Patent application number | Description | Published |
20130138197 | STERILIZATION METHODS AND APPARATUS - Sterilization methods for implantable prostheses are described, where a polymeric stent may be sterilized, e.g., via ETO sterilization, at a temperature below a glass transition temperature of the stent. A separate delivery catheter may be sterilized separately and the stent and delivery catheter may then be combined in an aseptic, or semi-aseptic environment and sterilized as an assembled system such that the requirements for sterilizing the system are relatively lower. Additionally and/or alternatively, valve and filter assemblies may be used with an optional mandrel assembly for maintaining sterility of the internal components of a catheter system. | 05-30-2013 |
20130197601 | DEVICE AND METHOD FOR INDEPENDENTLY STIMULATING HEMIDIAPHRAGMS - A device and method for treating a subject is provided where electrical stimulation may be separately provided to each hemidiaphragm to cause diaphragm contraction. Fatigue may be avoided among other possible benefits. Each hemidiaphragm may also be stimulated with different stimulation parameters. Stimulation may be smoothly transitioned between hemidiaphragms. Such stimulation may provide an increase in functional residual capacity or other therapeutic effects. | 08-01-2013 |
20130294979 | STERILIZATION METHODS AND APPARATUS - Sterilization methods for implantable prostheses are described where a polymeric stent may be sterilized, e.g., via ETO sterilization, at a temperature below a glass transition temperature of the stent. A separate delivery catheter may be sterilized separately and the stent and delivery catheter may then be combined in an aseptic or semi-aseptic environment and sterilized as an assembled system such that the requirements for sterilizing the system are relatively lower. Additionally and/or alternatively, valve and filter assemblies may be used with an optional mandrel assembly for maintaining sterility of the internal components of a catheter system. | 11-07-2013 |
20140330359 | METHODS AND APPARATUS FOR STENT DELIVERY AND DEPLOYMENT - For scaffolds delivered and deployed intravascularly, one or several configurations may be employed for creating a smoother transition from balloon-to-scaffold. For instance, one or more spacers may be positioned in proximity to the scaffold. Alternatively, portions of the inflatable balloon may be configured to provide a smooth transition. In another alternative, the stent edges may be shaped to provide a smooth transition. In yet other variations, any number of different combinations of such features may be employed. | 11-06-2014 |
20150034081 | THERAPEUTIC DIAPHRAGM STIMULATION DEVICE AND METHOD - A device and method for treating a variety of conditions, disorders or diseases with diaphragm/phrenic nerve stimulation is provided. | 02-05-2015 |
20150051686 | BIORESORBABLE SCAFFOLD FOR TREATMENT OF BIFURCATION LESION - Bioresorbable scaffolds for treatment of bifurcation lesion are described herein. Generally, an expandable scaffold may be fabricated from a high molecular weight isotropic PLLA material, wherein the scaffold incorporates one or more strain relief features which are configured to allow side branch treatment. | 02-19-2015 |
Patent application number | Description | Published |
20100291186 | Transdermal Administration of Tamsulosin - In an aspect of the invention, a composition for making a patch for the transdermal delivery of tamsulosin is provided. The composition comprises (a) at least about 1 wt % tamsulosin or a pharmaceutically acceptable salt of tamsulosin, (b) at least about 40 wt % polyisobutylene adhesive or hydrophobic synthetic rubber adhesive, (c) about 1-20 wt % of an aprotic solvent in which tamsulosin dissolves readily, (d) about 1-20 wt % of an unsaturated fatty acid or an alpha-hydroxy acid or a mixture of unsaturated fatty acids or alpha-hydroxy acids or of both unsaturated fatty acids and alpha-hydroxy acids, (e) a lipophilic permeation enhancer, and (f) a matrix modifier. | 11-18-2010 |
20140322284 | TRANSDERMAL ADMINISTRATION OF TAMSULOSIN - In an aspect of the invention, a composition for making a patch for the transdermal delivery of tamsulosin is provided. The composition comprises (a) at least about 1 wt % tamsulosin or a pharmaceutically acceptable salt of tamsulosin, (b) at least about 40 wt % polyisobutylene adhesive or hydrophobic synthetic rubber adhesive, (c) about 1-20 wt % of an aprotic solvent in which tamsulosin dissolves readily, (d) about 1-20 wt % of an unsaturated fatty acid or an alpha-hydroxy acid or a mixture of unsaturated fatty acids or alpha-hydroxy acids or of both unsaturated fatty acids and alpha-hydroxy acids, (e) a lipophilic permeation enhancer, and (f) a matrix modifier. | 10-30-2014 |
20150080437 | TOPICAL ADHESIVE COMPOSITION, AND DEVICE, FOR IMPROVING AESTHETIC APPEARANCE OF SKIN - Compositions, devices and methods for improving the aesthetic appearance of skin are described. In one embodiment, the compositions, devices and methods reduce fine lines and/or wrinkles, and in other embodiment, the compositions, devices and methods improve skin tone by reducing regions of hyperpigmentation. The cosmetic compositions and devices described are formulated for topical application for extended wear, and comprise one or more agents to achieve the desired beneficial effect. The composition is preferably an adhesive composition that is secured to the skin for an extended time for sustained release of the one or more beneficial agents. | 03-19-2015 |
Patent application number | Description | Published |
20100093187 | Method for Depositing Conformal Amorphous Carbon Film by Plasma-Enhanced Chemical Vapor Deposition (PECVD) - Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate. | 04-15-2010 |
20110287633 | ULTRA HIGH SELECTIVITY ASHABLE HARD MASK FILM - A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate. | 11-24-2011 |
20110291243 | PLANARIZING ETCH HARDMASK TO INCREASE PATTERN DENSITY AND ASPECT RATIO - Methods for manufacturing a semiconductor device in a processing chamber are provided. In one embodiment, a method includes depositing over a substrate a first base material having a first set of interconnect features, filling an upper portion of the first set of interconnect features with an ashable material to an extent capable of protecting the first set of interconnect features from subsequent processes while being easily removable when desired, planarizing an upper surface of the first base material such that an upper surface of the ashable material filled in the first set of interconnect features is at the same level with the upper surface of the first base material, providing a substantial planar outer surface of the first base material, depositing a first film stack comprising a second base material on the substantial planar outer surface of the first base material, forming a second set of interconnect features in the second base material, wherein the second set of interconnect features are aligned with the first set of interconnect features, and removing the ashable material from the first base material, thereby extending a feature depth of the semiconductor device by connecting the second set of interconnect features to the first set of interconnect features. In another embodiment, a method includes providing a base material having a first film stack deposited thereon, wherein the base material is formed over the substrate and having a first set of interconnect features filled with an amorphous carbon material, the first film stack comprising a first amorphous carbon layer deposited on a surface of the base material, a first anti-reflective coating layer deposited on the first amorphous carbon layer, and a first photoresist layer deposited on the first anti-reflective coating layer, and patterning a portion of the first photoresist layer by shifting laterally a projection of a mask on the first photoresist layer relative to the substrate a desired distance, thereby introducing into the first photoresist layer a first feature pattern to be transferred to the underlying base material, wherein the first feature pattern is not aligned with the first set of interconnect features. | 12-01-2011 |
20120080779 | ULTRA HIGH SELECTIVITY DOPED AMORPHOUS CARBON STRIPPABLE HARDMASK DEVELOPMENT AND INTEGRATION - Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method comprises providing a substrate in a processing volume, flowing a hydrocarbon containing gas mixture into the processing volume, generating a plasma of the hydrocarbon containing gas mixture by applying power from an RF source, flowing a boron containing gas mixture into the processing volume, and depositing a boron containing amorphous carbon film on the substrate in the presence of the plasma, wherein the boron containing amorphous carbon film contains from about 30 to about 60 atomic percentage of boron. | 04-05-2012 |
20120285481 | METHODS OF REMOVING A MATERIAL LAYER FROM A SUBSTRATE USING WATER VAPOR TREATMENT - Embodiments of the invention generally relate to methods of removing and/or cleaning a substrate surface having different material layers disposed thereon using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a substrate includes positioning a substrate into a processing chamber, the substrate having a dielectric layer disposed thereon forming openings on the substrate, exposing the dielectric layer disposed on the substrate to water vapor supplied into the chamber to form a plasma in the water vapor, maintaining a process pressure in the chamber at between about 1 Torr and about 120 Torr, and cleaning the contact structure formed on the substrate. | 11-15-2012 |
20120285492 | METHODS OF DRY STRIPPING BORON-CARBON FILMS - Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF | 11-15-2012 |
20130284090 | COMPENSATING CONCENTRATION UNCERTAINITY - Methods and apparatus for depositing uniform boron-containing films are disclosed. A first precursor is delivered to a chamber through a first pathway having a first flow controller and a composition sensor. A second precursor is delivered by a second pathway, including a second flow controller, to a mixing point fluidly coupling the first and second pathways. A controller is coupled to the vibration sensor and the first and second flow controllers. The first precursor may be a mixture of diborane and a diluent gas, and the second precursor is typically a diluent gas. The flow rate of the first precursor may be set by determining a concentration of diborane in the first precursor from the composition sensor reading, and setting the flow rate to maintain a desired flow rate of diborane. The flow rate of the second precursor may be set to maintain a desired flow to the chamber. | 10-31-2013 |
20140017897 | ULTRA HIGH SELECTIVITY DOPED AMORPHOUS CARBON STRIPPABLE HARDMASK DEVELOPMENT AND INTEGRATION - Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a boron-containing amorphous carbon film is disclosed. The boron-containing amorphous carbon film comprises from about 10 to 60 atomic percentage of boron, from about 20 to about 50 atomic percentage of carbon, and from about 10 to about 30 atomic percentage of hydrogen. | 01-16-2014 |
20140216498 | METHODS OF DRY STRIPPING BORON-CARBON FILMS - Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF | 08-07-2014 |
20140273461 | CARBON FILM HARDMASK STRESS REDUCTION BY HYDROGEN ION IMPLANTATION - Methods for forming a hydrogen implanted amorphous carbon layer with desired film mechanical strength as well as optical film properties are provided. In one embodiment, a method of a hydrogen implanted amorphous carbon layer includes providing a substrate having a material layer disposed thereon, forming an amorphous carbon layer on the material layer, and ion implanting hydrogen ions from a hydrogen containing gas into the amorphous carbon layer to form a hydrogen implanted amorphous carbon layer. | 09-18-2014 |
20150136325 | PLASMA PROCESSING USING MULTIPLE RADIO FREQUENCY POWER FEEDS FOR IMPROVED UNIFORMITY - A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points. | 05-21-2015 |
20150228463 | CLEANING PROCESS FOR CLEANING AMORPHOUS CARBON DEPOSITION RESIDUALS USING LOW RF BIAS FREQUENCY APPLICATIONS - Methods for cleaning a processing chamber to remove amorphous carbon containing residuals from the processing chamber are provided. The cleaning process utilizes a low frequency RF bias power during the cleaning process. In one embodiment, a method of cleaning a processing chamber includes supplying a cleaning gas mixture into a processing chamber, applying a RF bias power of about 2 MHz or lower to a substrate support assembly disposed in the processing chamber to form a plasma in the cleaning gas mixture in the processing chamber, and removing deposition residuals from the processing chamber. | 08-13-2015 |
20150247237 | EDGE HUMP REDUCTION FACEPLATE BY PLASMA MODULATION - Embodiments described herein relate to a faceplate for improving film uniformity. A semiconductor processing apparatus includes a pedestal, an edge ring and a faceplate having distinct regions with differing hole densities. The faceplate has an inner region and an outer region which surrounds the inner region. The inner region has a greater density of holes formed therethrough when compared to the outer region. The inner region is sized to correspond with a substrate being processed while the outer region is sized to correspond with the edge ring. | 09-03-2015 |
20150371851 | AMORPHOUS CARBON DEPOSITION PROCESS USING DUAL RF BIAS FREQUENCY APPLICATIONS - Methods for forming an amorphous carbon layer with desired film mechanical strength low film stress as well as optical film properties are provided. In one embodiment, a method of forming an amorphous carbon layer includes forming a plasma of a deposition gas mixture including a hydrocarbon gas supplied in a processing chamber by application of a RF source power, applying a low frequency RF bias power and a high frequency RF bias power to a first electrode disposed in the processing chamber, controlling a power ratio of the high frequency to the low frequency RF bias power, and forming an amorphous carbon layer on a substrate disposed in the processing chamber. | 12-24-2015 |
20160049323 | METHOD AND APPARATUS OF PROCESSING WAFERS WITH COMPRESSIVE OR TENSILE STRESS AT ELEVATED TEMPERATURES IN A PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEM - Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×10 | 02-18-2016 |
20160064209 | METHODS OF DRY STRIPPING BORON-CARBON FILMS - Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF | 03-03-2016 |
20160064264 | HIGH TEMPERATURE ELECTROSTATIC CHUCKING WITH DIELECTRIC CONSTANT ENGINEERED IN-SITU CHARGE TRAP MATERIALS - Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber. | 03-03-2016 |
20160099147 | GAS FLOW PROFILE MODULATED CONTROL OF OVERLAY IN PLASMA CVD FILMS - Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by controlling the substrate temperature with a dual zone heater. A chamber for depositing a film may include a chamber body comprising one or more processing regions. The chamber body may include a gas distribution assembly having a blocker plate for delivering gases into the one or more processing regions. The blocker plate may have a first region and a second region, and the first region and second region each may have a plurality of holes. The chamber body may have a dual zone heater. | 04-07-2016 |
Patent application number | Description | Published |
20130267163 | COMMUNICATIONS SECURITY IN MULTIPLE-ANTENNA WIRELESS NETWORKS - A system enhances communications security in a wireless local area network (WLAN). The system includes a multiple antenna array arranged to transmit and receive signals; and a transmitter/receiver coupled to the multiple antenna array and configured to transmit and receive the signals. The transmitter/receiver includes a beamformer, which in turn includes a signal processor component that generates a signal beam for transmission to an intended user, and a blinding component that computes one or more blinding beams using only channel state information of the intended user. The blinding beams have a zero inter-user interference condition with the signal beam. The transmitter/receiver transmits the signal beam and the blinding beams simultaneously | 10-10-2013 |
20130279391 | TRANSMISSION IN A NETWORK WITH ACTIVE AND SLEEPING CLIENTS - Methods, devices, and machine readable media are provided for transmission in a network with active and sleeping clients. Some examples can include transmitting a first multicast stream of data in response to an active wireless client being associated with the wireless network device at a particular time. The method can include transmitting a second multicast stream of the data after the first multicast stream in response to a sleeping wireless client being associated with the wireless network device at the particular time and in response to a delivery traffic indication message count expiring. The first and/or second multicast streams of the data can be retransmitted a number of times (e.g., at different data rates). An active/sleep status can be maintained for the wireless clients. A unicast stream can be transmitted when the number of clients does not exceed a threshold. | 10-24-2013 |
20130283050 | WIRELESS CLIENT AUTHENTICATION AND ASSIGNMENT - Methods, devices, and machine readable media are provided for wireless client authentication and assignment. Some examples can include a network device with a processing resource and a memory resource storing instructions executable by the processing resource to act as a default gateway and present a web portal for logon in response to a request from a wireless client prior to authentication of the wireless client, to send a dissociation command for the wireless client in response to an initial authentication of the wireless client, and to assign traffic to a local virtual local area network (VLAN) defined on an access point (AP) associated with the wireless client in response to a subsequent authentication of the wireless client. Some examples can include assigning the wireless client to an isolation VLAN that is tunneled via the network device prior to dissociation, where the local VLAN is not tunneled via the network device. | 10-24-2013 |
20130287070 | HYBRID PLATFORM FOR A SOFTWARE DEFINED RADIO - A hybrid platform for a software defined radio (SDR) includes a receive/transmit antenna, a radio frequency (RF) frontend, a baseband processor, and a SDR positioned along a signal path that couples the antenna, the RF frontend, and the baseband processor. The SDR includes a transmit processing chain, a receive processing chain, and a FPGA that includes control logic to reduce distortion caused by signal transmission within the SDR. | 10-31-2013 |
20140032742 | WIRELESS NETWORK DEVICE BUFFERS - A wireless network device includes operating system layer buffers used by an operating system and driver layer buffers used by a wireless network interface driver in the device. Memory stores a capacity bitmap managed by the wireless network interface driver. The capacity bitmap identifies a current capacity of each of the driver layer buffers and the capacity bitmap may be provided to the operating system. | 01-30-2014 |
20140036696 | Utilizing Client Mobile Devices for Wireless Network Monitoring - Example embodiments disclosed herein relate to utilizing client mobile devices for wireless network monitoring. Link quality data for wireless networks are measured by a plurality of wireless client devices and are provided to a network controller. The link quality data is usable to manage a wireless local area network (WLAN). The wireless networks include at least the WLAN and a cellular network. A recommendation for connection is provided to the wireless client devices, where the recommendation indicates if the cellular network is recommended or an access point of the WLAN. | 02-06-2014 |
20140211883 | TRANSMITTING A WIRELESS SIGNAL BASED ON DETECTED SIGNAL INTERFERENCE - A computing device can determine a radio frequency (RF) bandwidth in which one or more frames are to be transmitted by the computing device. The RF bandwidth is within the operating transmission bandwidth of the computing device. A signal interference having an interference bandwidth can interfere with the transmission of the one or more frames. In response to detecting the signal interference, one or more frames can be transmitted within the operating transmission bandwidth and not within the interference bandwidth. | 07-31-2014 |
20140286321 | METHOD OF ASSOCIATING A CLIENT WITH AN ACCESS POINT IN A WIRELESS LOCAL AREA NETWORK - A method of associating a client with an access point in a wireless local area network. The access point broadcasts a beacon announcing the existence of the access point. The beacon comprises a field which has a list of client identifiers of acceptable clients from which the access point will accept an association request. | 09-25-2014 |
20140294108 | Extrapolating Channel State Information ("CSI") Estimates From Multiple Packets Sent Over Different Antennas to Generate a Combined CSI Estimate for a MIMO-OFDM System - A method for extrapolating channel state information (“CSI”) estimates from multiple packets sent over different antennas to generate a combined CSI estimate for a MIMO-OFDM system is disclosed. Packets are received on m×n | 10-02-2014 |
20150016375 | Control of Frequency Channel Between Wireless Access Points According to Sequence - Embodiments herein relate to transferring control of a frequency channel between wireless access points (WAP) according to a sequence where the frequency channel is part of an industrial, scientific and medical (ISM) radio band. Each of the WAPs transfers control of the same frequency channel according to a sequence. The transfer of control in the sequence occurs between adjacent WAPs, and the first and last WAPs in the sequence are adjacent to each other. | 01-15-2015 |
20150078470 | Extrapolating Channel State Information ("CSI") Estimates From Multiple Packets Sent Over Different Frequency Channels to Generate a Combined CSI Estimate for a MIMO-OFDM System - A method for extrapolating channel state information (“CSI”) estimates from multiple packets sent over different channels to generate a combined CSI estimate for a MIMO-OFDM system is disclosed. Packets are received on an m×n×W | 03-19-2015 |
20150131555 | Wireless Access Point Cell ID Insertion in Frame Header - A wireless access point includes a wireless interface to send or receive frames in a cell in a wireless network. A storage device stores a cell ID that uniquely identifies the wireless access point. Processing circuitry inserts the cell ID in a physical layer header of a frame, and sends the frame to a client device in the cell via the wireless interface. | 05-14-2015 |
20150139002 | Management of Modulation and Coding Scheme Implementation - In an example, packets transmitted over a communication channel from a transmitter are received. Channel state information (CSI) from the received packets are obtained and signal-to-noise (SNR) values of the communication channel are computed based on the obtained CSI. In addition, effective bit error rate (BER) values are determined based on the SNR values, a coherence time period within which the effective BER values of the communication channel remain within a predetermined range is determined, a modulation and coding scheme (MCS) to be implemented by the transmitter is determined based on the effective BER values within the coherence time period, and the determined MCS is transmitted to the transmitter. | 05-21-2015 |