Patent application number | Description | Published |
20080271835 | Method for Relaxing a Stressed Thin Film - A method relaxing a strained thin film, secured via a first main face of an initial support, the second main face of the thin film being a contact face. The method supplies an intermediate support including a polymer layer having a main free contact face, the polymer's thermal expansion coefficient being greater than that of the thin film, adhesively brings into contact the contact face of the strained thin film with the contact face of the polymer layer, eliminates the initial support, realizing relaxation of the thin film through formation of wrinkles and revealing the first main face of the thin film, increases the polymer layer temperature to stretch the relaxed thin film and eliminate the wrinkles, secures the first main face of the thin film with one face of a receiving substrate, and eliminates the intermediate support to obtain a relaxed thin film integral with the receiving substrate. | 11-06-2008 |
20090156016 | METHOD FOR TRANSFER OF A THIN LAYER - A method for transferring a thin layer from an initial substrate includes forming an assembly of the initial substrate with one face of a silicone type polymer layer, this face having been treated under an ultraviolet radiation, and processing the initial substrate to form the thin layer on the silicone type polymer layer. | 06-18-2009 |
20090165277 | METHOD AND DEVICE FOR SEPARATING A STRUCTURE - A method of separating a structure including a fragile zone delimiting two substructures to be separated, where at least one plane blade is advanced in a separation plane corresponding to a median plane of the fragile zone, from an entry edge of the structure in a direction of advance toward an exit edge of the structure, so as to cause progressive separation of the two substructures, and where the inclination of the blade in the separation plane is varied relative to the direction of advance. | 07-02-2009 |
20090262294 | PROCESS FOR FABRICATING A FLEXIBLE ELECTRONIC DEVICE OF THE SCREEN TYPE, INCLUDING A PLURALITY OF THIN-FILM COMPONENTS - In the fabrication of a thin-film flexible electronic device of the screen type that includes a plurality of thin-film components on a glass support a starting support is prepared, including a rigid bulk substrate and a glass sheet fastened to the rigid bulk substrate by reversible direct bonding so as to obtain a removable interface. The plurality of thin-film components are fabricated on the glass sheet. The glass sheet is separated from the rigid bulk substrate by disassembling the interface and, the glass sheet and the plurality of thin-film components are transferred to a final support. | 10-22-2009 |
20110033976 | SELF-ASSEMBLY OF CHIPS ON A SUBSTRATE - A method of forming, on a surface of a substrate, at least one hydrophilic attachment area for the purpose of self-assembling a component or a chip, in which a hydrophobic area, which delimits the hydrophilic attachment area, is produced. | 02-10-2011 |
20110104829 | METHOD OF TRANSFER BY MEANS OF A FERROELECTRIC SUBSTRATE - A method of carrying out a transfer of one or more first components or of a first layer onto a second substrate including: a) application and maintaining, by electrostatic effect, of the one or more first components or of the first layer, on a first substrate, made of a ferroelectric material, electrically charged, b) placing in contact, direct or by molecular adhesion, and transfer of the components or the layer onto a second substrate, and c) dismantling of the first substrate, leaving at least one part of the components or the layer on the second substrate. | 05-05-2011 |
20120097296 | METHOD FOR MODIFYING THE CRYSTALLINE STRUCTURE OF A COPPER ELEMENT - A method for modifying crystalline structure of a copper element with a planar surface, including: a) producing a copper standard having large grains, wherein the standard includes a planar surface, b) reducing roughness of the planar surfaces to a roughness of less than 1 nm, c) cleaning the planar surfaces, d) bringing the two planar surfaces into contact, and e) annealing. | 04-26-2012 |
20120100657 | SIMPLIFIED COPPER-COPPER BONDING - A method for bonding a first copper element onto a second copper element including forming a crystalline copper layer enriched in oxygen on each of surfaces of each of the first and second elements through which the elements will be in contact, the total thickness of both layers being less than 6 nm, which includes: a) polishing the surfaces so as to obtain a roughness of less than 1 nm RMS, and hydrophilic surfaces, b) cleaning the surfaces to suppress presence of particles due to the polishing and the major portion of corrosion inhibitors, and c) putting both crystalline copper layer enriched in oxygen in contact with each other. | 04-26-2012 |
20120252162 | METHODS FOR BONDING SEMICONDUCTOR STRUCTURES INVOLVING ANNEALING PROCESSES, AND BONDED SEMICONDUCTOR STRUCTURES FORMED USING SUCH METHODS - Methods of bonding together semiconductor structures include annealing a first metal feature on a first semiconductor structure, bonding the first metal feature to a second metal feature of a second semiconductor structure to form a bonded metal structure that comprises the first metal feature and the second metal feature, and annealing the bonded metal structure. Annealing the first metal feature may comprise subjecting the first metal feature to a pre-bonding thermal budget, and annealing the bonded metal structure may comprise subjecting the bonded metal structure to a post-bonding thermal budget that is less than the pre-bonding thermal budget. Bonded semiconductor structures are fabricated using such methods. | 10-04-2012 |
20130153093 | TREATMENT, BEFORE THE BONDING OF A MIXED CU-OXIDE SURFACE, BY A PLASMA CONTAINING NITROGEN AND HYDROGEN - A method for bonding a first surface provided with at least one copper area surrounded by a silicon oxide area to a second surface includes an operation of treatment of the first surface by a plasma, before placing the first surface in contact with the second surface. The plasma is formed from a gas source containing a silicon oxide nitriding agent and a copper oxide reducing agent containing hydrogen. The gas source may include an N | 06-20-2013 |
20130217207 | METHOD FOR DIRECTLY ADHERING TWO PLATES TOGETHER, INCLUDING A STEP OF FORMING A TEMPORARY PROTECTIVE NITROGEN LAYER - To avoid problems of hydrolysis of the silicon oxide formed by PECVD at the surface of at least one wafer, it is proposed to cover, in the vacuum deposition chamber used to deposit the silicon oxide, said oxide with a temporary protective layer containing nitrogen. The protective layer thus protects the silicon oxide against the outer environment and especially against humidity when the wafer provided with the silicon oxide is stored outside of the vacuum deposition chamber. Afterwards, the protective layer is removed, for example, by chemical-mechanical. polishing, just before the two wafers are placed into contact. The protective layer may be formed by a PECVD silicon nitride deposition, by plasma nitriding or nitrogen doping of a superficial portion of the silicon oxide. | 08-22-2013 |
20130270328 | PROCESS FOR DIRECT BONDING TWO ELEMENTS COMPRISING COPPER PORTIONS AND PORTIONS OF DIELECTRIC MATERIALS - A process of assembly by direct bonding of a first and second element, each having a surface including copper portions separated by a dielectric material, the process includes: polishing the surfaces such that the surfaces to be assembled allow assembly by bonding; forming a diffusion barrier selectively in copper portions of the first and second elements, wherein the surface of the diffusion barrier of the first and second elements is level with the surface, to within less than 5 nanometers; and bringing the two surfaces into contact, such that the copper portions of one surface cover at least partly the copper portions of the other surface, and such that direct bonding is obtained between the surfaces. | 10-17-2013 |
20140283367 | SUPPORT FOR CAPILLARY SELF-ASSEMBLY WITH HORIZONTAL STABILISATION, FABRICATION METHOD AND USE - Support comprising a reception zone in which the external envelope matches the shape of a plate (P | 09-25-2014 |
20140342528 | METHOD FOR THE DIRECT BONDING OF A SILICON OXIDE LAYER - A direct bonding method between at least a first layer ( | 11-20-2014 |