Patent application number | Description | Published |
20080272462 | Nitride-Based Semiconductor Device and Method for Fabricating the Same - A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure | 11-06-2008 |
20080273562 | Nitride Semiconductor Device and Method for Fabricating the Same - A nitride semiconductor device | 11-06-2008 |
20090022193 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate | 01-22-2009 |
20090159921 | NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SUCH NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor device according to the present invention includes a n-GaN substrate | 06-25-2009 |
20090294797 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - A semiconductor light-emitting device according to the present invention includes: a GaN substrate | 12-03-2009 |
20090317597 | NANOSTRUCTURE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a nanostructure on an upper surface of which a small-diameter carbon nanotube (CNT) is formed and which improves an adhesive strength between a substrate and the CNT while controlling an orientation of the CNT, and a method for manufacturing the nanostructure. The nanostructure includes a substrate | 12-24-2009 |
20100086837 | ENERGY DEVICE, METHOD FOR MANUFACTURING THE SAME, AND APPARATUS INCLUDING THE SAME - The present invention provides an energy device including a carbon nanotube electrode which prevents a carbon nanotube from peeling from an electric conductor. The energy device includes rolled electrode bodies, wherein at least one of the electrode bodies is formed such that a carbon nanotube layer is formed on the electric conductor, and concave regions are formed in a stripe shape on the carbon nanotube layer so as to extend in a direction parallel to a roll axis. | 04-08-2010 |
20100148145 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting device according to the present invention includes a nitride based semiconductor substrate | 06-17-2010 |
20100226401 | NITRIDE COMPOUND SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME - The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure | 09-09-2010 |
20100244063 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device according to the present invention has a nitride-based semiconductor multilayer structure | 09-30-2010 |
20100259184 | LIGHT-EMITTING DEVICE - A light-emitting device according to the present invention includes a plurality of columnar semiconductors | 10-14-2010 |
20110031522 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 02-10-2011 |
20110037088 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 02-17-2011 |
20110037089 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 02-17-2011 |
20110101372 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME - A nitride-based semiconductor light-emitting device | 05-05-2011 |
20110156048 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 06-30-2011 |
20110159667 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A method for fabricating a semiconductor device according to the present invention includes the steps of: growing a p-type gallium nitride-based compound semiconductor layer by performing a metalorganic chemical vapor deposition process in a heated atmosphere so that the crystal-growing plane of the semiconductor layer is an m plane (Step S | 06-30-2011 |
20110179993 | CRYSTAL GROWTH PROCESS FOR NITRIDE SEMICONDUCTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A nitride semiconductor layer formation method includes the steps of: (S1) placing a substrate in a reaction chamber, the substrate including an m-plane nitride semiconductor crystal at least in an upper surface; (S2) increasing a temperature of the substrate by heating the substrate placed in the reaction chamber; and (S3) growing a nitride semiconductor layer on the substrate. In the temperature increasing step (S2), a nitrogen source gas and a Group III element source gas are supplied into the reaction chamber, whereby an m-plane nitride semiconductor crystal having a smooth surface can be formed even if the thickness of the layer is 400 nm, and its growth time can be greatly decreased. | 07-28-2011 |
20110198568 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCTION THEREOF - A light-emitting apparatus of the present invention includes: a mounting base | 08-18-2011 |
20110215340 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - A semiconductor light-emitting device according to the present invention includes: a GaN substrate | 09-08-2011 |
20110248307 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME - A nitride-based semiconductor light-emitting device | 10-13-2011 |
20110248308 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 10-13-2011 |
20110253976 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 10-20-2011 |
20110253977 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 10-20-2011 |
20110266575 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an m-plane; and an electrode that is arranged on the p-type semiconductor region, wherein the p-type semiconductor region is made of an Al | 11-03-2011 |
20110272670 | NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer. | 11-10-2011 |
20110284905 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 11-24-2011 |
20110297956 | METHOD FOR MANUFACTURING GALLIUM NITRIDE COMPOUND SEMICONDUCTOR, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT - The present invention is a method of manufacturing a gallium nitride-based compound semiconductor, including growing an m-plane InGaN layer whose emission peak wavelength is not less than 500 nm by metalorganic chemical vapor deposition. Firstly, step (A) of heating a substrate in a reactor is performed. Then, step (B) of supplying into the reactor a gas which contains an In source gas, a Ga source gas, and a N source gas and growing an m-plane InGaN layer of an In | 12-08-2011 |
20110304025 | NITRIDE COMPOUND SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD THEREFOR - A nitride compound semiconductor element according to the present invention is a nitride compound semiconductor element including a substrate | 12-15-2011 |
20120001223 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF - A nitride-based semiconductor light-emitting device | 01-05-2012 |
20120002134 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, ILLUMINATING DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING ILLUMINATING DEVICE - An illuminating device according to the present invention includes at least a first nitride-based semiconductor light-emitting element and a second nitride-based semiconductor light-emitting element, in which: the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each include a semiconductor chip; the semiconductor chip includes a nitride-based semiconductor multilayer structure | 01-05-2012 |
20120002693 | NITRIDE COMPOUND SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME - The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure | 01-05-2012 |
20120021549 | METHOD FOR GROWING CRYSTALS OF NITRIDE SEMICONDUCTOR, AND PROCESS FOR MANUFACTURE OF SEMICONDUCTOR DEVICE - A nitride semiconductor layer formation method includes the steps of: (S1) placing a substrate in a reaction chamber, the substrate including a −r-plane nitride semiconductor crystal at least in an upper surface; (S2) increasing a temperature of the substrate by heating the substrate placed in the reaction chamber; and (S3) growing a nitride semiconductor layer on the substrate. In the temperature increasing step (S2), a nitrogen source gas and a Group III element source gas are supplied into the reaction chamber. | 01-26-2012 |
20120058577 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT | 03-08-2012 |
20120085986 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DIODE - The light-emitting diode element of this invention includes: an n-type GaN substrate ( | 04-12-2012 |
20120091463 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR - A nitride-based semiconductor light-emitting device according to the present invention has a nitride-based semiconductor multilayer structure | 04-19-2012 |
20120091490 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - Provided is a light-emitting device including: a nitride semiconductor light-emitting element ( | 04-19-2012 |
20120113656 | LIGHT-EMITTING DIODE - A light-emitting diode element includes: an n-type conductive layer | 05-10-2012 |
20120146048 | GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE - Provided is a gallium nitride-based compound semiconductor light-emitting element, in which the concentration of Mg which is a p-type dopant in a p-GaN layer in which the (10-10) m-plane of a hexagonal wurtzite structure grows is adjusted in a range from 1.0×10 | 06-14-2012 |
20120153258 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride-based semiconductor light-emitting element includes an n-GaN layer | 06-21-2012 |
20120168811 | NITRIDE-TYPE SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCTION THEREOF - A nitride-based semiconductor device includes a p-type Al | 07-05-2012 |
20120182495 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHTING DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, AND METHOD FOR PRODUCING LIGHTING DEVICE - An illuminating device includes at least first and second nitride-based semiconductor light-emitting elements each having a semiconductor chip with an active layer region. The active layer region is at an angle of 1° or more with an m plane, and an angle formed by a normal line of a principal surface in the active layer region and a normal line of the m plane is 1° or more and 5° or less. The first and second nitride-based semiconductor light-emitting elements have thicnknesses of d | 07-19-2012 |
20120199844 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor device according to the present disclosure includes a nitride-based semiconductor multilayer structure | 08-09-2012 |
20120211725 | NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR - A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure | 08-23-2012 |
20120244686 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - An exemplary method for fabricating a semiconductor device includes the steps (a) growing a p-type gallium nitride-based compound semiconductor layer in a heated atmosphere; (b) cooling the p-type gallium nitride-based compound semiconductor layer; (c) forming three or more well layers before the step (a); and (d) forming an n-type semiconductor layer on a substrate before the step (c), wherein the step (c) includes growing each of the well layers to a thickness of 5 nm or more with the supply of the hydrogen gas to the reaction chamber cut off, and wherein the step (a) includes supplying hydrogen gas to the reaction chamber, and wherein the step (b) includes cooling the p-type gallium nitride-based compound semiconductor layer with the supply of the hydrogen gas to the reaction chamber cut off. | 09-27-2012 |
20120267664 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a nitride-based semiconductor light-emitting device includes a step (a) of forming a nitride-based semiconductor multi-layer structure ( | 10-25-2012 |
20120319156 | NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR - An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure | 12-20-2012 |
20120326161 | NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR - An exemplary nitride-based semiconductor device includes: a semiconductor multilayer structure | 12-27-2012 |
20130001513 | NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR - A nitride-based semiconductor device includes: a semiconductor multilayer structure | 01-03-2013 |
20130009187 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 01-10-2013 |
20130009196 | LIGHT-EMITTING DIODE ELEMENT AND LIGHT-EMITTING DIODE DEVICE - A light-emitting diode element disclosed in the present application, comprises a first semiconductor layer made of a gallium nitride-based compound and having first and second front surface regions and a rear surface, a second semiconductor layer at the first front surface region and an active layer interposed therebetween. A first electrode is provided on a principal surface of the second semiconductor layer. A second electrode is provided at the second front surface region. A third electrode is provided on the rear surface. A thorough hole having openings in the second front surface region and the rear surface is provided in the first semiconductor layer, and a conductor portion is provided in the through hole. | 01-10-2013 |
20130015427 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 01-17-2013 |
20130040411 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method includes the step of preparing a GaN-based substrate 10, the step of forming on the substrate a nitride-based semiconductor multilayer structure including a p-type Al | 02-14-2013 |
20130092968 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 04-18-2013 |
20130119398 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 05-16-2013 |
20130122693 | NITRIDE COMPOUND SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD THEREFOR - A nitride compound semiconductor element according to the present invention is a nitride compound semiconductor element including a substrate | 05-16-2013 |
20130126898 | GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT SOURCE PROVIDED WITH SAID LIGHT EMITTING ELEMENT - In a gallium nitride based compound semiconductor light-emitting element including an active layer, the active layer includes a well layer | 05-23-2013 |
20130126900 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - Around a nitride-based semiconductor light-emitting element which has a polarization characteristic, a transparent encapsulating member which has a cylindrical shape is provided such that the symmetry plane of the cylindrical shape forms an angle of 25° to 65° with respect to the polarization direction of the nitride-based semiconductor light-emitting element. | 05-23-2013 |
20130126901 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer | 05-23-2013 |
20130126902 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer | 05-23-2013 |
20130146928 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting element | 06-13-2013 |
20130168733 | SEMICONDUCTOR-STACKED SUBSTRATE, SEMICONDUCTOR CHIP, AND METHOD FOR PRODUCING SEMICONDUCTOR-STACKED SUBSTRATE - Disclosed is a semiconductor-stacked substrate having a substrate, and a plurality of semiconductor layers which are different in thermal expansion coefficient from the substrate, and are formed in a plurality of regions of a surface of the substrate, respectively. Each semiconductor layer has a growth plane that is a nonpolar plane or a semi-polar plane, and has different thermal expansion coefficients between along a first axis and a second axis orthogonal to each other and parallel to the surface of the substrate. The following mathematical formula 1 is satisfied. D | 07-04-2013 |
20130175566 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride-based semiconductor light-emitting element includes a substrate and a nitride semiconductor multilayer structure. The nitride semiconductor multilayer structure includes a nitride semiconductor active layer which emits polarized light. Angle θ, which is formed by at least one of the plurality of lateral surfaces of the substrate with respect to the principal surface of the substrate, is greater than 90°. Angle θ | 07-11-2013 |
20130207150 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride-based semiconductor light-emitting device of the present disclosure includes: a semiconductor multilayer structure which includes an active layer that is made of a nitride semiconductor, a principal surface of the nitride semiconductor being a semi-polar plane or a non-polar plane and which has recessed/elevated surfaces including at least either of recessed portions and elevated portions; an electrode covering a side of the semiconductor multilayer structure at which the recessed/elevated surfaces is provided, the electrode being configured to reflect at least part of light emitted from the active layer; and a birefringent substrate provided on a side of the semiconductor multilayer structure which is opposite to the recessed/elevated surfaces, the birefringent substrate being configured to transmit light emitted from the active layer and light reflected by the electrode. | 08-15-2013 |
20130214288 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR - A nitride-based semiconductor light-emitting device of an embodiment includes a semiconductor multilayer structure having a growing plane which is an m-plane and being made of a GaN-based semiconductor. The semiconductor multilayer structure includes a n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode provided on the p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. The ratio of the thickness of the active layer to the thickness of the n-type semiconductor layer, D, is in the range of 1.8×10 | 08-22-2013 |
20130223463 | NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer. | 08-29-2013 |
20130234110 | GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME - A gallium nitride based compound semiconductor light-emitting element according to an embodiment of the present disclosure includes: an n-type gallium nitride based compound semiconductor layer; a p-type gallium nitride based compound semiconductor layer; and an active layer which is arranged between the n- and p-type gallium nitride based compound semiconductor layers. The active layer and the p-type gallium nitride based compound semiconductor layer are m-plane semiconductor layers. The p-type gallium nitride based compound semiconductor layer includes magnesium at a concentration of 2.0×10 | 09-12-2013 |
20130234179 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride-based semiconductor light-emitting element disclosed in the present application includes: an active layer having a growing plane which is an m-plane and which is made of a GaN-based semiconductor; and at least one radiation surface at which light from the active layer is to be radiated. The radiation surface has a plurality of protrusions on the m-plane. A base of each of the plurality of protrusions is a region inside a closed curve, and a shape of the base has a major axis and a minor axis. An angle between the major axis and an extending direction of an a-axis of a crystal is not more than 45°. | 09-12-2013 |
20130240942 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting chip including a nitride semiconductor active layer having a nonpolar plane as a growth surface is configured such that when regions of a surface of a mounting substrate illuminated with light from the active layer and located laterally outward from the chip along a crystal axis that is parallel to the active layer and perpendicular to a polarization direction from the active layer are high polarization regions, and regions of the surface of the substrate illuminated with the light from the active layer except the high polarization regions are low polarization regions, metal is placed on a portion of the high polarization regions, and the proportion of mirror reflection from a portion of the low polarization regions is lower than that from the metal, and the proportion of mirror reflection from the high polarization regions is higher than that from the low polarization regions. | 09-19-2013 |
20130248877 | GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT SOURCE, AND METHOD FOR FORMING UNEVENNESS STRUCTURE - The light extraction surface of a nitride semiconductor light-emitting element, including a crystal plane other than a c plane, is subjected to a surface modification process to control its wettability, and then covered with a layer of fine particles. By etching that layer of fine particles after that, an unevenness structure, in which roughness curve elements have an average length (RSm) of 150 nm to 800 nm, is formed on the light extraction surface. | 09-26-2013 |
20130270574 | NITRIDE-BASED SEMICONDUCTOR ELEMENT AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor element according to an embodiment of the present disclosure includes: a p-type contact layer, of which the growing plane is an m plane; and an electrode which is arranged on the growing plane of the p-type contact layer. The p-type contact layer is a GaN-based semiconductor layer which has a thickness of 26 nm to 60 nm and which includes oxygen at a concentration that is equal to or higher than Mg concentration of the p-type contact layer. In the p-type contact layer, the number of Ga vacancies is larger than the number of N vacancies. | 10-17-2013 |
20130334986 | NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LED SYSTEM - A nitride semiconductor light emitting element includes a light emitting layer. The light emitting layer includes an In | 12-19-2013 |
20140014997 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LIGHT SOURCE INCLUDING THE NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride semiconductor light-emitting element includes: n-side and p-side electrodes; n-type and p-type nitride semiconductor layers; and an active layer arranged between the n- and p-type nitride semiconductor layers. The p-type nitride semiconductor layer has a projection having a height of 30 nm to 50 nm. The projection is formed of a p-type nitride semiconductor including magnesium and silicon. The p-type nitride semiconductor has a silicon concentration of 1.0×10 | 01-16-2014 |
20140034961 | SURFACE-MODIFIED SEMICONDUCTOR, METHOD OF MAKING THE SEMICONDUCTOR, AND METHOD OF ARRANGING PARTICLES - The terminating layer that covers the top layer of a GaN-based semiconductor having a principal surface which is either a non-polar plane or a semi-polar plane, is removed by performing an organic solvent cleaning process step, and replaced with an organic solvent cleaned layer. Next, by irradiating the semiconductor with an ultraviolet ray, the organic solvent cleaned layer is removed to form a surface-modified layer instead. By performing these process steps, the top layer of the GaN-based semiconductor becomes the surface-modified layer and an electrical polarity is given to the surface of the GaN-based semiconductor. As a result, the hydrophilicity, hydrophobicity and wettability of the GaN-based semiconductor can be controlled. | 02-06-2014 |
20140042456 | NITRIDE SEMICONDUCTOR LIGHT EMITTING CHIP, AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting chip includes: a conductive substrate including a nitride semiconductor layer; an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer sequentially formed on a principal surface of the nitride semiconductor layer; and an n-side electrode formed in contact with the conductive substrate. A recess is formed in a back surface of the conductive substrate opposite to the principal surface. The n-side electrode is in contact with at least part of a surface of the recess. A depth D1 is not less than 25% of a thickness T, where T represents a thickness of the conductive substrate, and D1 represents a depth of the recess. | 02-13-2014 |
20140042468 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light emitting device includes: a semiconductor chip having a growth surface that is a nonpolar or semipolar plane, and emitting polarized light; and a reflector having a reflective surface. At least part of light in a plane L | 02-13-2014 |
20140048771 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND LIGHT SOURCE - A nitride semiconductor light-emitting element uses a non-polar plane as its growing plane. A GaN/InGaN multi-quantum well active layer includes an Si-doped layer which is arranged in an In | 02-20-2014 |
20140048821 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light-emitting device includes a nitride semiconductor light-emitting chip including an active layer for outputting polarized light, the active layer having a non-polar plane or a semi-polar plane as a growth plane; and a light-transmissive cover for transmitting light from the active layer. The light-transmissive cover includes a first light-transmissive member located in an area, among areas to the side of the nitride semiconductor light-emitting chip, and in a direction perpendicular to a polarization direction of the polarized light, and a second light-transmissive member located in an area above the nitride semiconductor light-emitting chip. The first light-transmissive member has a higher diffuse transmittance than the second light-transmissive member. | 02-20-2014 |
20140048827 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes: a semiconductor chip having a growth surface that is a nonpolar or semipolar plane, and emitting polarized light; and a reflector having a reflective surface. At least part of light in a plane L | 02-20-2014 |
20140054623 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes: a semiconductor chip having a nonpolar plane as a growth surface and configured to emit polarized light; and a reflector having a reflective surface. When a plane forming an angle of 45° relative to a direction of polarization of the polarized light is a plane L | 02-27-2014 |
20140054636 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME - This nitride-based semiconductor light-emitting element includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, the nitride-based semiconductor multilayer structure having a growing plane which is an m-plane; and an electrode which is arranged on an Al | 02-27-2014 |
20140057380 | NITRIDE-TYPE SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCTION THEREOF - A nitride-based semiconductor device includes a p-type Al | 02-27-2014 |
20140070255 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting device includes: a semiconductor light-emitting chip held on a mounting surface of a mounting substrate, having a growth surface that is a nonpolar or semipolar plane, and emitting polarized light; a reflector surrounding the semiconductor light-emitting chip when viewed in plan and having a reflective surface off which the polarized light is reflected; and a coupler held on the mounting surface of the mounting substrate and holding the reflector such that the reflector is rotatable around the semiconductor light-emitting chip. | 03-13-2014 |
20140077223 | STRUCTURE FOR GROWTH OF NITRIDE SEMICONDUCTOR LAYER, STACKED STRUCTURE, NITRIDE-BASED SEMICONDUCTOR ELEMENT, LIGHT SOURCE, AND MANUFACTURING METHOD FOR SAME - A structure for growth of a nitride semiconductor layer which is disclosed in this application includes: a sapphire substrate of which growing plane is an m-plane; and a plurality of ridge-shaped nitride semiconductor layers provided on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m-plane of the sapphire substrate, the growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0° and not more than 35°. | 03-20-2014 |
20140103292 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND LIGHT SOURCE APPARATUS USING THE DEVICE - A gallium nitride-based compound semiconductor light-emitting device formed of nitride semiconductor expressed by a general expression Al | 04-17-2014 |
20140110747 | LIGHT-EMITTING DIODE ELEMENT AND LIGHT-EMITTING DIODE DEVICE - Disclosed is a light-emitting diode element including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, an active layer. A first electrode is provided on a surface of the second semiconductor layer. A second electrode is provided in a second region of the principal surface of the first semiconductor layer. A conductive layer is arranged such that the conductive layer covers a third region, a fourth region, and a fifth region in the rear surface of the first semiconductor layer. In the rear surface of the first semiconductor layer, the first semiconductor layer includes a sixth region which is not covered with the conductive layer and which overlaps another part of the first electrode. The first semiconductor layer is not provided with a through electrode. | 04-24-2014 |
20140124816 | STRUCTURE FOR GROWTH OF NITRIDE SEMICONDUCTOR LAYER, STACKED STRUCTURE, NITRIDE-BASED SEMICONDUCTOR ELEMENT, LIGHT SOURCE, AND MANUFACTURING METHOD FOR SAME - A structure for growth of a nitride semiconductor layer which is disclosed in this application includes: a sapphire substrate of which growing plane is an m-plane; and a plurality of ridge-shaped nitride semiconductor layers provided on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m-plane of the sapphire substrate, the growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0° and not more than 35°. | 05-08-2014 |
20140217423 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR FORMING RECESSES OF THE SAME, AND LIGHT SOURCE APPARATUS USING THE SAME - A semiconductor light-emitting device made of a nitride-based semiconductor includes a semiconductor stacked structure having a nonpolar plane or a semipolar plane as a principal plane, and including an active layer for emitting polarized light. The semiconductor light-emitting device includes a striped structure which is provided in a position intersecting an exit path of the polarized light and includes a plurality of recesses. An angle formed between the extension direction of the recesses and the polarization direction of the polarized light is from 0° to 45°. The recesses have a minute uneven structure (texture) at at least part of a surface of each recess, the minute uneven structure being shallower than the depth of each recess. | 08-07-2014 |
20140264372 | STRUCTURE AND MANUFACTURING METHOD OF THE STRUCTURE, AND GALLIUM NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE USING THE STRUCTURE AND MANUFACTURING METHOD OF THE DEVICE - In a structure including a gallium nitride-based semiconductor having an m-plane as a principal plane, and a metal layer provided on the principal plane, the principal plane has an n-type conductivity. An interface between the gallium nitride-based semiconductor and the metal layer contains oxygen. The metal layer includes a crystal grain extending form a lower surface to an upper surface of the metal layer. | 09-18-2014 |
20140353699 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE - Provided is a nitride semiconductor light-emitting diode having a higher light extraction efficiency and a higher polarization degree. A nitride semiconductor light-emitting diode according to the present invention comprises an active layer generating a polarized light, a first side surface, a second side surface, a third side surface, and a fourth side surface. The first and second side surfaces consist only of a plane including the Z-axis and the Y-axis. The third and fourth side surfaces are perpendicular to the first and second side surfaces and include the X-axis. The third and fourth side surfaces include an inclined surface. | 12-04-2014 |
20140370685 | METHOD FOR FORMING A GROOVE ON A SURFACE OF FLAT PLATE FORMED OF A NITRIDE SEMICONDUCTOR CRYSTAL - Provided is a novel method for forming a groove composed of two smooth inclined surfaces on a surface of a flat plate formed of a nitride semiconductor crystal having an A, C, M-axes. In the present invention, a disk-shaped dicing blade is moved along a direction of the A-axis to form first and second inclined surfaces on the surface of the flat plate. The following mathematical formulae (I)-(III) are satisfied: 45 degrees≦θb−a≦60 degrees (I) 45 degrees≦θb+a≦60 degrees (II), 0 degrees≦|a|≦7.5 degrees, where angle θb represents an angle formed between a surface of the edge and a radial direction of the dicing blade in a cross-sectional view which includes the M-axis and the C-axis. The angle a represents an angle formed between the principal surface and the M-axis. | 12-18-2014 |
20150021652 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - The present invention improves luminous efficiency of a nitride semiconductor light-emitting element. In the nitride semiconductor light-emitting element, a non-polar or semi-polar Al | 01-22-2015 |
20150021653 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME - Provided is a nitride semiconductor light-emitting element having a low contact resistance between an n-type nitride semiconductor layer and an n-side electrode. A portion of the n-type nitride semiconductor layer is removed by a plasma etching process using a gas containing halogen to expose a surface region | 01-22-2015 |