Tracking Unresolved Customer Involvement with a Service Organization and Automatically Formulating a Dynamic Service Solution - A system for managing customer involvement with a contact center involves one or more monitoring applications executing on one or more computerized servers associated with the contact center, the applications monitoring communications between individual customers and the center; and a rules engine executing on the one or more computerized servers, the rules engine accessible to the monitoring application, the rules engine enabled to generate and implement business rules. Upon detection by one of the monitoring applications of an instance of unsuccessful or incomplete interaction between a customer and the contact center, session data determined during monitoring is used by the rules engine to determine contact center-initiated activity to be implemented to establish new communication with the customer to resolve issues related to the unsuccessful or incomplete interaction. | 06-24-2010 |
20100161540 | Method for Monitoring and Ranking Web Visitors and Soliciting Higher Ranked Visitors to Engage in Live Assistance - A ranking system ranks visitors to a Web site using one or more instances of machine-readable code executable from a digital medium accessible to a Web server. The code tracks visitor behavior while browsing the web site, and a visitor ranking module resident on the digital medium accepts information documented by the one or more instances of machine readable code and assigns rank values to one or more of the visitors. The ranking module ranks visitors at the Web-site based on logic and rules for interpreting visitor behavior and for applies a value to the visitor in real time based on that interpretation, and values applied at or above a preprogrammed level trigger solicitation of the visitor so ranked to engage in interaction including live assistance. | 06-24-2010 |
20120124476 | Method for Interacting with a Multimedia Presentation Served by an Interactive Response Unit - A system for interacting with a multimedia presentation includes one or more machine-readable codes embedded in a plurality of sequential frames or in individual slides of a multimedia presentation, the frames or slides defining at least one interactive portion of a larger multimedia presentation, a touch-screen driver extension resident on a digital medium and transferable over a network to the digital medium of a touch-screen operated multi-media device, the extension enabling interpretation at the multimedia-enabled interactive response unit of touch-screen taps input during play of the multimedia presentation, and a set of machine instructions resident on a digital medium coupled to or accessible to a multimedia-enabled interactive response system, the machine instructions executable by physical interaction with the one or more of the machine-readable codes in the multimedia presentation to serve one or more additional multimedia presentations to the touch-screen multimedia device. | 05-17-2012 |
20140177818 | VIRTUAL DESKTOP INTERFACE FOR A SERVICE CALL CENTER - A method for operating an agent terminal in a call routing environment in which an agent server routes customer service calls to the agent terminal. The method includes the agent terminal establishing a communication link with the agent server over a network, configuring an agent terminal display to display service metric parameters related to an incoming customer service call to be routed to the agent terminal, wherein the service metric parameters are retrieved via the communication link from a configuration database of the agent server; and monitoring and displaying on the agent terminal display: updated service metric parameters throughout a customer service call routed from the agent server. | 06-26-2014 |
20140341369 | SYSTEM AND METHODS FOR TRACKING UNRESOLVED CUSTOMER INVOLVEMENT WITH A SERVICE ORGANIZATION AND AUTOMATICALLY FORMULATING A DYNAMIC SERVICE SOLUTION - A system for managing customer involvement with a contact center involves one or more monitoring applications executing on one or more computerized servers associated with the contact center, the applications monitoring communications between individual customers and the center; and a rules engine executing on the one or more computerized servers, the rules engine accessible to the monitoring application, the rules engine enabled to generate and implement business rules. Upon detection by one of the monitoring applications of an instance of unsuccessful or incomplete interaction between a customer and the contact center, session data determined during monitoring is used by the rules engine to determine contact center-initiated activity to be implemented to establish new communication with the customer to resolve issues related to the unsuccessful or incomplete interaction. | 11-20-2014 |