Toshihiko Shima
Toshihiko Shima, Ibaraki JP
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20110012154 | LED ELEMENT AND METHOD FOR MANUFACTURING LED ELEMENT - Provided is a GaN-based LED element having a novel structure for improving output by increasing light extraction efficiency. A GaN-based LED element comprising: a semiconductor laminated structure in which an n-type GaN-based semiconductor layer is arranged on the side of a lower surface of a p-type GaN-based semiconductor layer having an upper surface and the lower surface, and a light emitting part comprising a GaN-based semiconductor is interposed between the layers; a p-side electrode formed on the upper surface of the p-type GaN-based semiconductor layer; and an n-side electrode electrically connected to the n-type GaN-based semiconductor layer, wherein the p-side electrode comprises a transparent conductive film comprising a window region serving as a window for extracting light generated in the light emitting part, and a flat section and a rough surface section formed by a roughening treatment are arranged to form a predetermined mixed pattern on the upper surface of the p-type GaN-based semiconductor layer covered with the window region of the transparent conductive film. | 01-20-2011 |
20110260196 | LED ELEMENT AND METHOD FOR MANUFACTURING LED ELEMENT - Provided is a GaN-based LED element having a novel structure for improving output by increasing light extraction efficiency. A GaN-based LED element comprising: a semiconductor laminated structure in which an n-type GaN-based semiconductor layer is arranged on the side of a lower surface of a p-type GaN-based semiconductor layer having an upper surface and the lower surface, and a light emitting part comprising a GaN-based semiconductor is interposed between the layers; a p-side electrode formed on the upper surface of the p-type GaN-based semiconductor layer; and an n-side electrode electrically connected to the n-type GaN-based semiconductor layer, wherein the p-side electrode comprises a transparent conductive film comprising a window region serving as a window for extracting light generated in the light emitting part, and a flat section and a rough surface section formed by a roughening treatment are arranged to form a predetermined mixed pattern on the upper surface of the p-type GaN-based semiconductor layer covered with the window region of the transparent conductive film. | 10-27-2011 |
Toshihiko Shima, Ushiku-Shi JP
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20100314642 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE DEVICE - A nitride semiconductor light-emitting diode element | 12-16-2010 |
Toshihiko Shima, Hyogo JP
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20100019247 | Light emitting device using gan led chip - A light emitting device is constituted by flip-chip mounting a GaN-based LED chip | 01-28-2010 |
Toshihiko Shima, Okazaki-Shi JP
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20090108225 | VALVE DEVICE AND MANUALLY OPERATED SHUTOFF VALVE DEVICE - In a valve device for selectively opening and closing a flow passage formed to open on a valve seat by a valve body through a resin-made seat, a hollow portion is formed on either one of the valve body and the valve seat and receives the resin-made seat therein, the resin-made seat has a thickness so that the resin-made seat partly protrudes from the hollow portion, and when the valve body is operated to close the flow passage, the resin-made seat is compressed to bring an end surface of the valve body into contact with the valve seat. | 04-30-2009 |
20090283154 | FLUID SUPPLY VALVE ATTACHMENT DEVICE - A fluid supply valve attachment device that has a tank, a fixing member in which a recessed fitting section is formed, a fluid supply valve that is inserted in and fixed to the recessed fitting section, a first seal member which seals a space between the tank and the fixing member, and a second seal member which seals a space between the fixing member and the fluid supply valve. The maximum inside diameter of the recessed fitting section is defined as D, a distance between a cross-sectional center of the first seal member and a cross-sectional center of the second seal member in a direction that a central axial line of the recessed fitting section extends in an attached state is defined as L | 11-19-2009 |
20090308465 | VALVE DEVICE - A valve device includes: a valve member that controls flow of a fluid, and a body that has a valve insertion hole in which the valve member is inserted, and whose inner surface is cylindrically formed, and into which the fluid flows, and a lead-in passage that has an opening in the inner surface of the valve insertion hole, and that causes the fluid to flow into the valve insertion hole. A line representing the direction of extension of the lead-in passage is tilted from a line normal to the inner surface of the valve insertion hole at a position of the opening of the lead-in passage, in a view in the axis direction of the valve insertion hole. | 12-17-2009 |
20150034195 | VALVE UNIT - The valve unit includes: a body having a charging passage; a supply-side joint that connects a supply pipe; and a check valve that is disposed in the gas passage, and that inhibits gas from being discharged from the gas tank to the outside of the body. The check valve includes a check valve seat, a check valve element that comes into contact with or moves away from the check valve seat, and a positioning member that fixes the position of the check valve seat in the charging passage. The body has a fitting hole which is communicated with the charging passage and in which the supply-side joint and the positioning member are fitted. The positioning member is fitted in a second fitting hole so as to fix the position of the check valve seat even when the supply-side joint has not been fitted in a first fitting hole. | 02-05-2015 |
Toshihiko Shima, Aichi-Ken JP
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20080202603 | Pressure Reducer - A pressure reducer includes a piston slidably accommodated in a cylinder to define a decompression chamber and a pressure adjusting chamber. A seal member includes an elastic member and a sliding portion. The sliding portion is pressed by the elastic member such that the sliding portion slides on an inner circumferential surface of the cylinder. An annular member is located on an outer circumferential surface of the piston and between the seal member and the pressure adjusting surface. The annular member is pressed against the inner circumferential surface of the cylinder with a force that is less than a force with which the sliding portion is pressed against the inner circumferential surface of the cylinder. Thus, the pressure reducer prevents the piston from being moved by an excessive amount with highly accurately adjusting pressure. | 08-28-2008 |
20090146094 | ASSEMBLED STRUCTURE OF VALVE DEVICE, PLUG BODY, AND MANUAL VALVE - A plug body housing | 06-11-2009 |
Toshihiko Shima, Amagasaki-Shi JP
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20120175669 | LIGHT EMITTING DEVICE USING GaN LED CHIP - A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer. | 07-12-2012 |
20140061664 | LIGHT EMITTING DEVICE USING GAN LED CHIP - A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer. | 03-06-2014 |